Revision 10 SmartFusion Customizable System-on-Chip (cSoC) Microcontroller Subsystem (MSS) • • • • • • • • • • • • ® Hard 100 MHz 32-Bit ARM Cortex™-M3 – 1.25 DMIPS/MHz Throughput from Zero Wait State Memory – Memory Protection Unit (MPU) – Single Cycle Multiplication, Hardware Divide – JTAG Debug (4 wires), Serial Wire Debug (SWD, 2 wires), and Single Wire Viewer (SWV) Interfaces Internal Memory – Embedded Nonvolatile Flash Memory (eNVM), 128 Kbytes to 512 Kbytes – Embedded High-Speed SRAM (eSRAM), 16 Kbytes to 64 Kbytes, Implemented in 2 Physical Blocks to Enable Simultaneous Access from 2 Different Masters Multi-Layer AHB Communications Matrix – Provides up to 16 Gbps of On-Chip Memory Bandwidth,1 Allowing Multi-Master Schemes 10/100 Ethernet MAC with RMII Interface2 Programmable External Memory Controller, Which Supports: – Asynchronous Memories – NOR Flash, SRAM, PSRAM – Synchronous SRAMs Two I2C Peripherals Two 16550 Compatible UARTs Two SPI Peripherals Two 32-Bit Timers 32-Bit Watchdog Timer 8-Channel DMA Controller to Offload the Cortex-M3 from Data Transactions Clock Sources – 32 KHz to 20 MHz Main Oscillator – Battery-Backed 32 KHz Low Power Oscillator with Real-Time Counter (RTC) – 100 MHz Embedded RC Oscillator; 1% Accurate – Embedded Analog PLL with 4 Output Phases (0, 90, 180, 270) High-Performance FPGA • • • • • Based on proven ProASIC®3 FPGA Fabric Low Power, Firm-Error Immune 130-nm, 7-Layer Metal, Flash-Based CMOS Process Nonvolatile, Instant On, Retains Program When Powered Off 350 MHz System Performance Embedded SRAMs and FIFOs – Variable Aspect Ratio 4,608-Bit SRAM Blocks – x1, x2, x4, x9, and x18 Organizations – True Dual-Port SRAM (excluding x18) • • • – Programmable Embedded FIFO Control Logic Secure ISP with 128-Bit AES via JTAG FlashLock® to Secure FPGA Contents Five Clock Conditioning Circuits (CCCs) with up to 2 Integrated Analog PLLs – Phase Shift, Multiply/Divide, and Delay Capabilities – Frequency: Input 1.5–350 MHz, Output 0.75 to 350 MHz Programmable Analog Analog Front-End (AFE) • • • • • Up to Three 12-Bit SAR ADCs – 500 Ksps in 12-Bit Mode – 550 Ksps in 10-Bit Mode – 600 Ksps in 8-Bit Mode Internal 2.56 V Reference or Optional External Reference One First-Order DAC (sigma-delta) per ADC – 8-Bit, 16-Bit, or 24-Bit 500 Ksps Update Rate Up to 5 High-Performance Analog Signal Conditioning Blocks (SCB) per Device, Each Including: – Two High-Voltage Bipolar Voltage Monitors (with 4 input ranges from ±2.5 V to –11.5/+14 V) with 1% Accuracy – High Gain Current Monitor, Differential Gain = 50, up to 14 V Common Mode – Temperature Monitor (Resolution = ¼°C in 12-Bit Mode; Accurate from –55°C to 150°C) Up to Ten High-Speed Voltage Comparators (tpd = 15 ns) Analog Compute Engine (ACE) • • • • Offloads Cortex-M3–Based MSS from Analog Initialization and Processing of ADC, DAC, and SCBs Sample Sequence Engine for ADC and DAC Parameter Set-Up Post-Processing Engine for Functions such as LowPass Filtering and Linear Transformation Easily Configured via GUI in Libero® System-on-Chip (SoC) Software I/Os and Operating Voltage • • • • FPGA I/Os – LVDS, PCI, PCI-X, up to 24 mA IOH/IOL – Up to 350 MHz MSS I/Os – Schmitt Trigger, up to 6 mA IOH, 8 mA IOL – Up to 180 MHz Single 3.3 V Power Supply with On-Chip 1.5 V Regulator External 1.5 V Is Allowed by Bypassing Regulator (digital VCC = 1.5 V for FPGA and MSS, analog VCC = 3.3 V and 1.5 V) 1 Theoretical maximum 2 A2F200 and larger devices January 2013 © 2013 Microsemi Corporation I SmartFusion Customizable System-on-Chip (cSoC) SmartFusion cSoC Family Product Table A2F060 FPGA Fabric A2F200 A2F500 TQ144 CS288 FG256 PQ208 CS288 FG256 FG484 PQ208 CS288 FG256 FG484 System Gates 60,000 200,000 500,000 Tiles (D-flip-flops) 1,536 4,608 11,520 8 8 24 A2F060 A2F200 A2F500 RAM Blocks (4,608 bits) Microcontroller Subsystem (MSS) TQ144 CS288 FG256 PQ208 CS288 FG256 FG484 PQ208 CS288 FG256 FG484 Flash (Kbytes) 128 256 512 SRAM (Kbytes) 16 64 64 Cortex-M3 processor with MPU Yes Yes Yes 10/100 Ethernet MAC No Yes Yes External Memory Controller (EMC) – DMA I2C SPI 26-/16-bit address/data 26-bit address,16-bit data – 26-/16-bit address/data 8 Ch 8 Ch 8 Ch 2 2 2 1 2 1 2 1 2 16550 UART 2 2 2 32-Bit Timer 2 2 2 PLL 1 1 32 KHz Low Power Oscillator 1 1 1 100 MHz On-Chip RC Oscillator 1 1 1 Main Oscillator (32 KHz to 20 MHz) 1 1 1 A2F060 A2F200 A2F500 Programmable Analog 1 2 1 2 TQ144 CS288 FG256 PQ208 CS288 FG256 FG484 PQ208 CS288 FG256 FG484 ADCs (8-/10-/12-bit SAR) 1 2 2 3 DACs (8-/16-/24-bit sigma-delta) 1 2 2 3 Signal Conditioning Blocks (SCBs) 1 4 4 5 Comparator* 2 8 8 10 Current Monitors* 1 4 4 5 Temperature Monitors* 1 4 4 5 Bipolar High Voltage Monitors* 2 8 8 10 Note: *These functions share I/O pins and may not all be available at the same time. See the "Analog Front-End Overview" section in the SmartFusion Programmable Analog User’s Guide for details. II R evis i o n 10 SmartFusion Customizable System-on-Chip (cSoC) Package I/Os: MSS + FPGA I/Os A2F0601 Device Package A2F2002 A2F5002 TQ144 CS288 FG256 PQ208 CS288 FG256 FG484 PQ208 CS288 FG256 FG484 Direct Analog Inputs 11 11 11 8 8 8 8 8 8 8 12 Shared Analog Inputs 4 4 4 16 16 16 16 16 16 16 20 Total Analog Inputs 15 15 15 24 24 24 24 24 24 24 32 Analog Outputs 1 1 1 1 2 2 2 1 2 2 3 22 31 25 41 22 31 25 41 6 78 66 128 135 117 204 3,4 5 21 MSS I/Os 28 5 26 5 FPGA I/Os 6 33 68 66 66 78 66 94 66 Total I/Os 70 112 108 113 135 117 161 113 Notes: 1. There are no LVTTL capable direct inputs available on A2F060 devices. 2. These pins are shared between direct analog inputs to the ADCs and voltage/current/temperature monitors. 3. 16 MSS I/Os are multiplexed and can be used as FPGA I/Os, if not needed for MSS. These I/Os support Schmitt triggers and support only LVTTL and LVCMOS (1.5 / 1.8 / 2.5, 3.3 V) standards. 4. 9 MSS I/Os are primarily for 10/100 Ethernet MAC and are also multiplexed and can be used as FPGA I/Os if Ethernet MAC is not used in a design. These I/Os support Schmitt triggers and support only LVTTL and LVCMOS (1.5 / 1.8 / 2.5, 3.3 V standards. 5. 10/100 Ethernet MAC is not available on A2F060. 6. EMC is not available on the A2F500 PQ208 and A2F060 TQ144 package. Table 1 • SmartFusion cSoC Package Sizes Dimensions Package FG256 FG484 28 × 28 17 × 17 23 × 23 400 784 289 529 Pitch (mm) 0.5 0.5 1.0 1.0 Height (mm) 1.40 3.40 1.60 2.23 Length × Width (mm\mm) Nominal Area (mm2) TQ144 PQ208 20 × 20 CS288 SmartFusion cSoC Device Status Device Status A2F060 Preliminary: CS288, FG256, TQ144 A2F200 Production: CS288, FG256, FG484, PQ208 A2F500 Production: CS288, FG256, FG484, PQ208 Revision 10 III SmartFusion Customizable System-on-Chip (cSoC) SmartFusion cSoC Block Diagram Cortex™-M3 Supervisor PLL OSC RC + JTAG NVIC PPB SysReg SysTick Microcontroller Subsystem ENVM WDT 32 KHz RTC 3V SWD Programmable Analog MPU – SPI 1 APB UART 1 EFROM I2C 1 IAP FPGA Fabric ESRAM S D I APB SPI 2 Timer1 UART 2 Timer2 I2C 2 AHB Bus Matrix PDMA APB EMC 10/100 EMAC SCB Temp. Mon. Volt Mon. (ABPS) Curr. Mon. Comparator Analog Compute Engine DAC (SDD) ADC Volt Mon. (ABPS) Curr. Mon. Comparator ADC Post Processing Engine ........ DAC (SDD) SRAM Legend: SDD – Sigma-delta DAC SCB – Signal conditioning block PDMA – Peripheral DMA IAP – In-application programming ABPS – Active bipolar prescaler WDT – Watchdog Timer SWD – Serial Wire Debug IV VersaTiles ............ SCB Temp. Mon. ............ .... Sample Sequencing Engine R evis i o n 10 SRAM SRAM ........ SRAM SRAM SRAM SmartFusion Customizable System-on-Chip (cSoC) SmartFusion cSoC System Architecture Bank 0 Bank 5 Bank 1 Embedded FlashROM (eFROM) ISP AES Decryption Charge Pumps Embedded NVM (eNVM) Bank 4 Embedded SRAM (eSRAM) SCB SCB ADC and DAC ADC and DAC SCB Bank 2 Cortex-M3 Microcontroller Subsystem (MSS) SCB Bank 3 Osc. CCC PLL/CCC MSS FPGA Analog Note: Architecture for A2F200 Revision 10 V SmartFusion Customizable System-on-Chip (cSoC) Product Ordering Codes A2F200 F M3 _ FG 1 484 G Y I Application (junction temperature range) Blank = Commercial (0 to +85°C) I = Industrial (–40 to +100°C) ES = Engineering Silicon (room temperature only) Security Feature* Y = Device Includes License to Implement IP Based on the Cryptography Research, Inc. (CRI) Patent Portfolio Blank = Device Does Not Include License to Implement IP Based on the Cryptography Research, Inc. (CRI) Patent Portfolio Package Lead Count 208 256 288 484 Lead-Free Packaging Options Blank = Standard Packaging G = RoHS-Compliant (green) Packaging Package Type TQ = Thin Quad Flat Pack (0.5 mm pitch) PQ = Plastic Quad Flat Pack (0.5 mm pitch) CS = Chip Scale Package (0.5 mm pitch) FG = Fine Pitch Ball Grid Array (1.0 mm pitch) Speed Grade Blank = 80 MHz MSS Speed; FPGA Fabric at Standard Speed –1 = 100 MHz MSS Speed; FPGA Fabric 15% Faster than Standard eNVM Size A = B = C = D = E = F = CPU Type G = M3 = Cortex-M3 8 Kbytes 16 Kbytes 32 Kbytes 64 Kbytes 128 Kbytes 256 Kbytes 512 Kbytes Currently only the following eNVM sizes are available per device: A2F500M3 – G A2F200M3 – F A2F060M3 – E Part Number SmartFusion Devices A2F060 = 60,000 System Gates A2F200 = 200,000 System Gates A2F500 = 500,000 System Gates Note: *Most devices in the SmartFusion cSoC family can be ordered with the Y suffix. Devices with a package size greater or equal to 5x5 mm are supported. Contact your local Microsemi SoC Products Group sales representative for more information. Temperature Grade Offerings SmartFusion cSoC A2F060 A2F200 A2F500 TQ144 C, I – – PQ208 – C, I C, I CS288 C, I C, I C, I FG256 C, I C, I C, I FG484 – C, I C, I Notes: 1. C = Commercial Temperature Range: 0°C to 85°C Junction 2. I = Industrial Temperature Range: –40°C to 100°C Junction VI R evis i o n 10 SmartFusion Customizable System-on-Chip (cSoC) Table of Contents SmartFusion Family Overview Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-1 General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-1 SmartFusion DC and Switching Characteristics General Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-1 Calculating Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-10 User I/O Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-19 VersaTile Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-55 Global Resource Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-59 RC Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-61 Main and Lower Power Crystal Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-62 Clock Conditioning Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-63 FPGA Fabric SRAM and FIFO Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-65 Embedded Nonvolatile Memory Block (eNVM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-75 Embedded FlashROM (eFROM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-76 JTAG 1532 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-76 Programmable Analog Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-77 Serial Peripheral Interface (SPI) Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-89 Inter-Integrated Circuit (I2C) Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-91 SmartFusion Development Tools Types of Design Tools . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SmartFusion Ecosystem . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Middleware . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-1 3-3 3-5 3-6 SmartFusion Programming In-System Programming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . In-Application Programming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Typical Programming and Erase Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-7 4-8 4-9 4-9 Pin Descriptions Supply Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-1 User-Defined Supply Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-5 Global I/O Naming Conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-6 User Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-6 Special Function Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-8 JTAG Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-10 Microcontroller Subsystem (MSS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-12 Analog Front-End (AFE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-14 Analog Front-End Pin-Level Function Multiplexing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-16 TQ144 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-18 CS288 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-22 PQ208 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-32 FG256 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-39 Revision 10 Table of Contents FG484 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-48 Datasheet Information List of Changes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-1 Datasheet Categories . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-13 Microsemi SoC Products Group Safety Critical, Life Support, and High-Reliability Applications Policy . . . . . . . . . 6-13 R ev i si o n 1 0 1 – SmartFusion Family Overview Introduction The SmartFusion® family of cSoCs builds on the technology first introduced with the Fusion mixed signal FPGAs. SmartFusion cSoCs are made possible by integrating FPGA technology with programmable high-performance analog and hardened ARM Cortex-M3 microcontroller blocks on a flash semiconductor process. The SmartFusion cSoC takes its name from the fact that these three discrete technologies are integrated on a single chip, enabling the lowest cost of ownership and smallest footprint solution to you. General Description Microcontroller Subsystem (MSS) The MSS is composed of a 100 MHz Cortex-M3 processor and integrated peripherals, which are interconnected via a multi-layer AHB bus matrix (ABM). This matrix allows the Cortex-M3 processor, FPGA fabric master, Ethernet message authentication controller (MAC), when available, and peripheral DMA (PDMA) controller to act as masters to the integrated peripherals, FPGA fabric, embedded nonvolatile memory (eNVM), embedded synchronous RAM (eSRAM), external memory controller (EMC), and analog compute engine (ACE) blocks. SmartFusion cSoCs of different densities offer various sets of integrated peripherals. Available peripherals include SPI, I2C, and UART serial ports, embedded FlashROM (EFROM), 10/100 Ethernet MAC, timers, phase-locked loops (PLLs), oscillators, real-time counters (RTC), and peripheral DMA controller (PDMA). Programmable Analog Analog Front-End (AFE) SmartFusion cSoCs offer an enhanced analog front-end compared to Fusion devices. The successive approximation register analog-to-digital converters (SAR ADC) are similar to those found on Fusion devices. SmartFusion cSoC also adds first order sigma-delta digital-to-analog converters (SDD DAC). SmartFusion cSoCs can handle multiple analog signals simultaneously with its signal conditioning blocks (SCBs). SCBs are made of a combination of active bipolar prescalers (ABPS), comparators, current monitors and temperature monitors. ABPS modules allow larger bipolar voltages to be fed to the ADC. Current monitors take the voltage across an external sense resistor and convert it to a voltage suitable for the ADC input range. Similarly, the temperature monitor reads the current through an external PNjunction (diode or transistor) and converts it internally for the ADC. The SCB also includes comparators to monitor fast signal thresholds without using the ADC. The output of the comparators can be fed to the analog compute engine or the ADC. Analog Compute Engine (ACE) The mixed signal blocks found in SmartFusion cSoCs are controlled and connected to the rest of the system via a dedicated processor called the analog compute engine (ACE). The role of the ACE is to offload control of the analog blocks from the Cortex-M3, thus offering faster throughput or better power consumption compared to a system where the main processor is in charge of monitoring the analog resources. The ACE is built to handle sampling, sequencing, and post-processing of the ADCs, DACs, and SCBs. R ev i si o n 1 0 1 -1 SmartFusion Family Overview ProASIC3 FPGA Fabric The SmartFusion cSoC family, based on the proven, low power, firm-error immune ProASIC®3 flash FPGA architecture, benefits from the advantages only flash-based devices offer: Reduced Cost of Ownership Advantages to the designer extend beyond low unit cost, high performance, and ease of use. Flashbased SmartFusion cSoCs are Instant On and do not need to be loaded from an external boot PROM at each power-up. On-board security mechanisms prevent access to the programming information and enable secure remote updates of the FPGA logic. Designers can perform secure remote in-system programming (ISP) to support future design iterations and critical field upgrades, with confidence that valuable IP cannot be compromised or copied. Secure ISP can be performed using the industry standard AES algorithm with MAC data authentication on the device. Low Power Flash-based SmartFusion cSoCs exhibit power characteristics similar to those of an ASIC, making them an ideal choice for power-sensitive applications. With SmartFusion cSoCs, there is no power-on current and no high current transition, both of which are common with SRAM-based FPGAs. SmartFusion cSoCs also have low dynamic power consumption and support very low power timekeeping mode, offering further power savings. Security As the nonvolatile, flash-based SmartFusion cSoC family requires no boot PROM, there is no vulnerable external bitstream. SmartFusion cSoCs incorporate FlashLock®, which provides a unique combination of reprogrammability and design security without external overhead, advantages that only a device with nonvolatile flash programming can offer. SmartFusion cSoCs utilize a 128-bit flash-based key lock and a separate AES key to provide security for programmed IP and configuration data. The FlashROM data in Fusion devices can also be encrypted prior to loading. Additionally, the flash memory blocks can be programmed during runtime using the AES128 block cipher encryption standard (FIPS Publication 192). SmartFusion cSoCs with AES-based security are designed to provide protection for remote field updates over public networks, such as the Internet, and help to ensure that valuable IP remains out of the hands of system overbuilders, system cloners, and IP thieves. As an additional security measure, the FPGA configuration data of a programmed Fusion device cannot be read back, although secure design verification is possible. During design, the user controls and defines both internal and external access to the flash memory blocks. Security, built into the FPGA fabric, is an inherent component of the SmartFusion cSoC family. The flash cells are located beneath seven metal layers, and many device design and layout techniques have been used to make invasive attacks extremely difficult. SmartFusion cSoCs, with FlashLock and AES security, are unique in being highly resistant to both invasive and noninvasive attacks. Your valuable IP is protected with industry standard security measures, making remote ISP feasible. A SmartFusion cSoC provides the highest security available for programmable logic designs. Single Chip Flash-based FPGAs store their configuration information in on-chip flash cells. Once programmed, the configuration data is an inherent part of the FPGA structure, and no external configuration data needs to be loaded at system power-up (unlike SRAM-based FPGAs). Therefore, flash-based SmartFusion cSoCs do not require system configuration components such as electrically erasable programmable read-only memories (EEPROMs) or microcontrollers to load device configuration data during power-up. This reduces bill-of-materials costs and PCB area, and increases system security and reliability. Instant On Flash-based SmartFusion cSoCs are Instant On. Instant On SmartFusion cSoCs greatly simplify total system design and reduce total system cost by eliminating the need for complex programmable logic devices (CPLDs). SmartFusion Instant On clocking (PLLs) replace off-chip clocking resources. In addition, glitches and brownouts in system power will not corrupt the SmartFusion flash configuration. Unlike SRAM-based FPGAs, the device will not have to be reloaded when system power is restored. This enables reduction or complete removal of expensive voltage monitor and brownout detection 1- 2 R ev isio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) devices from the PCB design. Flash-based SmartFusion cSoCs simplify total system design and reduce cost and design risk, while increasing system reliability. Immunity to Firm Errors Firm errors occur most commonly when high-energy neutrons, generated in the atmosphere, strike a configuration cell of an SRAM FPGA. The energy of the collision can change the state of the configuration cell and thus change the logic, routing, or I/O configuration behavior in an unpredictable way. Another source of radiation-induced firm errors is alpha particles. For alpha radiation to cause a soft or firm error, its source must be in very close proximity to the affected circuit. The alpha source must be in the package molding compound or in the die itself. While low-alpha molding compounds are being used increasingly, this helps reduce but does not entirely eliminate alpha-induced firm errors. Firm errors are impossible to prevent in SRAM FPGAs. The consequence of this type of error can be a complete system failure. Firm errors do not occur in SmartFusion cSoCs. Once it is programmed, the flash cell configuration element of SmartFusion cSoCs cannot be altered by high energy neutrons and is therefore immune to errors from them. Recoverable (or soft) errors occur in the user data SRAMs of all FPGA devices. These can easily be mitigated by using error detection and correction (EDAC) circuitry built into the FPGA fabric. Specifying I/O States During Programming You can modify the I/O states during programming in FlashPro. In FlashPro, this feature is supported for PDB files generated from Designer v8.5 or greater. See the FlashPro User’s Guide for more information. Note: PDB files generated from Designer v8.1 to Designer v8.4 (including all service packs) have limited display of Pin Numbers only. The I/Os are controlled by the JTAG Boundary Scan register during programming, except for the analog pins (AC, AT and AV). The Boundary Scan register of the AG pin can be used to enable/disable the gate driver in software v9.0. 1. Load a PDB from the FlashPro GUI. You must have a PDB loaded to modify the I/O states during programming. 2. From the FlashPro GUI, click PDB Configuration. A FlashPoint – Programming File Generator window appears. 3. Click the Specify I/O States During Programming button to display the Specify I/O States During Programming dialog box. 4. Sort the pins as desired by clicking any of the column headers to sort the entries by that header. Select the I/Os you wish to modify (Figure 1-1 on page 1-4). 5. Set the I/O Output State. You can set Basic I/O settings if you want to use the default I/O settings for your pins, or use Custom I/O settings to customize the settings for each pin. Basic I/O state settings: 1 – I/O is set to drive out logic High 0 – I/O is set to drive out logic Low Last Known State – I/O is set to the last value that was driven out prior to entering the programming mode, and then held at that value during programming Z -Tri-State: I/O is tristated R ev i si o n 1 0 1 -3 SmartFusion Family Overview Figure 1-1 • I/O States During Programming Window 6. Click OK to return to the FlashPoint – Programming File Generator window. Note: I/O States During programming are saved to the ADB and resulting programming files after completing programming file generation. 1- 4 R ev isio n 1 0 2 – SmartFusion DC and Switching Characteristics General Specifications Operating Conditions Stresses beyond the operating conditions listed in Table 2-1 may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings are stress ratings only; functional operation of the device at these or any other conditions beyond those listed under the Recommended Operating Conditions specified in Table 2-3 on page 2-3 is not implied. Table 2-1 • Absolute Maximum Ratings Symbol VCC Parameter DC core supply voltage Limits Units –0.3 to 1.65 V VJTAG JTAG DC voltage –0.3 to 3.75 V VPP Programming voltage –0.3 to 3.75 V VCCPLLx Analog power supply (PLL) –0.3 to 1.65 V VCCFPGAIOBx DC FPGA I/O buffer supply voltage –0.3 to 3.75 V VCCMSSIOBx DC MSS I/O buffer supply voltage –0.3 to 3.75 V VI I/O input voltage –0.3 V to 3.6 V V (when I/O hot insertion mode is enabled) –0.3 V to (VCCxxxxIOBx + 1 V) or 3.6 V, whichever voltage is lower (when I/O hotinsertion mode is disabled) VCC33A Analog clean 3.3 V supply to the analog circuitry –0.3 to 3.75 V VCC33ADCx Analog 3.3 V supply to ADC –0.3 to 3.75 V VCC33AP Analog clean 3.3 V supply to the charge pump –0.3 to 3.75 V VCC33SDDx Analog 3.3 V supply to the sigma-delta DAC –0.3 to 3.75 V VAREFx Voltage reference for ADC 1.0 to 3.75 V VCCRCOSC Analog supply to the integrated RC oscillator –0.3 to 3.75 V VDDBAT External battery supply –0.3 to 3.75 V VCCMAINXTAL Analog supply to the main crystal oscillator –0.3 to 3.75 V VCCLPXTAL Analog supply to the low power 32 kHz crystal oscillator –0.3 to 3.75 V VCCENVM Embedded nonvolatile memory supply –0.3 to 1.65 V VCCESRAM Embedded SRAM supply –0.3 to 1.65 V VCC15A Analog 1.5 V supply to the analog circuitry –0.3 to 1.65 V VCC15ADCx Analog 1.5 V supply to the ADC –0.3 to 1.65 V TSTG1 Storage temperature –65 to +150 °C TJ Junction temperature 125 °C 1 Notes: 1. For flash programming and retention maximum limits, refer to Table 2-4 on page 2-4. For recommended operating conditions, refer to Table 2-3 on page 2-3. 2. The device should be operated within the limits specified by the datasheet. During transitions, the input signal may undershoot or overshoot according to the limits shown in Table 2-5 on page 2-4. R ev i si o n 1 0 2 -1 SmartFusion DC and Switching Characteristics Table 2-2 • Analog Maximum Ratings Parameter Conditions Min. Max. Units –11.5 14.4 V –11 14 V GDEC[1:0] = 01 (±10.24 V range) –11.5 12 V GDEC[1:0] = 10 (±5.12 V range) –6 6 V GDEC[1:0] = 11 (±2.56 V range) –3 3 V Absolute maximum –0.3 14.4 V Recommended –0.3 14 V –0.3 3 V TMB_DI_ON = 1 (direct ADC in) –0.3 3 V TMB_DI_ON = 0 (ADC isolated) –0.3 3 V –0.3 3 V –0.3 3.6 V ABPS[n] pad voltage (relative to ground) GDEC[1:0] = 00 (±15.36 V range) Absolute maximum Recommended CM[n] pad voltage relative to ground) CMB_DI_ON = 0 (ADC isolated) COMP_EN = 0 (comparator off, for the associated even-numbered comparator) CMB_DI_ON = 0 (ADC isolated) COMP_EN = 1 (comparator on) TM[n] pad voltage (relative to ground) COMP_EN = 1(comparator on) TMB_DI_ON = 1 (direct ADC in) ADC[n] pad voltage (relative to ground) 2- 2 R ev isio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) Table 2-3 • Recommended Operating Conditions5,6 Parameter1 Symbol TJ VCC Commercial Industrial Units 0 to +85 –40 to +100 °C 1.425 to 1.575 1.425 to 1.575 V 1.425 to 3.6 1.425 to 3.6 V 3.15 to 3.45 3.15 to 3.45 V 0 to 3.6 0 to 3.6 V 1.425 to 1.575 1.425 to 1.575 V 1.425 to 1.575 1.425 to 1.575 V 1.7 to 1.9 1.7 to 1.9 V 2.5 V DC supply voltage 2.3 to 2.7 2.3 to 2.7 V 3.3 V DC supply voltage 3.0 to 3.6 3.0 to 3.6 V 2.375 to 2.625 2.375 to 2.625 V 3.0 to 3.6 3.0 to 3.6 V Junction temperature 2 VJTAG VPP 1.5 V DC core supply voltage JTAG DC voltage Programming voltage Programming mode3 4 Operation VCCPLLx Analog power supply (PLL) VCCFPGAIOBx/ 1.5 V DC supply voltage VCCMSSIOBx5 1.8 V DC supply voltage LVDS differential I/O LVPECL differential I/O VCC33A6 Analog clean 3.3 V supply to the analog circuitry 3.15 to 3.45 3.15 to 3.45 V VCC33ADCx6 Analog 3.3 V supply to ADC 3.15 to 3.45 3.15 to 3.45 V VCC33AP6 Analog clean 3.3 V supply to the charge pump 3.15 to 3.45 3.15 to 3.45 V VCC33SDDx6 Analog 3.3 V supply to sigma-delta DAC 3.15 to 3.45 3.15 to 3.45 V VAREFx Voltage reference for ADC 2.527 to 3.3 2.527 to 3.3 V VCCRCOSC Analog supply to the integrated RC oscillator 3.15 to 3.45 3.15 to 3.45 V VDDBAT External battery supply 2.7 to 3.63 2.7 to 3.63 V VCCMAINXTAL6 Analog supply to the main crystal oscillator 3.15 to 3.45 3.15 to 3.45 V VCCLPXTAL6 Analog supply to the low power 32 KHz crystal oscillator 3.15 to 3.45 3.15 to 3.45 V VCCENVM Embedded nonvolatile memory supply 1.425 to 1.575 1.425 to 1.575 V VCCESRAM Embedded SRAM supply 1.425 to 1.575 1.425 to 1.575 V VCC15A2 Analog 1.5 V supply to the analog circuitry 1.425 to 1.575 1.425 to 1.575 V VCC15ADCx2 Analog 1.5 V supply to the ADC 1.425 to 1.575 1.425 to 1.575 V Notes: 1. All parameters representing voltages are measured with respect to GND unless otherwise specified. 