INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD122 DESCRIPTION ·Low Collector-Emitter saturation voltage ·Lead formed for surface mount applications ·High DC current gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A PC Total Power Dissipation @ Ta=25℃ 1.75 W PC Collector Power Dissipation TC=25℃ 20 W 6．25 ℃/W 150 ℃ -55~150 ℃ Rth j-a TJ Tstg Thermal Ambient Resistance,Junction Junction Temperature Storage Temperature Range isc website：www.iscsemi.com to 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD122 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC=4A; IB= 16mA 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC=8A; IB= 80mA 4.0 V VBE(sat) Base-Emitter Saturation Voltage IC=8A; IB= 80mA 4.5 V VBE(ON) Base-Emitter voltage IC= 4A; VCE= 4V 2.8 V ICEO Collector Cutoff Current VCE=50V; IE= 0 10 uA IEBO Emitter Cutoff Current VEB=5V; IC= 0 2 mA hFE1 DC Current Gain IC= 4A; VCE= 4V 1000 hFE2 DC Current Gain IC=8A; VCE= 4V 100 Current-Gain—Bandwidth Product IC=3A; VCE= 4V 4 Output Capacitance IE=0; VCB= 10V; f= 1.0MHz fT COB isc website：www.iscsemi.com 2 100 UNIT V 12000 MHz 200 pF isc & iscsemi is registered trademark