Kexin BAT64-04-HF Schottky diode Datasheet

Diodes
SMD Type
Schottky Diodes
BAT64-04/05/06-HF (KAT64-04/05/06-HF)
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
+0.1
1.3 -0.1
+0.1
2.4 -0.1
● For low-loss, fast-recovery, meter protection,
0.4
3
■ Features
1
● Integrated diffused guard ring
0.55
bias isolation and clamping applications
2
+0.1
0.95 -0.1
+0.1
1.9 -0.1
● Low forward voltage
+0.05
0.1 -0.01
+0.1
0.97 -0.1
● Pb−Free Package May be Available. The G−Suffix Denotes a
0-0.1
BAT64-HF
BAT64-04-HF
BAT64-05-HF
+0.1
0.38 -0.1
Pb−Free Lead Finish
BAT64-06-HF
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
VRM
40
DC Reverse Voltage
VR
40
Forward Current
IF
250
IFSM
800
Peak Reverse Voltage
Non-repetitive Peak forward surge current @t=8.3ms
mA
PD
250
mW
400
℃/W
TJ
125
Tstg
-55 to 150
Junction Temperature
Storage Temperature range
V
RθJA
Power Dissipation
Thermal Resistance Junction to Ambient
Unit
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Reverse breakdown voltage
Forward voltage
Symbol
VR
VF
Test Conditions
Min
IR= 100 uA
Typ
Max
40
V
IF= 1 mA
350
IF= 10 mA
430
IF= 30 mA
520
IF= 100 mA
750
Reverse voltage leakage current
IR
VR=25 V
Capacitance between terminals
CT
VR= 1 V, f= 1 MHz
Unit
2
6
mV
uA
pF
■ Marking
Type
BAT64-HF
BAT64-04-HF
BAT64-05-HF
BAT64-06-HF
Marking
63S F
64S F
65S F
66S F
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Diodes
SMD Type
Schottky Diodes
BAT64-04/05/06-HF (KAT64-04/05/06-HF)
■ Typical Characterisitics
Forward
Characteristics
(uA)
(mA)
IF
REVERSE CURRENT IR
100
FORWARD CURRENT
Reverse
1000
800
T a =100 ℃
T a =25 ℃
10
Characteristics
T a =100 ℃
100
10
T a =25 ℃
1
1
0.0
0.1
0.2
0.4
0.6
FORWARD VOLTAGE
0.8
VF
1.0
1.2
0
20
30
REVERSE VOLTAGE
(V)
Capacitance Characteristics
20
10
VR
40
(V)
Power Derating Curve
300
T a =25 ℃
(mW)
PD
15
POWER DISSIPATION
CAPACITANCE BETWEEN TERMINALS
CT (pF)
f=1MHz
10
200
150
100
5
50
0
0
0
8
16
24
REVERSE VOLTAGE
2
250
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VR
(V)
40
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
(℃)
125
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