MOTOROLA MMBF2202PT1 Low rds small signal mosfets tmos single p channel field effect transistor Datasheet

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by MMBF2202PT1/D
SEMICONDUCTOR TECHNICAL DATA

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Part of the GreenLine Portfolio of devices with energy–conserving traits.
These miniature surface mount MOSFETs utilize Motorola’s
High Cell Density, HDTMOS process. Low rDS(on) assures
minimal power loss and conserves energy, making this device
ideal for use in small power management circuitry. Typical
applications are dc–dc converters, power management in
portable and battery–powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.

Motorola Preferred Device
P–CHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
rDS(on) = 2.2 OHM
3 DRAIN
3
1
2
1
GATE
• Low rDS(on) Provides Higher Efficiency and Extends Battery
Life
• Miniature SC–70/SOT–323 Surface Mount Package Saves
Board Space
CASE 419–02, STYLE 8
SC–70/SOT–323
2 SOURCE
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
VDSS
20
Vdc
Gate–to–Source Voltage — Continuous
VGS
± 20
Vdc
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Pulsed Drain Current (tp ≤ 10 µs)
ID
ID
IDM
300
240
750
mAdc
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
PD
150
1.2
mW
mW/°C
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Thermal Resistance — Junction–to–Ambient
RθJA
833
°C/W
TL
260
°C
Rating
Drain–to–Source Voltage
Maximum Lead Temperature for Soldering Purposes, for 10 seconds
DEVICE MARKING
P3
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Reel Size
Tape Width
Quantity
MMBF2202PT1
Device
7″
8 mm embossed tape
3000
MMBF2202PT3
13″
8 mm embossed tape
10,000
GreenLine is a trademark of Motorola, Inc.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola
Transistors, FETs and Diodes Device Data

Motorola, Small–Signal
Inc. 1998
1
MMBF2202PT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
20
—
—
Vdc
—
—
—
—
1.0
10
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µA)
µAdc
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
—
—
±100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
VGS(th)
1.0
1.7
2.4
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 200 mAdc)
(VGS = 4.5 Vdc, ID = 50 mAdc)
rDS(on)
—
—
1.5
2.0
2.2
3.5
gFS
—
600
—
mMhos
pF
ON CHARACTERISTICS(1)
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)
Ohms
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 V)
Ciss
—
50
—
Output Capacitance
(VDS = 5.0 V)
Coss
—
45
—
Transfer Capacitance
(VDG = 5.0 V)
Crss
—
20
—
td(on)
—
2.5
—
tr
—
1.0
—
td(off)
—
16
—
tf
—
8.0
—
QT
—
2700
—
pC
IS
—
—
0.3
A
Pulsed Current
ISM
—
—
0.75
Forward Voltage(2)
VSD
—
1.5
—
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(VDD = –15
15 Vdc,
Vd
RL = 75 Ω,
Ω ID = 200 mAdc,
mAdc
VGEN = –10 V,, RG = 6.0 Ω))
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge (See Figure 5)
(VDS = 16 V, VGS = 10 V,
ID = 200 mA)
ns
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
V
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
TYPICAL CHARACTERISTICS
8
ID = 200 mA
6
4
2
0
2
4.0
rDS(on) , ON RESISTANCE (OHMS)
rDS(on) , ON RESISTANCE (OHMS)
10
0
1
2
3
4
5
6
7
8
9
3.5
3.0
2.5
2.0
VGS = 10 V
ID = 200 mA
1.5
1.0
0.5
0
10
VGS = 4.5 V
ID = 50 mA
– 40
– 20
0
20
40
60
80
100 120
140
VGS, GATE–SOURCE VOLTAGE (VOLTS)
TEMPERATURE (°C)
Figure 1. On Resistance versus Gate–Source Voltage
Figure 2. On Resistance versus Temperature
160
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMBF2202PT1
1.0
0.9
5
4
I D, DRAIN CURRENT (AMPS)
rDS(on) , ON RESISTANCE (OHMS)
6
VGS = 4.5 V
3
VGS = 10 V
2
1
0.8
0.7
– 55
0.6
0.5
150
25
0.4
0.3
0.2
0.1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
0.8
0.5
1.0
1.5
2.0 2.5
3.0
3.5 4.0
Figure 3. On Resistance versus Drain Current
Figure 4. Transfer Characteristics
5.5
6.0
9
10
ID(on), DRAIN CURRENT (AMPS)
0.8
25°
0.1
150°
0.01
VGS = 5 V
0.7
0.6
VGS = 4.5 V
0.5
VGS = 4 V
0.4
0.3
VGS = 3.5 V
0.2
VGS = 3 V
0.1
0.001
4.5 5.0
VGS, GATE–SOURCE VOLTAGE (VOLTS)
1
IS , SOURCE CURRENT (AMPS)
0
ID, DRAIN CURRENT (AMPS)
0
0.5
1.0
1.5
2.0
0
2.5
0
1
2
3
4
5
6
7
8
VSD, SOURCE–DRAIN FORWARD VOLTAGE (VOLTS)
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 5. Source–Drain Forward Voltage
Figure 6. On Region Characteristics
50
45
VGS = 0 V
f = 1 MHz
C, CAPACITANCE (pF)
40
35
30
25
20
Ciss
15
Coss
10
5
0
Crss
0
2
4
6
8
10
12
14
16
18
20
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
MMBF2202PT1
INFORMATION FOR USING THE SC–70/SOT–323 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.025
0.025
0.65
0.65
0.075
1.9
0.035
0.9
0.028
inches
0.7
mm
SC–70/SOT–323
SC–70/SOT–323 POWER DISSIPATION
The power dissipation of the SC–70/SOT–323 is a function
of the drain pad size. This can vary from the minimum pad
size for soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device
junction to ambient, and the operating temperature, TA.
Using the values provided on the data sheet for the
SC–70/SOT–323 package, PD can be calculated as follows:
PD =
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 150 milliwatts.
PD =
150°C – 25°C
833°C/W
= 150 milliwatts
The 833°C/W for the SC–70/SOT–323 package assumes
the use of the recommended footprint on a glass epoxy
printed circuit board to achieve a power dissipation of 150
milliwatts. There are other alternatives to achieving higher
power dissipation from the SC–70/SOT–323 package.
Another alternative would be to use a ceramic substrate or
an aluminum core board such as Thermal Clad. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference should be a maximum of 10°C.
4
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMBF2202PT1
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
L
3
B
S
1
2
D
V
G
C
0.05 (0.002)
R N
J
K
H
DIM
A
B
C
D
G
H
J
K
L
N
R
S
V
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.035
0.049
0.012
0.016
0.047
0.055
0.000
0.004
0.004
0.010
0.017 REF
0.026 BSC
0.028 REF
0.031
0.039
0.079
0.087
0.012
0.016
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.90
1.25
0.30
0.40
1.20
1.40
0.00
0.10
0.10
0.25
0.425 REF
0.650 BSC
0.700 REF
0.80
1.00
2.00
2.20
0.30
0.40
STYLE 8:
PIN 1. GATE
2. SOURCE
3. DRAIN
CASE 419–02
SC–70/SOT–323
ISSUE J
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
MMBF2202PT1
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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Mfax is a trademark of Motorola, Inc.
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Motorola Small–Signal Transistors, FETs and DiodesMMBF2202PT1/D
Device Data
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