ON NB3N51032 Dual hcsl/lvds clock generator Datasheet

NB3N51032
3.3 V, Crystal to 25 MHz,
100 MHz, 125 MHz and
200 MHz Dual HCSL/LVDS
Clock Generator
The NB3N51032 is a precision, low phase noise clock generator that
supports PCI Express and Ethernet requirements. The device accepts a
25 MHz fundamental mode parallel resonant crystal and generates a
differential HCSL output at 25 MHz, 100 MHz, 125 MHz or 200 MHz
clock frequencies. Outputs can interface with LVDS with proper
termination (See Figure 10). The NB3N51032 provides selectable
spread options of −0.5% and −0.75% for applications demanding low
Electromagnetic Interference (EMI) as well as optimum performance
with no spread option.
Features
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MARKING
DIAGRAM
16
16
NB3N
1032
1
ALYWG
TSSOP−16
G
1
DT SUFFIX
CASE 948F
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Uses 25 MHz Fundamental Mode Parallel Resonant Crystal
External Loop Filter is Not Required
HCSL Differential Output or LVDS with Proper Termination
Four Selectable Multipliers of the Input Frequency
Output Enable with Tri−State Outputs
ORDERING INFORMATION
PCIe Gen 1, Gen 2, Gen 3 Compliant
See detailed ordering and shipping information on page 11 of
this data sheet.
Spread of −0.5%, −0.75% and No Spread
Applications
Phase Noise: @ 100 MHz
• Networking
Offset Noise Power
100 Hz −88 dBc/Hz
• Consumer
1 kHz −118 dBc/Hz
• Computing and Peripherals
10 kHz −131 dBc/Hz
• Industrial Equipment
100 kHz −132 dBc/Hz
• PCIe Clock Generation Gen 1, Gen 2 and Gen 3
1 MHz −144 dBc/Hz
• Gigabit Ethernet
10 MHz −155 dBc/Hz
• FB DIMM
Typical Period Jitter RMS of 1.5 ps
Operating Supply Voltage Range 3.3 V ±5%
End Products
Industrial Temperature Range −40°C to +85°C
• Switch and Router
Functionally Compatible with IDT557−03,
• Set Top Box, LCD TV
IDT5V41065, IDT5V41235 with enhanced performance
• Servers, Desktop Computers
These are Pb−Free Devices
• Automated Test Equipment
VDD
Spread Spectrum
Circuit
X1/CLK
25 MHz Clock or
Crystal
SS0 SS1
Clock Buffer
Crystal Oscillator
Charge
Pump
Phase
Detector
VCO
X2
BN
VDD = VDDODA = VDDXD
GND = GNDODA = GNDXD
GND
S1
OE
CLK0
CLK0
HCSL
Output
CLK1
CLK1
IREF
Figure 1. NB3N51032 Simplified Logic Diagram
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 1
S0
HCSL
Output
1
Publication Order Number:
NB3N51032/D
NB3N51032
S0
1
16
VDDXD
S1
2
15
CLK0
SS0
3
14
CLK0
X1/CLK
4
13
GNDODA
X2
5
12
VDDODA
OE
6
11
CLK1
GNDXD
7
10
CLK1
SS1
8
9
IREF
Figure 2. Pin Configuration (Top View)
Table 1. PIN DESCRIPTION
Pin
Symbol
I/O
Description
1
S0
Input
LVTTL/LVCMOS frequency select input 0. Internal pullup resistor to VDDXD. See output
select table 2 for details.
2
S1
Input
LVTTL/LVCMOS frequency select input 1. Internal pullup resistor to VDDXD. See output
select Table 2 for details.
3
SS0
Input
LVTTL/LVCMOS Spread select input 0. Internal pullup resistor to VDDXD. See Spread selection Table 3 for details.
4
X1/CLK
Input
Crystal or Clock input. Connect to 25 MHz crystal source or single−ended clock.
5
X2
Input
Crystal input. Connect to a 25 MHz crystal or leave unconnected for clock input.
Output enable tri−states output when connected to GND. Internal pullup resistor to VDDXD.
6
OE
Input
7
GNDXD
Power Supply
8
SS1
Input
LVTTL/LVCMOS Spread select input 1. Internal pullup resistor to VDDXD. See Spread selection Table 3 for details.
9
IREF
Output
Output current reference pin. Precision resistor (typ. 475 W) is connected to set the output
current.