2. The following 1.5 V supplies should be connected together while following proper noise filtering practices: VCC, VCC15A, and VCC15ADCx. 3. The Programming temperature range supported is Tambient = 0°C to 85°C. 4. VPP can be left floating during operation (not programming mode). 5. The ranges given here are for power supplies only. The recommended input voltage ranges specific to each I/O standard are given in Table 2-19 on page 2-23. VCCxxxxIOBx should be at the same voltage within a given I/O bank. 6. The following 3.3 V supplies should be connected together while following proper noise filtering practices: VCC33A, VCC33ADCx, VCC33AP, VCC33SDDx, VCCMAINXTAL, and VCCLPXTAL. 7. R ev i si o n 1 0 2 -3 SmartFusion DC and Switching Characteristics Table 2-4 • FPGA and Embedded Flash Programming, Storage and Operating Limits Product Grade Commercial Industrial Storage Temperature Element Grade Programming Cycles Retention Min. TJ = 0°C FPGA/FlashROM 500 20 years Max. TJ = 85°C Embedded Flash < 1,000 20 years < 10,000 10 years < 15,000 5 years Min. TJ = –40°C FPGA/FlashROM 500 20 years Max. TJ = 100°C Embedded Flash < 1,000 20 years < 10,000 10 years < 15,000 5 years Table 2-5 • Overshoot and Undershoot Limits 1 VCCxxxxIOBx Average VCCxxxxIOBx–GND Overshoot or Undershoot Duration as a Percentage of Clock Cycle2 Maximum Overshoot/ Undershoot2 10% 1.4 V 5% 1.49 V 2.7 V or less 3V 10% 1.1 V 5% 1.19 V 3.3 V 10% 0.79 V 5% 0.88 V 3.6 V 10% 0.45 V 5% 0.54 V Notes: 1. Based on reliability requirements at 85°C. 2. The duration is allowed at one out of six clock cycles. If the overshoot/undershoot occurs at one out of two cycles, the maximum overshoot/undershoot has to be reduced by 0.15 V. 3. This table does not provide PCI overshoot/undershoot limits. Power Supply Sequencing Requirement SmartFusion cSoCs have an on-chip 1.5 V regulator, but usage of an external 1.5 V supply is also allowed while the on-chip regulator is disabled. In that case, the 3.3 V supplies (VCC33A, etc.) should be powered before 1.5 V (VCC, etc.) supplies. The 1.5 V supplies should be enabled only after 3.3 V supplies reach a value higher than 2.7 V. I/O Power-Up and Supply Voltage Thresholds for Power-On Reset (Commercial and Industrial) Sophisticated power-up management circuitry is designed into every SmartFusion cSoC. These circuits ensure easy transition from the powered-off state to the powered-up state of the device. In addition, the I/O will be in a known state through the power-up sequence. The basic principle is shown in Figure 2-1 on page 2-6. There are five regions to consider during power-up. SmartFusion I/Os are activated only if ALL of the following three conditions are met: 1. VCC and VCCxxxxIOBx are above the minimum specified trip points (Figure 2-1 on page 2-6). 2. VCCxxxxIOBx > VCC – 0.75 V (typical) 3. Chip is in the SoC Mode. 2- 4 R ev isio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) VCCxxxxIOBx Trip Point: Ramping up: 0.6 V < trip_point_up < 1.2 V Ramping down: 0.5 V < trip_point_down < 1.1 V VCC Trip Point: Ramping up: 0.6 V < trip_point_up < 1.1 V Ramping down: 0.5 V < trip_point_down < 1 V VCC and VCCxxxxIOBx ramp-up trip points are about 100 mV higher than ramp-down trip points. This specifically built-in hysteresis prevents undesirable power-up oscillations and current surges. Note the following: • By default, during programming I/Os become tristated and weakly pulled up to VCCxxxxIOBx. You can modify the I/O states during programming in FlashPro. For more details, refer to "Specifying I/O States During Programming" on page 1-3. • JTAG supply, PLL power supplies, and charge pump VPUMP supply have no influence on I/O behavior. PLL Behavior at Brownout Condition The Microsemi SoC Products Group recommends using monotonic power supplies or voltage regulators to ensure proper power-up behavior. Power ramp-up should be monotonic at least until VCC and VCCPLLx exceed brownout activation levels. The VCC activation level is specified as 1.1 V worst-case (see Figure 2-1 on page 2-6 for more details). When PLL power supply voltage and/or VCC levels drop below the VCC brownout levels (0.75 V ± 0.25 V), the PLL output lock signal goes low and/or the output clock is lost. Refer to the "Power-Up/-Down Behavior of Low Power Flash Devices" chapter of the ProASIC3 FPGA Fabric User’s Guide for information on clock and lock recovery. Internal Power-Up Activation Sequence 1. Core 2. Input buffers Output buffers, after 200 ns delay from input buffer activation R ev i si o n 1 0 2 -5 SmartFusion DC and Switching Characteristics VCC = VCCxxxxIOBx + VT where VT can be from 0.58 V to 0.9 V (typically 0.75 V) VCC VCC = 1.575 V Region 4: I/O buffers are ON. I/Os are functional (except differential but slower because Region 1: I/O Buffers are OFF VCCxxxxIOBx Region 5: I/O buffers are ON and power supplies are within specification. I/Os meet the entire datasheet and timer specifications for speed, VIH / VIL , VOH / VOL , etc. below specification. For the same reason, input buffers do not meet VIH / VIL levels, and output buffers do not meet VOH / VOL levels. VCC = 1.425 V Region 2: I/O buffers are ON. I/Os are functional (except differential inputs) but slower because VCCxxxxIOBx / VCC are below specification. For the same reason, input buffers do not meet VIH / VIL levels, and output buffers do not meet VOH / VOL levels. Activation trip point: Va = 0.85 V ± 0.25 V Deactivation trip point: Vd = 0.75 V ± 0.25 V Region 1: I/O buffers are OFF Activation trip point: Va = 0.9 V ± 0.3 V Deactivation trip point: Vd = 0.8 V ± 0.3 V Figure 2-1 • 2- 6 Region 3: I/O buffers are ON. I/Os are functional; I/O DC specifications are met, but I/Os are slower because the VCC is below specification. Min VCCxxxxIOBx datasheet specification voltage at a selected I/O standard; i.e., 1.425 V or 1.7 V or 2.3 V or 3.0 V I/O State as a Function of VCCxxxxIOBx and VCC Voltage Levels R ev isio n 1 0 VCCxxxxIOBx SmartFusion Customizable System-on-Chip (cSoC) Thermal Characteristics Introduction The temperature variable in the SoC Products Group Designer software refers to the junction temperature, not the ambient, case, or board temperatures. This is an important distinction because dynamic and static power consumption will cause the chip's junction temperature to be higher than the ambient, case, or board temperatures. EQ 1 through EQ 3 give the relationship between thermal resistance, temperature gradient, and power. T J – A JA = -----------------P EQ 1 TJ – TB JB = ------------------P EQ 2 JC TJ – TC = ------------------P EQ 3 where JA = Junction-to-air thermal resistance JB = Junction-to-board thermal resistance JC = Junction-to-case thermal resistance TJ = Junction temperature TA = Ambient temperature TB = Board temperature (measured 1.0 mm away from the package edge) TC = Case temperature P = Total power dissipated by the device Table 2-6 • Package Thermal Resistance JA Still Air 1.0 m/s 2.5 m/s JC JB Units A2F200M3F-FG256 33.7 30.0 28.3 9.3 24.8 °C/W A2F200M3F-FG484 21.8 18.2 16.7 7.7 16.8 °C/W A2F200M3F-CS288 26.6 20.2 18.1 7.3 9.4 °C/W A2F200M3F-PQG208I 38.5 34.6 33.1 0.7 31.6 °C/W Product R ev i si o n 1 0 2 -7 SmartFusion DC and Switching Characteristics Theta-JA Junction-to-ambient thermal resistance (JA) is determined under standard conditions specified by JEDEC (JESD-51), but it has little relevance in actual performance of the product. It should be used with caution but is useful for comparing the thermal performance of one package to another. A sample calculation showing the maximum power dissipation allowed for the A2F200-FG484 package under forced convection of 1.0 m/s and 75°C ambient temperature is as follows: T J(MAX) – T A(MAX) Maximum Power Allowed = -------------------------------------------- JA EQ 4 where JA = 19.00°C/W (taken from Table 2-6 on page 2-7). TA = 75.00°C 100.00°C – 75.00°C Maximum Power Allowed = ---------------------------------------------------- = 1.3 W 19.00°C/W EQ 5 The power consumption of a device can be calculated using the Microsemi SoC Products Group power calculator. The device's power consumption must be lower than the calculated maximum power dissipation by the package. If the power consumption is higher than the device's maximum allowable power dissipation, a heat sink can be attached on top of the case, or the airflow inside the system must be increased. Theta-JB Junction-to-board thermal resistance (JB) measures the ability of the package to dissipate heat from the surface of the chip to the PCB. As defined by the JEDEC (JESD-51) standard, the thermal resistance from junction to board uses an isothermal ring cold plate zone concept. The ring cold plate is simply a means to generate an isothermal boundary condition at the perimeter. The cold plate is mounted on a JEDEC standard board with a minimum distance of 5.0 mm away from the package edge. Theta-JC Junction-to-case thermal resistance (JC) measures the ability of a device to dissipate heat from the surface of the chip to the top or bottom surface of the package. It is applicable for packages used with external heat sinks. Constant temperature is applied to the surface in consideration and acts as a boundary condition. This only applies to situations where all or nearly all of the heat is dissipated through the surface in consideration. Calculation for Heat Sink For example, in a design implemented in an A2F200-FG484 package with 2.5 m/s airflow, the power consumption value using the power calculator is 3.00 W. The user-dependent Ta and Tj are given as follows: TJ = 100.00°C TA = 70.00°C From the datasheet: 2- 8 JA = 17.00°C/W JC = 8.28°C/W R ev isio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) TJ – TA 100°C – 70°C P = ------------------- = ------------------------------------ = 1.76 W JA 17.00 W EQ 6 The 1.76 W power is less than the required 3.00 W. The design therefore requires a heat sink, or the airflow where the device is mounted should be increased. The design's total junction-to-air thermal resistance requirement can be estimated by EQ 7: TJ – TA 100°C – 70°C JA(total) = ------------------- = ------------------------------------ = 10.00°C/W P 3.00 W EQ 7 Determining the heat sink's thermal performance proceeds as follows: JA(TOTAL) = JC + CS + SA EQ 8 where JA SA = 0.37°C/W = Thermal resistance of the interface material between the case and the heat sink, usually provided by the thermal interface manufacturer = Thermal resistance of the heat sink in °C/W SA = JA(TOTAL) – JC – CS EQ 9 SA = 13.33°C/W – 8.28°C/W – 0.37°C/W = 5.01°C/W A heat sink with a thermal resistance of 5.01°C/W or better should be used. Thermal resistance of heat sinks is a function of airflow. The heat sink performance can be significantly improved with increased airflow. Carefully estimating thermal resistance is important in the long-term reliability of an FPGA. Design engineers should always correlate the power consumption of the device with the maximum allowable power dissipation of the package selected for that device. Note: The junction-to-air and junction-to-board thermal resistances are based on JEDEC standard (JESD-51) and assumptions made in building the model. It may not be realized in actual application and therefore should be used with a degree of caution. Junction-to-case thermal resistance assumes that all power is dissipated through the case. Temperature and Voltage Derating Factors Table 2-7 • Temperature and Voltage Derating Factors for Timing Delays (normalized to TJ = 85°C, worst-case VCC = 1.425 V) Array Voltage VCC (V) Junction Temperature (°C) –40°C 0°C 25°C 70°C 85°C 100°C 1.425 0.86 0.91 0.93 0.98 1.00 1.02 1.500 0.81 0.86 0.88 0.93 0.95 0.96 1.575 0.78 0.83 0.85 0.90 0.91 0.93 R ev i si o n 1 0 2 -9 SmartFusion DC and Switching Characteristics Calculating Power Dissipation Quiescent Supply Current 3.3 V 0V 0V 0V Off MAINXTAL (enable/disable) VCCRCOSC 0V LPXTAL (enable/disable) VDDBAT 0V eNVM (reset/off) VCC / VCC15A / VCC15ADCx VCCPLLx, VCCENVM, VCCESRAM 0V VPP VCC33A / VCC33ADCx VCC33AP / VCC33SDDx VCCMAINXTAL / VCCLPXTAL Time Keeping mode VJTAG Modes and Power Supplies VCCxxxxIOBx VCCFPGAIOBx VCCMSSIOBx Table 2-8 • Power Supplies Configuration Enable Disable Standby mode On* 3.3 V 1.5 V N/A 3.3 V N/A N/A Reset Enable Disable SoC mode On* 3.3 V 1.5 V N/A 3.3 V N/A N/A On Enable Enable Note: *On means proper voltage is applied. Refer to Table 2-3 on page 2-3 for recommended operating conditions. Table 2-9 • Quiescent Supply Current Characteristics A2F060 Parameter Modes A2F200 A2F500 1.5 V Domain 3.3 V Domain 1.5 V Domain 3.3 V Domain 1.5 V Domain 3.3 V Domain IDC1 SoC mode 3 mA 2 mA 7 mA 4 mA 16.5 mA 4 mA IDC2 Standby mode 3 mA 2 mA 7 mA 4 mA 16.5 mA 4 mA IDC3 Time Keeping mode N/A 10 µA N/A 10 µA N/A 10 µA Power per I/O Pin Table 2-10 • Summary of I/O Input Buffer Power (per pin) – Default I/O Software Settings Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins VCCFPGAIOBx (V) Static Power PDC7 (mW) Dynamic Power PAC9 (µW/MHz) 3.3 V LVTTL / 3.3 V LVCMOS 3.3 – 17.55 2.5 V LVCMOS 2.5 – 5.97 1.8 V LVCMOS 1.8 – 2.88 1.5 V LVCMOS (JESD8-11) 1.5 – 2.33 3.3 V PCI 3.3 – 19.21 3.3 V PCI-X 3.3 – 19.21 LVDS 2.5 2.26 0.82 LVPECL 3.3 5.72 1.16 Single-Ended Differential 2- 10 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) Table 2-11 • Summary of I/O Input Buffer Power (per pin) – Default I/O Software Settings Applicable to MSS I/O Banks VCCMSSIOBx (V) Static Power PDC7 (mW) Dynamic Power PAC9 (µW/MHz) 3.3 V LVTTL / 3.3 V LVCMOS 3.3 – 17.21 3.3 V LVCMOS / 3.3 V LVCMOS – Schmitt trigger 3.3 – 20.00 2.5 V LVCMOS 2.5 – 5.55 2.5 V LVCMOS – Schmitt trigger 2.5 – 7.03 1.8 V LVCMOS 1.8 – 2.61 1.8 V LVCMOS – Schmitt trigger 1.8 – 2.72 1.5 V LVCMOS (JESD8-11) 1.5 – 1.98 1.5 V LVCMOS (JESD8-11) – Schmitt trigger 1.5 – 1.93 Single-Ended Table 2-12 • Summary of I/O Output Buffer Power (per pin) – Default I/O Software Settings* Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins CLOAD (pF) VCCFPGAIOBx (V) Static Power PDC8 (mW) Dynamic Power PAC10 (µW/MHz) 3.3 V LVTTL / 3.3 V LVCMOS 35 3.3 – 475.66 2.5 V LVCMOS 35 2.5 – 270.50 1.8 V LVCMOS 35 1.8 – 152.17 1.5 V LVCMOS (JESD8-11) 35 1.5 – 104.44 3.3 V PCI 10 3.3 – 202.69 3.3 V PCI-X 10 3.3 – 202.69 LVDS – 2.5 7.74 88.26 LVPECL – 3.3 19.54 164.99 Single-Ended Differential Note: *Dynamic power consumption is given for standard load and software default drive strength and output slew. Table 2-13 • Summary of I/O Output Buffer Power (per pin) – Default I/O Software Settings Applicable to MSS I/O Banks CLOAD (pF) VCCMSSIOBx (V) Static Power PDC8 (mW)2 Dynamic Power PAC10 (µW/MHz)3 3.3 V LVTTL / 3.3 V LVCMOS 10 3.3 – 155.65 2.5 V LVCMOS 10 2.5 – 88.23 1.8 V LVCMOS 10 1.8 – 45.03 1.5 V LVCMOS (JESD8-11) 10 1.5 – 31.01 Single-Ended R ev i si o n 1 0 2- 11 SmartFusion DC and Switching Characteristics Power Consumption of Various Internal Resources Table 2-14 • Different Components Contributing to Dynamic Power Consumption in SmartFusion cSoCs Power Supply Parameter Definition Name Device Domain A2F060 A2F200 A2F500 Units PAC1 Clock contribution of a Global Rib VCC 1.5 V 3.39 3.40 5.05 µW/MHz PAC2 Clock contribution of a Global Spine VCC 1.5 V 1.14 1.83 2.50 µW/MHz PAC3 Clock contribution of a VersaTile row VCC 1.5 V 1.15 1.15 1.15 µW/MHz PAC4 Clock contribution of a VersaTile used as a sequential module VCC 1.5 V 0.12 0.12 0.12 µW/MHz PAC5 First contribution of a VersaTile used as a sequential module VCC 1.5 V 0.07 0.07 0.07 µW/MHz PAC6 Second contribution of a VersaTile used as a sequential module VCC 1.5 V 0.29 0.29 0.29 µW/MHz PAC7 Contribution of a VersaTile used as a combinatorial module VCC 1.5 V 0.29 0.29 0.29 µW/MHz PAC8 Average contribution of a routing net VCC 1.5 V 1.04 0.79 0.79 µW/MHz PAC9 Contribution of an I/O input pin VCCxxxxIOBx/VCC See Table 2-10 and Table 2-11 on page 2-11 (standard dependent) PAC10 Contribution of an I/O output pin VCCxxxxIOBx/VCC See Table 2-12 and Table 2-13 on page 2-11 (standard dependent) PAC11 Average contribution of a RAM block during a read operation VCC 1.5 V 25.00 µW/MHz PAC12 Average contribution of a RAM block during a write operation VCC 1.5 V 30.00 µW/MHz PAC13 Dynamic Contribution for PLL VCC 1.5 V 2.60 µW/MHz PAC15 Contribution of NVM block during a read operation (F < 33MHz) VCC 1.5 V 358.00 µW/MHz PAC16 1st contribution of NVM block during a read operation (F > 33MHz) VCC 1.5 V 12.88 mW PAC17 2nd contribution of NVM block during a read operation (F > 33MHz) VCC 1.5 V 4.80 µW/MHz PAC18 Main Crystal Oscillator contribution VCCMAINXTAL 3.3 V 1.98 mW PAC19a RC Oscillator contribution VCCRCOSC 3.3 V 3.30 mW PAC19b RC Oscillator contribution VCC 1.5 V 3.00 mW PAC20a Analog Block Dynamic Contribution of the ADC Power VCC33ADCx 3.3 V 8.25 mW PAC20b Analog Block Dynamic Contribution of the ADC Power VCC15ADCx 1.5 V 3.00 mW PAC21 Low Power contribution Oscillator VCCLPXTAL 3.3 V 33.00 µW PAC22 MSS Dynamic Power Contribution – Running Drysthone at 100MHz1 VCC 1.5 V 67.50 mW PAC23 Temperature Monitor Power Contribution See Table 2-94 on page 2-78 – 1.23 mW 2- 12 Crystal R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) Table 2-14 • Different Components Contributing to Dynamic Power Consumption in SmartFusion cSoCs Power Supply Parameter Device Definition Name Domain A2F060 A2F200 A2F500 Units PAC24 Current Monitor Power Contribution See Table 2-93 on page 2-77 – 1.03 mW PAC25 ABPS Power Contribution See Table 2-97 on page 2-82 – 0.70 mW PAC26 Sigma-Delta DAC Power Contribution2 See Table 2-99 on page 2-85 – 0.58 mW PAC27 Comparator Power Contribution See Table 2-98 on page 2-84 – 1.02 mW PAC28 Voltage Regulator Power Contribution3 See Table 2-100 on page 2-87 – 36.30 mW Notes: 1. For a different use of MSS peripherals and resources, refer to SmartPower. 2. Assumes Input = Half Scale Operation mode. 3. Assumes 100 mA load on 1.5 V domain. Table 2-15 • Different Components Contributing to the Static Power Consumption in SmartFusion cSoCs Power Supply Parameter Device Definition Name PDC1 Core static power contribution in SoC mode VCC 1.5 V 11.10 23.70 37.95 mW PDC2 Device static power contribution in Standby Mode See Table 2-8 on page 2-10 – 11.10 23.70 37.95 mW PDC3 Device static power contribution in Time Keeping mode See Table 2-8 on page 2-10 3.3 V 33.00 33.00 33.00 µW PDC7 Static contribution per input pin VCCxxxxIOBx/VCC See Table 2-10 and Table 2-11 on page 2-11. (standard dependent contribution) PDC8 Static contribution per output pin VCCxxxxIOBx/VCC See Table 2-12 and Table 2-13 on page 2-11. (standard dependent contribution) PDC9 Static contribution per PLL VCC Domain A2F060 A2F200 A2F200 Units 1.5 V 2.55 2.55 2.55 mW Table 2-16 • eNVM Dynamic Power Consumption Parameter Description eNVM System eNVM array operating power Condition Idle Read operation PNVMCTRL Min. Typ. Max. Units 795 µA See Table 2-14 on page 2-12. Erase 900 µA Write 900 µA 20 µW/MHz eNVM controller operating power R ev i si o n 1 0 2- 13 SmartFusion DC and Switching Characteristics Power Calculation Methodology This section describes a simplified method to estimate power consumption of an application. For more accurate and detailed power estimations, use the SmartPower tool in the Libero SoC software. The power calculation methodology described below uses the following variables: • The number of PLLs/CCCs as well as the number and the frequency of each output clock generated • The number of combinatorial and sequential cells used in the design • The internal clock frequencies • The number and the standard of I/O pins used in the design • The number of RAM blocks used in the design • The number of eNVM blocks used in the design • The analog block used in the design, including the temperature monitor, current monitor, ABPS, sigma-delta DAC, comparator, low power crystal oscillator, RC oscillator and the main crystal oscillator • Toggle rates of I/O pins as well as VersaTiles—guidelines are provided in Table 2-17 on page 2-18. • Enable rates of output buffers—guidelines are provided for typical applications in Table 2-18 on page 2-18. • Read rate and write rate to the memory—guidelines are provided for typical applications in Table 2-18 on page 2-18. • Read rate to the eNVM blocks The calculation should be repeated for each clock domain defined in the design. Methodology Total Power Consumption—PTOTAL SoC Mode, Standby Mode, and Time Keeping Mode. PTOTAL = PSTAT + PDYN PSTAT is the total static power consumption. PDYN is the total dynamic power consumption. Total Static Power Consumption—PSTAT SoC Mode PSTAT = PDC1 + (NINPUTS * PDC7) + (NOUTPUTS * PDC8) + (NPLLS * PDC9) NINPUTS is the number of I/O input buffers used in the design. NOUTPUTS is the number of I/O output buffers used in the design. NPLLS is the number of PLLs available in the device. Standby Mode PSTAT = PDC2 Time Keeping Mode PSTAT = PDC3 Total Dynamic Power Consumption—PDYN SoC Mode PDYN = PCLOCK + PS-CELL + PC-CELL + PNET + PINPUTS + POUTPUTS + PMEMORY + PPLL + PeNVM + PXTL-OSC + PRC-OSC + PAB + PLPXTAL-OSC + PMSS 2- 14 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) Standby Mode PDYN = PRC-OSC + PLPXTAL-OSC Time Keeping Mode PDYN = PLPXTAL-OSC Global Clock Dynamic Contribution—PCLOCK SoC Mode PCLOCK = (PAC1 + NSPINE * PAC2 + NROW * PAC3 + NS-CELL * PAC4) * FCLK NSPINE is the number of global spines used in the user design—guidelines are provided in the "Device Architecture" chapter of the SmartFusion FPGA Fabric User's Guide. NROW is the number of VersaTile rows used in the design—guidelines are provided in the "Device Architecture" chapter of the SmartFusion FPGA Fabric User's Guide. FCLK is the global clock signal frequency. NS-CELL is the number of VersaTiles used as sequential modules in the design. Standby Mode and Time Keeping Mode PCLOCK = 0 W Sequential Cells Dynamic Contribution—PS-CELL SoC Mode PS-CELL = NS-CELL * (PAC5 + (1 / 2) * PAC6) * FCLK NS-CELL is the number of VersaTiles used as sequential modules in the design. When a multi-tile sequential cell is used, it should be accounted for as 1. 1 is the toggle rate of VersaTile outputs—guidelines are provided in Table 2-17 on page 2-18. FCLK is the global clock signal frequency. Standby Mode and Time Keeping Mode PS-CELL = 0 W Combinatorial Cells Dynamic Contribution—PC-CELL SoC Mode PC-CELL = NC-CELL* (1 / 2) * PAC7 * FCLK NC-CELL is the number of VersaTiles used as combinatorial modules in the design. 1 is the toggle rate of VersaTile outputs—guidelines are provided in Table 2-17 on page 2-18. FCLK is the global clock signal frequency. Standby Mode and Time Keeping Mode PC-CELL = 0 W Routing Net Dynamic Contribution—PNET SoC Mode PNET = (NS-CELL + NC-CELL) * (1 / 2) * PAC8 * FCLK NS-CELL is the number VersaTiles used as sequential modules in the design. NC-CELL is the number of VersaTiles used as combinatorial modules in the design. 1 is the toggle rate of VersaTile outputs—guidelines are provided in Table 2-17 on page 2-18. FCLK is the frequency of the clock driving the logic including these nets. R ev i si o n 1 0 2- 15 SmartFusion DC and Switching Characteristics Standby Mode and Time Keeping Mode PNET = 0 W I/O Input Buffer Dynamic Contribution—PINPUTS SoC Mode PINPUTS = NINPUTS * (2 / 2) * PAC9 * FCLK Where: NINPUTS is the number of I/O input buffers used in the design. 2 is the I/O buffer toggle rate—guidelines are provided in Table 2-17 on page 2-18. FCLK is the global clock signal frequency. Standby Mode and Time Keeping Mode PINPUTS = 0 W I/O Output Buffer Dynamic Contribution—POUTPUTS SoC Mode POUTPUTS = NOUTPUTS * (2 / 2) * 1 * PAC10 * FCLK Where: NOUTPUTS is the number of I/O output buffers used in the design. 2 is the I/O buffer toggle rate—guidelines are provided in Table 2-17 on page 2-18. 1 is the I/O buffer enable rate—guidelines are provided in Table 2-18 on page 2-18. FCLK is the global clock signal frequency. Standby Mode and Time Keeping Mode POUTPUTS = 0 W FPGA Fabric SRAM Dynamic Contribution—PMEMORY SoC Mode PMEMORY = (NBLOCKS * PAC11 * 2 * FREAD-CLOCK) + (NBLOCKS * PAC12 * 3 * FWRITE-CLOCK) Where: NBLOCKS is the number of RAM blocks used in the design. FREAD-CLOCK is the memory read clock frequency. 2 is the RAM enable rate for read operations—guidelines are provided in Table 2-18 on page 2-18. 3 the RAM enable rate for write operations—guidelines are provided in Table 2-18 on page 2-18. FWRITE-CLOCK is the memory write clock frequency. Standby Mode and Time Keeping Mode PMEMORY = 0 W PLL/CCC Dynamic Contribution—PPLL SoC Mode PPLL = PAC13 * FCLKOUT FCLKIN is the input clock frequency. FCLKOUT is the output clock frequency.1 Standby Mode and Time Keeping Mode 1.The PLL dynamic contribution depends on the input clock frequency, the number of output clock signals generated by the PLL, and the frequency of each output clock. If a PLL is used to generate more than one output clock, include each output clock in the formula output clock by adding its corresponding contribution (PAC14 * FCLKOUT product) to the total PLL contribution. 2- 16 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) PPLL = 0 W Embedded Nonvolatile Memory Dynamic Contribution—PeNVM SoC Mode The eNVM dynamic power consumption is a piecewise linear function of frequency. PeNVM = NeNVM-BLOCKS * 4 * PAC15 * FREAD-eNVM when FREAD-eNVM 33 MHz, PeNVM = NeNVM-BLOCKS * 4 *(PAC16 + PAC17 * FREAD-eNVM) when FREAD-eNVM > 33 MHz Where: NeNVM-BLOCKS is the number of eNVM blocks used in the design. 