ON NTLGF3501N Power mosfet and schottky diode Datasheet

NTLGF3501N
Power MOSFET and
Schottky Diode
20 V, 4.6 A FETKY), N−Channel,
2.0 A Schottky Barrier Diode, DFN6
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Features
•
•
•
•
MOSFET
Flat Lead 6 Terminal Package 3x3x1 mm
Reduced Gate Charge to Improve Switching Response
Enhanced Thermal Characteristics
This is a Pb−Free Device
V(BR)DSS
RDS(on) TYP
ID TYP
20 V
70 mW @ 4.5 V
4.6 A
SCHOTTKY DIODE
Applications
• Buck Converter, Inverting Buck/Boost
• High Side DC−DC Conversion Circuits
• Power Management in Portable, HDD and Computing
VR MAX
VF TYP
IF MAX
20 V
0.36 V
2.0 A
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Value
Unit
Drain−to−Source Voltage
VDSS
20
V
Gate−to−Source Voltage
VGS
±12
V
ID
3.4
A
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
TA = 85°C
2.5
t ≤ 10 s
TA = 25°C
4.6
Steady
State
PD
Continuous Drain
Current (Note 2)
Heatsink 2
W
1.74
2.8
PD
1.14
W
IDM
13.8
A
TJ, TSTG
−55 to
150
°C
Source Current (Body Diode)
IS
1.7
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Power Dissipation
(Note 2)
Pulsed Drain Current
TA = 85°C
TA = 25°C
tp = 10 ms
Operating Junction and Storage Temperature
2
3
6
5
4
5
ID
Steady
State
2
1
1, 6
2, 5
3
4
6
3.13
TA = 25°C
1
3
TA = 25°C
t ≤ 10 s
Heatsink 1
4
Symbol
Parameter
= Anode
= Source/Cathode
= Gate
= Drain
MARKING
DIAGRAMS
A
2.0
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
(Cu area = 0.5 in sq).
DFN6
CASE 506AG
1
3501
A
Y
WW
G
1
3501
AYWW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NTLGF3501NT1G
DFN6
3000 / Tape & Reel
(Pb−free)
NTLGF3501NT2G
DFN6
3000 / Tape & Reel
(Pb−free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 1
1
Publication Order Number:
NTLGF3501N/D
NTLGF3501N
SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Peak Repetitive Reverse Voltage
Symbol
Max
Unit
VRRM
20
V
DC Blocking Voltage
VR
20
V
Average Rectified Forward Current
IF
2.0
A
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 2)
RqJA
110
°C/W
Junction−to−Ambient – t ≤ 10 s (Note 2)
RqJA
56
°C/W
Junction−to−Ambient – Steady State (Note 3)
RqJA
72
°C/W
Junction−to−Ambient – t ≤ 10 s (Note 3)
RqJA
40
°C/W
THERMAL RESISTANCE RATINGS
Parameter
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
20
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
22
VDS = 16 V, VGS = 0 V
TJ = 25°C
VDS = 0 V, VGS = ±12 V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
Gate Threshold
Temperature Coefficient
VGS(TH)/TJ
mV/°C
1.0
TJ = 125°C
IGSS
Gate−to−Source Leakage Current
V
mA
10
100
nA
2.0
V
ON CHARACTERISTICS (Note 4)
Drain−to−Source On−Resistance
RDS(on)
Forward Transconductance
gFS
0.6
−2.8
mV/°C
VGS = 4.5, ID = 3.4 A
70
90
VGS = 2.5, ID = 1.7 A
95
120
VDS = 10 V, ID = 3.4 A
6.7
mW
S
CHARGES AND CAPACITANCES
CISS
Input Capacitance
Output Capacitance
COSS
Reverse Transfer Capacitance
VGS = 0 V, f = 1.0 MHz,
VDS = 10 V
144
275
67
125
pF
CRSS
22
40
Total Gate Charge
QG(TOT)
2.1
10
nC
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
0.7
td(ON)
4.8
10
ns
13.6
25
9.0
20
1.9
5.0
VGS = 4.5 V, VDS = 10 V,
ID = 3.4 A
0.11
0.42
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 4.5 V, VDD = 16 V,
ID = 3.4 A, RG = 2.5 W
tf
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTLGF3501N
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
TJ = 25°C
0.8
1.15
V
TJ = 150°C
0.63
V
12
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V, IS = 1.7 A
8.0
VGS = 0 V, IS = 1.0 A ,
dIS/dt = 100 A/ms
4.0
QRR
5.0
nC
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Conditions
Typ
Max
Unit
Maximum Instantaneous
Forward Voltage
Parameter
VF
IF = 0.1 A
Min
0.32
0.34
V
IF = 1.0 A
0.36
0.39
Maximum Instantaneous
Reverse Current
IR
VR = 5.0 V
100
mA
VR = 5 V, TJ = 100°C
12
mA
VR = 10 V
70
VR = 20 V
255
6. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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3
mA
NTLGF3501N
TYPICAL N−CHANNEL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
7
TJ = 25°C
6
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
7
2.2 V
VGS = 2.4 V to 10 V
5
4
2V
3
1.8 V
2
1
VDS ≥ 10 V
6
5
4
3
100°C
2
25°C
1
1.6 V
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
3.6
4
1
