Taychipst ERA18-02 Fast recovery diode Datasheet

ERA18-02 THRU ERA18-04
FAST RECOVERY DIODE
200V-400V 0.8A
FEATURES
High speed switching
Ultra small package
Possible for 5mm pitch automatic insertion
High reliability
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute maximum ratings
Item
Symbol
Rating
Conditions
-02
-04
Unit
Repetitive peak reverse voltage
VRRM
200
400
V
Non-repetitive peak renerse voltage
VRSM
200
400
V
Average forward current
IF(AV)
Resistive load (Ta=40°C)
Surge current
IFSM
Sine wave 10ms
Operating junction temperature
Tj
-40 to +140
°C
Storage temperature
Tstg
-40 to +140
°C
Max.
Unit
0.8
30
A
A
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Symbol
Conditions
Forward voltage drop
VFM
IFM=0.8A
Reverse current
IRRM
VR=VRRM
Reverse recovery time
t rr
IF=0.1A, IR=0.1A
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1 of 2
1.05
10
0.4
V
µA
µs
Web Site: www.taychipst.com
ERA18-02 THRU ERA18-04
200V-400V 0.8A
FAST RECOVERY DIODE
RATINGS AND CHARACTERISTICS CURVES
Forward Characteristic
ERA18-02 THRU ERA18-04
Reverse Characteristic
(typ.)
10
(typ.)
3
10
10
o
Reverse Current ( µA)
Tj=25 C
1
Forward Current (A)
2
o
Tj=100 C
10
10
1
0
o
Tj= 25 C
-1
10
IF
IR
0.1
o
Tj=100 C
0.01
0.2
-2
10
0.4
0.6
VF
0.8
1.0
Forward Voltage
1.2
0
1.4
100
150
VR
(V)
200
250
300
Reverse Voltage
350
400
450
(V)
Junction Capacitance Characteristic (typ.)
Current Derating (Io-Ta)
100
1.2
Junction Capacitance (pF)
1.0
0.8
0.6
0.4
10
Cj
Io
Average Output Current (A)
50
0.2
1
0.0
0
20
40
Ta
60
80
100
120
1
140
Ambient Temperature
10
VR
o
( C)
100
Reverse Voltage
(V)
Surge Capability
10
I FSM
Peak Half - Wave Current (A)
100
1
1
10
Number of Cycles at 50Hz
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2 of 2
Web Site: www.taychipst.com
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