4 is the eNVM enable rate for read operations. Default is 0 (eNVM mainly in idle state). FREAD-eNVM is the eNVM read clock frequency. Standby Mode and Time Keeping Mode PeNVM = 0 W Main Crystal Oscillator Dynamic Contribution—PXTL-OSC SoC Mode PXTL-OSC = PAC18 Standby Mode PXTL-OSC = 0 W Time Keeping Mode PXTL-OSC = 0 W Low Power Oscillator Crystal Dynamic Contribution—PLPXTAL-OSC Operating, Standby, and Time Keeping Mode PLPXTAL-OSC = PAC21 RC Oscillator Dynamic Contribution—PRC-OSC SoC Mode PRC-OSC = PAC19A + PAC19B Standby Mode and Time Keeping Mode PRC-OSC = 0 W Analog System Dynamic Contribution—PAB SoC Mode PAB = PAC23 * NTM + PAC24 * NCM + PAC25 * NABPS + PAC26 * NSDD + PAC27 * NCOMP + PADC * NADC + PVR Where: NCM is the number of current monitor blocks NTM is the number of temperature monitor blocks NSDD is the number of sigma-delta DAC blocks NABPS is the number of ABPS blocks NADC is the number of ADC blocks NCOMP is the number of comparator blocks PVR= PAC28 PADC= PAC20A + PAC20B R ev i si o n 1 0 2- 17 SmartFusion DC and Switching Characteristics Microcontroller Subsystem Dynamic Contribution—PMSS SoC Mode PMSS = PAC22 Guidelines Toggle Rate Definition A toggle rate defines the frequency of a net or logic element relative to a clock. It is a percentage. If the toggle rate of a net is 100%, this means that the net switches at half the clock frequency. Below are some examples: • The average toggle rate of a shift register is 100%, as all flip-flop outputs toggle at half of the clock frequency. • The average toggle rate of an 8-bit counter is 25%: – Bit 0 (LSB) = 100% – Bit 1 = 50% – Bit 2 = 25% – … – Bit 7 (MSB) = 0.78125% – Average toggle rate = (100% + 50% + 25% + 12.5% + . . . 0.78125%) / 8. Enable Rate Definition Output enable rate is the average percentage of time during which tristate outputs are enabled. When non-tristate output buffers are used, the enable rate should be 100%. Table 2-17 • Toggle Rate Guidelines Recommended for Power Calculation Component 1 2 Definition Guideline Toggle rate of VersaTile outputs 10% I/O buffer toggle rate 10% Table 2-18 • Enable Rate Guidelines Recommended for Power Calculation Component 2- 18 Definition Guideline 1 I/O output buffer enable rate 2 FPGA fabric operations read 12.5% 3 FPGA fabric SRAM enable rate for write operations 12.5% 4 eNVM enable rate for read operations < 5% SRAM enable Toggle rate of the logic driving the output buffer rate R ev i sio n 1 0 for SmartFusion Customizable System-on-Chip (cSoC) User I/O Characteristics Timing Model I/O Module (Non-Registered) Combinational Cell Combinational Cell Y LVPECL (applicable to FPGA /O bank, EMC pin) Y tPD = 0.57 ns tPD = 0.49 ns tDP = 1.53 ns I/O Module (Non-Registered) Combinational Cell Y LVTTL Output drive strength = 12 mA High slew rate tDP = 2.81 ns (FPGA I/O Bank, EMC pin) tPD = 0.89 ns I/O Module (Non-Registered) Combinational Cell I/O Module (Registered) Y LVTTL Output drive strength = 8 mA High slew rate tDP = 3.87 ns (FPGA I/O Bank, EMC pin) tPY = 1.46 ns LVPECL (Applicable to FPGA I/O Bank, EMC pin) D tPD = 0.51 ns Q I/O Module (Non-Registered) Combinational Cell Y tICLKQ = 0.24 ns tISUD = 0.27 ns LVCMOS 1.5 V Output drive strength = 4 mA High slew rate tDP = 4.13 ns (FPGA I/O Bank, EMC pin) tPD = 0.48 ns Input LVTTL Clock Register Cell tPY = 0.81 ns (FPGA I/O Bank, EMC pin) D Combinational Cell Y Q I/O Module (Non-Registered) LVDS, BLVDS, M-LVDS (Applicable for FPGA I/O Bank, EMC pin) Figure 2-2 • D Q D tPD = 0.48 ns tCLKQ = 0.56 ns tSUD = 0.44 ns tPY = 1.55 ns I/O Module (Registered) Register Cell tCLKQ = 0.56 ns tSUD = 0.44 ns Q LVTTL 3.3 V Output drive strength = 12 mA High slew rate tDP = 2.81 ns (FPGA I/O Bank, EMC pin) tOCLKQ = 0.60 ns tOSUD = 0.32 ns Input LVTTL Clock Input LVTTL Clock tPY = 0.81 ns (FPGA I/O Bank, EMC pin) tPY = 0.81 ns (FPGA I/O Bank, EMC pin) Timing Model Operating Conditions: –1 Speed, Commercial Temperature Range (TJ = 85°C), Worst Case VCC = 1.425 V R ev i si o n 1 0 2- 19 SmartFusion DC and Switching Characteristics tPY tDIN D PAD Q DIN Y CLK tPY = MAX(tPY(R), tPY(F)) tDIN = MAX(tDIN(R), tDIN(F)) To Array I/O Interface VIH PAD Vtrip Vtrip VIL VCC 50% 50% Y GND tPY (R) tPY (F) VCC 50% DIN GND Figure 2-3 • 2- 20 50% tDOUT tDOUT (R) (F) Input Buffer Timing Model and Delays (example) R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) tDOUT tDP D Q D PAD DOUT Std Load CLK From Array tDP = MAX(tDP(R), tDP(F)) tDOUT = MAX(tDOUT(R), tDOUT(F)) I/O Interface tDOUT (R) D 50% tDOUT VCC (F) 50% 0V VCC DOUT 50% 50% 0V VOH Vtrip Vtrip PAD tDP (R) Figure 2-4 • VOL tDP (F) Output Buffer Model and Delays (example) R ev i si o n 1 0 2- 21 SmartFusion DC and Switching Characteristics tEOUT D Q CLK E tZL, tZH, tHZ, tLZ, tZLS, tZHS EOUT D Q PAD DOUT CLK D tEOUT = MAX(tEOUT(r), tEOUT(f)) I/O Interface VCC D VCC 50% tEOUT (F) 50% E tEOUT (R) VCC 50% EOUT 50% tZL PAD 50% tHZ Vtrip tZH VCCxxxxIOBx 90% VCCxxxxIOBx Vtrip VOL VCC D VCC E 50% EOUT PAD tEOUT (R) 2- 22 tEOUT (F) VCC 50% 50% 50% tZLS tZHS VOH Vtrip Figure 2-5 • 50% 50% tLZ Vtrip VOL Tristate Output Buffer Timing Model and Delays (example) R ev i sio n 1 0 10% VCCxxxxIOBx SmartFusion Customizable System-on-Chip (cSoC) Overview of I/O Performance Summary of I/O DC Input and Output Levels – Default I/O Software Settings Table 2-19 • Summary of Maximum and Minimum DC Input and Output Levels Applicable to Commercial Conditions—Software Default Settings Applicable to FPGA I/O Banks VIL VIH VOL VOH IOL1 IOH1 mA mA Drive Slew Min. Strgth. Rate V Max. V Min. V Max. V Max. V Min. V 3.3 V LVTTL / 12 mA High –0.3 3.3 V LVCMOS 0.8 2 3.6 0.4 2.4 0.7 1.7 I/O Standard 2.5 V LVCMOS 12 mA High –0.3 12 12 3.6 0.7 1.7 12 12 1.8 V LVCMOS 12 mA High –0.3 0.35 * 0.65* VCCxxxxIOBx VCCxxxxIOBx 3.6 0.45 VCCxxxxIOBx – 0.45 12 12 1.5 V LVCMOS 12 mA High –0.3 0.35 * 0.65* VCCxxxxIOBx VCCxxxxIOBx 3.6 0.25 * 0.75* VCCxxxxIOBx VCCxxxxIOBx 12 12 3.3 V PCI Per PCI specifications 3.3 V PCI-X Per PCI-X specifications Notes: 1. Currents are measured at 85°C junction temperature. 2. Output slew rate can be extracted by the IBIS Models. Table 2-20 • Summary of Maximum and Minimum DC Input and Output Levels Applicable to Commercial Conditions—Software Default Settings Applicable to MSS I/O Banks VIL I/O Standard Drive Slew Min. Strgth. Rate V VIH VOL VOH IOL1 IOH1 mA mA Max. V Min. V Max. V Max. V Min. V 3.3 V LVTTL / 8 mA 3.3 V LVCMOS High –0.3 0.8 2 3.6 0.4 2.4 8 8 2.5 V LVCMOS 8 mA High –0.3 0.7 1.7 3.6 0.7 1.7 8 8 1.8 V LVCMOS 4 mA High –0.3 0.35* VCCxxxxIOBx 0.65* VCCxxxxIOBx 3.6 0.45 VCCxxxxIOBx – 0.45 4 4 1.5 V LVCMOS 2 mA High –0.3 0.35* VCCxxxxIOBx 0.65* VCCxxxxIOBx 3.6 0.25* 0.75* VCCxxxxIOBx VCCxxxxIOBx 2 2 Notes: 1. Currents are measured at 85°C junction temperature. 2. Output slew rate can be extracted by the IBIS Models. R ev i si o n 1 0 2- 23 SmartFusion DC and Switching Characteristics Table 2-21 • Summary of Maximum and Minimum DC Input Levels Applicable to Commercial Conditions in all I/O Bank Types Commercial IIL IIH DC I/O Standards µA µA 3.3 V LVTTL / 3.3 V LVCMOS 15 15 2.5 V LVCMOS 15 15 1.8 V LVCMOS 15 15 1.5 V LVCMOS 15 15 3.3 V PCI 15 15 3.3 V PCI-X 15 15 Summary of I/O Timing Characteristics – Default I/O Software Settings Table 2-22 • Summary of AC Measuring Points Applicable to All I/O Bank Types Measuring Trip Point (Vtrip) Standard 3.3 V LVTTL / 3.3 V LVCMOS 1.4 V 2.5 V LVCMOS 1.2 V 1.8 V LVCMOS 0.90 V 1.5 V LVCMOS 0.75 V 3.3 V PCI 0.285 * VCCxxxxIOBx (RR) 0.615 * VCCxxxxIOBx (FF) 3.3 V PCI-X 0.285 * VCCxxxxIOBx (RR) 0.615 * VCCxxxxIOBx (FF) LVDS Cross point LVPECL Cross point Table 2-23 • I/O AC Parameter Definitions Parameter 2- 24 Parameter Definition tDP Data to pad delay through the output buffer tPY Pad to data delay through the input buffer tDOUT Data to output buffer delay through the I/O interface tEOUT Enable to output buffer tristate control delay through the I/O interface tDIN Input buffer to data delay through the I/O interface tHZ Enable to pad delay through the output buffer—High to Z tZH Enable to pad delay through the output buffer—Z to High tLZ Enable to pad delay through the output buffer—Low to Z tZL Enable to pad delay through the output buffer—Z to Low tZHS Enable to pad delay through the output buffer with delayed enable—Z to High tZLS Enable to pad delay through the output buffer with delayed enable—Z to Low R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) – 0.50 2.73 0.03 1.03 0.32 2.88 2.69 2.62 2.70 4.60 4.41 ns 1.8 V LVCMOS 12 mA High 35 – 0.50 2.81 0.03 0.95 0.32 2.87 2.38 2.92 3.18 4.58 4.10 ns 1.5 V LVCMOS 12 mA High 35 – 0.50 3.24 0.03 1.12 0.32 3.30 2.79 3.10 3.27 5.02 4.50 ns 10 251 0.50 2.11 0.03 0.68 0.32 2.15 1.57 2.55 2.82 3.87 3.28 ns 1 0.50 2.11 0.03 0.64 0.32 2.15 1.57 2.55 2.82 3.87 3.28 ns 3.3 V PCI 3.3 V PCI-X Per PCI spec High tPY (ns) Units 35 tZHS (ns) High tZLS (ns) 12 mA tHZ (ns) 2.5 V LVCMOS tLZ (ns) 0.50 2.81 0.03 0.81 0.32 2.86 2.23 2.55 2.82 4.58 3.94 ns tZH (ns) – tZL (ns) 35 tEOUT (ns) External Resistor () High tDIN (ns) Capacitive Load (pF) 12 mA tDP (ns) Slew Rate 3.3 V LVTTL / 3.3 V LVCMOS I/O Standard tDOUT (ns) Drive Strength Table 2-24 • Summary of I/O Timing Characteristics—Software Default Settings –1 Speed Grade, Worst Commercial-Case Conditions: TJ = 85°C, Worst Case VCC = 1.425 V, Worst-Case VCCxxxxIOBx (per standard) Applicable to FPGA I/O Banks, Assigned to EMC I/O Pins Per PCI-X spec High 10 25 LVDS 24 mA High – – 0.50 1.53 0.03 1.55 – – – – – – – ns LVPECL 24 mA High – – 0.50 1.46 0.03 1.46 – – – – – – – ns Notes: 1. Resistance is used to measure I/O propagation delays as defined in PCI specifications. See Figure 2-10 on page 2-39 for connectivity. This resistor is not required during normal operation. 2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values. tPY (ns) 1.92 0.07 0.78 1.09 0.18 1.96 1.55 1.83 2.04 ns 2.5 V LVCMOS 8 mA High 10 – 0.18 1.96 0.07 0.99 1.16 0.18 2.00 1.82 1.82 1.93 ns 1.8 V LVCMOS 4 mA High 10 – 0.18 2.31 0.07 0.91 1.37 0.18 2.35 2.27 1.84 1.87 ns 1.5 V LVCMOS 2 mA High 10 – 0.18 2.70 0.07 1.07 1.55 0.18 2.75 2.67 1.87 1.85 ns Units tDIN (ns) 0.18 tHZ (ns) tDP (ns) – tLZ (ns) tDOUT (ns) 10 tZH (ns) External Resistor High tZL (ns) Capacitive Load (pF) 8 mA tEO UT (ns) Slew Rate 3.3 V LVTTL / 3.3 V LVCMOS I/O Standard tPYS (ns) Drive Strength Table 2-25 • Summary of I/O Timing Characteristics—Software Default Settings –1 Speed Grade, Worst Commercial-Case Conditions: TJ = 85°C, Worst Case VCC = 1.425 V, Worst-Case VCCxxxxIOBx (per standard) Applicable to MSS I/O Banks Notes: 1. Resistance is used to measure I/O propagation delays as defined in PCI specifications. See Figure 2-10 on page 2-39 for connectivity. This resistor is not required during normal operation. 2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values. R ev i si o n 1 0 2- 25 SmartFusion DC and Switching Characteristics Detailed I/O DC Characteristics Table 2-26 • Input Capacitance Symbol Definition Conditions Min. Max. Units CIN Input capacitance VIN = 0, f = 1.0 MHz 8 pF CINCLK Input capacitance on the clock pin VIN = 0, f = 1.0 MHz 8 pF Table 2-27 • I/O Output Buffer Maximum Resistances1 Applicable to FPGA I/O Banks Standard 3.3 V LVTTL / 3.3 V LVCMOS 2.5 V LVCMOS 1.8 V LVCMOS 1.5 V LVCMOS 3.3 V PCI/PCI-X Drive Strength RPULL-DOWN ()2 RPULL-UP ()3 2 mA 100 300 4 mA 100 300 6 mA 50 150 8 mA 50 150 12 mA 25 75 16 mA 17 50 24 mA 11 33 2 mA 100 200 4 mA 100 200 6 mA 50 100 8 mA 50 100 12 mA 25 50 16 mA 20 40 24 mA 11 22 2 mA 200 225 4 mA 100 112 6 mA 50 56 8 mA 50 56 12 mA 20 22 16 mA 20 22 2 mA 200 224 4 mA 100 112 6 mA 67 75 8 mA 33 37 12 mA 33 37 Per PCI/PCI-X specification 25 75 Notes: 1. These maximum values are provided for information only. Minimum output buffer resistance values depend on VCCxxxxIOBx, drive strength selection, temperature, and process. For board design considerations and detailed output buffer resistances, use the corresponding IBIS models located on the Microsemi SoC Products Group website at http://www.microsemi.com/soc/download/ibis/default.aspx (also generated by the SoC Products Group Libero SoC toolset). 2. R(PULL-DOWN-MAX) = (VOLspec) / IOLspec 3. R(PULL-UP-MAX) = (VCCImax – VOHspec) / IOHspe c 2- 26 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) Table 2-28 • I/O Output Buffer Maximum Resistances1 Applicable to MSS I/O Banks Drive Strength RPULL-DOWN ()2 RPULL-UP ()3 3.3 V LVTTL / 3.3 V LVCMOS 8mA 50 150 2.5 V LVCMOS 8 mA 50 100 1.8 V LVCMOS 4 mA 100 112 1.5 V LVCMOS 2 mA 200 224 Standard Notes: 1. These maximum values are provided for informational reasons only. Minimum output buffer resistance values depend on VCCxxxxIOBx, drive strength selection, temperature, and process. For board design considerations and detailed output buffer resistances, use the corresponding IBIS models located on the SoC Products Group website at http://www.microsemi.com/soc/download/ibis/default.aspx. 2. R(PULL-DOWN-MAX) = (VOLspec) / IOLspec 3. R(PULL-UP-MAX) = (VCCImax – VOHspec) / IOHspe c Table 2-29 • I/O Weak Pull-Up/Pull-Down Resistances Minimum and Maximum Weak Pull-Up/Pull-Down Resistance Values R(WEAK PULL-UP)1 () R(WEAK PULL-DOWN)2 () VCCxxxxIOBx Min. Max. Min. Max. 3.3 V 10 k 45 k 10 k 45 k 2.5 V 11 k 55 k 12 k 74 k 1.8 V 18 k 70 k 17 k 110 k 1.5 V 19 k 90 k 19 k 140 k Notes: 1. R(WEAK PULL-UP-MAX) = (VCCImax – VOHspec) / I(WEAK PULL-UP-MIN) 2. R(WEAK PULL-DOWN-MAX) = (VOLspec) / I(WEAK PULL-DOWN-MIN) R ev i si o n 1 0 2- 27 SmartFusion DC and Switching Characteristics Table 2-30 • I/O Short Currents IOSH/IOSL Applicable to FPGA I/O Banks Drive Strength IOSL (mA)* IOSH (mA)* 2 mA 27 25 4 mA 27 25 6 mA 54 51 8 mA 54 51 12 mA 109 103 16 mA 127 132 24 mA 181 268 2 mA 18 16 4 mA 18 16 6 mA 37 32 8 mA 37 32 12 mA 74 65 16 mA 87 83 24 mA 124 169 2 mA 11 9 4 mA 22 17 6 mA 44 35 8 mA 51 45 12 mA 74 91 16 mA 74 91 2 mA 16 13 4 mA 33 25 6 mA 39 32 8 mA 55 66 12 mA 55 66 Per PCI/PCI-X specification 109 103 Drive Strength IOSL (mA)* IOSH (mA)* 3.3 V LVTTL / 3.3 V LVCMOS 8 mA 54 51 2.5 V LVCMOS 8 mA 37 32 1.8 V LVCMOS 4 mA 22 17 1.5 V LVCMOS 2 mA 16 13 3.3 V LVTTL / 3.3 V LVCMOS 2.5 V LVCMOS 1.8 V LVCMOS 1.5 V LVCMOS 3.3 V PCI/PCI-X Note: *TJ = 85°C. Table 2-31 • I/O Short Currents IOSH/IOSL Applicable to MSS I/O Banks Note: *TJ = 85°C 2- 28 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) The length of time an I/O can withstand IOSH/IOSL events depends on the junction temperature. The reliability data below is based on a 3.3 V, 12 mA I/O setting, which is the worst case for this type of analysis. For example, at 100°C, the short current condition would have to be sustained for more than 2200 operation hours to cause a reliability concern. The I/O design does not contain any short circuit protection, but such protection would only be needed in extremely prolonged stress conditions. Table 2-32 • Duration of Short Circuit Event before Failure Temperature Time before Failure –40°C > 20 years 0°C > 20 years 25°C > 20 years 70°C 5 years 85°C 2 years 100°C 6 months Table 2-33 • Schmitt Trigger Input Hysteresis Hysteresis Voltage Value (typical) for Schmitt Mode Input Buffers Input Buffer Configuration Hysteresis Value (typical) 3.3 V LVTTL / LVCMOS / PCI / PCI-X (Schmitt trigger mode) 240 mV 2.5 V LVCMOS (Schmitt trigger mode) 140 mV 1.8 V LVCMOS (Schmitt trigger mode) 80 mV 1.5 V LVCMOS (Schmitt trigger mode) 60 mV Table 2-34 • I/O Input Rise Time, Fall Time, and Related I/O Reliability Input Buffer Input Rise/Fall Time (min.) Input Rise/Fall Time (max.) Reliability LVTTL/LVCMOS No requirement 10 ns * 20 years (100°C) LVDS/B-LVDS/ M-LVDS/LVPECL No requirement 10 ns * 10 years (100°C) Note: *The maximum input rise/fall time is related to the noise induced into the input buffer trace. If the noise is low, then the rise time and fall time of input buffers can be increased beyond the maximum value. The longer the rise/fall times, the more susceptible the input signal is to the board noise. Microsemi SoC Products Group recommends signal integrity evaluation/characterization of the system to ensure that there is no excessive noise coupling into input signals. R ev i si o n 1 0 2- 29 SmartFusion DC and Switching Characteristics Single-Ended I/O Characteristics 3.3 V LVTTL / 3.3 V LVCMOS Low-Voltage Transistor–Transistor Logic (LVTTL) is a general-purpose standard (EIA/JESD) for 3.3 V applications. It uses an LVTTL input buffer and push-pull output buffer. Table 2-35 • Minimum and Maximum DC Input and Output Levels Applicable to FPGA I/O Banks 3.3 V LVTTL / 3.3 V LVCMOS VIL VIH VOL VOH IOL IOH IOSL IOSH mA mA Max. mA1 Max. mA1 IIL IIH Drive Strength Min. V Max. V Min. V Max. V Max. V Min. V 2 mA –0.3 0.8 2 3.6 0.4 2.4 2 2 27 25 15 15 4 mA –0.3 0.8 2 3.6 0.4 2.4 4 4 27 25 15 15 6 mA –0.3 0.8 2 3.6 0.4 2.4 6 6 54 51 15 15 8 mA –0.3 0.8 2 3.6 0.4 2.4 8 8 54 51 15 15 12 mA –0.3 0.8 2 3.6 0.4 2.4 12 12 109 103 15 15 16 mA –0.3 0.8 2 3.6 0.4 2.4 16 16 127 132 15 15 24 mA –0.3 0.8 2 3.6 0.4 2.4 24 24 181 268 10 10 IIL IIH µA2 µA2 Notes: 1. Currents are measured at 100°C junction temperature and maximum voltage. 2. Currents are measured at 85°C junction temperature. 3. Software default selection highlighted in gray. Table 2-36 • Minimum and Maximum DC Input and Output Levels Applicable to MSS I/O Banks 3.3 V LVTTL / 3.3 V LVCMOS VIL VIH VOL VOH IOL IOH IOSL IOSH mA mA Max. mA1 Max. mA1 54 51 Drive Strength Min. V Max. V Min. V Max. V Max. V Min. V 8 mA –0.3 0.8 2 3.6 0.4 2.4 8 8 µA2 µA2 15 Notes: 1. Currents are measured at 100°C junction temperature and maximum voltage. 2. Currents are measured at 85°C junction temperature. 3. Software default selection highlighted in gray. R to VCCxxxxIOBx for tLZ / tZL / tZLS R=1K Test Point Test Point 35 pF Datapath Enable Path R to GND for tHZ / tZH / tZHS 35 pF for tZH / tZHS / tZL / tZLS 35 pF for tHZ / tLZ Figure 2-6 • AC Loading Table 2-37 • AC Waveforms, Measuring Points, and Capacitive Loads Input Low (V) 0 Input High (V) Measuring Point* (V) VREF (typ.) (V) CLOAD (pF) 3.3 1.4 – 35 Note: *Measuring point = Vtrip. See Table 2-22 on page 2-24 for a complete table of trip points. 2- 30 R ev i sio n 1 0 15 SmartFusion Customizable System-on-Chip (cSoC) Timing Characteristics Table 2-38 • 3.3 V LVTTL / 3.3 V LVCMOS High Slew Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V, Worst-Case VCCxxxxIOBx = 3.0 V Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units 4 mA Std. 0.60 7.20 0.04 0.97 0.39 7.34 6.18 2.52 2.46 9.39 8.23 ns –1 0.50 6.00 0.03 0.81 0.32 6.11 5.15 2.10 2.05 7.83 6.86 ns 8 mA Std. 0.60 4.64 0.04 0.97 0.39 4.73 3.84 2.85 3.02 6.79 5.90 ns –1 0.50 3.87 0.03 0.81 0.32 3.94 3.20 2.37 2.52 5.65 4.91 ns 12 mA Std. 0.60 3.37 0.04 0.97 0.39 3.43 2.67 3.07 3.39 5.49 4.73 ns –1 0.50 2.81 0.03 0.81 0.32 2.86 2.23 2.55 2.82 4.58 3.94 ns 16 mA Std. 0.60 3.18 0.04 0.97 0.39 3.24 2.43 3.11 3.48 5.30 4.49 ns –1 0.50 2.65 0.03 0.81 0.32 2.70 2.03 2.59 2.90 4.42 3.74 ns 24 mA Std. 0.60 2.93 0.04 0.97 0.39 2.99 2.03 3.17 3.83 5.05 4.09 ns –1 0.50 2.45 0.03 0.81 0.32 2.49 1.69 2.64 3.19 4.21 3.41 ns Notes: 1. Software default selection highlighted in gray. 2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values. Table 2-39 • 3.3 V LVTTL / 3.3 V LVCMOS Low Slew Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V, Worst-Case VCCxxxxIOBx = 3.0 V Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units 4 mA Std. 0.60 9.75 0.04 0.97 0.39 9.93 8.22 2.52 2.31 11.99 10.28 ns –1 0.50 8.12 0.03 0.81 0.32 8.27 6.85 2.10 1.93 9.99 8.57 ns 8 mA Std. 0.60 6.96 0.04 0.97 0.39 7.09 5.85 2.84 2.87 9.15 7.91 ns –1 0.50 5.80 0.03 0.81 0.32 5.91 4.88 2.37 2.39 7.62 6.59 ns 12 mA Std. 0.60 5.35 0.04 0.97 0.39 5.45 4.58 3.06 3.23 7.51 6.64 ns –1 0.50 4.46 0.03 0.81 0.32 4.54 3.82 2.55 2.69 6.26 5.53 ns 16 mA Std. 0.60 5.01 0.04 0.97 0.39 5.10 4.30 3.11 3.32 7.16 6.36 ns –1 0.50 4.17 0.03 0.81 0.32 4.25 3.58 2.59 2.77 5.97 5.30 ns 24 mA Std. 0.60 4.67 0.04 0.97 0.39 4.75 4.28 3.16 3.66 6.81 6.34 ns –1 0.50 3.89 0.03 0.81 0.32 3.96 3.57 2.64 3.05 5.68 5.28 ns Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values. Table 2-40 • 3.3 V LVTTL / 3.3 V LVCMOS High Slew Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V, Worst-Case VCCxxxxIOBx = 3.0 V Applicable to MSS I/O Banks Drive Strength 8 mA Speed Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Std. 0.22 2.31 0.09 0.94 1.30 0.22 2.35 1.86 2.20 2.45 ns –1 0.18 1.92 0.07 0.78 1.09 0.18 1.96 1.55 1.83 2.04 ns Notes: 1. Software default selection highlighted in gray. 2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values. R ev i si o n 1 0 2- 31 SmartFusion DC and Switching Characteristics 2.5 V LVCMOS Low-Voltage CMOS for 2.5 V is an extension of the LVCMOS standard (JESD8-5) used for generalpurpose 2.5 V applications. Table 2-41 • Minimum and Maximum DC Input and Output Levels Applicable to FPGA I/O Banks 2.5 V LVCMOS VIL VIH VOL VOH IOL IOH IOSL IOSH mA mA Max. mA1 Max. mA1 IIL IIH Drive Strength Min. V Max. V Min. V Max. V Max. V Min. V 2 mA –0.3 0.7 1.7 2.7 0.7 1.7 2 2 18 16 15 15 4 mA –0.3 0.7 1.7 2.7 0.7 1.7 4 4 18 16 15 15 6 mA –0.3 0.7 1.7 2.7 0.7 1.7 6 6 37 32 15 15 8 mA –0.3 0.7 1.7 2.7 0.7 1.7 8 8 37 32 15 15 12 mA –0.3 0.7 1.7 2.7 0.7 1.7 12 12 74 65 15 15 16 mA –0.3 0.7 1.7 2.7 0.7 1.7 16 16 87 83 15 15 24 mA –0.3 0.7 1.7 2.7 0.7 1.7 24 24 124 169 15 15 IIL IIH µA2 µA2 Notes: 1. Currents are measured at high temperature (100°C junction temperature) and maximum voltage. 2. Currents are measured at 85°C junction temperature. 3. Software default selection highlighted in gray. Table 2-42 • Minimum and Maximum DC Input and Output Levels Applicable to MSS I/O Banks 2.5 V LVCMOS VIL VIH VOL VOH IOL IOH IOSL IOSH mA mA Max. mA1 Max., mA1 37 32 Drive Strength Min. V Max. V Min. V Max. V Max. V Min. V 8 mA –0.3 0.7 1.7 3.6 0.7 1.7 8 8 µA2 µA2 15 Notes: 1. Currents are measured at high temperature (100°C junction temperature) and maximum voltage. 2. Currents are measured at 85°C junction temperature. 3. Software default selection highlighted in gray. R to VCCxxxxIOBx for tLZ / tZL / tZLS R=1K Test Point Test Point 35 pF Datapath Enable Path R to GND for tHZ / tZH / tZHS 35 pF for tZH / tZHS / tZL / tZLS 35 pF for tHZ / tLZ Figure 2-7 • AC Loading Table 2-43 • AC Waveforms, Measuring Points, and Capacitive Loads Input Low (V) 0 Input High (V) Measuring Point* (V) VREF (typ.) (V) CLOAD (pF) 2.5 1.2 – 35 * Measuring point = Vtrip. See Table 2-22 on page 2-24 for a complete table of trip points. 2- 32 R ev i sio n 1 0 15 SmartFusion Customizable System-on-Chip (cSoC) Timing Characteristics Table 2-44 • 2.5 V LVCMOS High Slew Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V, Worst-Case VCCxxxxIOBx = 2.3 V Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins Drive Speed Strength Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units 0.55 8.10 0.04 1.23 0.39 7.37 8.10 2.54 2.17 9.43 10.15 ns –1 0.46 6.75 0.03 1.03 0.32 6.14 6.75 2.12 1.81 7.85 8.46 ns Std. 0.55 4.85 0.04 1.23 0.39 4.76 4.85 2.90 2.83 6.82 6.91 ns –1 0.46 4.04 0.03 1.03 0.32 3.97 4.04 2.42 2.36 5.68 5.76 ns 12 mA Std. 0.60 3.28 0.04 1.23 0.39 3.46 3.23 3.15 3.24 5.52 5.29 ns –1 0.50 2.73 0.03 1.03 0.32 2.88 2.69 2.62 2.70 4.60 4.41 ns 16 mA Std. 0.60 3.09 0.04 1.23 0.39 3.27 2.88 3.20 3.35 5.33 4.94 ns –1 0.50 2.57 0.03 1.03 0.32 2.72 2.40 2.67 2.79 4.44 4.12 ns 24 mA Std. 0.60 2.95 0.04 1.23 0.39 3.01 2.31 3.27 3.76 5.07 4.37 ns –1 0.50 2.46 0.03 1.03 0.32 2.51 1.93 2.73 3.13 4.22 3.64 ns 4 mA Std. 8 mA Notes: 1. Software default selection highlighted in gray. 2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values. Table 2-45 • 2.5 V LVCMOS Low Slew Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V, Worst-Case VCCxxxxIOBx = 2.3 V Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units 4 mA Std. 0.55 10.50 0.04 1.23 0.39 10.69 10.50 2.54 2.07 12.75 12.56 ns –1 0.46 8.75 0.03 1.03 0.32 8.91 8.75 2.12 1.73 10.62 10.47 ns 8 mA Std. 0.55 7.61 0.04 1.23 0.39 7.46 7.19 2.81 2.66 9.52 9.25 ns –1 0.46 6.34 0.03 1.03 0.32 6.22 5.99 2.34 2.22 7.93 7.71 ns 12 mA Std. 0.60 5.92 0.04 1.23 0.39 5.79 5.45 3.04 3.06 7.85 7.51 ns –1 0.50 4.93 0.03 1.03 0.32 4.83 4.54 2.53 2.55 6.54 6.26 ns 16 mA Std. 0.60 5.53 0.04 1.23 0.39 5.40 5.09 3.09 3.16 7.46 7.14 ns –1 0.50 4.61 0.03 1.03 0.32 4.50 4.24 2.58 2.64 6.22 5.95 ns 24 mA Std. 0.60 5.18 0.04 1.23 0.39 5.28 5.14 3.27 3.64 7.34 7.20 ns –1 0.50 4.32 0.03 1.03 0.32 4.40 4.29 2.72 3.03 6.11 6.00 ns Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values. Table 2-46 • 2.5 V LVCMOS High Slew Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V, Worst-Case VCCxxxxIOBx = 3.0 V Applicable to MSS I/O Banks Drive Strength 8 mA Speed Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Std. 0.22 2.35 0.09 1.18 1.39 0.22 2.40 2.18 2.19 2.32 ns –1 0.18 1.96 0.07 0.99 1.16 0.18 2.00 1.82 1.82 1.93 ns Notes: 1. Software default selection highlighted in gray. 2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values. R ev i si o n 1 0 2- 33 SmartFusion DC and Switching Characteristics 1.8 V LVCMOS Low-voltage CMOS for 1.8 V is an extension of the LVCMOS standard (JESD8-5) used for generalpurpose 1.8 V applications. It uses a 1.8 V input buffer and a push-pull output buffer. Table 2-47 • Minimum and Maximum DC Input and Output Levels Applicable to FPGA I/O Banks 1.8 V LVCMOS VIL Drive Min. Strength V VOL VOH IOL IOH IOSL IOSH Max. Max. V V Min. V mA mA Max. mA1 Max. mA1 µA2 µA2 VIH Max. V Min. V IIL IIH 2 mA –0.3 0.35 * VCCxxxxIOBx 0.65 * VCCxxxxIOBx 1.9 0.45 VCCxxxxIOBx – 0.45 2 2 11 9 15 15 4 mA –0.3 0.35 * VCCxxxxIOBx 0.65 * VCCxxxxIOBx 1.9 0.45 VCCxxxxIOBx – 0.45 4 4 22 17 15 15 6 mA –0.3 0.35 * VCCxxxxIOBx 0.65 * VCCxxxxIOBx 1.9 0.45 VCCxxxxIOBx – 0.45 6 6 44 35 15 15 8 mA –0.3 0.35 * VCCxxxxIOBx 0.65 * VCCxxxxIOBx 1.9 0.45 VCCxxxxIOBx – 0.45 8 8 51 45 15 15 12 mA –0.3 0.35 * VCCxxxxIOBx 0.65 * VCCxxxxIOBx 1.9 0.45 VCCxxxxIOBx 12 12 – 0.45 74 91 15 15 16 mA –0.3 0.35 * VCCxxxxIOBx 0.65 * VCCxxxxIOBx 1.9 0.45 VCCxxxxIOBx 16 16 – 0.45 74 91 15 15 Notes: 1. Currents are measured at high temperature (100°C junction temperature) and maximum voltage. 2. Currents are measured at 85°C junction temperature. 3. Software default selection highlighted in gray. Table 2-48 • Minimum and Maximum DC Input and Output Levels Applicable to MSS I/O Banks 1.8 V LVCMOS VIL Drive Min. Strength V 4 mA –0.3 VOL VOH IOL IOH Max. Max. V V Min. V Max. mA mA mA1 VIH Max. V Min. V 0.35 * VCCxxxxIOBx 0.65 * VCCxxxxIOBx 3.6 0.45 VCCxxxxIOBx – 0.45 4 4 IOSL 22 IOSH IIL 17 15 Notes: 1. Currents are measured at high temperature (100°C junction temperature) and maximum voltage. 2. Currents are measured at 85°C junction temperature. 3. Software default selection highlighted in gray. R to VCCxxxxIOBx for tLZ / tZL / tZLS R=1K Test Point Test Point 35 pF Datapath Enable Path R to GND for tHZ / tZH / tZHS 35 pF for tZH / tZHS / tZL / tZLS 35 pF for tHZ / tLZ Figure 2-8 • AC Loading Table 2-49 • AC Waveforms, Measuring Points, and Capacitive Loads Input Low (V) 0 Input High (V) Measuring Point* (V) VREF (typ.) (V) CLOAD (pF) 1.8 0.9 – 35 * Measuring point = Vtrip. See Table 2-22 on page 2-24 for a complete table of trip points. 