Vishay IL66B-2X006 Optocoupler, photodarlington output, with internal rbe Datasheet

IL66B
VISHAY
Vishay Semiconductors
Optocoupler, Photodarlington Output, With Internal RBE
Features
•
•
•
•
•
•
•
Internal RBE for high stability
Isolation test voltage, 5300 VRMS
No base connection
High isolation resistance
Standard plastic DIP package
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
A 1
6 NC
C 2
5 C
NC 3
4 E
e3
i179019
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• BSI IEC60950 IEC60065
• CSA 93751
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
• FIMKO
Description
The IL66B is an optically coupled isolator employing
a gallium arsenide infrared emitter and a silicon photodarlington detector. Switching can be accomplished
while maintaining a high degree of isolation between
Pb
Pb-free
driving and load circuits. They can be used to replace
reed and mercury relays with advantages of long life,
high speed switching and elimination of magnetic
fields.
Order Information
Part
IL66B-1
Remarks
CTR > 200 %, DIP-6
IL66B-2
CTR > 750 %, DIP-6
IL66B-1X006
CTR > 200 %, DIP-6 400 mil (option 6)
IL66B-2X006
CTR > 750 %, DIP-6 400 mil (option 6)
IL66B-2X009
CTR > 750 %, SMD-6 (option 9)
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Symbol
Value
Peak reverse voltage
Parameter
VR
6.0
V
Forward continuous current
IF
60
mA
Pdiss
100
mW
1.33
mW/°C
Power dissipation
Derate linearly from 55 °C
Document Number 83639
Rev. 1.5, 26-Oct-04
Test condition
Unit
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1
IL66B
Vishay Semiconductors
Output
Symbol
Value
Unit
Collector-emitter breakdown voltage
Parameter
Test condition
BVCEO
60
V
Emitter-collector breakdown voltage
BVECO
5.0
V
Pdiss
200
mW
2.6
mW/°C
Power dissipation
Derate linearly from 25 °C
Coupler
Symbol
Value
Unit
Isolation test voltage
Parameter
t = 1.0 sec.
Test condition
VISO
5300
VRMS
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥
Ω
Total dissipation
Ptot
1011
250
mW
3.3
mW/°C
Creepage path
7
min mm
Clearance path
7
min mm
Derate linearly
from 25 °C
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Tsld
10
sec.
Lead soldering time
at 260 °C
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Typ.
Max
Forward voltage
Parameter
IF = 10 mA
Test condition
Symbol
VF
Min
1.25
1.5
Unit
V
Reverse current
VR = 3.0 V
IR
0.01
100
µA
Capacitance
VR = 0
CO
25
pF
Output
Parameter
Test condition
Collector-emitter breakdown
voltage
IC = 100 µA
Collector-emitter leakage
current
VCE = 50 V, IF = 0
Symbol
Min
BVCEO
60
Typ.
Max
Unit
V
ICEO
1.0
100
nA
Typ.
Max
Unit
1.0
V
Coupler
Parameter
Saturation voltage
Test condition
IC = 10 mA
Symbol
Min
VCEsat
Current Transfer Ratio
Parameter
Current Transfer Ratio
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2
Test condition
IF = 2.0 mA, VCE = 5.0 V
Part
Symbol
Min
IL66B-1
CTR
200
IL66B-2
CTR
750
Typ.
Max
Unit
%
1000
%
Document Number 83639
Rev. 1.5, 26-Oct-04
IL66B
Vishay Semiconductors
Switching Characteristics
Parameter
Test condition
VCC = 10 V, IF = 2 mA,
RL = 100 Ω
Turn-On, Turn-Off time
Symbol
Min
Typ.
ton, toff
Max
Unit
200
µs
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1.4
10000
1.2
Ta = 25°C
1.1
1.0
0.9
Vce = 5 V
1000
Ta = –55°C
Ice - Collector-emitter
current - mA
VF - Forward Voltage - V
1. 3
Ta = 85°C
100
Vce = .4 V
10
1
.1
.01
0.8
.001
0.7
.1
1
10
IF - Forward Current - mA
.1
100
10
1
IF - LED Current - mA
100
iil66b_01
iil66b_04
Figure 1. Forward Voltage vs. Forward Current
Figure 4. Non-Saturated and Saturated Collector Emitter Current
vs. LED Current
tpHL - High/Low Propagation
Delay - µs
NCTRce - Normalized CTRce
2.0
Normalized to:
Vce = 5 V
1.5
Vce = 5 V
IF = 2 mA
1.0
0.5
Vce = 1 V
40
Vcc = 5 V
10 KΩ
ı
Vth = 1.5 V
30
220 ıΩ
20
10
0
0.0
.1
10 0
1
10
IF - LED Current - mA
iil66b_02
5
0
10
15
IF - LED Current - mA
20
iil66b_05
Figure 2. Normalized Non-saturated and Saturated CTRCE vs.
LED Current
1.2
Figure 5. High to low Propagation Delay vs. Collector Load
Resistance and LED Current
150
Normalized to:
1.0
Vce = 5 V
0.8
IF = 10 mA
tpLH - Low/High Propagation
Delay - µs
NCTRce - Normalized CTRce
50
Vce = 5 V
0.6
0.4
0.2
Vce = .4 V
0.0
10 KΩ
125
100
2 KΩ
75
Vcc = 5 V
50
Vth = 1.5 V
25
220 KΩ
0
.1
1
10
100
1000
0
IF - LED Current - mA
iil66b_03
Figure 3. Normalized Non-saturated and Saturated CTRCE vs.
LED Current
Document Number 83639
Rev. 1.5, 26-Oct-04
5
10
15
20
IF - LED Current - mA
iil66b_06
Figure 6. Low to High Propagation Delay vs. Collector Load
Resistance and LED Current
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3
IL66B
Vishay Semiconductors
Package Dimensions in Inches (mm)
3
2
1
4
5
6
pin one ID
.248 (6.30)
.256 (6.50)
ISO Method A
.335 (8.50)
.343 (8.70)
.300 (7.62)
typ.
.048 (0.45)
.022 (0.55)
.039
(1.00)
Min.
.130 (3.30)
.150 (3.81)
4°
typ.
.018 (0.45)
.022 (0.55)
18°
.031 (0.80) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
3°–9°
.114 (2.90)
.130 (3.0)
.010 (.25)
typ.
.300–.347
(7.62–8.81)
i178004
Option 6
Option 9
.375 (9.53)
.395 (10.03)
.407 (10.36)
.391 (9.96)
.307 (7.8)
.291 (7.4)
.300 (7.62)
ref.
.0040 (.102)
.0098 (.249)
18493
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4
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
.012 (.30) typ.
.020 (.51)
.040 (1.02)
.315 (8.00)
min.
15° max.
Document Number 83639
Rev. 1.5, 26-Oct-04
IL66B
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83639
Rev. 1.5, 26-Oct-04
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