10
CLK1
HCSL or
LVDS Output
Inverted clock output. (For LVDS levels see Figure 10)
11
CLK1
HCSL or
LVDS Output
Noninverted clock output. (For LVDS levels see Figure 10)
12
VDDODA
Power Supply
Positive supply voltage pin connected to +3.3 V supply voltage.
13
GNDODA
Power Supply
Ground 0 V. These pins provide GND return path for the devices.
14
CLK0
HCSL or
LVDS Output
Inverted clock output. (For LVDS levels see Figure 10)
15
CLK0
HCSL or
LVDS Output
Noninverted clock output. (For LVDS levels see Figure 10)
16
VDDXD
Power Supply
Positive supply voltage pin connected to +3.3 V supply voltage.
Ground 0 V. This pin provides GND return path for the device.
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NB3N51032
Recommended Crystal Parameters
Table 2. OUTPUT FREQUENCY SELECT TABLE
WITH 25MHz CRYSTAL
S1*
S0*
CLK Multiplier
fCLKout (MHz)
L
L
1x
25
L
H
4x
100
H
L
5x
125
H
H
8x
200
Crystal
Frequency
Load Capacitance
Shunt Capacitance, C0
Equivalent Series Resistance
Initial Accuracy at 25 °C
Temperature Stability
Aging
Fundamental AT−Cut
25 MHz
16−20 pF
7 pF Max
50 W Max
±20 ppm
±30 ppm
±20 ppm
*Pins S1 and S0 default high when left open.
Table 3. SPREAD SELECTION TABLE
SS1*
SS0*
Spread%
Spread Type
0
0
No Spread
N/A
0
1
−0.5
Down
1
0
−0.75
Down
1
1
No Spread
N/A
*Pins S1 and S0 default high when left open.
Table 4. ATTRIBUTES
Characteristic
ESD Protection
Value
Human Body Model
2 kV
Pull−up Resistor (Pins OE, S0, S1, SS0 and SS1)
50 kW
Moisture Sensitivity, Indefinite Time Out of Dry Pack (Note 1)
Level 1
Flammability Rating
Oxygen Index: 28 to 34
Transistor Count
UL 94 V−0 @ 0.125 in
132000
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
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NB3N51032
Table 5. MAXIMUM RATINGS (Note 2)
Symbol
Parameter
Rating
Unit
4.6
V
−0.5 V to VDD+0.5 V
V
Operating Temperature Range
−40 to +85
°C
Storage Temperature Range
−65 to +150
°C
74
64
°C/W
°C/W
Thermal Resistance (Junction−to−Case)
50
°C/W
Wave Solder
265
°C
VDD
Positive Power Supply with respect to GND (VDDXD and VDDODA)
VI
Input Voltage with respect to GND (VIN)
TA
Tstg
qJA
Thermal Resistance (Junction−to−Ambient) (Note 3)
qJC
Tsol
0 lfpm
500 lfpm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and not valid simultaneously. If
stress limits are exceeded device functional operation is not implied, damage may occur and reliability may be affected.
3. JEDEC standard multilayer board − 2S2P (2 signal, 2 power).
Table 6. DC CHARACTERISTICS (VDD = 3.3 V ±5%, GND = 0 V, TA = −40°C to +85°C, Note 4)
Symbol
Characteristic
Min
Typ
Max
Unit
3.135
3.3
3.465
V
VDD
Power Supply Voltage (VDDXD and VDDODA)
GND
Power Supply Ground (GNDXD and GNDODA)
IDD
IDDOE
VIH
Input HIGH Voltage (X1/CLK, S0, S1, SS0, SS1 and OE)
2000
VDD + 300
mV
VIL
Input LOW Voltage (X1/CLK, S0, S1, SS0, SS1 and OE)
GND − 300
800
mV
VOH
Output HIGH Voltage for HCSL Output (Note 5)
660
850
mV
VOL
Output LOW Voltage for HCSL Output (Note 5)
−150
Vcross
Crossing Voltage Magnitude (Absolute) for HCSL Output (Notes 6 and 7)
250
DVcross
Change in Magnitude of Vcross for HCSL Output (Notes 6 and 8)
0
V
Power Supply Current, 200 MHz Output, −0.75% spread
100
mA
Power Supply Current when OE is Set Low
55
mA
0
mV
550
mV
150
mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
4. VDDXD and VDDODA power pins must be shorted to power supply voltage VDD and GNDXD and GNDODA ground pins must be shorted
to power supply ground GND. Measurement taken with outputs terminated with RS = 33.2 W, RL = 49.9 W, with test load capacitance of 2
pF and current biasing resistor set at 475 W. See Figure 9. Guaranteed by characterization.