2- 34 R ev i sio n 1 0 IIH Max. mA1 µA2 µA2 15 SmartFusion Customizable System-on-Chip (cSoC) Timing Characteristics Table 2-50 • 1.8 V LVCMOS High Slew Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V, Worst-Case VCCxxxxIOBx = 1.7 V Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins Drive Speed Strength Grade 2 mA 4 mA 6 mA 8 mA 12 mA 16 mA tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units Std. 0.60 11.06 0.04 1.14 0.39 8.61 11.06 2.61 1.59 10.67 13.12 ns –1 0.50 9.22 0.03 0.95 0.32 7.17 9.22 2.18 1.33 8.89 10.93 ns Std. 0.60 6.46 0.04 1.14 0.39 5.53 6.46 3.04 2.66 7.59 8.51 ns –1 0.50 5.38 0.03 0.95 0.32 4.61 5.38 2.54 2.22 6.33 7.10 ns Std. 0.60 4.16 0.04 1.14 0.39 3.99 4.16 3.34 3.18 6.05 6.22 ns –1 0.50 3.47 0.03 0.95 0.32 3.32 3.47 2.78 2.65 5.04 5.18 ns Std. 0.60 3.69 0.04 1.14 0.39 3.76 3.67 3.40 3.31 5.81 5.73 ns –1 0.50 3.07 0.03 0.95 0.32 3.13 3.06 2.84 2.76 4.85 4.78 ns Std. 0.60 3.38 0.04 1.14 0.39 3.44 2.86 3.50 3.82 5.50 4.91 ns –1 0.50 2.81 0.03 0.95 0.32 2.87 2.38 2.92 3.18 4.58 4.10 ns Std. 0.60 3.38 0.04 1.14 0.39 3.44 2.86 3.50 3.82 5.50 4.91 ns –1 0.50 2.81 0.03 0.95 0.32 2.87 2.38 2.92 3.18 4.58 4.10 ns Notes: 1. Software default selection highlighted in gray. 2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values. Table 2-51 • 1.8 V LVCMOS Low Slew Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V, Worst-Case VCCxxxxIOBx = 1.7 V Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins Drive Strength 2 mA 4 mA 6 mA 8 mA 12 mA 16 mA Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units Std. 0.60 14.24 0.04 1.14 0.39 13.47 14.24 2.62 1.54 15.53 16.30 ns –1 0.50 11.87 0.03 0.95 0.32 11.23 11.87 2.18 1.28 12.94 13.59 ns Std. 0.60 9.74 0.04 1.14 0.39 9.92 9.62 3.05 2.57 11.98 11.68 ns –1 0.50 8.11 0.03 0.95 0.32 8.26 8.02 2.54 2.14 9.98 9.74 ns Std. 0.60 7.67 0.04 1.14 0.39 7.81 7.24 3.34 3.08 9.87 9.30 ns –1 0.50 6.39 0.03 0.95 0.32 6.51 6.03 2.79 2.56 8.23 7.75 ns Std. 0.60 7.15 0.04 1.14 0.39 7.29 6.75 3.41 3.21 9.34 8.80 ns –1 0.50 5.96 0.03 0.95 0.32 6.07 5.62 2.84 2.68 7.79 7.34 ns Std. 0.60 6.76 0.04 1.14 0.39 6.89 6.75 3.50 3.70 8.95 8.81 ns –1 0.50 5.64 0.03 0.95 0.32 5.74 5.62 2.92 3.08 7.46 7.34 ns Std. 0.60 6.76 0.04 1.14 0.39 6.89 6.75 3.50 3.70 8.95 8.81 ns –1 0.50 5.64 0.03 0.95 0.32 5.74 5.62 2.92 3.08 7.46 7.34 ns Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values. R ev i si o n 1 0 2- 35 SmartFusion DC and Switching Characteristics Table 2-52 • 1.8 V LVCMOS High Slew Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V, Worst-Case VCCxxxxIOBx = 1.7 V Applicable to MSS I/O Banks Drive Strength 4 mA Speed Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Std. 0.22 2.77 0.09 1.09 1.64 0.22 2.82 2.72 2.21 2.25 ns –1 0.18 2.31 0.07 0.91 1.37 0.18 2.35 2.27 1.84 1.87 ns Notes: 1. Software default selection highlighted in gray. 2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values. 2- 36 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) 1.5 V LVCMOS (JESD8-11) Low-Voltage CMOS for 1.5 V is an extension of the LVCMOS standard (JESD8-5) used for generalpurpose 1.5 V applications. It uses a 1.5 V input buffer and a push-pull output buffer. Table 2-53 • Minimum and Maximum DC Input and Output Levels Applicable to FPGA I/O Banks 1.5 V LVCMOS VIL Drive Min. Strength V VIH Max. V Min. V Max. V VOL VOH Max. V Min. V IOL IOH IOSL Max. mA mA mA1 IOSH IIL IIH Max. mA1 µA2 µA2 2 mA –0.3 0.35 * 0.65 * 1.575 0.25* 0.75 * VCCxxxxIOBx VCCxxxxIOBx VCCxxxxIOBx VCCxxxxIOBx 2 2 16 13 15 15 4 mA – 0.3 0.35* 0.65 * 1.575 0.25* 0.75 * VCCxxxxIOBx VCCxxxxIOBx VCCxxxxIOBx VCCxxxxIOBx 4 4 33 25 15 15 6 mA – 0.35 * 0.65 * 1.575 0.25* 0.75 * 0.3 VCCxxxxIOBx VCCxxxxIOBx VCCxxxxIOBx VCCxxxxIOBx 6 6 39 32 15 15 8 mA – 0.35 * 0.65 * 1.575 0.3 VCCxxxxIOBx VCCxxxxIOBx 8 8 55 66 15 15 12 mA – 0.35 * 0.65 * 1.575 0.25 * 0.75 * 12 12 0.3 VCCxxxxIOBx VCCxxxxIOBx VCCxxxxIOBx VCCxxxxIOBx 55 66 15 15 0.25* VCC 0.75 * VCCxxxxIOBx Notes: 1. Currents are measured at high temperature (100°C junction temperature) and maximum voltage. 2. Currents are measured at 85°C junction temperature. 3. Software default selection highlighted in gray. Table 2-54 • Minimum and Maximum DC Input and Output Levels Applicable to MSS I/O Banks 1.5 V LVCMOS VIL Drive Min. Strength V 2 mA –0.3 VOL VOH IOL IOH IOSL IOSH IIL IIH Max. V Min. V Max. Max. µA mA mA mA1 mA1 µA2 2 VIH Max. V Min. V Max. V 0.35 * 0.65 * 1.575 0.25 * 0.75 * VCCxxxxIOBx VCCxxxxIOBx VCCxxxxIOBx VCCxxxxIOBx 2 2 16 13 15 15 Notes: 1. Currents are measured at high temperature (100°C junction temperature) and maximum voltage. 2. Currents are measured at 85°C junction temperature. 3. Software default selection highlighted in gray. R to VCCxxxxIOBx for tLZ / tZL / tZLS R=1K Test Point Test Point 35 pF Datapath Enable Path R to GND for tHZ / tZH / tZHS 35 pF for tZH / tZHS / tZL / tZLS 35 pF for tHZ / tLZ Figure 2-9 • AC Loading Table 2-55 • AC Waveforms, Measuring Points, and Capacitive Loads Input Low (V) 0 Input High (V) Measuring Point* (V) VREF (typ.) (V) CLOAD (pF) 1.5 0.75 – 35 * Measuring point = Vtrip. See Table 2-22 on page 2-24 for a complete table of trip points. R ev i si o n 1 0 2- 37 SmartFusion DC and Switching Characteristics Timing Characteristics Table 2-56 • 1.5 V LVCMOS High Slew Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V, Worst-Case VCCxxxxIOBx = 1.425 V Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units 2m Std. 0.60 7.79 0.04 1.34 0.39 6.43 7.79 3.19 2.59 8.49 9.85 ns –1 0.50 6.49 0.03 1.12 0.32 5.36 6.49 2.66 2.16 7.08 8.21 ns 4 mA Std. 0.60 4.95 0.04 1.34 0.39 4.61 4.96 3.53 3.19 6.67 7.02 ns –1 0.50 4.13 0.03 1.12 0.32 3.85 4.13 2.94 2.66 5.56 5.85 ns 6 mA Std. 0.60 4.36 0.04 1.34 0.39 4.34 4.36 3.60 3.34 6.40 6.42 ns –1 0.50 3.64 0.03 1.12 0.32 3.62 3.64 3.00 2.78 5.33 5.35 ns 8 mA Std. 0.60 3.89 0.04 1.34 0.39 3.96 3.34 3.72 3.92 6.02 5.40 ns –1 0.50 3.24 0.03 1.12 0.32 3.30 2.79 3.10 3.27 5.02 4.50 ns 12 mA Std. 0.60 3.89 0.04 1.34 0.39 3.96 3.34 3.72 3.92 6.02 5.40 ns –1 0.50 3.24 0.03 1.12 0.32 3.30 2.79 3.10 3.27 5.02 4.50 ns Notes: 1. Software default selection highlighted in gray. 2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values. Table 2-57 • 1.5 V LVCMOS Low Slew Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V, Worst-Case VCCxxxxIOBx = 1.4 V Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins Drive Strength Speed Grade tDOUT tDP tDIN tPY tEOUT 2 mA Std. 0.60 11.96 0.04 1.34 0.39 12.18 11.70 –1 0.50 9.96 0.03 1.12 0.32 10.15 9.75 2.67 2.06 11.86 11.46 ns 4 mA Std. 0.60 9.51 0.04 1.34 0.39 9.68 8.76 3.54 3.07 11.74 10.82 ns –1 0.50 7.92 0.03 1.12 0.32 8.07 7.30 2.95 2.56 9.79 9.02 ns 6 mA Std. 0.60 8.86 0.04 1.34 0.39 9.03 8.17 3.61 3.22 11.08 10.23 ns –1 0.50 7.39 0.03 1.12 0.32 7.52 6.81 3.01 2.68 9.24 8.52 ns 8 mA Std. 0.60 8.44 0.04 1.34 0.39 8.60 8.18 3.73 3.78 10.66 10.24 ns –1 0.50 7.04 0.03 1.12 0.32 7.17 6.82 3.11 3.15 8.88 8.53 ns 12 mA Std. 0.60 8.44 0.04 1.34 0.39 8.60 8.18 3.73 3.78 10.66 10.24 ns –1 0.50 7.04 0.03 1.12 0.32 7.17 6.82 3.11 3.15 8.88 ns tZL tZH tLZ tHZ 3.20 2.47 tZLS tZHS 14.24 13.76 8.53 Units ns Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values. Table 2-58 • 1.5 V LVCMOS High Slew Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V, Worst-Case VCCxxxxIOBx = 3.0 V Applicable to MSS I/O Banks Drive Strength 2 mA Speed Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ Units Std. 0.22 3.24 0.09 1.28 1.86 0.22 3.30 3.20 2.24 2.21 ns –1 0.18 2.70 0.07 1.07 1.55 0.18 2.75 2.67 1.87 1.85 ns Notes: 1. Software default selection highlighted in gray. 2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values. 2- 38 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) 3.3 V PCI, 3.3 V PCI-X Peripheral Component Interface for 3.3 V standard specifies support for 33 MHz and 66 MHz PCI Bus applications. Table 2-59 • Minimum and Maximum DC Input and Output Levels 3.3 V PCI/PCI-X VIL Min. V Drive Strength VIH Max. V Min. V Max. V Per PCI specification VOL VOH IOL IOH IOSL IOSH Max. V Min. V mA mA Max. mA1 Max. mA1 IIL IIH µA2 µA2 Per PCI curves 15 15 Notes: 1. Currents are measured at high temperature (100°C junction temperature) and maximum voltage. 2. Currents are measured at 85°C junction temperature. AC loadings are defined per the PCI/PCI-X specifications for the datapath; SoC Products Group loadings for enable path characterization are described in Figure 2-10. R to VCCXXXXIOBX for tDP (F) R = 25 R to GND for tDP (R) Test Point R=1k Test Point R to GND for tHZ / tZH / tZHS 10 pF for tZH / tZHS / tZL / tZLS Enable Path Datapath R to VCCXXXXIOBX for tLZ / tZL/ tZLS 10 pF for tHZ / tLZ Figure 2-10 • AC Loading AC loadings are defined per PCI/PCI-X specifications for the datapath; SoC Products Group loading for tristate is described in Table 2-60. Table 2-60 • AC Waveforms, Measuring Points, and Capacitive Loads Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) CLOAD (pF) 3.3 0.285 * VCCxxxxIOBx for tDP(R) 0.615 * VCCxxxxIOBx for tDP(F) – 10 0 * Measuring point = Vtrip. See Table 2-22 on page 2-24 for a complete table of trip points. Timing Characteristics Table 2-61 • 3.3 V PCI Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V, Worst-Case VCCxxxxIOBx = 3.0 V Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units Std. 0.60 2.54 0.04 0.82 0.39 2.58 1.88 3.06 3.39 4.64 3.94 ns –1 0.50 2.11 0.03 0.68 0.32 2.15 1.57 2.55 2.82 3.87 3.28 ns Speed Grade Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values. Table 2-62 • 3.3 V PCI-X Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V, Worst-Case VCCxxxxIOBx = 3.0 V Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins tDOUT tDP Std. 0.60 2.54 –1 0.50 2.11 Speed Grade tDIN tPY tEOUT tZL 0.04 0.77 0.39 2.58 0.03 0.64 0.32 2.15 tZH tLZ tHZ tZLS tZHS Units 1.88 3.06 3.39 4.64 3.94 ns 1.57 2.55 2.82 3.87 3.28 ns Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values. R ev i si o n 1 0 2- 39 SmartFusion DC and Switching Characteristics Differential I/O Characteristics Physical Implementation Configuration of the I/O modules as a differential pair is handled by SoC Products Group Designer software when the user instantiates a differential I/O macro in the design. Differential I/Os can also be used in conjunction with the embedded Input Register (InReg), Output Register (OutReg), Enable Register (EnReg), and Double Data Rate (DDR). However, there is no support for bidirectional I/Os or tristates with the LVPECL standards. LVDS Low-Voltage Differential Signaling (ANSI/TIA/EIA-644) is a high-speed, differential I/O standard. It requires that one data bit be carried through two signal lines, so two pins are needed. It also requires external resistor termination. The full implementation of the LVDS transmitter and receiver is shown in an example in Figure 2-11. The building blocks of the LVDS transmitter-receiver are one transmitter macro, one receiver macro, three board resistors at the transmitter end, and one resistor at the receiver end. The values for the three driver resistors are different from those used in the LVPECL implementation because the output standard specifications are different. Along with LVDS I/O, SmartFusion cSoCs also support bus LVDS structure and multipoint LVDS (M-LVDS) configuration (up to 40 nodes). Bourns Part Number: CAT16-LV4F12 OUTBUF_LVDS FPGA P 165 140 N 165 Z0 = 50 Figure 2-11 • LVDS Circuit Diagram and Board-Level Implementation 2- 40 P Z0 = 50 R ev i sio n 1 0 FPGA + – 100 N INBUF_LVDS SmartFusion Customizable System-on-Chip (cSoC) Table 2-63 • LVDS Minimum and Maximum DC Input and Output Levels DC Parameter Description Min. Typ. Max. Units 2.375 2.5 2.625 V VCCFPGAIOBx Supply voltage VOL Output low voltage 0.9 1.075 1.25 V VOH IOL Output high voltage 1.25 1.425 1.6 V 1 Output lower current 0.65 0.91 1.16 mA 1 Output high current 0.65 0.91 1.16 mA 2.925 V IOH VI Input voltage IIH2 0 Input high leakage current 15 µA IIL2 Input low leakage current 15 µA VODIFF Differential output voltage VOCM 250 350 450 mV Output common mode voltage 1.125 1.25 1.375 V VICM Input common mode voltage 0.05 1.25 2.35 V VIDIFF Input differential voltage 100 350 mV Notes: 1. IOL / IOH defined by VODIFF /(resistor network). 2. Currents are measured at 85°C junction temperature. Table 2-64 • AC Waveforms, Measuring Points, and Capacitive Loads Input Low (V) 1.075 Input High (V) Measuring Point* (V) VREF (typ.) (V) 1.325 Cross point – * Measuring point = Vtrip. See Table 2-22 on page 2-24 for a complete table of trip points. Timing Characteristics Table 2-65 • LVDS Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V, Worst-Case VCCFPGAIOBx = 2.3 V Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins Speed Grade tDOUT tDP tDIN tPY Units Std. 0.60 1.83 0.04 1.87 ns –1 0.50 1.53 0.03 1.55 ns Notes: 1. For the derating values at specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values. 2. The above mentioned timing parameters correspond to 24mA drive strength. R ev i si o n 1 0 2- 41 SmartFusion DC and Switching Characteristics B-LVDS/M-LVDS Bus LVDS (B-LVDS) and Multipoint LVDS (M-LVDS) specifications extend the existing LVDS standard to high-performance multipoint bus applications. Multidrop and multipoint bus configurations may contain any combination of drivers, receivers, and transceivers. SoC Products Group LVDS drivers provide the higher drive current required by B-LVDS and M-LVDS to accommodate the loading. The drivers require series terminations for better signal quality and to control voltage swing. Termination is also required at both ends of the bus since the driver can be located anywhere on the bus. These configurations can be implemented using the TRIBUF_LVDS and BIBUF_LVDS macros along with appropriate terminations. Multipoint designs using SoC Products Group LVDS macros can achieve up to 200 MHz with a maximum of 20 loads. A sample application is given in Figure 2-12. The input and output buffer delays are available in the LVDS section in Table 2-65. Example: For a bus consisting of 20 equidistant loads, the following terminations provide the required differential voltage, in worst-case commercial operating conditions, at the farthest receiver: RS = 60 and RT = 70 , given Z0 = 50 (2") and Zstub = 50 (~1.5"). Receiver Transceiver EN R RS Zstub + RS Zstub Z0 RT Z 0 D EN T - + Driver RS Zstub - RS Zstub Zstub EN Transceiver EN R - + RS Receiver + RS Zstub EN T - RS Zstub + RS Zstub RS BIBUF_LVDS - RS ... Z0 Z0 Z0 Z0 Z0 Z0 Z0 Z0 Z0 Z0 RT Figure 2-12 • B-LVDS/M-LVDS Multipoint Application Using LVDS I/O Buffers LVPECL Low-Voltage Positive Emitter-Coupled Logic (LVPECL) is another differential I/O standard. It requires that one data bit be carried through two signal lines. Like LVDS, two pins are needed. It also requires external resistor termination. The full implementation of the LVDS transmitter and receiver is shown in an example in Figure 2-13. The building blocks of the LVPECL transmitter-receiver are one transmitter macro, one receiver macro, three board resistors at the transmitter end, and one resistor at the receiver end. The values for the three driver resistors are different from those used in the LVDS implementation because the output standard specifications are different. Bourns Part Number: CAT16-PC4F12 OUTBUF_LVPECL FPGA P 100 187 W N 100 P Z0 = 50 Figure 2-13 • LVPECL Circuit Diagram and Board-Level Implementation 2- 42 R ev i sio n 1 0 + – 100 Z0 = 50 FPGA N INBUF_LVPECL SmartFusion Customizable System-on-Chip (cSoC) Table 2-66 • Minimum and Maximum DC Input and Output Levels DC Parameter Description Min. VCCFPGAIOBx Supply Voltage Max. Min. 3.0 Max. Min. 3.3 Max. Units 3.6 V VOL Output Low Voltage 0.96 1.27 1.06 1.43 1.30 1.57 V VOH Output High Voltage 1.8 2.11 1.92 2.28 2.13 2.41 V VIL, VIH Input Low, Input High Voltages 0 3.6 0 3.6 0 3.6 V VODIFF Differential Output Voltage 0.625 0.97 0.625 0.97 0.625 0.97 V VOCM Output Common-Mode Voltage 1.762 1.98 1.762 1.98 1.762 1.98 V VICM Input Common-Mode Voltage 1.01 2.57 1.01 2.57 1.01 2.57 V VIDIFF Input Differential Voltage 300 300 300 mV Table 2-67 • AC Waveforms, Measuring Points, and Capacitive Loads Input Low (V) 1.64 Input High (V) Measuring Point* (V) VREF (typ.) (V) 1.94 Cross point – * Measuring point = Vtrip. See Table 2-22 on page 2-24 for a complete table of trip points. Timing Characteristics Table 2-68 • LVPECL Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V, Worst-Case VCCFPGAIOBx = 3.0 V Applicable to FPGA I/O Banks, I/O Assigned to EMC I/O Pins Speed Grade tDOUT tDP tDIN tPY Units Std. 0.60 1.76 0.04 1.76 ns –1 0.50 1.46 0.03 1.46 ns Notes: 1. For the derating values at specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values. 2. The above mentioned timing parameters correspond to 24mA drive strength. R ev i si o n 1 0 2- 43 SmartFusion DC and Switching Characteristics I/O Register Specifications Fully Registered I/O Buffers with Synchronous Enable and Asynchronous Preset INBUF Preset L DOUT Data_out C PRE D Q DFN1E1P1 E Y F Core Array G PRE D Q DFN1E1P1 TRIBUF CLKBUF CLK INBUF Enable INBUF Data E E EOUT B H I A J K INBUF INBUF D_Enable CLK CLKBUF Enable Data Input I/O Register with: Active High Enable Active High Preset Positive-Edge Triggered PRE D Q DFN1E1P1 E Data Output Register and Enable Output Register with: Active High Enable Active High Preset Postive-Edge Triggered Figure 2-14 • Timing Model of Registered I/O Buffers with Synchronous Enable and Asynchronous Preset 2- 44 R ev i sio n 1 0 Pad Out D SmartFusion Customizable System-on-Chip (cSoC) Table 2-69 • Parameter Definition and Measuring Nodes Parameter Name Parameter Definition Measuring Nodes (from, to)* tOCLKQ Clock-to-Q of the Output Data Register H, DOUT tOSUD Data Setup Time for the Output Data Register F, H tOHD Data Hold Time for the Output Data Register F, H tOSUE Enable Setup Time for the Output Data Register G, H tOHE Enable Hold Time for the Output Data Register G, H tOPRE2Q Asynchronous Preset-to-Q of the Output Data Register tOREMPRE Asynchronous Preset Removal Time for the Output Data Register L, H tORECPRE Asynchronous Preset Recovery Time for the Output Data Register L, H tOECLKQ Clock-to-Q of the Output Enable Register tOESUD Data Setup Time for the Output Enable Register J, H tOEHD Data Hold Time for the Output Enable Register J, H tOESUE Enable Setup Time for the Output Enable Register K, H tOEHE Enable Hold Time for the Output Enable Register K, H tOEPRE2Q Asynchronous Preset-to-Q of the Output Enable Register tOEREMPRE Asynchronous Preset Removal Time for the Output Enable Register I, H tOERECPRE Asynchronous Preset Recovery Time for the Output Enable Register I, H tICLKQ Clock-to-Q of the Input Data Register A, E tISUD Data Setup Time for the Input Data Register C, A tIHD Data Hold Time for the Input Data Register C, A tISUE Enable Setup Time for the Input Data Register B, A tIHE Enable Hold Time for the Input Data Register B, A tIPRE2Q Asynchronous Preset-to-Q of the Input Data Register D, E tIREMPRE Asynchronous Preset Removal Time for the Input Data Register D, A tIRECPRE Asynchronous Preset Recovery Time for the Input Data Register D, A L, DOUT H, EOUT I, EOUT * See Figure 2-14 on page 2-44 for more information. R ev i si o n 1 0 2- 45 SmartFusion DC and Switching Characteristics Fully Registered I/O Buffers with Synchronous Enable and Asynchronous Clear CC D Q DFN1E1C1 EE Data_out FF D Q DFN1E1C1 TRIBUF INBUF Data Core Array Pad Out DOUT Y GG INBUF Enable EOUT E E BB CLR CLR LL INBUF CLR CLKBUF CLK HH AA JJ DD KK Data Input I/O Register with Active High Enable Active High Clear Positive-Edge Triggered D Q DFN1E1C1 E INBUF CLKBUF CLK Enable INBUF D_Enable CLR Data Output Register and Enable Output Register with Active High Enable Active High Clear Positive-Edge Triggered Figure 2-15 • Timing Model of the Registered I/O Buffers with Synchronous Enable and Asynchronous Clear 2- 46 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) Table 2-70 • Parameter Definition and Measuring Nodes Parameter Name Parameter Definition Measuring Nodes (from, to)* tOCLKQ Clock-to-Q of the Output Data Register HH, DOUT tOSUD Data Setup Time for the Output Data Register FF, HH tOHD Data Hold Time for the Output Data Register FF, HH tOSUE Enable Setup Time for the Output Data Register GG, HH tOHE Enable Hold Time for the Output Data Register GG, HH tOCLR2Q Asynchronous Clear-to-Q of the Output Data Register tOREMCLR Asynchronous Clear Removal Time for the Output Data Register LL, HH tORECCLR Asynchronous Clear Recovery Time for the Output Data Register LL, HH tOECLKQ Clock-to-Q of the Output Enable Register tOESUD Data Setup Time for the Output Enable Register JJ, HH tOEHD Data Hold Time for the Output Enable Register JJ, HH tOESUE Enable Setup Time for the Output Enable Register KK, HH tOEHE Enable Hold Time for the Output Enable Register KK, HH tOECLR2Q Asynchronous Clear-to-Q of the Output Enable Register II, EOUT tOEREMCLR Asynchronous Clear Removal Time for the Output Enable Register II, HH tOERECCLR Asynchronous Clear Recovery Time for the Output Enable Register II, HH tICLKQ Clock-to-Q of the Input Data Register AA, EE tISUD Data Setup Time for the Input Data Register CC, AA tIHD Data Hold Time for the Input Data Register CC, AA tISUE Enable Setup Time for the Input Data Register BB, AA tIHE Enable Hold Time for the Input Data Register BB, AA tICLR2Q Asynchronous Clear-to-Q of the Input Data Register DD, EE tIREMCLR Asynchronous Clear Removal Time for the Input Data Register DD, AA tIRECCLR Asynchronous Clear Recovery Time for the Input Data Register DD, AA LL, DOUT HH, EOUT * See Figure 2-15 on page 2-46 for more information. R ev i si o n 1 0 2- 47 SmartFusion DC and Switching Characteristics Input Register tICKMPWH tICKMPWL CLK 50% 50% Enable 50% 1 50% 50% 50% tIHD tISUD Data 50% 50% 50% 0 tIWPRE 50% tIRECPRE tIREMPRE 50% 50% tIHE Preset tISUE 50% tIWCLR 50% Clear tIRECCLR tIREMCLR 50% 50% tIPRE2Q 50% Out_1 50% tICLR2Q 50% tICLKQ Figure 2-16 • Input Register Timing Diagram Timing Characteristics Table 2-71 • Input Data Register Propagation Delays Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V Parameter Description –1 Std. Units tICLKQ Clock-to-Q of the Input Data Register 0.24 0.29 ns tISUD Data Setup Time for the Input Data Register 0.27 0.32 ns tIHD Data Hold Time for the Input Data Register 0.00 0.00 ns tISUE Enable Setup Time for the Input Data Register 0.38 0.45 ns tIHE Enable Hold Time for the Input Data Register 0.00 0.00 ns tICLR2Q Asynchronous Clear-to-Q of the Input Data Register 0.46 0.55 ns tIPRE2Q Asynchronous Preset-to-Q of the Input Data Register 0.46 0.55 ns tIREMCLR Asynchronous Clear Removal Time for the Input Data Register 0.00 0.00 ns tIRECCLR Asynchronous Clear Recovery Time for the Input Data Register 0.23 0.27 ns tIREMPRE Asynchronous Preset Removal Time for the Input Data Register 0.00 0.00 ns tIRECPRE Asynchronous Preset Recovery Time for the Input Data Register 0.23 0.27 ns tIWCLR Asynchronous Clear Minimum Pulse Width for the Input Data Register 0.22 0.22 ns tIWPRE Asynchronous Preset Minimum Pulse Width for the Input Data Register 0.22 0.22 ns tICKMPWH Clock Minimum Pulse Width High for the Input Data Register 0.36 0.36 ns tICKMPWL Clock Minimum Pulse Width Low for the Input Data Register 0.32 0.32 ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values. 2- 48 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) Output Register tOCKMPWH tOCKMPWL CLK 50% 50% 50% 50% 50% 50% 50% tOSUD tOHD 1 Data_out Enable 50% 50% 0 50% tOWPRE tOHE Preset tOSUE tOREMPRE tORECPRE 50% 50% 50% tOWCLR 50% Clear tOREMCLR tORECCLR 50% 50% tOPRE2Q 50% DOUT 50% tOCLR2Q 50% tOCLKQ Figure 2-17 • Output Register Timing Diagram Timing Characteristics Table 2-72 • Output Data Register Propagation Delays Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V Parameter Description –1 Std. Units tOCLKQ Clock-to-Q of the Output Data Register 0.60 0.72 ns tOSUD Data Setup Time for the Output Data Register 0.32 0.38 ns tOHD Data Hold Time for the Output Data Register 0.00 0.00 ns tOSUE Enable Setup Time for the Output Data Register 0.44 0.53 ns tOHE Enable Hold Time for the Output Data Register 0.00 0.00 ns tOCLR2Q Asynchronous Clear-to-Q of the Output Data Register 0.82 0.98 ns tOPRE2Q Asynchronous Preset-to-Q of the Output Data Register 0.82 0.98 ns tOREMCLR Asynchronous Clear Removal Time for the Output Data Register 0.00 0.00 ns tORECCLR Asynchronous Clear Recovery Time for the Output Data Register 0.23 0.27 ns tOREMPRE Asynchronous Preset Removal Time for the Output Data Register 0.00 0.00 ns tORECPRE Asynchronous Preset Recovery Time for the Output Data Register 0.23 0.27 ns tOWCLR Asynchronous Clear Minimum Pulse Width for the Output Data Register 0.22 0.22 ns tOWPRE Asynchronous Preset Minimum Pulse Width for the Output Data Register 0.22 0.22 ns tOCKMPWH Clock Minimum Pulse Width High for the Output Data Register 0.36 0.36 ns tOCKMPWL Clock Minimum Pulse Width Low for the Output Data Register 0.32 0.32 ns Note: For the derating values at specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values. R ev i si o n 1 0 2- 49 SmartFusion DC and Switching Characteristics Output Enable Register tOECKMPWH tOECKMPWL CLK 50% 50% 50% 50% 50% 50% 50% tOESUD tOEHD 1 D_Enable Enable Preset 50% 0 50% 50% tOEWPRE 50% tOESUEtOEHE tOEREMPRE tOERECPRE 50% 50% tOEWCLR 50% Clear tOEPRE2Q EOUT 50% tOEREMCLR tOERECCLR 50% 50% tOECLR2Q 50% 50% tOECLKQ Figure 2-18 • Output Enable Register Timing Diagram Timing Characteristics Table 2-73 • Output Enable Register Propagation Delays Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V Parameter Description –1 Std. Units tOECLKQ Clock-to-Q of the Output Enable Register 0.45 0.54 ns tOESUD Data Setup Time for the Output Enable Register 0.32 0.38 ns tOEHD Data Hold Time for the Output Enable Register 0.00 0.00 ns tOESUE Enable Setup Time for the Output Enable Register 0.44 0.53 ns tOEHE Enable Hold Time for the Output Enable Register 0.00 0.00 ns tOECLR2Q Asynchronous Clear-to-Q of the Output Enable Register 0.68 0.81 ns tOEPRE2Q Asynchronous Preset-to-Q of the Output Enable Register 0.68 0.81 ns tOEREMCLR Asynchronous Clear Removal Time for the Output Enable Register 0.00 0.00 ns tOERECCLR Asynchronous Clear Recovery Time for the Output Enable Register 0.23 0.27 ns tOEREMPRE Asynchronous Preset Removal Time for the Output Enable Register 0.00 0.00 ns tOERECPRE Asynchronous Preset Recovery Time for the Output Enable Register 0.23 0.27 ns tOEWCLR Asynchronous Clear Minimum Pulse Width for the Output Enable Register 0.22 0.22 ns tOEWPRE Asynchronous Preset Minimum Pulse Width for the Output Enable Register 0.22 0.22 ns tOECKMPWH Clock Minimum Pulse Width High for the Output Enable Register 0.36 0.36 ns tOECKMPWL Clock Minimum Pulse Width Low for the Output Enable Register 0.32 0.32 ns Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values. 2- 50 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) DDR Module Specifications Input DDR Module Input DDR INBUF Data A D Out_QF (to core) E Out_QR (to core) FF1 B CLK CLKBUF FF2 C CLR INBUF DDR_IN Figure 2-19 • Input DDR Timing Model Table 2-74 • Parameter Definitions Parameter Name Parameter Definition Measuring Nodes (from, to) tDDRICLKQ1 Clock-to-Out Out_QR B, D tDDRICLKQ2 Clock-to-Out Out_QF B, E tDDRISUD Data Setup Time of DDR input A, B tDDRIHD Data Hold Time of DDR input A, B tDDRICLR2Q1 Clear-to-Out Out_QR C, D tDDRICLR2Q2 Clear-to-Out Out_QF C, E tDDRIREMCLR Clear Removal C, B tDDRIRECCLR Clear Recovery C, B R ev i si o n 1 0 2- 51 SmartFusion DC and Switching Characteristics CLK tDDRISUD Data 1 2 3 4 5 6 tDDRIHD 7 8 9 tDDRIRECCLR CLR tDDRIREMCLR tDDRICLKQ1 tDDRICLR2Q1 Out_QF 2 6 4 tDDRICLKQ2 tDDRICLR2Q2 Out_QR 3 5 7 Figure 2-20 • Input DDR Timing Diagram Timing Characteristics Table 2-75 • Input DDR Propagation Delays Worst Commercial-Case Conditions: TJ = 85°C, Worst Case VCC = 1.425 V Parameter Description –1 Units tDDRICLKQ1 Clock-to-Out Out_QR for Input DDR 0.39 ns tDDRICLKQ2 Clock-to-Out Out_QF for Input DDR 0.28 ns tDDRISUD Data Setup for Input DDR 0.29 ns tDDRIHD Data Hold for Input DDR 0.00 ns tDDRICLR2Q1 Asynchronous Clear-to-Out Out_QR for Input DDR 0.58 ns tDDRICLR2Q2 Asynchronous Clear-to-Out Out_QF for Input DDR 0.47 ns tDDRIREMCLR Asynchronous Clear Removal time for Input DDR 0.00 ns tDDRIRECCLR Asynchronous Clear Recovery time for Input DDR 0.23 ns tDDRIWCLR Asynchronous Clear Minimum Pulse Width for Input DDR 0.22 ns tDDRICKMPWH Clock Minimum Pulse Width High for Input DDR 0.36 ns tDDRICKMPWL Clock Minimum Pulse Width Low for Input DDR 0.32 ns FDDRIMAX Maximum Frequency for Input DDR 350 MHz Note: For derating values at specific junction temperature and voltage-supply levels, refer to Table 2-7 on page 2-9 for derating values. 