FJD3305H1 NPN Silicon Transistor High Voltage Switch Mode Application • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application DPAK 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * Symbol TC=25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 4 A ICP Collector Current (Pulse) 8 A IB Base Current PC Collector Dissipation, Ta = 25°C Tc = 25°C TJ TSTG 2 A 1.1 50 W W Junction Temperature 150 °C Storage Temperature -65 ~ 150 °C Value Units * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics T =25°C unless otherwise noted a Symbol Parameter RθJA Thermal Resistance, Junction to Ambient 110 °C/W RθJC Thermal Resistance, Junction to Case 2.0 °C/W * Device mounted on minimum pad size Ordering Information Part Number Marking Package Packing Method FJD3305H1TM J3305H1 D-PAK Tape & Reel © 2009 Fairchild Semiconductor Corporation FJD3305H1 Rev.A Remarks www.fairchildsemi.com 1 FJD3305H1 — NPN Silicon Transistor April 2009 Symbol Parameter Conditions Min. Typ. Max Units BVCBO Collector-Base Breakdwon Voltage IC = 500µA, IE = 0 700 V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V BVEBO Emitter-Base Breakdown Voltage IE = 500µA, IC = 0 9 V ICBO Collector Cut-off Current VCB = 700V, IE = 0 1 µA IEBO Emitter Cut-off Current VEB = 9V, IC = 0 1 µA hFE1 hFE2 DC Current Gain * VCE = 5V, IC = 1A VCE = 5V, IC = 2A VCE(sat) Collector-Emitter Saturation Voltage IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A IC = 4A, IB = 1A 0.5 0.6 1.0 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A 1.2 1.6 V V fT Current Gain Bandwidth Product VCE = 10V, IC = 0.5A Cob Output Capacitance VCB = 10V, f = 1MHz tON Turn On Time tSTG Storage Time tF Fall Time VCC = 125V, IC = 2A IB1 = -IB2 = 0.4A RL = 62.5Ω 19 8 28 40 4 MHz 65 pF 0.8 µs 4.0 µs 0.9 µs * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% © 2009 Fairchild Semiconductor Corporation FJD3305H1 Rev. A www.fairchildsemi.com 2 FJD3305H1 — NPN Silicon Transistor Electrical Characteristics * TC=25°C unless otherwise noted Figure 1. Static Characteristic Figure 2. DC Current Gain 100 4.5 3.5 IB = 250mA 3.0 IB = 200mA 2.5 IB = 150mA 2.0 IB = 100mA 1.5 IB = 50mA 1.0 O O Ta = - 25 C 10 Ta = 25 C 0.5 1 0.01 0.0 0 1 2 3 4 5 6 7 8 9 10 0.1 1 10 IC [A], COLLECTOR CUTRRENT VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 3. Collector- Emitter Saturation Voltage Figure 4. Base - EmitterSaturation Voltage 10 10 IC = 4 IB VBE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE VCE = 5V O Ta = 125 C O Ta = 75 C IB = 300mA hFE, DC CURRENT GAIN IC [A], COLLECTOR CURRENT 4.0 O Ta = 125 C 1 O Ta = 75 C O Ta = - 25 C 0.1 O Ta = 25 C 0.01 0.01 0.1 1 IC = 4 IB O Ta = - 25 C O Ta = 25 C 1 O O 0.1 0.01 10 Ta = 75 C Ta = 125 C IC [A], COLLECTOR CURRENT 0.1 1 10 IC [A], COLLECTOR CURRENT Figure 5. Switching Time Figure 6. Capacitance 1 0 0 00 F = 1M H z C ib O CAPACITANCE[pF] tF & tSTG [µs], SWITCHING TIME tSTG Ta = 25 C 1000 tF O Ta = 125 C 1 0 00 1 00 C ob 10 100 IB1 = - IB2 = 0.4A VCC = 125V 1 1 1 © 2009 Fairchild Semiconductor Corporation FJD3305H1 Rev. A 10 100 R E VER SE VO LT AG E[V] IC [A], COLLECTOR CURRENT www.fairchildsemi.com 3 FJD3305H1 — NPN Silicon Transistor Typical Performance Characteristics Figure 8. RBSOA Collector- Emitter Saturation Voltage 10 10 VCE(sat) [V], SATURATION VOLTAGE VBE(OFF)=-9V IC [A], COLLECTOR CURRENT VBE(OFF)=-7V 8 VBE(OFF)=-5V VBE(OFF)=-3V 6 4 VCC=50V, LC=1mH IC/IB=5, IB2=-1.0A RBB=0.7 Ohms 2 VCC=50V, LC=1mH VBE(OFF)=-5V, IB2=-1.0A RBB=0.7 Ohms 8 6 Ic/Ib = 4 4 Ic/Ib = 3 2 0 0 0 100 200 300 400 500 600 700 1 800 2 VCE [V], COLLECTOR-EMITTER VOLTAGE 4 5 6 7 8 Figure 10. Power Derating 60 Ic/Ib = 5 200 3 IC [A], COLLECTOR CURRENT Figure 9. RBSOA Turn-on Pulse Width vs Collector Current Ic/Ib = 4 VCC=50V, LC=1mH VBE(OFF)=-5V, IB2=-1.0A RBB=0.7 Ohms 50 PC[W], POWER DISSIPATION 160 Turn-on PW [uS] Ic/Ib = 5 Ic/Ib = 3 120 80 40 40 30 20 10 0 0 1 2 3 4 5 6 7 0 8 IC [A], COLLECTOR CURRENT 25 50 75 100 125 150 175 o Tc[ C], CASE TEMPERATURE Figure 11. RBSOA Test Circuit © 2009 Fairchild Semiconductor Corporation FJD3305H1 Rev. A www.fairchildsemi.com 4 FJD3305H1 — NPN Silicon Transistor Figure 7. Reverse Biased Safe Operating Area FJD3305H1 — NPN Silicon Transistor Mechanical Dimensions D-PAK Dimensions in Millimeters © 2009 Fairchild Semiconductor Corporation FJD3305H1 Rev. A www.fairchildsemi.com 5 FJD3305H1 NPN Silicon Transistor © 2009 Fairchild Semiconductor Corporation FJD3305H1 Rev. A www.fairchildsemi.com 6