AOD606 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. n-channel p-channel -40V VDS (V) = 40V -8A (VGS = -10V) ID = 8A (VGS=10V) RDS(ON) RDS(ON) < 33 mΩ (VGS=10V) < 50 mΩ (VGS = -10V) < 47 mΩ (VGS=4.5V) < 70 mΩ (VGS = -4.5V) -RoHS Compliant -Halogen Free* Top View 100% UIS Tested! TO-252-4L D-PAK Bottom View D D1/D2 G1 G2 S1 G2 S1 G1 S2 D1/D2 S2 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS 40 Drain-Source Voltage VGS Gate-Source Voltage ±20 Continuous Drain G Current Pulsed Drain Current Avalanche Current TC=100°C C Repetitive avalanche energy L=0.3mH Power Dissipation B Power Dissipation A C TC=25°C TC=100°C TA=25°C TA=70°C ±20 V -8 ID IDM 6.3 -6.3 30 -30 IAR 12 14 A EAR 21.6 29.4 mJ 20 30 10 15 1.6 1.7 1 1.1 -55 to 175 -55 to 175 PD PDSM TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Case B A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient B Steady-State Maximum Junction-to-Case Alpha & Omega Semiconductor, Ltd. Units V 8 TC=25°C C Max p-channel -40 Symbol RθJA RθJC RθJA RθJC A W W °C Device n-ch n-ch n-ch Typ 25 66 7 Max 30 80 7.5 °C/W °C/W °C/W p-ch p-ch p-ch 17 60 4 25 75 5 °C/W °C/W °C/W www.aosmd.com AOD606 N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=10mA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 30 TJ=55°C VGS=10V, ID=8A TJ=125°C VGS=4.5V, ID=6A Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 40 VDS=32V, VGS=0V IDSS RDS(ON) Typ 5 µA 100 nA 2.3 3 V 27 33 39 52 37 47 mΩ 1 V A gFS Forward Transconductance VDS=5V, ID=8A 25 VSD Diode Forward Voltage IS=1A, VGS=0V 0.76 mΩ S IS Maximum Body-Diode Continuous Current 8 A ISM Pulsed Body-Diode CurrentC 30 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 404 pF VGS=0V, VDS=20V, f=1MHz 95 pF 37 pF VGS=0V, VDS=0V, f=1MHz 2.7 Ω 9.2 nC 4.5 nC 1.6 nC SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge VGS=10V, VDS=20V, ID=8A Qgs Gate Source Charge Qgd Gate Drain Charge 2.6 nC tD(on) Turn-On DelayTime 3.5 ns tr Turn-On Rise Time 6 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=20V, RL=2.5Ω, RGEN=3Ω 13.2 ns 3.5 ns IF=8A, dI/dt=100A/µs 22.9 Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs 18.3 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev5: Sep. 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD606 N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 30 10V 5V VDS=5V 25 4.5V 15 20 ID(A) ID (A) 4V 15 10 125°C 10 5 VGS=3.5V 5 25°C 0 0 0 1 2 3 4 2 5 2.5 50 3.5 4 4.5 Normalized On-Resistance 1.8 45 VGS=4.5V RDS(ON) (mΩ ) 3 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 40 35 30 25 VGS=10V VGS=10V ID=8A 1.6 1.4 VGS=4.5V ID=6A 1.2 1 20 0 4 8 12 16 0.8 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 1.0E+01 ID=8A 90 1.0E+00 125°C 80 1.0E-01 125°C IS (A) RDS(ON) (mΩ ) 70 60 1.0E-02 50 25°C 1.0E-03 40 30 1.0E-04 25°C 20 1.0E-05 10 0.0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOD606 N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 700 10 Capacitance (pF) VGS (Volts) 600 VDS=20V ID=8A 8 6 4 Ciss 500 400 300 Coss 200 Crss 2 100 0 0 2 4 6 8 0 10 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 10µs 15 20 25 30 35 VDS (Volts) Figure 8: Capacitance Characteristics 160 ID (Amps) 1ms 10ms 1.0 40 TJ(Max)=175°C TA=25°C 100µs Power (W) 10.0 10 200 TJ(Max)=175°C, T A=25°C RDS(ON) limited 5 120 80 DC 40 0 0.0001 0.001 0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=7.5°C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD606 N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 45 25 40 Power Dissipation (W) ID(A), Peak Avalanche Current L ⋅ ID BV − VDD tA = TA=25°C 50 35 TA=150°C 30 25 20 15 10 20 15 10 5 5 0 0.000001 0 0.00001 0.0001 0 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) 10 50 8 40 TA=25°C 6 Power (W) Current rating ID(A) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 4 2 30 20 10 0 0 25 50 75 100 125 