2- 52 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) Output DDR Module Output DDR A Data_F (from core) X FF1 B CLK CLKBUF E X C X D Data_R (from core) Out 0 X 1 X OUTBUF FF2 B X CLR INBUF C X DDR_OUT Figure 2-21 • Output DDR Timing Model Table 2-76 • Parameter Definitions Parameter Name Parameter Definition Measuring Nodes (from, to) tDDROCLKQ Clock-to-Out B, E tDDROCLR2Q Asynchronous Clear-to-Out C, E tDDROREMCLR Clear Removal C, B tDDRORECCLR Clear Recovery C, B tDDROSUD1 Data Setup Data_F A, B tDDROSUD2 Data Setup Data_R D, B tDDROHD1 Data Hold Data_F A, B tDDROHD2 Data Hold Data_R D, B R ev i si o n 1 0 2- 53 SmartFusion DC and Switching Characteristics CLK tDDROSUD2 tDDROHD2 1 Data_F 2 tDDROREMCLR Data_R 6 4 3 5 tDDROHD1 7 8 9 10 11 tDDRORECCLR tDDROREMCLR CLR tDDROCLR2Q Out tDDROCLKQ 7 2 8 3 9 4 10 Figure 2-22 • Output DDR Timing Diagram Timing Characteristics Table 2-77 • Output DDR Propagation Delays Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V Parameter Description –1 Units tDDROCLKQ Clock-to-Out of DDR for Output DDR 0.71 ns tDDROSUD1 Data_F Data Setup for Output DDR 0.38 ns tDDROSUD2 Data_R Data Setup for Output DDR 0.38 ns tDDROHD1 Data_F Data Hold for Output DDR 0.00 ns tDDROHD2 Data_R Data Hold for Output DDR 0.00 ns tDDROCLR2Q Asynchronous Clear-to-Out for Output DDR 0.81 ns tDDROREMCLR Asynchronous Clear Removal Time for Output DDR 0.00 ns tDDRORECCLR Asynchronous Clear Recovery Time for Output DDR 0.23 ns tDDROWCLR1 Asynchronous Clear Minimum Pulse Width for Output DDR 0.22 ns tDDROCKMPWH Clock Minimum Pulse Width High for the Output DDR 0.36 ns tDDROCKMPWL Clock Minimum Pulse Width Low for the Output DDR 0.32 ns FDDOMAX Maximum Frequency for the Output DDR 350 MHz Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values. 2- 54 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) VersaTile Characteristics VersaTile Specifications as a Combinatorial Module The SmartFusion library offers all combinations of LUT-3 combinatorial functions. In this section, timing characteristics are presented for a sample of the library. For more details, refer to the IGLOO/e, Fusion, ProASIC3/E, and SmartFusion Macro Library Guide. A A B A OR2 Y AND2 A Y B B B XOR2 A B C Y A A B C NOR2 B A A Y INV NAND3 A MAJ3 B Y NAND2 XOR3 Y Y 0 MUX2 B Y Y 1 C S Figure 2-23 • Sample of Combinatorial Cells R ev i si o n 1 0 2- 55 SmartFusion DC and Switching Characteristics tPD A NAND2 or Any Combinatorial Logic B Y tPD = MAX(tPD(RR), tPD(RF), tPD(FF), tPD(FR)) where edges are applicable for the particular combinatorial cell VCC 50% 50% A, B, C GND VCC 50% 50% OUT GND VCC tPD tPD (FF) (RR) tPD OUT (FR) 50% tPD GND (RF) Figure 2-24 • Timing Model and Waveforms 2- 56 R ev i sio n 1 0 50% SmartFusion Customizable System-on-Chip (cSoC) Timing Characteristics Table 2-78 • Combinatorial Cell Propagation Delays Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V Combinatorial Cell Equation Parameter –1 Std. Units Y = !A tPD 0.41 0.49 ns Y=A·B tPD 0.48 0.57 ns Y = !(A · B) tPD 0.48 0.57 ns Y=A+B tPD 0.49 0.59 ns NOR2 Y = !(A + B) tPD 0.49 0.59 ns XOR2 Y = A B tPD 0.75 0.90 ns MAJ3 Y = MAJ(A, B, C) tPD 0.71 0.85 ns XOR3 Y = A B C tPD 0.89 1.07 ns MUX2 Y = A !S + B S tPD 0.51 0.62 ns AND3 Y=A·B·C tPD 0.57 0.68 ns INV AND2 NAND2 OR2 Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values. VersaTile Specifications as a Sequential Module The SmartFusion library offers a wide variety of sequential cells, including flip-flops and latches. Each has a data input and optional enable, clear, or preset. In this section, timing characteristics are presented for a representative sample from the library. For more details, refer to the IGLOO/e, Fusion, ProASIC3/E, and SmartFusion Macro Library Guide. Data D Q Out Data En DFN1 D Out Q DFN1E1 CLK CLK PRE Data D Q Out Data En DFN1C1 D Q Out DFI1E1P1 CLK CLK CLR Figure 2-25 • Sample of Sequential Cells R ev i si o n 1 0 2- 57 SmartFusion DC and Switching Characteristics tCKMPWH tCKMPWL CLK 50% 50% tSUD 50% Data EN PRE 50% tRECPRE tREMPRE 50% 50% 50% CLR tPRE2Q 50% tREMCLR tRECCLR tWCLR Out 50% 50% 0 tWPRE tHE 50% 50% tHD 50% tSUE 50% 50% 50% 50% tCLR2Q 50% 50% tCLKQ Figure 2-26 • Timing Model and Waveforms Timing Characteristics Table 2-79 • Register Delays Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V Parameter Description –1 Std. Units tCLKQ Clock-to-Q of the Core Register 0.56 0.67 ns tSUD Data Setup Time for the Core Register 0.44 0.52 ns tHD Data Hold Time for the Core Register 0.00 0.00 ns tSUE Enable Setup Time for the Core Register 0.46 0.55 ns tHE Enable Hold Time for the Core Register 0.00 0.00 ns tCLR2Q Asynchronous Clear-to-Q of the Core Register 0.41 0.49 ns tPRE2Q Asynchronous Preset-to-Q of the Core Register 0.41 0.49 ns tREMCLR Asynchronous Clear Removal Time for the Core Register 0.00 0.00 ns tRECCLR Asynchronous Clear Recovery Time for the Core Register 0.23 0.27 ns tREMPRE Asynchronous Preset Removal Time for the Core Register 0.00 0.00 ns tRECPRE Asynchronous Preset Recovery Time for the Core Register 0.23 0.27 ns tWCLR Asynchronous Clear Minimum Pulse Width for the Core Register 0.22 0.22 ns tWPRE Asynchronous Preset Minimum Pulse Width for the Core Register 0.22 0.22 ns tCKMPWH Clock Minimum Pulse Width High for the Core Register 0.32 0.32 ns tCKMPWL Clock Minimum Pulse Width Low for the Core Register 0.36 0.36 ns Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values. 2- 58 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) Global Resource Characteristics A2F200 Clock Tree Topology Clock delays are device-specific. Figure 2-27 is an example of a global tree used for clock routing. The global tree presented in Figure 2-27 is driven by a CCC located on the west side of the A2F200 device. It is used to drive all D-flip-flops in the device. Central Global Rib VersaTile Rows CCC Global Spine Figure 2-27 • Example of Global Tree Use in an A2F200 Device for Clock Routing Global Tree Timing Characteristics Global clock delays include the central rib delay, the spine delay, and the row delay. Delays do not include I/O input buffer clock delays, as these are I/O standard–dependent, and the clock may be driven and conditioned internally by the CCC module. For more details on clock conditioning capabilities, refer to the "Clock Conditioning Circuits" section on page 2-63. Table 2-80 through Table 2-82 on page 2-61 present minimum and maximum global clock delays for the SmartFusion cSoCs. Minimum and maximum delays are measured with minimum and maximum loading. R ev i si o n 1 0 2- 59 SmartFusion DC and Switching Characteristics Timing Characteristics Table 2-80 • A2F500 Global Resource Worst Commercial-Case Conditions: TJ = 85°C, VCC = 1.425 V –1 1 Std. Max. 2 Max.2 Units 1.84 2.08 ns 1.84 2.12 ns Min. 1 Parameter Description Min. tRCKL Input Low Delay for Global Clock 1.54 1.73 tRCKH Input High Delay for Global Clock 1.53 1.76 tRCKMPWH Minimum Pulse Width High for Global Clock 0.85 1.00 ns tRCKMPWL Minimum Pulse Width Low for Global Clock 0.85 1.00 ns tRCKSW Maximum Skew for Global Clock 0.23 0.28 ns Notes: 1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential element, located in a lightly loaded row (single element is connected to the global net). 2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element, located in a fully loaded row (all available flip-flops are connected to the global net in the row). 3. For specific junction temperature and voltage-supply levels, refer to Table 2-7 on page 2-9 for derating values. Table 2-81 • A2F200 Global Resource Worst Commercial-Case Conditions: TJ = 85°C, VCC = 1.425 V –1 Std. Parameter Description Min.1 Max.2 Min.1 Max.2 Units tRCKL Input Low Delay for Global Clock 0.74 0.99 0.88 1.19 ns tRCKH Input High Delay for Global Clock 0.76 1.05 0.91 1.26 ns tRCKMPWH Minimum Pulse Width High for Global Clock 0.85 1.00 ns tRCKMPWL Minimum Pulse Width Low for Global Clock 0.85 1.00 ns tRCKSW Maximum Skew for Global Clock 0.29 0.35 ns Notes: 1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential element, located in a lightly loaded row (single element is connected to the global net). 2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element, located in a fully loaded row (all available flip-flops are connected to the global net in the row). 3. For specific junction temperature and voltage-supply levels, refer to Table 2-7 on page 2-9 for derating values. 2- 60 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) Table 2-82 • A2F060 Global Resource Worst Commercial-Case Conditions: TJ = 85°C, VCC = 1.425 V –1 1 Std. Max. 2 Max.2 Units 0.90 1.15 ns 0.86 1.17 ns Min. 1 Parameter Description Min. tRCKL Input Low Delay for Global Clock 0.75 0.96 tRCKH Input High Delay for Global Clock 0.72 0.98 tRCKMPWH Minimum Pulse Width High for Global Clock 0.85 1.00 ns tRCKMPWL Minimum Pulse Width Low for Global Clock 0.85 1.00 ns tRCKSW Maximum Skew for Global Clock 0.26 0.31 ns Notes: 1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential element, located in a lightly loaded row (single element is connected to the global net). 2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element, located in a fully loaded row (all available flip-flops are connected to the global net in the row). 3. For specific junction temperature and voltage-supply levels, refer to Table 2-7 on page 2-9 for derating values. RC Oscillator The table below describes the electrical characteristics of the RC oscillator. RC Oscillator Characteristics Table 2-83 • Electrical Characteristics of the RC Oscillator Parameter FRC Description Condition Min. Typ. Max. Units 100 MHz 1 % Period jitter (at 5 K cycles) 100 ps RMS Cycle-to-cycle jitter (at 5 K cycles) 100 ps RMS Period jitter (at 5 K cycles) with 1 KHz / 300 mV peak-to-peak noise on power supply 150 ps RMS Cycle-to-cycle jitter (at 5 K cycles) with 1 KHz / 300 mV peak-to-peak noise on power supply 150 ps RMS Output duty cycle 50 % Operating current 3.3 V domain 1 mA 1.5 V domain 2 mA Operating frequency Accuracy Temperature: –40°C to 100°C Voltage: 3.3 V ± 5% Output jitter IDYNRC R ev i si o n 1 0 2- 61 SmartFusion DC and Switching Characteristics Main and Lower Power Crystal Oscillator The tables below describes the electrical characteristics of the main and low power crystal oscillator. Table 2-84 • Electrical Characteristics of the Main Crystal Oscillator Parameter Description Operating frequency Condition Min. Using external crystal Using ceramic resonator Using RC Network Typ. Max. Units 0.032 20 MHz 0.5 8 MHz 0.032 4 MHz Output duty cycle IDYNXTAL ISTBXTAL 50 % Output jitter With 10 MHz crystal 1 ns RMS Operating current RC 0.6 mA 0.032–0.2 0.6 mA 0.2–2.0 0.6 mA 2.0–20.0 0.6 mA 10 µA 0.5 Vp-p Standby current of crystal oscillator PSRRXTAL Power supply noise tolerance VIHXTAL Input logic level High VILXTAL Input logic level Low Startup time 90% of VCC V 10% of VCC V RC [Tested at 3.24Mhz] 300 550 µs 0.032–0.2 [Tested at 32KHz] 500 3,000 µs 8 12 µs 160 180 µs 0.2–2.0 [Tested at 2MHz] 2.0–20.0 [Tested at 20MHz] Table 2-85 • Electrical Characteristics of the Low Power Oscillator Parameter Description Condition Min. Typ. Max. Units Operating frequency 32 KHz Output duty cycle 50 % Output jitter 30 ns RMS 10 µA ISTBXTAL Standby current of crystal oscillator 2 µA PSRRXTAL Power supply noise tolerance 0.5 Vp-p IDYNXTAL Operating current VIHXTAL Input logic level High VILXTAL Input logic level Low Startup time 2- 62 32 KHz 90% of VCC V 10% of VCC Test load used: 20 pF 2.5 Test load used: 30 pF 3.7 R ev i sio n 1 0 V s 13 s SmartFusion Customizable System-on-Chip (cSoC) Clock Conditioning Circuits CCC Electrical Specifications Timing Characteristics Table 2-86 • SmartFusion CCC/PLL Specification Parameter Minimum Typical Maximum Units Clock Conditioning Circuitry Input Frequency fIN_CCC 1.5 350 MHz Clock Conditioning Circuitry Output Frequency fOUT_CCC 0.75 3501 MHz Delay Increments in Programmable Delay Blocks2,3,4 160 ps Number of Programmable Values in Each Programmable Delay Block 32 Input Period Jitter 1.5 ns LockControl = 0 300 µs LockControl = 1 6.0 ms LockControl = 0 1.6 ns LockControl = 1 0.8 ns Acquisition Time Tracking Jitter5 Output Duty Cycle 48.5 5.15 % Delay Range in Block: Programmable Delay 12,3 0.6 5.56 ns Delay Range in Block: Programmable Delay 22,3 0.025 5.56 ns Delay Range in Block: Fixed Delay2,3 CCC Output Peak-to-Peak Period Jitter FCCC_OUT 2.2 6,7 ns Maximum Peak-to-Peak Period Jitter SSO 2 FG/CS PQ SSO 4 FG/CS PQ 0.75 MHz to 50 MHz 0.5% 1.6% 0.9% 1.6% 50 MHz to 250 MHz 1.75% 3.5% 9.3% 9.3% 250 MHz to 350 MHz 2.5% SSO 8 SSO 16 FG/CS PQ FG/CS PQ 0.9% 1.6% 0.9% 1.8% 9.3% 17.9% 10.0% 17.9% 5.2% 13.0% 13.0% 13.0% 25.0% 14.0% 25.0% Notes: 1. One of the CCC outputs (GLA0) is used as an MSS clock and is limited to 100 MHz (maximum) by software. Details regarding CCC/PLL are in the "PLLs, Clock Conditioning Circuitry, and On-Chip Crystal Oscillators" chapter of the SmartFusion Microcontroller Subsystem User's Guide. 2. This delay is a function of voltage and temperature. See Table 2-7 on page 2-9 for deratings. 3. TJ = 25°C, VCC = 1.5 V 4. When the CCC/PLL core is generated by Microsemi core generator software, not all delay values of the specified delay increments are available. Refer to the Libero SoC Online Help associated with the core for more information. 5. Tracking jitter is defined as the variation in clock edge position of PLL outputs with reference to the PLL input clock edge. Tracking jitter does not measure the variation in PLL output period, which is covered by the period jitter parameter. 6. Measurement done with LVTTL 3.3 V 12 mA I/O drive strength and High slew rate. VCC/VCCPLL = 1.425 V, VCCI = 3.3V, 20 pF output load. All I/Os are placed outside of the PLL bank. 7. SSOs are outputs that are synchronous to a single clock domain and have their clock-to-out within ± 200 ps of each other. 8. VCO output jitter is calculated as a percentage of the VCO frequency. The jitter (in ps) can be calculated by multiplying the VCO period by the % jitter. The VCO jitter (in ps) applies to CCC_OUT regardless of the output divider settings. For example, if the jitter on VCO is 300 ps, the jitter on CCC_OUT is also 300 ps. R ev i si o n 1 0 2- 63 SmartFusion DC and Switching Characteristics Output Signal Tperiod_max Tperiod_min Note: Peak-to-peak jitter measurements are defined by Tpeak-to-peak = Tperiod_max – Tperiod_min. Figure 2-28 • Peak-to-Peak Jitter Definition 2- 64 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) FPGA Fabric SRAM and FIFO Characteristics FPGA Fabric SRAM RAM512X18 RAM4K9 ADDRA11 ADDRA10 DOUTA8 DOUTA7 RADDR8 RADDR7 RD17 RD16 ADDRA0 DINA8 DINA7 DOUTA0 RADDR0 RD0 RW1 RW0 DINA0 WIDTHA1 WIDTHA0 PIPEA WMODEA BLKA WENA CLKA PIPE REN RCLK ADDRB11 ADDRB10 DOUTB8 DOUTB7 ADDRB0 DOUTB0 DINB8 DINB7 WADDR8 WADDR7 WADDR0 WD17 WD16 WD0 DINB0 WW1 WW0 WIDTHB1 WIDTHB0 PIPEB WMODEB BLKB WENB CLKB WEN WCLK RESET RESET Figure 2-29 • RAM Models R ev i si o n 1 0 2- 65 SmartFusion DC and Switching Characteristics Timing Waveforms tCYC tCKH tCKL CLK tAS tAH A1 A0 [R|W]ADDR A2 tBKS tBKH BLK tENS tENH WEN tCKQ1 DOUT|RD Dn D0 D1 D2 tDOH1 Figure 2-30 • RAM Read for Pass-Through Output. Applicable to both RAM4K9 and RAM512x18. tCYC tCKH tCKL CLK t AS tAH A1 A0 [R|W]ADDR A2 tBKS tBKH BLK tENH tENS WEN tCKQ2 DOUT|RD Dn D0 D1 tDOH2 Figure 2-31 • RAM Read for Pipelined Output Applicable to both RAM4K9 and RAM512x18. 2- 66 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) tCYC tCKH tCKL CLK tAS tAH A0 [R|W]ADDR A1 A2 tBKS tBKH BLK tENS tENH WEN tDS DI0 DIN|WD tDH DI1 D2 Dn DOUT|RD Figure 2-32 • RAM Write, Output Retained. Applicable to both RAM4K9 and RAM512x18. tCYC tCKH tCKL CLK tAS tAH A0 ADDR A1 A2 tBKS tBKH BLK tENS WEN tDS DI0 DIN DOUT (pass-through) DOUT (pipelined) tDH DI1 Dn DI2 DI1 DI0 DI0 Dn DI1 Figure 2-33 • RAM Write, Output as Write Data (WMODE = 1). Applicable to RAM4K9 only. R ev i si o n 1 0 2- 67 SmartFusion DC and Switching Characteristics tCYC tCKH tCKL CLK RESET tRSTBQ DOUT|RD Dm Dn Figure 2-34 • RAM Reset. Applicable to both RAM4K9 and RAM512x18. 2- 68 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) Timing Characteristics Table 2-87 • RAM4K9 Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V Parameter Description –1 Std. Units tAS Address setup time 0.25 0.30 ns tAH Address hold time 0.00 0.00 ns tENS REN, WEN setup time 0.15 0.17 ns tENH REN, WEN hold time 0.10 0.12 ns tBKS BLK setup time 0.24 0.28 ns tBKH BLK hold time 0.02 0.02 ns tDS Input data (DIN) setup time 0.19 0.22 ns tDH Input data (DIN) hold time 0.00 0.00 ns tCKQ1 Clock High to new data valid on DOUT (output retained, WMODE = 0) 1.81 2.18 ns Clock High to new data valid on DOUT (flow-through, WMODE = 1) 2.39 2.87 ns tCKQ2 Clock High to new data valid on DOUT (pipelined) 0.91 1.09 ns 1 Address collision clk-to-clk delay for reliable write after write on same address—applicable to rising edge 0.23 0.26 ns tC2CRWH1 Address collision clk-to-clk delay for reliable read access after write on same address—applicable to opening edge 0.34 0.38 ns tC2CWRH1 Address collision clk-to-clk delay for reliable write access after read on same address— applicable to opening edge 0.37 0.42 ns tRSTBQ RESET Low to data out Low on DOUT (flow-through) 0.94 1.12 ns RESET Low to Data Out Low on DOUT (pipelined) 0.94 1.12 ns tREMRSTB RESET removal 0.29 0.35 ns tRECRSTB RESET recovery 1.52 1.83 ns tMPWRSTB RESET minimum pulse width 0.22 0.22 ns tCYC Clock cycle time 3.28 3.28 ns FMAX Maximum clock frequency 305 305 MHz tC2CWWH Notes: 1. For more information, refer to the Simultaneous Read-Write Operations in Dual-Port SRAM for Flash-Based cSoCs and FPGAs application note. 2. For the derating values at specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values. R ev i si o n 1 0 2- 69 SmartFusion DC and Switching Characteristics Table 2-88 • RAM512X18 Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V Parameter Description –1 Std. Units tAS Address setup time 0.25 0.30 ns tAH Address hold time 0.00 0.00 ns tENS REN, WEN setup time 0.09 0.11 ns tENH REN, WEN hold time 0.06 0.07 ns tDS Input data (WD) setup time 0.19 0.22 ns tDH Input data (WD) hold time 0.00 0.00 ns tCKQ1 Clock High to new data valid on RD (output retained, WMODE = 0) 2.19 2.63 ns Clock High to new data valid on RD (pipelined) 0.91 1.09 ns 1 Address collision clk-to-clk delay for reliable read access after write on same address—applicable to opening edge 0.38 0.43 ns tC2CWRH1 Address collision clk-to-clk delay for reliable write access after read on same address—applicable to opening edge 0.44 0.50 ns tRSTBQ RESET Low to data out Low on RD (flow-through) 0.94 1.12 ns RESET Low to data out Low on RD (pipelined) 0.94 1.12 ns tREMRSTB RESET removal 0.29 0.35 ns tRECRSTB RESET recovery 1.52 1.83 ns tMPWRSTB RESET minimum pulse width 0.22 0.22 ns tCYC Clock cycle time 3.28 3.28 ns FMAX Maximum clock frequency 305 305 MHz tCKQ2 tC2CRWH Notes: 1. For more information, refer to the Simultaneous Read-Write Operations in Dual-Port SRAM for Flash-Based cSoCs and FPGAs application note. 2. For the derating values at specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values. 2- 70 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) FIFO FIFO4K18 RW2 RW1 RW0 WW2 WW1 WW0 ESTOP FSTOP RD17 RD16 RD0 FULL AFULL EMPTY AEMPTY AEVAL11 AEVAL10 AEVAL0 AFVAL11 AFVAL10 AFVAL0 REN RBLK RCLK WD17 WD16 WD0 WEN WBLK WCLK RPIPE RESET Figure 2-35 • FIFO Model R ev i si o n 1 0 2- 71 SmartFusion DC and Switching Characteristics Timing Waveforms tCYC RCLK tENH tENS REN tBKH tBKS RBLK tCKQ1 RD (flow-through) Dn D0 D1 D2 D0 D1 tCKQ2 RD (pipelined) Dn Figure 2-36 • FIFO Read tCYC WCLK tENS tENH WEN WBLK tBKS tBKH tDS WD DI0 tDH DI1 Figure 2-37 • FIFO Write 2- 72 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) RCLK/ WCLK tMPWRSTB tRSTCK RESET tRSTFG EMPTY tRSTAF AEMPTY tRSTFG FULL tRSTAF AFULL WA/RA (Address Counter) MATCH (A0) Figure 2-38 • FIFO Reset tCYC RCLK tRCKEF EMPTY tCKAF AEMPTY WA/RA (Address Counter) NO MATCH NO MATCH Dist = AEF_TH MATCH (EMPTY) Figure 2-39 • FIFO EMPTY Flag and AEMPTY Flag Assertion R ev i si o n 1 0 2- 73 SmartFusion DC and Switching Characteristics tCYC WCLK tWCKFF FULL tCKAF AFULL WA/RA NO MATCH (Address Counter) NO MATCH Dist = AFF_TH MATCH (FULL) Figure 2-40 • FIFO FULL Flag and AFULL Flag Assertion WCLK WA/RA MATCH (Address Counter) (EMPTY) RCLK NO MATCH 1st Rising Edge After 1st Write NO MATCH NO MATCH NO MATCH Dist = AEF_TH + 1 2nd Rising Edge After 1st Write tRCKEF EMPTY tCKAF AEMPTY Figure 2-41 • FIFO EMPTY Flag and AEMPTY Flag Deassertion RCLK WA/RA MATCH (FULL) NO MATCH (Address Counter) 1st Rising Edge After 1st WCLK Read NO MATCH NO MATCH NO MATCH Dist = AFF_TH – 1 1st Rising Edge After 2nd Read tWCKF FULL tCKAF AFULL Figure 2-42 • FIFO FULL Flag and AFULL Flag Deassertion 2- 74 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) Timing Characteristics Table 2-89 • FIFO Worst Commercial-Case Conditions: TJ = 85°C, VCC = 1.425 V Parameter Description –1 Std. Units tENS REN, WEN Setup Time 1.40 1.68 ns tENH REN, WEN Hold Time 0.02 0.02 ns tBKS BLK Setup Time 0.19 0.19 ns tBKH BLK Hold Time 0.00 0.00 ns tDS Input Data (WD) Setup Time 0.19 0.22 ns tDH Input Data (WD) Hold Time 0.00 0.00 ns tCKQ1 Clock High to New Data Valid on RD (flow-through) 2.39 2.87 ns tCKQ2 Clock High to New Data Valid on RD (pipelined) 0.91 1.09 ns tRCKEF RCLK High to Empty Flag Valid 1.74 2.09 ns tWCKFF WCLK High to Full Flag Valid 1.66 1.99 ns tCKAF Clock HIGH to Almost Empty/Full Flag Valid 6.29 7.54 ns tRSTFG RESET Low to Empty/Full Flag Valid 1.72 2.06 ns tRSTAF RESET Low to Almost Empty/Full Flag Valid 6.22 7.47 ns tRSTBQ RESET Low to Data Out Low on RD (flow-through) 0.94 1.12 ns RESET Low to Data Out Low on RD (pipelined) 0.94 1.12 ns tREMRSTB RESET Removal 0.29 0.35 ns tRECRSTB RESET Recovery 1.52 1.83 ns tMPWRSTB RESET Minimum Pulse Width 0.22 0.22 ns tCYC Clock Cycle Time 3.28 3.28 ns FMAX Maximum Frequency for FIFO 305 305 MHz Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values. Embedded Nonvolatile Memory Block (eNVM) Electrical Characteristics Table 2-90 describes the eNVM maximum performance. Table 2-90 • eNVM Block Timing, Worst Commercial Case Conditions: TJ = 85°C, VCC = 1.425 V A2F060 Parameter Description A2F200 A2F500 –1 Std. –1 Std. –1 80 80 80 80 50 50 MHz tFMAXCLKeNVM Maximum frequency for clock for the control logic – 6 100 cycles (6:1:1:1*) 80 100 80 100 80 MHz tFMAXCLKeNVM Maximum frequency for clock for the control logic – 5 cycles (5:1:1:1*) Std. Units Note: *6:1:1:1 indicates 6 cycles for the first access and 1 each for the next three accesses. 5:1:1:1 indicates 5 cycles for the first access and 1 each for the next three accesses. R ev i si o n 1 0 2- 75 SmartFusion DC and Switching Characteristics Embedded FlashROM (eFROM) Electrical Characteristics Table 2-91 describes the eFROM maximum performance Table 2-91 • FlashROM Access Time, Worse Commercial Case Conditions: TJ = 85°C, VCC = 1.425 V Parameter Description –1 Std. Units tCK2Q Clock to out per configuration* 28.68 32.98 ns Fmax Maximum Clock frequency 15.00 15.00 MHz JTAG 1532 Characteristics JTAG timing delays do not include JTAG I/Os. To obtain complete JTAG timing, add I/O buffer delays to the corresponding standard selected; refer to the I/O timing characteristics in the "User I/O Characteristics" section on page 2-19 for more details. Timing Characteristics Table 2-92 • JTAG 1532 Worst Commercial-Case Conditions: TJ = 85°C, Worst-Case VCC = 1.425 V Parameter Description –1 Std. Units tDISU Test Data Input Setup Time 0.67 0.77 ns tDIHD Test Data Input Hold Time 1.33 1.53 ns tTMSSU Test Mode Select Setup Time 0.67 0.77 ns tTMDHD Test Mode Select Hold Time 1.33 1.53 ns tTCK2Q Clock to Q (data out) 8.00 9.20 ns tRSTB2Q Reset to Q (data out) 26.67 30.67 ns FTCKMAX TCK Maximum Frequency 19.00 21.85 MHz tTRSTREM ResetB Removal Time 0.00 0.00 ns tTRSTREC ResetB Recovery Time 0.27 0.31 ns tTRSTMPW ResetB Minimum Pulse TBD TBD ns Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-9 for derating values. 2- 76 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) Programmable Analog Specifications Current Monitor Unless otherwise noted, current monitor performance is specified at 25°C with nominal power supply voltages, with the output measured using the internal voltage reference with the internal ADC in 12-bit mode and 91 Ksps, after digital compensation. All results are based on averaging over 16 samples. Table 2-93 • Current Monitor Performance Specification Specification Test Conditions Input voltage range (for driving ADC over full range) Min. Typical Max. Units 0 – 48 0 – 50 1 – 51 mV Analog gain From the differential voltage across the input pads to the ADC input Input referred offset voltage Input referred offset voltage 0 0.1 0.5 mV –40ºC to +100ºC 0 0.1 0.5 mV ±0.1 ±0.5 % nom. ±0.5 % nom. Gain error 50 Slope of BFSL vs. 50 V/V –40ºC to +100ºC Overall Accuracy Peak error from ideal transfer function, 25°C ±(0.1 + 0.25%) Input referred noise 0 VDC input (no output averaging) 0.3 0.4 Common-mode rejection ratio 0 V to 12 VDC common-mode voltage –86 –87 Analog settling time To 0.1% of final value (with ADC load) From CM_STB (High) 5 From ADC_START (High) 5 Input capacitance Input biased current V/V ±(0.4 + mV plus 1.5%) % reading 0.5 mVrms dB µs 200 µs 8 pF Strobe = 0; IBIAS on CM[n] 0 µA Strobe = 1; IBIAS on CM[n] 1 µA Strobe = 0; IBIAS on TM[n] 2 µA Strobe = 1; IBIAS on TM[n] 1 µA 42 dB 150 µA 140 µA 50 µA CM[n] or TM[n] pad, –40°C to +100°C over maximum input voltage range (plus is into pad) Power supply rejection ratio DC (0 – 10 KHz) 41 Incremental operational current VCC33A monitor power supply current VCC33AP requirements (per current monitor instance, not including ADC or VCC15A VAREFx) Note: Under no condition should the TM pad ever be greater than 10 mV above the CM pad. This restriction is applicable only if current monitor is used. R ev i si o n 1 0 2- 77 SmartFusion DC and Switching Characteristics Temperature Monitor Unless otherwise noted, temperature monitor performance is specified with a 2N3904 diode-connected bipolar transistor from National Semiconductor or Infineon Technologies, nominal power supply voltages, with the output measured using the internal voltage reference with the internal ADC in 12-bit mode and 62.5 Ksps. After digital compensation. Unless otherwise noted, the specifications pertain to conditions where the SmartFusion cSoC and the sensing diode are at the same temperature. Table 2-94 • Temperature Monitor Performance Specifications Specification Test Conditions Input diode temperature range Min. Max. Units –55 150 °C 233.2 378.15 K Temperature sensitivity Typical 2.5 mV/K Extrapolated to 0K 0 V Input referred temperature offset At 25°C (298.15K) error ±1 1.5 °C Gain error Slope of BFSL vs. 2.5 mV/K ±1 2.5 % nom. Overall accuracy Peak error from ideal transfer function ±2 ±3 °C Input referred noise At 25°C (298.15K) – no output averaging 4 °C rms Output current Idle mode 100 µA Final measurement phases 10 µA Intercept Analog settling time Measured to 0.1% of final value, (with ADC load) From TM_STB (High) 5 From ADC_START (High) 5 µs AT parasitic capacitance Power supply rejection ratio DC (0–10 KHz) 1.2 Input referred temperature sensitivity error Variation due to device temperature (–40°C to +100°C). External temperature sensor held constant. Temperature monitor (TM) VCC33A operational power supply current VCC33AP requirements (per temperature monitor instance, not including ADC VCC15A or VAREFx) Note: All results are based on averaging over 64 samples. 