5. Measurement taken from single−ended waveform.
6. Measured at crossing point where the instantaneous voltage value of the rising edge of CLKx+ equals the falling edge of CLKx−.
7. Refers to the total variation from the lowest crossing point to the highest, regardless of which edge is crossing. Refers to all crossing points
for this measurement.
8. Defined as the total variation of all crossing voltage of rising CLKx+ and falling CLKx−. This is maximum allowed variance in the VCROSS
for any particular system.
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NB3N51032
Table 7. AC CHARACTERISTICS (VDD = 3.3 V ±5%, GND = 0 V, TA = −40°C to +85°C; Note 9)
Symbol
Characteristic
Min
fCLKIN
Clock/Crystal Input Frequency
fCLKOUT
Output Clock Frequency
FNOISE
Phase−Noise Performance
tJITTER
Period Jitter Peak−to−Peak (Note 10)
Period Jitter RMS (Note 10)
Cycle−Cycle RMS Jitter (Note 11)
Cycle−to−Cycle Peak to Peak Jitter (Note 11)
tJIT(F)
Phase RMS Jitter, Integration Range 12 kHz to 20 MHz
fMOD
Spread Spectrum Modulation Frequency
Typ
Max
25
25
fCLKOUT = 100 Mhz
@ 100 Hz offset from carrier
@ 1 kHz offset from carrier
@ 10 kHz offset from carrier
@ 100 kHz offset from carrier
@ 1 MHz offset from carrier
@ 10 MHz offset from carrier
200
MHz
dBc/Hz
−88
−118
−131
−132
−144
−155
fCLKOUT = 200 Mhz
fCLKOUT = 200 MHz
fCLKOUT = 200 MHz
fCLKOUT = 200 MHz
10
1.5
2.0
20
20
3.0
5.0
35
0.5
30
3rd
Unit
MHz
Harmonic
31.5
ps
ps
33.33
−10
kHz
SSCRED
Spectral Reduction, fCLKOUT of 100 MHz with −0.5% spread,
(Note 12)
dB
tSKEW
Within Device Output to Output Skew
Eppm
Frequency Synthesis Error, All Outputs
tSPREAD
Spread Spectruction Transition Time
(Stablization Time After Spread Spectrum Changes)
tOE
Output Enable/Disable Time (Note 13)
tDUTY_CYCLE
Output Clock Duty Cycle (Measured at cross point)
45
55
%
tR
Output Risetime (Measured from 175 mV to 525 mV, Figure 11)
175
700
ps
tF
Output Falltime (Measured from 525 mV to 175 mV, Figure 11)
175
700
ps
DtR
Output Risetime Variation (Single−Ended)
125
ps
DtF
Output Falltime Variation (Single−Ended)
125
ps
Stabilization
Time
Stabilization Time From Powerup VDD = 3.3 V
40
0
7
50
3.0
ps
ppm
30
ms
10
ms
ms
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
9. VDDXD and VDDODA power pins must be shorted to power supply voltage VDD and GNDXD and GNDODA ground pins must be shorted
to power supply ground GND. Measurement taken from differential output on single−ended channel terminated with RS = 33.2 W, RL = 49.9
W, with test load capacitance of 2 pF and current biasing resistor set at 475 W. See Figure 9. Guaranteed by characterization.