150 0 0.001 175 TCASE (°C) Figure 14: Current De-rating (Note B) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 0.01 0.001 0.00001 Single Pulse 0.0001 0.001 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=30°C/W 0.01 0.1 PD Ton 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD606 P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-10mA, VGS=0V -40 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -30 TJ=55°C VGS=-10V, ID=-8A Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-4A gFS Forward Transconductance VDS=-5V, ID=-8A VSD Diode Forward Voltage IS=-1A,VGS=0V Max Units V VDS=-32V, VGS=0V IDSS RDS(ON) Typ -5 µA ±100 nA -1.8 -3 V 35 50 A 62 55 70 16 -0.75 mΩ mΩ S -1 V IS Maximum Body-Diode Continuous Current -8 A ISM Pulsed Body-Diode CurrentC -30 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 657 pF VGS=0V, VDS=-20V, f=1MHz 143 pF 63 pF VGS=0V, VDS=0V, f=1MHz 6.5 Ω 14.1 nC SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) 7 nC 2.2 nC Gate Drain Charge 4.1 nC Turn-On DelayTime 8 ns 12.2 ns Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr VGS=-10V, VDS=-20V, ID=-8A VGS=-10V, VDS=-20V, RL=2.5Ω, RGEN=3Ω 24 ns 12.5 ns IF=-8A, dI/dt=100A/µs 23.2 Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/µs 18.2 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev5: Sep. 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD606 P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) 30 25 -5V -10V -4.5V 25 VDS=-5V ID=-10mA, VGS=0V -6V 20 15 VGS=-4V -ID(A) -ID (A) 20 15 10 10 125°C -3.5V -3V 5 5 25°C 0 0 0 1 2 3 4 0 5 2 3 4 5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 80 Normalized On-Resistance 1.80 VGS=-4.5V 70 RDS(ON) (mΩ ) 1 60 50 40 30 VGS=-10V VGS=-10V ID=-8A 1.60 1.40 VGS=-4.5V ID=-6A 1.20 1.00 0.80 20 0 4 8 12 16 0 20 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 120 1.0E+01 ID=-8A 1.0E+00 100 125°C 80 125°C 60 -IS (A) RDS(ON) (mΩ ) 1.0E-01 1.0E-02 1.0E-03 25°C 1.0E-04 40 25°C 20 2.00E+00 4.00E+00 6.00E+00 8.00E+00 1.00E+01 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOD606 P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) 1200 10 VDS=-20V ID=-8A 1000 ID=-10mA, VGS=0V Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 800 600 400 Coss 2 200 Crss 0 0 0 4 8 12 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 16 100.0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 200 TJ(Max)=175°C, T A=25°C 10µs RDS(ON) limited 10.0 100µs 1.0 1ms 10ms DC Power (W) 160 -ID (Amps) 30 TJ(Max)=175°C TA=25°C 120 80 40 0.1 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) -VDS (Volts) 10 0 0.0001 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=5°C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD606 P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) L ⋅ ID tA = BV −VVGSDD ID=-10mA, =0V TA=25°C 90 80 70 TA=150°C 60 50 40 30 20 60 50 Power Dissipation (W) -ID(A), Peak Avalanche Current 100 40 30 20 10 10 0 0 0.000001 0.00001 0 0.0001 25 100 125 150 175 TA=25°C 50 8 40 Power (W) Current rating -ID(A) 75 60 10 6 4 30 20 2 10 0 0 10 Zθ JA Normalized Transient Thermal Resistance 50 TCASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note B) 0 0.001 175 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 0.01 0.001 0.00001 Single Pulse 0.0001 0.001 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=25°C/W 0.01 0.1 PD Ton 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD606 N-Channel Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id Vgs Vgs + Vdd I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com AOD606 P-Channel Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgs Vds Qgd + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton td(on) Vgs - DUT Vgs td(off) tr tf 90% Vdd VDC + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L EAR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com