2- 78 R ev i sio n 1 0 105 µs 500 pF 0.7 0.005 °C/V 0.008 °C/°C 200 µA 150 µA 50 µA SmartFusion Customizable System-on-Chip (cSoC) 1 0 Temperature Error (°C) -1 -2 -3 -4 -5 -6 -7 1.00E -06 1.00E -05 1.00E -04 1.00E -03 1.00E -02 1.00E -01 1.00E+00 Capacitance (μF) Figure 2-43 • Temperature Error Versus External Capacitance R ev i si o n 1 0 2- 79 SmartFusion DC and Switching Characteristics Analog-to-Digital Converter (ADC) Unless otherwise noted, ADC direct input performance is specified at 25°C with nominal power supply voltages, with the output measured using the external voltage reference with the internal ADC in 12-bit mode and 500 KHz sampling frequency, after trimming and digital compensation. Table 2-95 • ADC Specifications Specification Test Conditions Min. Typ. Max. Units Input voltage range (for driving ADC over its full range) 2.56 Gain error ±0.4 ±0.7 % ±0.4 ±0.7 % ±1 ±2 mV ±1 ±2 –40ºC to +100ºC Input referred offset voltage –40ºC to +100ºC Integral non-linearity (INL) V RMS deviation from BFSL Differential non-linearity (DNL) 12-bit mode 1.71 10-bit mode 0.60 1.00 LSB 8-bit mode 0.2 0.33 LSB 12-bit mode 2.4 10-bit mode 0.80 0.94 LSB 8-bit mode 0.2 0.23 LSB Signal to noise ratio LSB LSB 62 64 dB 12-bit mode 10 KHz 9.9 10 Bits 12-bit mode 100 KHz 9.9 10 Bits 10-bit mode 10 KHz 9.5 9.6 Bits 10-bit mode 100 KHz 9.5 9.6 Bits 8-bit mode 10 KHz 7.8 7.9 Bits 8-bit mode 100 KHz 7.8 7.9 Bits Full power bandwidth At –3 dB; –1 dBFS input 300 Analog settling time To 0.1% of final value (with 1 Kohm source impedance and with ADC load) 2 Input capacitance Switched capacitance capacitor) 12 15 pF CM[n] input 5 7 pF TM[n] input 5 7 pF ADC[n] input 5 7 pF Effective number of bits (ENOB) –1 dBFS input SINAD – 1.76 dB ENOB = --------------------------------------------6.02 dB/bit EQ 10 (ADC sample KHz µs Cs: Static capacitance (Figure 2-44 on page 2-81) Input resistance Rin: Series resistance (Figure 2-44) Rsh: Shunt resistance, exclusive of switched capacitance effects (Figure 2-44) 2 10 Note: All 3.3 V supplies are tied together and varied from 3.0 V to 3.6 V. 1.5 V supplies are held constant. 2- 80 R ev i sio n 1 0 K M SmartFusion Customizable System-on-Chip (cSoC) Table 2-95 • ADC Specifications (continued) Specification Test Conditions Input leakage current –40°C to +100°C Power supply rejection ratio DC Min. 44 Typ. Max. Units 1 µA 53 dB ADC power supply operational current VCC33ADCx requirements VCC15A 2.5 mA 2 mA Note: All 3.3 V supplies are tied together and varied from 3.0 V to 3.6 V. 1.5 V supplies are held constant. Rin Cst Csw Rsh Figure 2-44 • ADC Input Model Table 2-96 • VAREF Stabilization Time Required Settling Time for 8-Bit and 10-Bit Mode (ms) Required Settling Time for 12-Bit Mode (ms) 0.01 1 1 0.1 3 4 0.2 6 8 0.3 10 11 0.5 17 20 0.7 18 21 1 32 37 VAREF Capacitor Value (µF) 2.2 62 73 3.3 99 117 10 275 325 22 635 751 47 1318 1557 R ev i si o n 1 0 2- 81 SmartFusion DC and Switching Characteristics Analog Bipolar Prescaler (ABPS) With the ABPS set to its high range setting (GDEC = 00), a hypothetical input voltage in the range –15.36 V to +15.36 V is scaled and offset by the ABPS input amplifier to match the ADC full range of 0 V to 2.56 V using a nominal gain of –0.08333 V/V. However, due to reliability considerations, the voltage applied to the ABPS input should never be outside the range of –11.5 V to +14.4 V, restricting the usable ADC input voltage to 2.238 V to 0.080 V and the corresponding 12-bit output codes to the range of 3581 to 128 (decimal), respectively. Unless otherwise noted, ABPS performance is specified at 25°C with nominal power supply voltages, with the output measured using the internal voltage reference with the internal ADC in 12-bit mode and 100 KHz sampling frequency, after trimming and digital compensation; and applies to all ranges. Table 2-97 • ABPS Performance Specifications Specification Test Conditions Min. Typ. Max. Units Input voltage range (for driving ADC GDEC[1:0] = 11 over its full range) GDEC[1:0] = 10 ±2.56 V ±5.12 V GDEC[1:0] = 01 ±10.24 V See note 1 V GDEC[1:0] = 00 maximum rating) (limited by Analog gain (from input pad to ADC GDEC[1:0] = 11 input) GDEC[1:0] = 10 –0.5 V/V –0.25 V/V GDEC[1:0] = 01 –0.125 V/V GDEC[1:0] = 00 –0.0833 V/V Gain error –2.8 –0.4 0.7 % –40ºC to +100ºC –2.8 –0.4 0.7 % GDEC[1:0] = 11 –0.31 –0.07 0.31 % FS* 1.47 % FS* 0.34 % FS* 1.37 % FS* 0.35 % FS* 1.35 % FS* 0.35 % FS* 1.38 % FS* Input referred offset voltage –40ºC to +100ºC GDEC[1:0] = 10 –0.34 –40ºC to +100ºC GDEC[1:0] = 01 GDEC[1:0] = 00 SINAD –0.07 –1.06 53 RMS deviation from BFSL –0.07 –1.05 –0.39 –40ºC to +100ºC –0.07 –0.90 –0.61 –40ºC to +100ºC Non-linearity –1.00 56 dB 0.5 % FS* Note: *FS is full-scale error, defined as the difference between the actual value that triggers the transition to full-scale and the ideal analog full-scale transition value. Full-scale error equals offset error plus gain error. Refer to the Analog-to-Digital Converter chapter of the SmartFusion Programmable Analog User’s Guide for more information. 2- 82 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) Table 2-97 • ABPS Performance Specifications (continued) Specification Test Conditions Effective number of bits (ENOB) Min. Typ. Max. Units 12-bit mode 10 KHz 8.6 9.1 Bits 12-bit mode 100 KHz 8.6 9.1 Bits 10-bit mode 10 KHz 8.5 8.9 Bits 10-bit mode 100 KHz 8.5 8.9 Bits 8-bit mode 10 KHz 7.7 7.8 Bits 8-bit mode 100 KHz 7.7 7.8 Bits 1 MHz GDEC[1:0] = 11 (±2.56 range), –1 dBFS input SINAD – 1.76 dB ENOB = --------------------------------------------6.02 dB/bit EQ 11 Large-signal bandwidth –1 dBFS input Analog settling time To 0.1% of final value (with ADC load) 10 Input resistance Power supply rejection ratio DC (0–1 KHz) ABPS power supply current requirements (not including ADC or VAREFx) ABPS_EN = 1 (operational mode) 38 µs 1 M 40 dB VCC33A 123 134 µA VCC33AP 89 94 µA VCC15A 1 µA Note: *FS is full-scale error, defined as the difference between the actual value that triggers the transition to full-scale and the ideal analog full-scale transition value. Full-scale error equals offset error plus gain error. Refer to the Analog-to-Digital Converter chapter of the SmartFusion Programmable Analog User’s Guide for more information. R ev i si o n 1 0 2- 83 SmartFusion DC and Switching Characteristics Comparator Unless otherwise specified, performance is specified at 25°C with nominal power supply voltages. Table 2-98 • Comparator Performance Specifications Specification Test Conditions Input voltage range Minimum 0 V Maximum 2.56 V Input offset voltage Min. HYS[1:0] = 00 Typ. Max. Units ±1 ±3 mV Comparator 1, 3, 5, 7, 9 (measured at 2.56 V) 40 100 nA Comparator 0, 2, 4, 6, 8 (measured at 2.56 V) 150 300 nA (no hysteresis) Input bias current Input resistance 10 Power supply rejection ratio DC (0 – 10 KHz) Propagation delay 100 mV overdrive 50 M 60 dB HYS[1:0] = 00 (no hysteresis) 15 18 ns 25 30 ns 0 ±5 mV ±5 mV ±30 mV ±36 mV ±48 mV ±54 mV ±190 mV ±194 mV 100 mV overdrive HYS[1:0] = 10 (with hysteresis) Hysteresis (± refers to rising and falling threshold shifts, respectively) HYS[1:0] = 00 Typical (25°C) Across all corners (–40ºC to +100ºC) HYS[1:0] = 01 Typical (25°C) Across all corners (–40ºC to +100ºC) HYS[1:0] = 10 Typical (25°C) Across all corners (–40ºC to +100ºC) HYS[1:0] = 11 Typical (25°C) Across all corners (–40ºC to +100ºC) Comparator current requirements (per comparator) 0 ±3 ± 16 0 ±19 ± 31 ±12 ±80 ± 105 ±80 VCC33A = 3.3 V (operational mode); COMP_EN = 1 VCC33A 150 165 µA VCC33AP 140 165 µA 1 3 µA VCC15A 2- 84 0 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) Analog Sigma-Delta Digital to Analog Converter (DAC) Unless otherwise noted, sigma-delta DAC performance is specified at 25°C with nominal power supply voltages, using the internal sigma-delta modulators with 16-bit inputs, HCLK = 100 MHz, modulator inputs updated at a 100 KHz rate, in voltage output mode with an external 160 pF capacitor to ground, after trimming and digital [pre-]compensation. Table 2-99 • Analog Sigma-Delta DAC Specification Test Conditions Resolution Min. 8 Output range Current output mode Output Impedance 6 Current output mode Output voltage compliance Voltage output mode Bits V 0 to 256 µA 10 12 K M V 0–3.4 V 0.3 ±2 % A2F060: –40ºC to +100ºC 0.3 ±2 % A2F200: –40ºC to +100ºC 1.2 ±5.3 % A2F500: –40ºC to +100ºC 0.3 ±2 % 0.3 ±2 % 0.3 ±2 % A2F200: –40ºC to +100ºC 1.2 ±5.3 % A2F500: –40ºC to +100ºC 0.3 ±2 % 0.25 ±1 mV DACBYTE0 = h’00 (8-bit) –40ºC to +100ºC Current output mode –40ºC to +100ºC RMS deviation from BFSL Differential non-linearity Analog settling time Power supply rejection ratio 24 0 to 2.56 0–2.7 A2F060: –40ºC to +100ºC Integral non-linearity Units 0–3.0 Current output mode Output referred offset Max. 10 Current output mode –40ºC to +100ºC Gain error Typ. DC, full scale output 33 1 ±2.5 mV 0.3 ±1 µA 1 ±2.5 µA 0.1 0.3 % FS* 0.05 0.4 % FS* Refer to Figure 2-45 on page 2-86 µs 34 dB Note: *FS is full-scale error, defined as the difference between the actual value that triggers the transition to full-scale and the ideal analog full-scale transition value. Full-scale error equals offset error plus gain error. Refer to the Analog-to-Digital Converter chapter of the SmartFusion Programmable Analog User’s Guide for more information. R ev i si o n 1 0 2- 85 SmartFusion DC and Switching Characteristics Table 2-99 • Analog Sigma-Delta DAC (continued) Specification Test Conditions Min. Typ. Max. Units VCC33SDDx 30 35 µA VCC15A 3 5 µA VCC33SDDx 160 165 µA VCC15A 33 35 µA VCC33SDDx 280 285 µA VCC15A 70 75 µA Sigma-delta DAC power supply current Input = 0, EN = 1 requirements (not including VAREFx) (operational mode) Input = Half scale, EN = 1 (operational mode) Input = Full scale, EN = 1 (operational mode) Note: *FS is full-scale error, defined as the difference between the actual value that triggers the transition to full-scale and the ideal analog full-scale transition value. Full-scale error equals offset error plus gain error. Refer to the Analog-to-Digital Converter chapter of the SmartFusion Programmable Analog User’s Guide for more information. Sigma Delta DAC Settling Time 220 200 180 Settling Time (us) 160 140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 7 8 9 Input Code Figure 2-45 • Sigma-Delta DAC Setting Time 2- 86 R ev i sio n 1 0 10 32 48 64 128 255 SmartFusion Customizable System-on-Chip (cSoC) Voltage Regulator Table 2-100 • Voltage Regulator Symbol Parameter Test Conditions VOUT Output voltage VOS Output offset voltage TJ = 25°C ICC33A Operation current TJ = 25°C TJ = 25°C Min. Typ. Max. Unit 1.425 1.5 1.575 V 11 mV ILOAD = 1 mA 3.4 mA ILOAD = 100 mA 11 mA ILOAD = 0.5 A 21 mA VOUT Load regulation TJ = 25°C ILOAD = 1 mA to 0.5 A 5.8 mV VOUT Line regulation TJ = 25°C VCC33A = 2.97 V to 3.63 V 5.3 mV/V 5.3 mV/V 5.3 mV/V ILOAD = 1 mA 0.63 V ILOAD = 100 mA 0.84 V ILOAD = 0.5 A 1.35 V ILOAD = 1 mA 48 µA ILOAD = 100 mA 736 µA ILOAD = 0.5 A 12 mA 200 µs ILOAD = 1 mA VCC33A = 2.97 V to 3.63 V ILOAD= 100 mA VCC33A = 2.97 V to 3.63 V ILOAD = 500mA Dropout voltage1 IPTBASE PTBase current 2 Startup time TJ = 25°C TJ = 25°C TJ = 25°C Notes: 1. Dropout voltage is defined as the minimum VCC33A voltage. The parameter is specified with respect to the output voltage. The specification represents the minimum input-to-output differential voltage required to maintain regulation. 2. Assumes 10 µF. R ev i si o n 1 0 2- 87 SmartFusion DC and Switching Characteristics Typical Output Voltage 0.015 Load = 10 mA 0.01 Load = 100 mA Offset Voltage (V) 0.005 Load = 500 mA 0 -0.005 -0.01 -0.015 -0.02 -0.025 -40 -20 0 20 40 60 80 100 Temperature (°C) Figure 2-46 • Typical Output Voltage Change in Output Voltage with Load (mV) Load Regulation 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -40 -20 0 20 40 Temperature (°C) Figure 2-47 • Load Regulation 2- 88 R ev i sio n 1 0 60 80 100 SmartFusion Customizable System-on-Chip (cSoC) Serial Peripheral Interface (SPI) Characteristics This section describes the DC and switching of the SPI interface. Unless otherwise noted, all output characteristics given for a 35 pF load on the pins and all sequential timing characteristics are related to SPI_x_CLK. For timing parameter definitions, refer to Figure 2-48 on page 2-90. Table 2-101 • SPI Characteristics Commercial Case Conditions: TJ = 85ºC, VDD = 1.425 V, –1 Speed Grade Symbol sp1 sp2 sp3 Description and Condition A2F060 A2F200 A2F500 Unit SPI_x_CLK = PCLK/2 20 NA 20 ns SPI_x_CLK = PCLK/4 40 40 40 ns SPI_x_CLK = PCLK/8 80 80 80 ns SPI_x_CLK = PCLK/16 0.16 0.16 0.16 µs SPI_x_CLK = PCLK/32 0.32 0.32 0.32 µs SPI_x_CLK = PCLK/64 0.64 0.64 0.64 µs SPI_x_CLK = PCLK/128 1.28 1.28 1.28 µs SPI_x_CLK = PCLK/256 2.56 2.56 2.56 µs SPI_x_CLK = PCLK/2 10 NA 10 ns SPI_x_CLK = PCLK/4 20 20 20 ns SPI_x_CLK = PCLK/8 40 40 40 ns SPI_x_CLK = PCLK/16 0.08 0.08 0.08 µs SPI_x_CLK = PCLK/32 0.16 0.16 0.16 µs SPI_x_CLK = PCLK/64 0.32 0.32 0.32 µs SPI_x_CLK = PCLK/128 0.64 0.64 0.64 µs SPI_x_CLK = PCLK/256 1.28 1.28 1.28 us SPI_x_CLK = PCLK/2 10 NA 10 ns SPI_x_CLK = PCLK/4 20 20 20 ns SPI_x_CLK = PCLK/8 40 40 40 ns SPI_x_CLK = PCLK/16 0.08 0.08 0.08 µs SPI_x_CLK = PCLK/32 0.16 0.16 0.16 µs SPI_x_CLK = PCLK/64 0.32 0.32 0.32 µs SPI_x_CLK = PCLK/128 0.64 0.64 0.64 µs 1.28 1.28 1.28 µs 4.7 4.7 4.7 ns 3.4 3.4 3.4 ns SPI_x_CLK minimum period SPI_x_CLK minimum pulse width high SPI_x_CLK minimum pulse width low SPI_x_CLK = PCLK/256 sp4 sp5 SPI_x_CLK, SPI_x_DO, SPI_x_SS rise time (10%-90%) SPI_x_CLK, SPI_x_DO, SPI_x_SS fall time (10%-90%) 1 1 Notes: 1. These values are provided for a load of 35 pF. For board design considerations and detailed output buffer resistances, use the corresponding IBIS models located on the Microsemi SoC Products Group website: http://www.microsemi.com/soc/download/ibis/default.aspx. 2. For allowable pclk configurations, refer to the Serial Peripheral Interface Controller section in the SmartFusion Microcontroller Subsystem User’s Guide. R ev i si o n 1 0 2- 89 SmartFusion DC and Switching Characteristics Table 2-101 • SPI Characteristics Commercial Case Conditions: TJ = 85ºC, VDD = 1.425 V, –1 Speed Grade (continued) Symbol Description and Condition sp6 Data from master (SPI_x_DO) setup time sp7 2 Data from master (SPI_x_DO) hold time sp8 SPI_x_DI setup time sp9 2 SPI_x_DI hold time A2F060 A2F200 A2F500 Unit 1 1 1 pclk cycles 1 1 1 pclk cycles 1 1 1 pclk cycles 1 1 1 pclk cycles 2 2 Notes: 1. These values are provided for a load of 35 pF. For board design considerations and detailed output buffer resistances, use the corresponding IBIS models located on the Microsemi SoC Products Group website: http://www.microsemi.com/soc/download/ibis/default.aspx. 2. For allowable pclk configurations, refer to the Serial Peripheral Interface Controller section in the SmartFusion Microcontroller Subsystem User’s Guide. SP1 SP4 SP2 SP5 SP3 90% 50% 50% SPI_x_CLK SPO = 0 50% 10% 10% SPI_x_CLK SPO = 1 90% 90% SPI_x_SS 10% 1 0% SP4 SP5 SP6 SP7 90% 9 0% SPI_x_DO 5 0% 5 0% 10% SP8 SPI_x_DI MSB 50% SP9 MSB SP5 10% SP4 50% Figure 2-48 • SPI Timing for a Single Frame Transfer in Motorola Mode (SPH = 1) 2- 90 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) Inter-Integrated Circuit (I2C) Characteristics This section describes the DC and switching of the IC interface. Unless otherwise noted, all output characteristics given are for a 100 pF load on the pins. For timing parameter definitions, refer to Figure 249 on page 2-92. Table 2-102 • I2C Characteristics Commercial Case Conditions: TJ = 85ºC, VDD = 1.425 V, –1 Speed Grade Parameter Condition Value Unit Minimum input low voltage – SeeTable 2-36 on page 2-30 – Maximum input low voltage – See Table 2-36 – Minimum input high voltage – See Table 2-36 – Maximum input high voltage – See Table 2-36 – VOL Maximum output voltage low IOL = 8 mA See Table 2-36 – IIL Input current high – See Table 2-36 – IIH Input current low – See Table 2-36 – Vhyst Hysteresis of Schmitt trigger inputs – See Table 2-33 on page 2-29 V TFALL Fall time 2 VIHmin to VILMax, Cload = 400 pF 15.0 ns VIHmin to VILMax, Cload = 100 pF 4.0 ns VILMax to VIHmin, Cload = 400pF 19.5 ns VILMax to VIHmin, Cload = 100pF 5.2 ns VIN = 0, f = 1.0 MHz 8.0 pF VIL VIH TRISE Definition Rise time 2 Cin Pin capacitance Rpull-up Output buffer maximum pulldown Resistance 1 – 50 Rpull-down Output buffer maximum pull-up Resistance 1 – 150 Dmax Maximum data rate Fast mode 400 Kbps tLOW Low period of I2C_x_SCL 3 – 1 pclk cycles tHIGH 3 – 1 pclk cycles – 1 pclk cycles – 1 pclk cycles – 1 pclk cycles – 1 pclk cycles tHD;STA High period of I2C_x_SCL START hold time 3 tSU;STA START setup time tHD;DAT DATA hold time 3 tSU;DAT DATA setup time 3 3 Notes: 1. These maximum values are provided for information only. Minimum output buffer resistance values depend on VCCxxxxIOBx, drive strength selection, temperature, and process. For board design considerations and detailed output buffer resistances, use the corresponding IBIS models located on the SoC Products Group website at http://www.microsemi.com/soc/download/ibis/default.aspx. 2. These values are provided for a load of 100 pF and 400 pF. For board design considerations and detailed output buffer resistances, use the corresponding IBIS models located on the SoC Products Group website at http://www.microsemi.com/soc/download/ibis/default.aspx. 3. For allowable Pclk configurations, refer to the Inter-Integrated Circuit (I2C) Peripherals section in the SmartFusion Microcontroller Subsystem User’s Guide. R ev i si o n 1 0 2- 91 SmartFusion DC and Switching Characteristics Table 2-102 • I2C Characteristics Commercial Case Conditions: TJ = 85ºC, VDD = 1.425 V, –1 Speed Grade (continued) Parameter Definition 3 tSU;STO STOP setup time tFILT Maximum spike width filtered Condition Value Unit – 1 pclk cycles – 50 ns Notes: 1. These maximum values are provided for information only. Minimum output buffer resistance values depend on VCCxxxxIOBx, drive strength selection, temperature, and process. For board design considerations and detailed output buffer resistances, use the corresponding IBIS models located on the SoC Products Group website at http://www.microsemi.com/soc/download/ibis/default.aspx. 2. These values are provided for a load of 100 pF and 400 pF. For board design considerations and detailed output buffer resistances, use the corresponding IBIS models located on the SoC Products Group website at http://www.microsemi.com/soc/download/ibis/default.aspx. 3. For allowable Pclk configurations, refer to the Inter-Integrated Circuit (I2C) Peripherals section in the SmartFusion Microcontroller Subsystem User’s Guide. SDA TRISE SCL tLOW tSU;STA S tHD;STA TFALL tHIGH tHD;DAT tSU;STO tSU;DAT P Figure 2-49 • I2C Timing Parameter Definition 2- 92 R ev i sio n 1 0 3 – SmartFusion Development Tools Designing with SmartFusion cSoCs involves three different types of design: FPGA design, embedded design and analog design. These roles can be filled by three different designers, two designers or even a single designer, depending on company structure and project complexity. Types of Design Tools Microsemi has developed design tools and flows to meet the needs of these three types of designers so they can work together smoothly on a single project (Figure 3-1). Embedded Design FPGA Design Software IDE (SoftConsole, Keil, IAR) MSS Configurator MSS Configuration – Analog Configuration Design Entry and IP Libraries Simulation and Synthesis Compile and Layout Timing and Power Analysis Hardware Debug Drivers and Sample Projects Application Development Build Project Simulation Software Debug Hardware Interfaces FlashPro4, ULINK, J-LINK Figure 3-1 • Three Design Roles FPGA Design Libero System-on-Chip (SoC) software is Microsemi’s comprehensive software toolset for designing with all Microsemi FPGAs and cSoCs. Libero SoC includes industry-leading synthesis, simulation and debug tools from Synopsys® and Mentor Graphics®, as well as innovative timing and power optimization and analysis. R ev i si o n 1 0 3 -1 SmartFusion Development Tools Embedded Design Microsemi offers FREE SoftConsole Eclipse based IDE, which includes the GNU C/C++ compiler and GDB debugger. Microsemi also offers evaluation versions of software from Keil and IAR, with full versions available from respective suppliers. Analog Design The MSS configurator provides graphical configuration for current, voltage and temperature monitors, sample sequencing setup and post-processing configuration, as well as DAC output. The MSS configurator creates a bridge between the FPGA fabric and embedded designers so device configuration can be easily shared between multiple developers. The MSS configurator includes the following: • A simple configurator for the embedded designer to control the MSS peripherals and I/Os • A method to import and view a hardware configuration from the FPGA flow into the embedded flow containing the memory map • Automatic generation of drivers for any peripherals or soft IP used in the system configuration • Comprehensive analog configuration for the programmable analog components • Creation of a standard MSS block to be used in SmartDesign for connection of FPGA fabric designs and IP Figure 3-2 • 3- 2 MSS Configurator R ev isio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) SmartFusion Ecosystem The Microsemi SoC Products Group has a long history of supplying comprehensive FPGA development tools and recognizes the benefit of partnering with industry leaders to deliver the optimum usability and productivity to customers. Taking the same approach with processor development, Microsemi has partnered with key industry leaders in the microcontroller space to provide the robust SmartFusion ecosystem. Microsemi is partnering with Keil and IAR to provide Software IDE support to SmartFusion system designers. The result is a robust solution that can be easily adopted by developers who are already doing embedded design. The learning path is straightforward for FPGA designers. Support for the SoC Products Group device and ecosystem resources is represented in Figure 3-3. Application Code Customer Secret Sauce Middleware TCP/IP, HTTP, SMTP, DHCP, LCD Hardware Abstraction Layer Figure 3-3 • eNVM Timer Ethernet SPI 12C Drivers UART µC/OS-III, RTX, Unison, FreeRTOS OS/RTOS Microsemi CMSIS-based HAL SmartFusion Ecosystem Figure 3-3 shows the SmartFusion stack with examples of drivers, RTOS, and middleware from Microsemi and partners. By leveraging the SmartFusion stack, designers can decide at which level to add their own customization to their design, thus speeding time to market and reducing overhead in the design. ARM Because an ARM processor was chosen for SmartFusion cSoCs, Microsemi's customers can benefit from the extensive ARM ecosystem. By building on Microsemi supplied hardware abstraction layer (HAL) and drivers, third party vendors can easily port RTOS and middleware for the SmartFusion cSoC. • ARM Cortex-M Series Processors • ARM Cortex-M3 Processor Resource • ARM Cortex-M3 Technical Reference Manual • ARM Cortex-M3 Processor Software Development for ARM7TDMI Processor Programmers White Paper R ev i si o n 1 0 3 -3 SmartFusion Development Tools Compile and Debug Microsemi's SoftConsole is a free Eclipse-based IDE that enables the rapid production of C and C++ executables for Microsemi FPGA and cSoCs using Cortex-M3, Cortex-M1 and Core8051s. For SmartFusion support, SoftConsole includes the GNU C/C++ compiler and GDB debugger. Additional examples can be found on the SoftConsole page: • Using UART with SmartFusion: SoftConsole Standalone Flow Tutorial – • Design Files Displaying POT Level with LEDs: Libero SoC and SoftConsole Flow Tutorial for SmartFusion – Design Files IAR Embedded Workbench® for ARM/Cortex is an integrated development environment for building and debugging embedded ARM applications using assembler, C and C++. It includes a project manager, editor, build and debugger tools with support for RTOS-aware debugging on hardware or in a simulator. • Designing SmartFusion cSoC with IAR Systems • IAR Embedded Workbench IDE User Guide for ARM • Download Evaluation or Kickstart version of IAR Embedded Workbench for ARM Keil's Microcontroller Development Kit comes in two editions: MDK-ARM and MDK Basic. Both editions feature µVision®, the ARM Compiler, MicroLib, and RTX, but the MDK Basic edition is limited to 256K so that small applications are more affordable. • Designing SmartFusion cSoC with Keil • Using Keil µVision and Microsemi SmartFusion cSoC – Programming file for use with this tutorial • Keil Microcontroller Development Kit for ARM Product Manuals • Download Evaluation version of Keil MDK-ARM Software IDE SoftConsole Vision IDE Embedded Workbench www.microsemi.com/soc www.keil.com www.iar.com Free with Libero SoC 32 K code limited 32 K code limited N/A Full version Full version Compiler GNU GCC RealView C/C++ IAR ARM Compiler Debugger GDB debug Vision Debugger C-SPY Debugger No Vision Simulator Yes FlashPro4 ULINK2 or ULINK-ME J-LINK or J-LINK Lite Website Free versions from SoC Products Group Available from Vendor Instruction Set Simulator Debug Hardware Operating Systems FreeRTOS™ is a portable, open source, royalty free, mini real-time kernel (a free-to-download and freeto-deploy RTOS that can be used in commercial applications without any requirement to expose your proprietary source code). FreeRTOS is scalable and designed specifically for small embedded systems. This FreeRTOS version ported by Microsemi is 6.0.1. For more information, visit the FreeRTOS website: www.freertos.org 3- 4 • SmartFusion Webserver Demo Using uIP and FreeRTOS • SmartFusion cSoC: Running Webserver, TFTP on IwIP TCP/IP Stack Application Note R ev isio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) Emcraft Systems provides porting of the open-source U-boot firmware and uClinux™ kernel to the SmartFusion cSoC, a Linux®-based cross-development framework, and other complementary components. Combined with the release of its A2F-Linux Evaluation Kit, this provides a low-cost platform for evaluation and development of Linux (uClinux) on the Cortex-M3 CPU core of the Microsemi SmartFusion cSoC. • Emcraft Linux on Microsemi's SmartFusion cSoC Keil offers the RTX Real-Time Kernel as a royalty-free, deterministic RTOS designed for ARM and Cortex-M devices. It allows you to create programs that simultaneously perform multiple functions and helps to create applications which are better structured and more easily maintained. • The RTX Real-Time Kernel is included with MDK-ARM. Download the Evaluation version of Keil MDK-ARM. • RTX source code is available as part of Keil/ARM Real-Time Library (RL-ARM), a group of tightlycoupled libraries designed to solve the real-time and communication challenges of embedded systems based on ARM-powered microcontroller devices. The RL-ARM library now supports SmartFusion cSoCs and designers with additional key features listed in the "Middleware" section on page 3-5. Micrium supports SmartFusion cSoCs with the company's flagship µC/OS family, recognized for a variety of features and benefits, including unparalleled reliability, performance, dependability, impeccable source code and vast documentation. Micrium supports the following products for SmartFusion cSoCs and continues to work with Microsemi on additional projects. • SmartFusion Quickstart Guide for Micrium µC/OS-III Examples – Design Files µC/OS-III™, Micrium's newest RTOS, is designed to save time on your next embedded project and puts greater control of the software in your hands. RoweBots provides an ultra tiny Linux-compatible RTOS called Unison for SmartFusion. Unison consists of a set of modular software components, which, like Linux, are either free or commercially licensed. Unison offers POSIX® and Linux compatibility with hard real-time performance, complete I/O modules and an easily understood environment for device driver programming. Seamless integration with FPGA and analog features are fast and easy. • Unison V4-based products include a free Unison V4 Linux and POSIX-compatible kernel with serial I/O, file system, six demonstration programs, upgraded documentation and source code for Unison V4, and free (for non-commercial use) Unison V4 TCP/IP server. Commercial license upgrade is available for Unison V4 TCP/IP server with three demonstration programs, DHCP client and source code. • Unison V5-based products include commercial Unison V5 Linux- and POSIX-compatible kernel with serial I/O, file system, extensive feature set, full documentation, source code and more than 20 demonstration programs, Unison V5 TCP/IPv4 with extended feature set, sockets interface, multiple network interfaces, PPP support, DHCP client, documentation, source code and six demonstration programs, and multiple other features. Middleware Microsemi has ported both uIP and IwIP for Ethernet support as well as including TFTP file service. • SmartFusion Webserver Demo Using uIP and FreeRTOS • SmartFusion: Running Webserver, TFTP on IwIP TCP/IP Stack Application Note The Keil/ARM Real-Time Library (RL-ARM)1, in addition to RTX source, includes the following: • RL-TCPnet (TCP/IP) – The Keil RL-TCPnet library, supporting full TCP/IP and UDP protocols, is a full networking suite specifically written for small ARM and Cortex-M processor-based microcontrollers. TCPnet is now ported to and supports SmartFusion Cortex-M3. It is highly optimized, has a small code footprint, and gives excellent performance, providing a wide range of application level protocols and examples such as FTP, SNMP, SOAP and AJAX. An HTTP server example of TCPnet working in a SmartFusion design is available. 