10. Sampled with 10000 cycles.
11. Sampled with 1000 cycles.
12. Spread spectrum clocking enabled.
13. Output pins are tri−stated when OE is asserted LOW. Output pins are driven differentially when OE is HIGH.
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NB3N51032
Table 8. AC ELECTRICAL CHARACTERISTICS − PCI EXPRESS JITTER SPECIFICATIONS,
VDD = 3.3 V ± 5%, TA = −40°C to 85°C
Symbol
tj (PCIe Gen 1)
Parameter
Typ
Max
PCIe
Industry
Spec
SSOFF
10
20
86
pS
SSON
(−0.5%)
19
28
SSOFF
1.0
1.8
3.1
pS
SSON
(−0.5%)
1.1
1.9
SSOFF
0.1
0.15
3
pS
SSON
(−0.5%)
0.8
1.1
SSOFF
0.35
0.7
1
pS
SSON
(−0.5%)
0.55
0.8
Test Conditions
Phase Jitter
Peak−to−Peak
(Notes 15
and 18)
f = 100 MHz, 25 MHz Crystal
Input Evaluation Band:
0 Hz − Nyquist (clock
frequency/2)
tREFCLK_HF_RMS
(PCIe Gen 2)
Phase Jitter
RMS (Notes 16
and 18)
f = 100 MHz, 25 MHz Crystal
Input High Band:
1.5 MHz − Nyquist (clock
frequency/2)
tREFCLK_LF_RMS
(PCIe Gen 2)
Phase Jitter
RMS (Notes 16
and 18)
f = 100 MHz, 25 MHz Crystal
Input Low Band:
10 kHz − 1.5 MHz
tREFCLK_RMS
(PCIe Gen 3)
Phase Jitter
RMS (Notes 17
and 18)
f = 100 MHz, 25 MHz Crystal
Input Evaluation Band: 0 Hz −
Nyquist (clock frequency/2)
Min
Unit
14. Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is
mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal
equilibrium has been reached under these conditions.
15. Peak−to−Peak jitter after applying system transfer function for the Common Clock Architecture. Maximum limit for PCI Express Gen 1 is 86 ps
peak−to−peak for a sample size of 106 clock periods.
16. RMS jitter after applying the two evaluation bands to the two transfer functions defined in the Common Clock Architecture and reporting the
worst case results for each evaluation band. Maximum limit for PCI Express Generation 2 is 3.1 ps RMS for tREFCLK_HF_RMS (High Band)
and 3.0 ps RMS for tREFCLK_LF_RMS (Low Band).
17. RMS jitter after applying system transfer function for the common clock architecture.
18. VDDXD and VDDODA power pins must be shorted to power supply voltage VDD and GNDXD and GNDODA ground pins must be shorted
to power supply ground GND. Measurement taken from differential output on single−ended channel terminated with RS = 33.2 W, RL = 50 W,
with test load capacitance of 2 pF and current biasing resistor set at 475 W. See Figure 11. This parameter is guaranteed by characterization.
Not tested in production.
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NB3N51032
NOISE POWEER (dBc/Hz)
PHASE NOISE
OFFSET FREQUENCY (Hz)
NOISE POWEER (dBc/Hz)
Figure 3. Typical Phase Noise Plot at 25 MHz; (fCLKIN = 25 MHz Crystal , fCLKOUT = 25 MHz SS OFF,
RMS Phase Jitter for Integration Range 12 kHz to 20 MHz = 554 fs, Output Termination = HCSL type)
OFFSET FREQUENCY (Hz)
Figure 4. Typical Phase Noise Plot at 100 MHz; (fCLKIN = 25 MHz Crystal , fCLKOUT = 100 MHz SS OFF,
RMS Phase Jitter for Integration Range 12 kHz to 20 MHz = 456 fs, Output Termination = HCSL type)
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NB3N51032
NOISE POWEER (dBc/Hz)
PHASE NOISE
OFFSET FREQUENCY (Hz)
NOISE POWEER (dBc/Hz)
Figure 5. Typical Phase Noise Plot at 125 MHz; (fCLKIN = 25 MHz Crystal , fCLKOUT = 125 MHz SS OFF,
RMS Phase Jitter for Integration Range 12 kHz to 20 MHz = 480 fs, Output Termination = HCSL type)
OFFSET FREQUENCY (Hz)
Figure 6. Typical Phase Noise Plot at 200 MHz; (fCLKIN = 25 MHz Crystal , fCLKOUT = 200 MHz SS OFF,
RMS Phase Jitter for Integration Range 12 kHz to 20 MHz = 497 fs, Output Termination = HCSL type)
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NB3N51032
APPLICATION INFORMATION
Crystal Input Interface
as nominal values, assuming approximately 2 pF of stray
capacitance per trace and approximately 8 pF of internal
capacitance.
CL = (C1 + Cstray + Cin) / 2; C1 = C2
The frequency accuracy and duty cycle skew can be
fine-tuned by adjusting the C1 and C2 values. For example,
increasing the C1 and C2 values will reduce the operational
frequency.