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1.5
2
2.5
3
3.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
0.2
ID = 3.4 A
TJ = 25°C
0.1
0
1
2
3
4
5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
6
TJ = 25°C
0.1
VGS = 2.5 V
0.08
VGS = 4.5 V
0.06
0.04
1.5
2.5
3.5
4.5
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1000
1.8
VGS = 0 V
ID = 3.4 A
VGS = 4.5 V
IDSS, LEAKAGE (nA)
1.6
4
0.12
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
TJ = −55°C
0
1.4
1.2
1
TJ = 150°C
100
10
TJ = 100°C
0.8
0.6
−50
1
−25
0
25
50
75
100
125
150
5
10
15
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
20
NTLGF3501N
TYPICAL N−CHANNEL PERFORMANCE CURVES
VGS = 0 V
C, CAPACITANCE (pF)
VDS = 0 V
300
VGS, GATE−TO−SOURCE VOLTAGE (V)
400
TJ = 25°C
CISS
200
100
CRSS
COSS
0
10
5
VGS
0
VDS
5
10
12
4
QGS
QGD
4
2
ID = 3.4 A
TJ = 25°C
0
2
0
1
2
Qg, TOTAL GATE CHARGE (nC)
100
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
IS, SOURCE CURRENT (AMPS)
VDS = 16 V
ID = 3.4 A
VGS = 4.5 V
t, TIME (ns)
VGS
6
Figure 7. Capacitance Variation
tr
td(off)
td(on)
tf
1
1
Rthja(t), EFFECTIVE TRANSIENT THERMAL RESPONSE
8
VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
10
10
QT
0
20
15
6
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
(TJ = 25°C unless otherwise noted)
10
100
VGS = 0 V
TJ = 100°C
TJ = 25°C
TJ = 150°C
1
TJ = −55°C
0.1
0.4
0.5
0.6
0.7
0.8
1.0
0.9
RG, GATE RESISTANCE (OHMS)
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.1
0.01
t, TIME (s)
Figure 11. FET Thermal Response
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5
1
10
100
1000
NTLGF3501N
TYPICAL SCHOTTKY PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
10
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
10
TJ = 100°C
TJ = 125°C
1
TJ = 25°C
TJ = −40°C
0.1
0.10
0.30
1
TJ = 25°C
0.1
0.10
0.50
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
IR, MAXIMUM REVERSE CURRENT (AMPS)
IR, REVERSE CURRENT (AMPS)
TJ = 125°C
10E−3
TJ = 100°C
1E−3
1E+0
100E−3
TJ = 125°C
10E−3
TJ = 100°C
1E−3
100E−6
100E−6
TJ = 25°C
10E−6
TJ = 25°C
10E+0
20
10
VR, REVERSE VOLTAGE (VOLTS)
0
0
PFO, AVERAGE POWER DISSIPATION (WATTS)
3.5
freq = 20 kHz
2.5
2
1.5
dc
square wave
Ipk/Io = p
Ipk/Io = 5
1
Ipk/Io = 10
0.5
Ipk/Io = 20
0
25
45
65
85
105
10
VR, REVERSE VOLTAGE (VOLTS)
20
Figure 15. Maximum Reverse Current
Figure 14. Typical Reverse Current
3
0.50
Figure 13. Maximum Forward Voltage
1E+0
IO, AVERAGE FORWARD CURRENT (AMPS)
0.30
VF, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
Figure 12. Typical Forward Voltage
100E−3
TJ = 100°C
TJ = 125°C
125
145
TL, LEAD TEMPERATURE (°C)
1.8
1.6
square wave
Ipk/Io = p
Ipk/Io = 5
Ipk/Io = 10
1.4
1.2
dc
1 Ipk/Io = 20
0.8
0.6
0.4
0.2
0
0
Figure 16. Current Derating
0.5
1
1.5
2
2.5
3
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 17. Forward Power Dissipation
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6
3.5
Rthja(t), EFFECTIVE TRANSIENT THERMAL RESPONSE
NTLGF3501N
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.1
0.01
t, TIME (s)
1
Figure 18. Thermal Response Junction−to−Ambient
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7
10
100
1000
NTLGF3501N
PACKAGE DIMENSIONS
DFN6 3*3 MM, 0.95 PITCH
CASE 506AG−01
ISSUE O
NOTES:
1. DIMENSIONS AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMESNION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.25 AND 0.30
MM FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
A
D
B
PIN 1
REFERENCE
2X
0.15 C
2X
0.15 C
ÇÇÇ
ÇÇÇ
ÇÇÇ
ÇÇÇ
E
DIM
A
A1
A3
b
D
D2
D3
E
E2
e
K
L
H1
H2
TOP VIEW
0.10 C
A
6X
0.08 C
SEATING
PLANE
(A3)
SIDE VIEW
C
A1
MILLIMETERS
MIN
NOM MAX
0.80
0.90
1.00
0.00
0.03
0.05
0.20 REF
0.35
0.40
0.45
3.00 BSC
1.00
1.10
1.20
0.65
0.75
0.85
3.00 BSC
1.50
1.60
1.70
0.95 BSC
0.21
−−−
−−−
0.30
0.40
0.50
0.05 REF
0.40 REF
D2
6X
D3
L
e
1
SOLDERING FOOTPRINT*
4X
3
0.450
0.0177
0.850
0.0334
0.950
0.0374
3.31
0.130
1.700
0.685
E2
6X
K
6
4
H1
H2
BOTTOM VIEW
6X
b
(NOTE 3)
0.10 C A B
0.05 C
0.63
0.025
1.20
0.0472
0.35
0.014
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
FETKY is a registered trademark of International Rectifier Corporation.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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NTLGF3501P/D