1. The CAN and USB functions within RL-ARM are not supported for SmartFusion cSoC. R ev i si o n 1 0 3 -5 SmartFusion Development Tools • Flash File System (RL-Flash) allows your embedded applications to create, save, read, and modify files in standard storage devices such as ROM, RAM, or FlashROM, using a standard serial peripheral interface (SPI). Many ARM-based microcontrollers have a practical requirement for a standard file system. With RL-FlashFS you can implement new features in embedded applications such as data logging, storing program state during standby modes, or storing firmware upgrades. Micrium, in addition to µC/OS-III®, offers the following support for SmartFusion cSoC: • µC/TCP-IP™ is a compact, reliable, and high-performance stack built from the ground up by Micrium and has the quality, scalability, and reliability that translates into a rapid configuration of network options, remarkable ease-of-use, and rapid time-to-market. • µC/Probe™ is one of the most useful tools in embedded systems design and puts you in the driver's seat, allowing you to take charge of virtually any variable, memory location, and I/O port in your embedded product, while your system is running. References PCB Files A2F500 SmartFusion Development Kit PCB Files www.microsemi.com/soc/download/rsc/?f=A2F500_DEV_KIT_BF A2F200 SmartFusion Development Kit PCB Files www.microsemi.com/soc/download/rsc/?f=A2F_DEV_KIT_BF Application Notes SmartFusion cSoC Board Design Guidelines www.microsemi.com/soc/documents/A2F_AC359_AN.pdf 3- 6 R ev isio n 1 0 4 – SmartFusion Programming SmartFusion cSoCs have three separate flash areas that can be programmed: 1. The FPGA fabric 2. The embedded nonvolatile memories (eNVMs) 3. The embedded flash ROM (eFROM) There are essentially three methodologies for programming these areas: 1. In-system programming (ISP) 2. In-application programming (IAP) a. A2F060 and A2F500: The FPGA fabric, eNVM, and eFROM b. A2F200: Only the FPGA fabric and the eNVM 3. Pre-programming (non-ISP) Programming, whether ISP or IAP methodologies are employed, can be done in two ways: 1. Securely using the on chip AES decryption logic 2. In plain text In-System Programming In-System Programming is performed with the aid of external JTAG programming hardware. Table 4-1 describes the JTAG programming hardware that will program a SmartFusion cSoC and Table 4-2 defines the JTAG pins that provide the interface for the programming hardware. Table 4-1 • Supported JTAG Programming Hardware Dongle Source JTAG SWD1 SWV2 Program FPGA Program eFROM Program eNVM FlashPro3/4 SoC Products Group Yes No No Yes Yes Yes ULINK Pro Keil Yes Yes Yes Yes3 Yes3 Yes ULINK2 Keil Yes Yes Yes Yes3 Yes3 Yes Yes 3 Yes3 Yes IAR J-Link IAR Yes Yes Yes Notes: 1. SWD = ARM Serial Wire Debug 2. SWV = ARM Serial Wire Viewer 3. Planned support Table 4-2 • JTAG Pin Descriptions Pin Name Description JTAGSEL ARM Cortex-M3 or FPGA test access port (TAP) controller selection TRSTB Test reset bar TCK Test clock TMS Test mode select TDI Test data input TDO Test data output R ev i si o n 1 0 4 -7 SmartFusion Programming The JTAGSEL pin selects the FPGA TAP controller or the Cortex-M3 debug logic. When JTAGSEL is asserted, the FPGA TAP controller is selected and the TRSTB input into the Cortex-M3 is held in a reset state (logic 0), as depicted in Figure 4-1. Users should tie the JTAGSEL pin high externally. Microsemi’s free Eclipse-based IDE, SoftConsole, has the ability to control the JTAGSEL pin directly with the FlashPro4 programmer. Manual jumpers are provided on the evaluation and development kits to allow manual selection of this function for the J-Link and ULINK debuggers. Note: Standard ARM JTAG connectors do not have access to the JTAGSEL pin. SoftConsole automatically selects the appropriate TAP controller using the CTXSELECT JTAG command. When using SoftConsole, the state of JTAGSEL is a "don't care." VJTAG (1.5 V to 3.3. V nominal) TAP Controller JTAG_SEL TRSTB FPGA TAP Controller Figure 4-1 • Cortex-M3 TRSTB FPGA Programming Control TRSTB Logic In-Application Programming In-application programming refers to the ability to reprogram the various flash areas under direct supervision of the Cortex-M3. Reprogramming the FPGA Fabric Using the Cortex-M3 In this mode, the Cortex-M3 is executing the programming algorithm on-chip. The IAP driver can be incorporated into the design project and executed from eNVM or eSRAM. The SoC Products Group provides working example projects for SoftConsole, IAR, and Keil development environments. These can be downloaded via the SoC Products Group Firmware Catalog. The new bitstream to be programmed into the FPGA can reside on the user’s printed circuit board (PCB) in a separate SPI flash memory. Alternately, the user can modify the existing projects supplied by the SoC Products Group and, via custom handshaking software, throttle the download of the new image and program the FPGA a piece at a time in real time. A cost-effective and reliable approach would be to store the bitstream in an external SPI flash. Another option is storing a redundant bitstream image in an external SPI flash and loading the newest version into the FPGA only when receiving an IAP command. Since the FPGA I/Os are tristated or held at predefined or last known state during FPGA programming, the user must use MSS I/Os to interface to external memories. Since there are two SPI controllers in the MSS, the user can dedicate one to an SPI flash and the other to the particulars of an application. The amount of flash memory required to program the FPGA always exceeds the size of the eNVM block that is on-chip. The external memory controller (EMC) cannot be used as an interface to a memory device for storage of a bitstream because its I/O pads are FPGA I/Os; hence they are tristated when the FPGA is in a programming state. The MSS resets itself after IAP of the FPGA fabric. This reset is internally asserted on MSS_RESETN by the power supply monitor (PSM) and reset controller of the MSS. 4- 8 R ev isio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) Re-Programming the eNVM Blocks Using the Cortex-M3 In this mode the Cortex-M3 is executing the eNVM programming algorithm from eSRAM. Since individual pages (132 bytes) of the eNVM can be write-protected, the programming algorithm software can be protected from inadvertent erasure. When reprogramming the eNVM, both MSS I/Os and FPGA I/Os are available as interfaces for sourcing the new eNVM image. The SoC Products Group provides working example projects for SoftConsole, IAR, and Keil development environments. These can be downloaded via the SoC Products Group Firmware Catalog. Alternately, the eNVM can be reprogrammed by the Cortex-M3 via the IAP driver. This is necessary when using an encrypted image. Secure Programming For background, refer to the "Security in Low Power Flash Devices" chapter of the Fusion FPGA Fabric User’s Guide on the SoC Products Group website. SmartFusion ISP behaves identically to Fusion ISP. IAP of SmartFusion cSoCs is accomplished by using the IAP driver. Only the FPGA fabric and the eNVM can be reprogrammed with the protection of security measures by using the IAP driver. Typical Programming and Erase Times Table 4-3 documents the typical programming and erase times for two components of SmartFusion cSoCs, FPGA fabric and eNVM, using the SoC Products Group’s FlashPro hardware and software. These times will be different for other ISP and IAP methods. The Program action in FlashPro software includes erase, program, and verify to complete. The typical programming (including erase) time per page of the eNVM is 8 ms. Table 4-3 • Typical Programming and Erase Times FPGA Fabric (seconds) eNVM (seconds) A2F200 A2F500 A2F200 A2F500 Erase 21 21 N/A N/A Program 8 15 18 26 Verify 9 16 26 42 References User’s Guides DirectC User’s Guide www.microsemi.com/soc/documents/DirectC_UG.pdf In-System Programming (ISP) of Microsemi’s Low-Power Flash Devices Using FlashPro4/3/3X www.microsemi.com/soc/documents/LPF_AC386_AN.pdf Programming Flash Devices HandBook www.microsemi.com/soc/documents/Flash_Program_HBs.pdf Application Notes on IAP Programming Technique SmartFusion cSoC: Programming FPGA Fabric and eNVM Using In-Application Programming Interface App Note www.microsemi.com/soc/documents/A2F_AC362_AN.pdf SmartFusion cSoC: Basic Bootloader and Field Upgrade eNVM Through IAP Interface App Note www.microsemi.com/soc/documents/A2F_AC372_AN.pdf R ev i si o n 1 0 4 -9 5 – Pin Descriptions Supply Pins Name Type GND Ground Digital ground to the FPGA fabric, microcontroller subsystem and GPIOs Description GND15ADC0 Ground Quiet analog ground to the 1.5 V circuitry of the first analog-to-digital converter (ADC) GND15ADC1 Ground Quiet analog ground to the 1.5 V circuitry of the second ADC GND15ADC2 Ground Quite analog ground to the 1.5 V circuitry of the third ADC GND33ADC0 Ground Quiet analog ground to the 3.3 V circuitry of the first ADC GND33ADC1 Ground Quiet analog ground to the 3.3 V circuitry of the second ADC GND33ADC2 Ground Quiet analog ground to the 3.3 V circuitry of the third ADC GNDA Ground Quiet analog ground to the analog front-end GNDAQ Ground Quiet analog ground to the analog I/O of SmartFusion cSoCs GNDENVM Ground Digital ground to the embedded nonvolatile memory (eNVM) GNDLPXTAL Ground Analog ground to the low power 32 KHz crystal oscillator circuitry GNDMAINXTAL Ground Analog ground to the main crystal oscillator circuitry GNDQ Ground Quiet digital ground supply voltage to input buffers of I/O banks. Within the package, the GNDQ plane is decoupled from the simultaneous switching noise originated from the output buffer ground domain. This minimizes the noise transfer within the package and improves input signal integrity. GNDQ needs to always be connected on the board to GND. GNDRCOSC Ground Analog ground to the integrated RC oscillator circuit GNDSDD0 Ground Analog ground to the first sigma-delta DAC GNDSDD1 Ground Common analog ground to the second and third sigma-delta DACs GNDTM0 Ground Analog temperature monitor common ground for signal conditioning blocks SCB 0 and SCB 1 (see information for pins "TM0" and "TM1" in the "Analog Front-End (AFE)" section on page 5-14). GNDTM1 Ground Analog temperature monitor common ground for signal conditioning block SCB 2 and SBCB 3 (see information for pins "TM2" and "TM3" in the "Analog Front-End (AFE)" section on page 5-14). GNDTM2 Ground Analog temperature monitor common ground for signal conditioning block SCB4 GNDVAREF Ground Analog ground reference used by the ADC. This pad should be connected to a quiet analog ground. VCC Supply Digital supply to the FPGA fabric and MSS, nominally 1.5 V. VCC is also required for powering the JTAG state machine, in addition to VJTAG. Even when a SmartFusion cSoC is in bypass mode in a JTAG chain of interconnected devices, both VCC and VJTAG must remain powered to allow JTAG signals to pass through the SmartFusion cSoC. Notes: 1. The following 3.3 V supplies should be connected together while following proper noise filtering practices: VCC33A, VCC33ADCx, VCC33AP, VCC33SDDx, VCCMAINXTAL, and VCCLPXTAL. 2. The following 1.5 V supplies should be connected together while following proper noise filtering practices: VCC, VCC15A, and VCC15ADCx. 3. For more details on VCCPLLx capacitor recommendations, refer to the application note AC359, SmartFusion cSoC Board Design Guidelines, the "PLL Power Supply Decoupling Scheme" section. R ev i si o n 1 0 5 -1 Pin Descriptions Name Type Description VCC15A Supply Clean analog 1.5 V supply to the analog circuitry. Always power this pin. VCC15ADC0 Supply Analog 1.5 V supply to the first ADC. Always power this pin. VCC15ADC1 Supply Analog 1.5 V supply to the second ADC. Always power this pin. VCC15ADC2 Supply Analog 1.5 V supply to the third ADC. Always power this pin. VCC33A Supply Clean 3.3 V analog supply to the analog circuitry. VCC33A is also used to feed the 1.5 V voltage regulator for designs that do not provide an external supply to VCC. Refer to the Voltage Regulator (VR), Power Supply Monitor (PSM), and Power Modes section in the SmartFusion Microcontroller Subsystem User’s Guide for more information. VCC33ADC0 Supply Analog 3.3 V supply to the first ADC. If unused, Microsemi recommends connecting this pin to a 3.3 V supply.1 VCC33ADC1 Supply Analog 3.3 V supply to the second ADC. If unused, Microsemi recommends connecting this pin to a 3.3 V supply.1 VCC33ADC2 Supply Analog 3.3 V supply to the third ADC. If unused, Microsemi recommends connecting this pin to a 3.3 V supply.1 VCC33AP Supply Analog clean 3.3 V supply to the charge pump. To avoid high current draw, VCC33AP should be powered up simultaneously with or after VCC33A. Can be pulled down if unused.1 VCC33N Supply –3.3 V output from the voltage converter. A 2.2 µF capacitor must be connected from this pin to GND. Analog charge pump capacitors are not needed if none of the analog SCB features are used and none of the SDDs are used. In that case it should be left unconnected. VCC33SDD0 Supply Analog 3.3 V supply to the first sigma-delta DAC VCC33SDD1 Supply Common analog 3.3 V supply to the second and third sigma-delta DACs VCCENVM Supply Digital 1.5 V power supply to the embedded nonvolatile memory blocks. To avoid high current draw, VCC should be powered up before or simultaneously with VCCENVM. VCCESRAM Supply Digital 1.5 V power supply to the embedded SRAM blocks. Available only on the 208PQFP package. It should be connected to VCC (in other packages, it is internally connected to VCC). VCCFPGAIOB0 Supply Digital supply to the FPGA fabric I/O bank 0 (north FPGA I/O bank) for the output buffers and I/O logic. Each bank can have a separate VCCFPGAIO connection. All I/Os in a bank will run off the same VCCFPGAIO supply. VCCFPGAIO can be 1.5 V, 1.8 V, 2.5 V, or 3.3 V, nominal voltage. Unused I/O banks should have their corresponding VCCFPGAIO pins tied to GND. VCCFPGAIOB1 Supply Digital supply to the FPGA fabric I/O bank 1 (east FPGA I/O bank) for the output buffers and I/O logic. Each bank can have a separate VCCFPGAIO connection. All I/Os in a bank will run off the same VCCFPGAIO supply. VCCFPGAIO can be 1.5 V, 1.8 V, 2.5 V, or 3.3 V, nominal voltage. Unused I/O banks should have their corresponding VCCFPGAIO pins tied to GND. Notes: 1. The following 3.3 V supplies should be connected together while following proper noise filtering practices: VCC33A, VCC33ADCx, VCC33AP, VCC33SDDx, VCCMAINXTAL, and VCCLPXTAL. 2. The following 1.5 V supplies should be connected together while following proper noise filtering practices: VCC, VCC15A, and VCC15ADCx. 3. For more details on VCCPLLx capacitor recommendations, refer to the application note AC359, SmartFusion cSoC Board Design Guidelines, the "PLL Power Supply Decoupling Scheme" section. 5- 2 R ev isio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) Name VCCFPGAIOB5 Type Description Supply Digital supply to the FPGA fabric I/O bank 5 (west FPGA I/O bank) for the output buffers and I/O logic. Each bank can have a separate VCCFPGAIO connection. All I/Os in a bank will run off the same VCCFPGAIO supply. VCCFPGAIO can be 1.5 V, 1.8 V, 2.5 V, or 3.3 V, nominal voltage. Unused I/O banks should have their corresponding VCCFPGAIO pins tied to GND. VCCLPXTAL Supply Analog supply to the low power 32 KHz crystal oscillator. Always power this pin.1 VCCMAINXTAL Supply Analog supply to the main crystal oscillator circuit. Always power this pin.1 VCCMSSIOB2 Supply Supply voltage to the microcontroller subsystem I/O bank 2 (east MSS I/O bank) for the output buffers and I/O logic. Each bank can have a separate VCCMSSIO connection. All I/Os in a bank will run off the same VCCMSSIO supply. VCCMSSIO can be 1.5 V, 1.8 V, 2.5 V, or 3.3 V, nominal voltage. Unused I/O banks should have their corresponding VCCMSSIO pins tied to GND. VCCMSSIOB4 Supply Supply voltage to the microcontroller subsystem I/O bank 4 (west MSS I/O bank) for the output buffers and I/O logic. Each bank can have a separate VCCMSSIO connection. All I/Os in a bank will run off the same VCCMSSIO supply. VCCMSSIO can be 1.5 V, 1.8 V, 2.5 V, or 3.3 V, nominal voltage. Unused I/O banks should have their corresponding VCCMSSIO pins tied to GND. VCCPLLx Supply Analog 1.5 V supply to the PLL. Always power this pin. VCCRCOSC Supply Analog supply to the integrated RC oscillator circuit. Always power this pin.1 VCOMPLAx Supply Analog ground for the PLL VDDBAT Supply External battery connection to the low power 32 KHz crystal oscillator (along with VCCLPXTAL), RTC, and battery switchover circuit. Can be pulled down if unused. Notes: 1. The following 3.3 V supplies should be connected together while following proper noise filtering practices: VCC33A, VCC33ADCx, VCC33AP, VCC33SDDx, VCCMAINXTAL, and VCCLPXTAL. 2. The following 1.5 V supplies should be connected together while following proper noise filtering practices: VCC, VCC15A, and VCC15ADCx. 3. For more details on VCCPLLx capacitor recommendations, refer to the application note AC359, SmartFusion cSoC Board Design Guidelines, the "PLL Power Supply Decoupling Scheme" section. R ev i si o n 1 0 5 -3 Pin Descriptions Name Type VJTAG Supply Description Digital supply to the JTAG controller SmartFusion cSoCs have a separate bank for the dedicated JTAG pins. The JTAG pins can be run at any voltage from 1.5 V to 3.3 V (nominal). Isolating the JTAG power supply in a separate I/O bank gives greater flexibility in supply selection and simplifies power supply and PCB design. If the JTAG interface is neither used nor planned to be used, the VJTAG pin together with the TRSTB pin could be tied to GND. Note that VCC is required to be powered for JTAG operation; VJTAG alone is insufficient. If a SmartFusion cSoC is in a JTAG chain of interconnected boards and it is desired to power down the board containing the device, this can be done provided both VJTAG and VCC to the device remain powered; otherwise, JTAG signals will not be able to transition the device, even in bypass mode. See "JTAG Pins" section on page 5-10. VPP Supply Digital programming circuitry supply SmartFusion cSoCs support single-voltage in-system programming (ISP) of the configuration flash, embedded FlashROM (eFROM), and embedded nonvolatile memory (eNVM). For programming, VPP should be in the 3.3 V ± 5% range. During normal device operation, VPP can be left floating or can be tied to any voltage between 0 V and 3.6 V. When the VPP pin is tied to ground, it shuts off the charge pump circuitry, resulting in no sources of oscillation from the charge pump circuitry. For proper programming, 0.01μF, and 0.1μF to 1μF capacitors, (both rated at 16 V) are to be connected in parallel across VPP and GND, and positioned as close to the FPGA pins as possible. Notes: 1. The following 3.3 V supplies should be connected together while following proper noise filtering practices: VCC33A, VCC33ADCx, VCC33AP, VCC33SDDx, VCCMAINXTAL, and VCCLPXTAL. 2. The following 1.5 V supplies should be connected together while following proper noise filtering practices: VCC, VCC15A, and VCC15ADCx. 3. For more details on VCCPLLx capacitor recommendations, refer to the application note AC359, SmartFusion cSoC Board Design Guidelines, the "PLL Power Supply Decoupling Scheme" section. 5- 4 R ev isio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) User-Defined Supply Pins Name Type Polarity/ Bus Size VAREF0 Input 1 Description Analog reference voltage for first ADC The SmartFusion cSoC can be configured to generate a 2.56 V internal reference that can be used by the ADC. While using the internal reference, the reference voltage is output on the VAREFOUT pin for use as a system reference. If a different reference voltage is required, it can be supplied by an external source and applied to this pin. The valid range of values that can be supplied to the ADC is 1.0 V to 3.3 V. When VAREF0 is internally generated, a bypass capacitor must be connected from this pin to ground. The value of the bypass capacitor should be between 3.3 µF and 22 µF, which is based on the needs of the individual designs. The choice of the capacitor value has an impact on the settling time it takes the VAREF0 signal to reach the required specification of 2.56 V to initiate valid conversions by the ADC. If the lower capacitor value is chosen, the settling time required for VAREF0 to achieve 2.56 V will be shorter than when selecting the larger capacitor value. The above range of capacitor values supports the accuracy specification of the ADC, which is detailed in the datasheet. Designers choosing the smaller capacitor value will not obtain as much margin in the accuracy as that achieved with a larger capacitor value. See the Analog-to-Digital Converter (ADC) section in the SmartFusion Programmable Analog User’s Guide for more information. The SoC Products Group recommends customers use 10 µF as the value of the bypass capacitor. Designers choosing to use an external VAREF0 need to ensure that a stable and clean VAREF0 source is supplied to the VAREF0 pin before initiating conversions by the ADC. To use the internal voltage reference, you must connect the VAREFOUT pin to the appropriate ADC VAREFx input— either the VAREF0 or VAREF1 pin—on the PCB. VAREF1 Input 1 Analog reference voltage for second ADC See "VAREF0" above for more information. VAREF2 Input 1 Analog reference voltage for third ADC See "VAREF0" above for more. VAREFOUT Out 1 Internal 2.56 V voltage reference output. Can be used to provide the two ADCs with a unique voltage reference externally by connecting VAREFOUT to both VAREF0 and VAREF1. To use the internal voltage reference, you must connect the VAREFOUT pin to the appropriate ADC VAREFx input—either the VAREF0 or VAREF1 pin—on the PCB. R ev i si o n 1 0 5 -5 Pin Descriptions Global I/O Naming Conventions Gmn (Gxxx) refers to Global I/Os. These Global I/Os are used to connect the input to global networks. Global networks have high fanout and low skew. The naming convention for Global I/Os is as follows: G = Global m = Global pin location associated with each CCC on the device: – A (northwest corner) – B (northeast corner) – C (east middle) – D (southeast corner) – E (southwest corner) – F (west middle) n = Global input MUX and pin number of the associated Global location m—A0, A1, A2, B0, B1, B2, C0, C1, or C2. Global (GL) I/Os have access to certain clock conditioning circuitry (and the PLL) and/or have direct access to the global network (spines). Additionally, the global I/Os can be used as regular I/Os, since they have identical capabilities. Unused GL pins are configured as inputs with pull-up resistors. See more detailed descriptions of global I/O connectivity in the clocking resources chapter of the SmartFusion FPGA Fabric User’s Guide and the clock conditioning circuitry chapter of the SmartFusion Microcontroller Subsystem User’s Guide. All inputs labeled GC/GF are direct inputs into the quadrant clocks. The inputs to the global network are multiplexed, and only one input can be used as a global input. For example, if GAA0 is used as a quadrant global input, GAA1 and GAA2 are no longer available for input to the quadrant globals. All inputs labeled GC/GF are direct inputs into the chip-level globals, and the rest are connected to the quadrant globals. User Pins Name Type Polarity/B us Size GPIO_x In/out 32 Description Microcontroller Subsystem (MSS) General Purpose I/O (GPIO). The MSS GPIO pin functions as an input, output, tristate, or bidirectional buffer with configurable interrupt generation and Schmitt trigger support. Input and output signal levels are compatible with the I/O standard selected. Unused GPIO pins are tristated and do not include pull-up or pull-down resistors. During power-up, the used GPIO pins are tristated with no pull-up or pull-down resistors until Sys boot configures them. Some of these pins are also multiplexed with integrated peripherals in the MSS (SPI, I2C, and UART). These pins are located in Bank-2 (GPIO_16 to GPIO_31) for A2F060, A2F200, and A2F500 devices. GPIOs can be routed to dedicated I/O buffers (MSSIOBUF) or in some cases to the FPGA fabric interface through an IOMUX. This allows GPIO pins to be multiplexed as either I/Os for the FPGA fabric, the ARM® Cortex-M3 or for given integrated MSS peripherals. The MSS peripherals are not multiplexed with each other; they are multiplexed only with the GPIO block. For more information, see the General Purpose I/O Block (GPIO) section in the SmartFusion Microcontroller Subsystem User’s