Figure 7 shows the NB3N51032 device crystal oscillator
interface using a typical parallel resonant crystal. The device
crystal connections should include pads for small capacitors
from X1 to ground and from X2 to ground. These capacitors,
C1 and C2, need to consider the stray capacitances of the
board and are used to match the nominally required crystal
load capacitance CL. A parallel crystal with loading
capacitance CL = 18 pF would use C1 = 26 pF and C2 = 26 pF
C1 = 26 pF
X1
Fundamental Mode
Parallel Resonant Crystal
18 pF Load
X2
C2 = 26 pF
Figure 7. Crystal Interface Loading
Power Supply Filter
as close as possible to the device to minimize lead
inductance.
In order to isolate the NB3N51032 from system power
supply, noise decoupling is required. The 10 mF and a 0.1 mF
cap from supply pins to GND decoupling capacitor has to be
connected between VDD (pins 12 and 16) and GND (pins 7
and 13). It is recommended to place decoupling capacitors
Termination
The output buffer structure is shown in the Figure 8.
2.6 mA
14 mA
IREF
RREF
CLKx
CLKx
HCSL / LVDS
termination
475 W
Figure 8. Simplified Output Structure
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NB3N51032
interface may not require the 100 W near the LVDS receiver
if the receiver has internal 100 W termination. An optional
series resistor RL may be connected to reduce the overshoots
in case of impedance mismatch.
The outputs can be terminated to drive HCSL receiver
(see Figure 9) or LVDS receiver (see Figure 10). HCSL
output interface requires 49.9 W termination resistors to
GND for generating the output levels. LVDS output
HCSL INTERFACE
RL* = 33.2 W
CLK0
Zo = 50 W
RL* = 33.2 W
Zo = 50 W
CLK0
RL = 49.9 W
NB3N51032
HCSL
Driver
RL = 49.9 W
HCSL
Receiver
RL* = 33.2 W
CLK1
Zo = 50 W
RL* = 33.2 W
Zo = 50 W
CLK1
IREF
RL = 49.9 W
*Optional
RL = 49.9 W
RREF = 475 W
Figure 9. Typical Termination for Output Driver and Device Evaluation
LVDS COMPATIBLE INTERFACE
CLK0
RL* = 33.2 W
Zo = 50 W
100 W
RL* = 33.2 W
100 W**
Zo = 50 W
CLK0
RL = 150 W
RL = 150 W
NB3N51032
CLK1
RL* = 33.2 W
Zo = 50 W
100 W
RL* = 33.2 W
CLK1
IREF
RREF = 475 W
LVDS
Receiver
100 W**
Zo = 50 W
*Optional
**Not required if LVDS receiver
has 100 Ohm internal termination
RL = 150 W
RL = 150 W
LVDS Device Load
Figure 10. Typical Termination for LVDS Device Load
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NB3N51032
700 mV
525 mV
525 mV
175 mV
175 mV
0 mV
tR
tF
Figure 11. HCSL Output Parameter Characteristics
ORDERING INFORMATION
Package
Shipping†
NB3N51032DTG
TSSOP−16
(Pb−Free)
96 Units / Rail
NB3N51032DTR2G
TSSOP−16
(Pb−Free)
2500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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NB3N51032
PACKAGE DIMENSIONS
TSSOP−16
CASE 948F
ISSUE B
16X K REF
0.10 (0.004)
0.15 (0.006) T U
M
T U
S
V
S
S
K
ÉÉÉ
ÇÇÇ
ÇÇÇ
ÉÉÉ
K1
2X
L/2
16
9
J1
B
−U−
L
SECTION N−N
J
PIN 1
IDENT.
N
0.25 (0.010)
8
1
M
0.15 (0.006) T U
S
A
−V−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH. PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL
IN EXCESS OF THE K DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
N
F
DETAIL E
−W−
C
0.10 (0.004)
−T− SEATING
PLANE
H
D
DETAIL E
G
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MILLIMETERS
MIN
MAX
4.90
5.10
4.30
4.50
−−−
1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.18
0.28
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_
SOLDERING FOOTPRINT*
7.06
1
0.65
PITCH
16X
0.36
16X
1.26
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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INCHES
MIN
MAX
0.193 0.200
0.169 0.177
−−− 0.047
0.002 0.006
0.020 0.030
0.026 BSC
0.007
0.011
0.004 0.008
0.004 0.006
0.007 0.012
0.007 0.010
0.252 BSC
0_
8_
NB3N51032
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Phone: 81−3−5817−1050
http://onsemi.com
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ON Semiconductor Website: www.onsemi.com
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