Guide. IO 5- 6 In/out FPGA user I/O R ev isio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) User I/O Naming Conventions The naming convention used for each FPGA user I/O is Gmn/IOuxwByVz, where: Gmn is only used for I/Os that also have CCC access—i.e., global pins. Refer to the "Global I/O Naming Conventions" section on page 5-6. u = I/O pair number in bank, starting at 00 from the northwest I/O bank and proceeding in a clockwise direction. x = P (positive) or N (negative) or S (single-ended) or R (regular, single-ended). w = D (Differential Pair), P (Pair), or S (Single-Ended). D (Differential Pair) if both members of the pair are bonded out to adjacent pins or are separated only by one GND or NC pin; P (Pair) if both members of the pair are bonded out but do not meet the adjacency requirement; or S (Single-Ended) if the I/O pair is not bonded out. For Differential Pairs (D), adjacency for ball grid packages means only vertical or horizontal. Diagonal adjacency does not meet the requirements for a true differential pair. B = Bank y = Bank number starting at 0 from northwest I/O bank and incrementing clockwise. V = Reference voltage z = VREF mini bank number. The FPGA user I/O pin functions as an input, output, tristate or bidirectional buffer. Input and output signal levels are compatible with the I/O standard selected. Unused I/O pins are disabled by Libero SoC software and include a weak pull-up resistor. During power-up, the used I/O pins are tristated with no pull-up or pull-down resistors until I/O enable (there is a delay after voltage stabilizes, and different I/O banks power up sequentially to avoid a surge of ICCI). Unused I/Os are configured as follows: • Output buffer is disabled (with tristate value of high impedance) • Input buffer is disabled (with tristate value of high impedance) • Weak pull-up is programmed Some of these pins are also multiplexed with integrated peripherals in the MSS (Ethernet MAC and external memory controller). Unused MSS I/Os are neither weakly pulled-up nor weakly pulled-down. The Schmitt trigger is disabled. Essentially, I/Os have the reset values as defined in Table 19-25 IOMUX_n_CR, in the SmartFusion Microcontroller Subsystem User's Guide. By default, during programming I/Os become tristated and weakly pulled up to VCCxxxxIOBx. You can modify the I/O states during programming in FlashPro. For more details, refer to "Specifying I/O States During Programming" on page 1-3. With the VCCI and VCC supplies continuously powered up, when the device transitions from programming to operating mode, the I/Os are instantly configured to the desired user configuration. For more information, see the SmartFusion FPGA User I/Os section in the SmartFusion FPGA Fabric User’s Guide. R ev i si o n 1 0 5 -7 Pin Descriptions Special Function Pins Name Type Polarity/Bus Size NC Description No connect This pin is not connected to circuitry within the device. These pins can be driven to any voltage or can be left floating with no effect on the operation of the device. DC Do not connect. This pin should not be connected to any signals on the PCB. These pins should be left unconnected. LPXIN In 1 Low power 32 KHz crystal oscillator. Input from the 32 KHz oscillator. Pin for connecting a low power 32 KHz watch crystal. If not used, the LPXIN pin can be left floating. For more information, see the PLLs, Clock Conditioning Circuitry, and OnChip Crystal Oscillators section in the SmartFusion Microcontroller Subsystem User’s Guide. LPXOUT In 1 Low power 32 KHz crystal oscillator. Output to the 32 KHz oscillator. Pin for connecting a low power 32 KHz watch crystal. If not used, the LPXOUT pin can be left floating. For more information, see the PLLs, Clock Conditioning Circuitry, and OnChip Crystal Oscillators section in the SmartFusion Microcontroller Subsystem User’s Guide. MAINXIN In 1 Main crystal oscillator circuit. Input to the crystal oscillator circuit. Pin for connecting an external crystal, ceramic resonator, or RC network. When using an external crystal or ceramic oscillator, external capacitors are also recommended. Refer to documentation from the crystal oscillator manufacturer for proper capacitor value. If an external RC network or clock input is used, the RC components are connected to the MAINXIN pin, with MAINXOUT left floating. When the main crystal oscillator is not being used, MAINXIN and MAINXOUT pins can be left floating. For more information, see the PLLs, Clock Conditioning Circuitry, and On-Chip Crystal Oscillators section in the SmartFusion Microcontroller Subsystem User’s Guide. MAINXOUT Out 1 Main crystal oscillator circuit. Output from the crystal oscillator circuit. Pin for connecting external crystal or ceramic resonator. When using an external crystal or ceramic oscillator, external capacitors are also recommended. Refer to documentation from the crystal oscillator manufacturer for proper capacitor value. If an external RC network or clock input is used, the RC components are connected to the MAINXIN pin, with MAINXOUT left floating. When the main crystal oscillator is not being used, MAINXIN and MAINXOUT pins can be left floating. For more information, see the PLLs, Clock Conditioning Circuitry, and On-Chip Crystal Oscillators section in the SmartFusion Microcontroller Subsystem User’s Guide. 5- 8 R ev isio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) Name Type Polarity/Bus Size NCAP 1 Description Negative capacitor connection. This is the negative terminal of the charge pump. A capacitor, with a 2.2 µF recommended value, is required to connect between PCAP and NCAP. Analog charge pump capacitors are not needed if none of the analog SCB features are used and none of the SDDs are used. In that case it should be left unconnected. PCAP 1 Positive Capacitor connection. This is the positive terminal of the charge pump. A capacitor, with a 2.2 µF recommended value, is required to connect between PCAP and NCAP. If this pin is not used, it must be left unconnected/floating. In this case, no capacitor is needed. Analog charge pump capacitors are not needed if none of the analog SCB features are used, and none of the SDDs are used. PTBASE 1 Pass transistor base connection This is the control signal of the voltage regulator. This pin should be connected to the base of an external pass transistor used with the 1.5 V internal voltage regulator and can be floating if not used. PTEM 1 Pass transistor emitter connection. This is the feedback input of the voltage regulator. This pin should be connected to the emitter of an external pass transistor used with the 1.5 V internal voltage regulator and can be floating if not used. MSS_RESET_N PU_N In Low Low Reset signal which can be used as an external reset and can also be used as a system level reset under control of the Cortex-M3 processor. MSS_RESET_N is an output asserted low after power-on reset. The direction of MSS_RESET_N changes during the execution of the Microsemi System Boot when chip-level reset is enabled. The Microsemi System Boot reconfigures MSS_RESET_N to become a reset input signal when chip-level reset is enabled. It has an internal pull-up so it can be left floating. In the current software, the MSS_RESET_N is modeled as an external input signal only. Low Push-button is the connection for the external momentary switch used to turn on the 1.5 V voltage regulator and can be floating if not used. R ev i si o n 1 0 5 -9 Pin Descriptions JTAG Pins SmartFusion cSoCs have a separate bank for the dedicated JTAG pins. The JTAG pins can be run at any voltage from 1.5 V to 3.3 V (nominal). VCC must also be powered for the JTAG state machine to operate, even if the device is in bypass mode; VJTAG alone is insufficient. Both VJTAG and VCC to the SmartFusion cSoC part must be supplied to allow JTAG signals to transition the SmartFusion cSoC. Isolating the JTAG power supply in a separate I/O bank gives greater flexibility with supply selection and simplifies power supply and PCB design. If the JTAG interface is neither used nor planned to be used, the VJTAG pin together with the TRSTB pin could be tied to GND. Name JTAGSEL Type Polarity/ Bus Size In 1 Description JTAG controller selection Depending on the state of the JTAGSEL pin, an external JTAG controller will either see the FPGA fabric TAP/auxiliary TAP (High) or the Cortex-M3 JTAG debug interface (Low). The JTAGSEL pin should be connected to an external pull-up resistor such that the default configuration selects the FPGA fabric TAP. TCK In 1 Test clock Serial input for JTAG boundary scan, ISP, and UJTAG. The TCK pin does not have an internal pull-up/-down resistor. If JTAG is not used, it is recommended to tie off TCK to GND or VJTAG through a resistor placed close to the FPGA pin. This prevents JTAG operation in case TMS enters an undesired state. Note that to operate at all VJTAG voltages, 500 to 1 k will satisfy the requirements. Refer to Table 5-1 on page 5-11 for more information. Can be left floating when unused. TDI In 1 Test data Serial input for JTAG boundary scan, ISP, and UJTAG usage. There is an internal weak pull-up resistor on the TDI pin. TDO Out 1 Test data Serial output for JTAG boundary scan, ISP, and UJTAG usage. TMS In HIGH Test mode select The TMS pin controls the use of the IEEE1532 boundary scan pins (TCK, TDI, TDO, TRST). There is an internal weak pull-up resistor on the TMS pin. Can be left floating when unused. TRSTB In HIGH Boundary scan reset pin The TRST pin functions as an active low input to asynchronously initialize (or reset) the boundary scan circuitry. There is an internal weak pull-up resistor on the TRST pin. If JTAG is not used, an external pull-down resistor could be included to ensure the TAP is held in reset mode. The resistor values must be chosen from Table 5-1 on page 5-11 and must satisfy the parallel resistance value requirement. The values in Table 5-1 on page 5-11 correspond to the resistor recommended when a single device is used. The values correspond to the equivalent parallel resistor when multiple devices are connected via a JTAG chain. In critical applications, an upset in the JTAG circuit could allow entering an undesired JTAG state. In such cases, it is recommended that you tie off TRST to GND through a resistor placed close to the FPGA pin. The TRSTB pin also resets the serial wire JTAG – debug port (SWJ-DP) circuitry within the Cortex-M3. Can be left floating when unused. 5- 10 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) Table 5-1 • Recommended Tie-Off Values for the TCK and TRST Pins Tie-Off Resistance1, 2 VJTAG VJTAG at 3.3 V 200 to 1 k VJTAG at 2.5 V 200 to 1 k VJTAG at 1.8 V 500 to 1 k VJTAG at 1.5 V 500 to 1 k Notes: 1. The TCK pin can be pulled up/down. 2. The TRST pin can only be pulled down. 1. Equivalent parallel resistance if more than one device is on JTAG chain. R ev i si o n 1 0 5- 11 Pin Descriptions Microcontroller Subsystem (MSS) Name Type Polarity/ Bus Size Description External Memory Controller EMC_ABx Out 26 External memory controller address bus Can also be used as an FPGA user I/O (see "IO" on page 5-6). EMC_BYTENx Out LOW/2 External memory controller byte enable Can also be used as an FPGA user I/O (see "IO" on page 5-6). EMC_CLK Out Rise External memory controller clock Can also be used as an FPGA user I/O (see "IO" on page 5-6). EMC_CSx_N Out LOW/2 External memory controller chip selects Can also be used as an FPGA User IO (see "IO" on page 5-6). EMC_DBx In/out 16 External memory controller data bus Can also be used as an FPGA user I/O (see "IO" on page 5-6). EMC_OENx_N Out LOW/2 External memory controller output enables Can also be used as an FPGA User IO (see "IO" on page 5-6). EMC_RW_N Out Level External memory controller read/write. Read = High, write = Low. Can also be used as an FPGA user I/O (see "IO" on page 5-6). Inter-Integrated Circuit I2C_0_SCL (I2C) In/out Peripherals 1 I2C bus serial clock output. First I2C. Can also be used as an MSS GPIO (see "GPIO_x" on page 5-6). I2C_0_SDA In/out 1 I2C bus serial data input/output. First I2C. Can also be used as an MSS GPIO (see "GPIO_x" on page 5-6). I2C_1_SCL In/out 1 I2C bus serial clock output. Second I2C. Can also be used as an MSS GPIO (see "GPIO_x" on page 5-6). I2C_1_SDA In/out 1 I2C bus serial data input/output. Second I2C. Can also be used as an MSS GPIO (see "GPIO_x" on page 5-6). Serial Peripheral Interface (SPI) Controllers SPI_0_CLK Out 1 Clock. First SPI. Can also be used as an MSS GPIO (see "GPIO_x" on page 5-6). SPI_0_DI In 1 Data input. First SPI. Can also be used as an MSS GPIO (see "GPIO_x" on page 5-6). SPI_0_DO Out 1 Data output. First SPI. Can also be used as an MSS GPIO (see "GPIO_x" on page 5-6). SPI_0_SS Out 1 Slave select (chip select). First SPI. Can also be used as an MSS GPIO (see "GPIO_x" on page 5-6). SPI_1_CLK Out 1 Clock. Second SPI. Can also be used as an MSS GPIO (see "GPIO_x" on page 5-6). SPI_1_DI In 1 Data input. Second SPI. Can also be used as an MSS GPIO (see "GPIO_x" on page 5-6). 5- 12 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) Name SPI_1_DO Type Polarity/ Bus Size Out 1 Description Data output. Second SPI. Can also be used as an MSS GPIO (see "GPIO_x" on page 5-6). SPI_1_SS Out 1 Slave select (chip select). Second SPI. Can also be used as an MSS GPIO (see "GPIO_x" on page 5-6). Universal Asynchronous Receiver/Transmitter (UART) Peripherals UART_0_RXD In 1 Receive data. First UART. Can also be used as an MSS GPIO (see "GPIO_x" on page 5-6). UART_0_TXD Out 1 Transmit data. First UART. Can also be used as an MSS GPIO (see "GPIO_x" on page 5-6). UART_1_RXD In 1 Receive data. Second UART. Can also be used as an MSS GPIO (see "GPIO_x" on page 5-6). UART_1_TXD Out 1 Transmit data. Second UART. Can also be used as an MSS GPIO (see "GPIO_x" on page 5-6). Ethernet MAC MAC_CLK In Rise Receive clock. 50 MHz ± 50 ppm clock source received from RMII PHY. Can be left floating when unused. MAC_CRSDV In High Carrier sense/receive data valid for RMII PHY Can also be used as an FPGA User IO (see "IO" on page 5-6). MAC_MDC Out Rise RMII management clock Can also be used as an FPGA User IO (see "IO" on page 5-6). MAC_MDIO In/Out 1 RMII management data input/output Can also be used as an FPGA User IO (see "IO" on page 5-6). MAC_RXDx In 2 Ethernet MAC receive data. Data recovered and decoded by PHY. The RXD[0] signal is the least significant bit. Can also be used as an FPGA User I/O (see "IO" on page 5-6). MAC_RXER In HIGH Ethernet MAC receive error. If MACRX_ER is asserted during reception, the frame is received and status of the frame is updated with MACRX_ER. Can also be used as an FPGA user I/O (see "IO" on page 5-6). MAC_TXDx Out 2 Ethernet MAC transmit data. The TXD[0] signal is the least significant bit. Can also be used as an FPGA user I/O (see "IO" on page 5-6). MAC_TXEN Out HIGH Ethernet MAC transmit enable. When asserted, indicates valid data for the PHY on the TXD port. Can also be used as an FPGA User I/O (see "IO" on page 5-6). R ev i si o n 1 0 5- 13 Pin Descriptions Analog Front-End (AFE) Associated With Name Type ABPS0 In Description SCB 0 / active bipolar prescaler input 1. ADC/SDD SCB ADC0 SCB0 See the Active Bipolar Prescaler (ABPS) section in the SmartFusion Programmable Analog User’s Guide. ABPS1 In SCB 0 / active bipolar prescaler Input 2 ADC0 SCB0 ABPS2 In SCB 1 / active bipolar prescaler Input 1 ADC0 SCB1 ABPS3 In SCB 1 / active bipolar prescaler Input 2 ADC0 SCB1 ABPS4 In SCB 2 / active bipolar prescaler Input 1 ADC1 SCB2 ABPS5 In SCB 2 / active bipolar prescaler Input 2 ADC1 SCB2 ABPS6 In SCB 3 / active bipolar prescaler Input 1 ADC1 SCB3 ABPS7 In SCB 3 / active bipolar prescaler input 2 ADC1 SCB3 ABPS8 In SCB 4 / active bipolar prescaler input 1 ADC2 SCB4 ABPS9 In SCB 4 / active bipolar prescaler input 2 ADC2 SCB4 ADC0 In ADC 0 direct input 0 / FPGA Input. ADC0 SCB0 See the "Sigma-Delta Digital-to-Analog Converter (DAC)" section in the SmartFusion Programmable Analog User’s Guide. ADC1 In ADC 0 direct input 1 / FPGA input ADC0 SCB0 ADC2 In ADC 0 direct input 2 / FPGA input ADC0 SCB1 ADC3 In ADC 0 direct input 3 / FPGA input ADC0 SCB1 ADC4 In ADC 1 direct input 0 / FPGA input ADC1 SCB2 ADC5 In ADC 1 direct input 1 / FPGA input ADC1 SCB2 ADC6 In ADC 1 direct input 2 / FPGA input ADC1 SCB3 ADC7 In ADC 1 direct input 3 / FPGA input ADC1 SCB3 ADC8 In ADC 2 direct input 0 / FPGA input ADC2 SCB4 ADC9 In ADC 2 direct input 1 / FPGA input ADC2 SCB4 ADC10 In ADC 2 direct input 2 / FPGA input ADC2 N/A ADC11 In ADC 2 direct input 3 / FPGA input ADC2 N/A CM0 In SCB 0 / high side of current monitor / comparator ADC0 SCB0 Positive input. See the Current Monitor section in the SmartFusion Programmable Analog User’s Guide. CM1 In SCB 1 / high side of current monitor / comparator. Positive input. ADC0 SCB1 CM2 In SCB 2 / high side of current monitor / comparator. Positive input. ADC1 SCB2 CM3 In SCB 3 / high side of current monitor / comparator. Positive input. ADC1 SCB3 CM4 In SCB 4 / high side of current monitor / comparator. Positive input. ADC2 SCB4 Note: Unused analog inputs should be grounded. This aids in shielding and prevents an undesired coupling path. 5- 14 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) Associated With Name TM0 Type In Description SCB 0 / low side of current monitor / comparator ADC/SDD SCB ADC0 SCB0 Negative input / high side of temperature monitor. See the Temperature Monitor section. TM1 In SCB 1 / low side of current monitor / comparator. Negative input / high side of temperature monitor. ADC0 SCB1 TM2 In SCB 2 / low side of current monitor / comparator. Negative input / high side of temperature monitor. ADC1 SCB2 TM3 In SCB 3 low side of current monitor / comparator. Negative input / high side of temperature monitor. ADC1 SCB3 TM4 In SCB 4 low side of current monitor / comparator. Negative input / high side of temperature monitor. ADC2 SCB4 Output of SDD0 SDD0 N/A SDD0 Out See the Sigma-Delta Digital-to-Analog Converter (DAC) section in the SmartFusion Programmable Analog User’s Guide. SDD1 Out Output of SDD1 SDD1 N/A SDD2 Out Output of SDD2 SDD2 N/A Note: Unused analog inputs should be grounded. This aids in shielding and prevents an undesired coupling path. R ev i si o n 1 0 5- 15 Pin Descriptions Analog Front-End Pin-Level Function Multiplexing Table 5-2 describes the relationships between the various internal signals found in the analog front-end (AFE) and how they are multiplexed onto the external package pins. Note that, in general, only one function is available for those pads that have numerous functions listed. The exclusion to this rule is when a comparator is used; the ADC can still convert either input side of the comparator. Table 5-2 • Relationships Between Signals in the Analog Front-End ADC Channel Dir.-In Current Option Prescaler Mon. ABPS0 ADC0_CH1 ABPS0_IN ABPS1 ADC0_CH2 ABPS1_IN ABPS2 ADC0_CH5 ABPS2_IN ABPS3 ADC0_CH6 ABPS3_IN ABPS4 ADC1_CH1 ABPS4_IN ABPS5 ADC1_CH2 ABPS5_IN ABPS6 ADC1_CH5 ABPS6_IN ABPS7 ADC1_CH6 ABPS7_IN ABPS8 ADC2_CH1 ABPS8_IN ABPS9 ADC2_CH2 ABPS9_IN ADC0 ADC0_CH9 ADC1 ADC0_CH10 Pin Temp. Mon. Compar. LVTTL SDD MUX Yes CMP1_P LVTTL0_IN Yes CMP1_N LVTTL1_IN SDDM0_OUT ADC2 ADC0_CH11 Yes CMP3_P LVTTL2_IN ADC3 ADC0_CH12 Yes CMP3_N LVTTL3_IN SDDM1_OUT ADC4 ADC1_CH9 Yes CMP5_P LVTTL4_IN ADC5 ADC1_CH10 Yes CMP5_N LVTTL5_IN SDDM2_OUT ADC6 ADC1_CH11 Yes CMP7_P LVTTL6_IN ADC7 ADC1_CH12 Yes CMP7_N LVTTL7_IN SDDM3_OUT ADC8 ADC2_CH9 Yes CMP9_P LVTTL8_IN ADC9 ADC2_CH10 Yes CMP9_N LVTTL9_IN SDDM4_OUT SDD ADC10 ADC2_CH11 Yes LVTTL10_IN ADC11 ADC2_CH12 Yes LVTTL11_IN CM0 ADC0_CH3 Yes CM0_H CMP0_P CM1 ADC0_CH7 Yes CM1_H CMP2_P CM2 ADC1_CH3 Yes CM2_H CMP4_P CM3 ADC1_CH7 Yes CM3_H CMP6_P CM4 ADC2_CH3 Yes CM4_H CMP8_P SDD0 ADC0_CH15 SDD0_OUT SDD1 ADC1_CH15 SDD1_OUT Notes: 1. 2. 3. 4. 5. 6. 7. ABPSx_IN: Input to active bipolar prescaler channel x. CMx_H/L: Current monitor channel x, high/low side. TMx_IO: Temperature monitor channel x. CMPx_P/N: Comparator channel x, positive/negative input. LVTTLx_IN: LVTTL I/O channel x. SDDMx_OUT: Output from sigma-delta DAC MUX channel x. SDDx_OUT: Direct output from sigma-delta DAC channel x. 5- 16 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) Table 5-2 • Relationships Between Signals in the Analog Front-End ADC Channel Pin Dir.-In Current Option Prescaler Mon. Temp. Mon. Compar. SDD2 ADC2_CH15 TM0 ADC0_CH4 Yes CM0_L TM0_IO CMP0_N TM1 ADC0_CH8 Yes CM1_L TM1_IO CMP2_N TM2 ADC1_CH4 Yes CM2_L TM2_IO CMP4_N TM3 ADC1_CH8 Yes CM3_L TM3_IO CMP6_N TM4 ADC2_CH4 Yes CM4_L TM4_IO CMP8_N LVTTL SDD MUX SDD SDD2_OUT Notes: 1. 2. 3. 4. 5. 6. 7. ABPSx_IN: Input to active bipolar prescaler channel x. CMx_H/L: Current monitor channel x, high/low side. TMx_IO: Temperature monitor channel x. CMPx_P/N: Comparator channel x, positive/negative input. LVTTLx_IN: LVTTL I/O channel x. SDDMx_OUT: Output from sigma-delta DAC MUX channel x. SDDx_OUT: Direct output from sigma-delta DAC channel x. R ev i si o n 1 0 5- 17 Pin Descriptions Pin Assignment Tables TQ144 144 1 144-Pin TQFP Note For Package Manufacturing and Environmental information, visit the Resource Center at http://www.microsemi.com/soc/products/solutions/ package/docs.aspx. 5- 18 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) TQ144 TQ144 Pin Number A2F060 Function Pin Number A2F060 Function 1 VCCPLL0 37 VCC33AP 2 VCOMPLA0 38 VCC33N 3 GNDQ 39 SDD0 4 GFA2/IO42PDB5V0 40 GNDA 5 GFB2/IO42NDB5V0 41 GNDAQ 6 GFC2/IO41PDB5V0 42 GNDAQ 7 IO41NDB5V0 43 ADC0 8 VCC 44 ADC1 9 GND 45 ADC2 10 VCCFPGAIOB5 46 ADC3 11 IO38PDB5V0 47 ADC4 12 IO38NDB5V0 48 ADC5 13 IO36PDB5V0 49 ADC6 14 IO36NDB5V0 50 ADC7 15 GND 51 ADC8 16 GNDRCOSC 52 ADC9 17 VCCRCOSC 53 ADC10 18 MSS_RESET_N 54 NC 19 GPIO_0/IO33RSB4V0 55 NC 20 GPIO_1/IO32RSB4V0 56 NC 21 GPIO_2/IO31RSB4V0 57 GND15ADC0 22 GPIO_3/IO30RSB4V0 58 VCC15ADC0 23 GPIO_4/IO29RSB4V0 59 GND33ADC0 24 GND 60 VCC33ADC0 25 VCCMSSIOB4 61 GND33ADC0 26 VCC 62 VAREF0 27 GPIO_5/IO28RSB4V0 63 ABPS0 28 GPIO_6/IO27RSB4V0 64 ABPS1 29 GPIO_7/IO26RSB4V0 65 CM0 30 GPIO_8/IO25RSB4V0 66 TM0 31 VCCESRAM 67 GNDTM0 32 GNDSDD0 68 GNDAQ 33 VCC33SDD0 69 GNDA 34 VCC15A 70 GNDVAREF 35 PCAP 71 VAREFOUT 36 NCAP 72 PU_N R ev i si o n 1 0 5- 19 Pin Descriptions TQ144 5- 20 Pin Number A2F060 Function 73 VCC33A 74 PTEM 75 PTBASE 76 SPI_0_DO/GPIO_16 77 SPI_0_DI/GPIO_17 78 SPI_0_CLK/GPIO_18 79 SPI_0_SS/GPIO_19 80 UART_0_RXD/GPIO_21 81 UART_0_TXD/GPIO_20 82 UART_1_RXD/GPIO_29 83 UART_1_TXD/GPIO_28 84 VCC 85 VCCMSSIOB2 86 GND 87 I2C_1_SDA/GPIO_30 88 I2C_1_SCL/GPIO_31 89 I2C_0_SDA/GPIO_22 90 I2C_0_SCL/GPIO_23 91 GNDENVM 92 VCCENVM 93 JTAGSEL 94 TCK 95 TDI 96 TMS 97 TDO 98 TRSTB 99 VJTAG 100 VDDBAT 101 VCCLPXTAL 102 LPXOUT 103 LPXIN 104 GNDLPXTAL 105 GNDMAINXTAL 106 MAINXOUT 107 MAINXIN 108 VCCMAINXTAL R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) TQ144 Pin Number A2F060 Function 109 VPP 110 GNDQ 111 GCA1/IO20PDB0V0 112 GCA0/IO20NDB0V0 113 GCB1/IO19PDB0V0 114 GCB0/IO19NDB0V0 115 GCC1/IO18PDB0V0 116 GCC0/IO18NDB0V0 117 VCCFPGAIOB0 118 GND 119 VCC 120 IO14PDB0V0 121 IO14NDB0V0 122 IO13NSB0V0 123 IO11PDB0V0 124 IO11NDB0V0 125 IO09PDB0V0 126 IO09NDB0V0 127 VCCFPGAIOB0 128 GND 129 IO07PDB0V0 130 IO07NDB0V0 131 IO06PDB0V0 132 IO06NDB0V0 133 IO05PDB0V0 134 IO05NDB0V0 135 IO03PDB0V0 136 IO03NDB0V0 137 VCCFPGAIOB0 138 GND 139 VCC 140 IO01PDB0V0 141 IO01NDB0V0 142 IO00PDB0V0 143 IO00NDB0V0 144 GNDQ R ev i si o n 1 0 5- 21 Pin Descriptions CS288 A1 Ball Pad Corner 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 A B C D E F G H J K L M N P R T U V W Y AA Note: Bottom view Note For Package Manufacturing and Environmental information, visit the Resource Center at http://www.microsemi.com/soc/products/solutions/package/docs.aspx. 5- 22 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) CS288 Pin No. A2F060 Function A2F200 Function A2F500 Function A1 VCCFPGAIOB0 VCCFPGAIOB0 VCCFPGAIOB0 A2 GNDQ GNDQ GNDQ A3 EMC_CLK/IO00NDB0V0 EMC_CLK/GAA0/IO00NDB0V0 EMC_CLK/GAA0/IO02NDB0V0 A4 EMC_RW_N/IO00PDB0V0 EMC_RW_N/GAA1/IO00PDB0V0 EMC_RW_N/GAA1/IO02PDB0V0 A5 GND GND GND A6 EMC_CS1_N/IO01PDB0V0 EMC_CS1_N/GAB1/IO01PDB0V0 EMC_CS1_N/GAB1/IO05PDB0V0 A7 EMC_CS0_N/IO01NDB0V0 EMC_CS0_N/GAB0/IO01NDB0V0 EMC_CS0_N/GAB0/IO05NDB0V0 A8 EMC_AB[0]/IO04NPB0V0 EMC_AB[0]/IO04NPB0V0 EMC_AB[0]/IO06NPB0V0 A9 VCCFPGAIOB0 VCCFPGAIOB0 VCCFPGAIOB0 A10 EMC_AB[4]/IO06NDB0V0 EMC_AB[4]/IO06NDB0V0 EMC_AB[4]/IO10NDB0V0 A11 EMC_AB[8]/IO08NPB0V0 EMC_AB[8]/IO08NPB0V0 EMC_AB[8]/IO13NPB0V0 A12 EMC_AB[14]/IO11NPB0V0 EMC_AB[14]/IO11NPB0V0 EMC_AB[14]/IO15NPB0V0 A13 GND GND GND A14 EMC_AB[18]/IO13NDB0V0 EMC_AB[18]/IO13NDB0V0 EMC_AB[18]/IO18NDB0V0 A15 EMC_AB[24]/IO16NDB0V0 EMC_AB[24]/IO16NDB0V0 EMC_AB[24]/IO20NDB0V0 A16 EMC_AB[25]/IO16PDB0V0 EMC_AB[25]/IO16PDB0V0 EMC_AB[25]/IO20PDB0V0 A17 VCCFPGAIOB0 VCCFPGAIOB0 VCCFPGAIOB0 A18 EMC_AB[20]/IO14NDB0V0 EMC_AB[20]/IO14NDB0V0 EMC_AB[20]/IO21NDB0V0 A19 EMC_AB[21]/IO14PDB0V0 EMC_AB[21]/IO14PDB0V0 EMC_AB[21]/IO21PDB0V0 A20 GNDQ GNDQ GNDQ A21 GND GND GND AA1 ADC1 ABPS1 ABPS1 AA2 GNDAQ GNDAQ GNDAQ AA3 GNDA GNDA GNDA AA4 VCC33N VCC33N VCC33N AA5 SDD0 SDD0 SDD0 AA6 ADC0 ABPS0 ABPS0 AA7 NC GNDTM0 GNDTM0 AA8 NC ABPS2 ABPS2 AA9 NC VAREF0 VAREF0 AA10 NC GND15ADC0 GND15ADC0 AA11 ADC9 ADC6 ADC6 AA12 ABPS1 ABPS7 ABPS7 AA13 ADC6 TM2 TM2 Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the bank assignment can be different for an I/O, or the function might be available only on a larger density device. R ev i si o n 1 0 5- 23 Pin Descriptions CS288 Pin No. A2F060 Function A2F200 Function A2F500 Function AA14 NC ABPS4 ABPS4 AA15 NC SDD1 SDD1 AA16 GNDVAREF GNDVAREF GNDVAREF AA17 VAREFOUT VAREFOUT VAREFOUT AA18 PU_N PU_N PU_N AA19 VCC33A VCC33A VCC33A AA20 PTEM PTEM PTEM AA21 GND GND GND B1 GND GND GND B21 IO17PDB0V0 GBB2/IO20NDB1V0 GBB2/IO27NDB1V0 C1 EMC_DB[15]/IO45PDB5V0 EMC_DB[15]/GAA2/IO71PDB5V0 EMC_DB[15]/GAA2/IO88PDB5V0 C3 VCOMPLA0 VCOMPLA VCOMPLA0 C4 VCCPLL0 VCCPLL VCCPLL0 C5 VCCFPGAIOB0 VCCFPGAIOB0 VCCFPGAIOB0 C6 EMC_AB[1]/IO04PPB0V0 EMC_AB[1]/IO04PPB0V0 EMC_AB[1]/IO06PPB0V0 C7 GND GND GND C8 EMC_OEN0_N/IO03NDB0V0 EMC_OEN0_N/IO03NDB0V0 EMC_OEN0_N/IO08NDB0V0 C9 EMC_AB[2]/IO05NDB0V0 EMC_AB[2]/IO05NDB0V0 EMC_AB[2]/IO09NDB0V0 C10 EMC_AB[5]/IO06PDB0V0 EMC_AB[5]/IO06PDB0V0 EMC_AB[5]/IO10PDB0V0 C11 VCCFPGAIOB0 VCCFPGAIOB0 VCCFPGAIOB0 C12 EMC_AB[9]/IO08PPB0V0 EMC_AB[9]/IO08PPB0V0 EMC_AB[9]/IO13PPB0V0 C13 EMC_AB[15]/IO11PPB0V0 EMC_AB[15]/IO11PPB0V0 EMC_AB[15]/IO15PPB0V0 C14 EMC_AB[19]/IO13PDB0V0 EMC_AB[19]/IO13PDB0V0 EMC_AB[19]/IO18PDB0V0 C15 GND GND GND C16 EMC_AB[22]/IO15NDB0V0 EMC_AB[22]/IO15NDB0V0 EMC_AB[22]/IO19NDB0V0 C17 EMC_AB[23]/IO15PDB0V0 EMC_AB[23]/IO15PDB0V0 EMC_AB[23]/IO19PDB0V0 C18 NC NC VCCPLL1 C19 NC NC VCOMPLA1 C21 IO17NDB0V0 GBA2/IO20PDB1V0 GBA2/IO27PDB1V0 D1 EMC_DB[14]/IO45NDB5V0 EMC_DB[14]/GAB2/IO71NDB5V0 EMC_DB[14]/GAB2/IO88NDB5V0 D3 VCCFPGAIOB5 VCCFPGAIOB5 VCCFPGAIOB5 D19 GND GND GND D21 VCCFPGAIOB1 VCCFPGAIOB1 VCCFPGAIOB1 E1 EMC_DB[13]/IO44PDB5V0 EMC_DB[13]/GAC2/IO70PDB5V0 EMC_DB[13]/GAC2/IO87PDB5V0 Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the bank assignment can be different for an I/O, or the function might be available only on a larger density device. 5- 24 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) CS288 Pin No. A2F060 Function A2F200 Function A2F500 Function E3 EMC_DB[12]/IO44NDB5V0 EMC_DB[12]/IO70NDB5V0 EMC_DB[12]/IO87NDB5V0 E5 GNDQ GNDQ GNDQ E6 EMC_BYTEN[0]/IO02NDB0V0 EMC_BYTEN[0]/GAC0/IO02NDB0V0 EMC_BYTEN[0]/GAC0/IO07NDB0V0 E7 EMC_BYTEN[1]/IO02PDB0V0 E8 EMC_OEN1_N/IO03PDB0V0 EMC_OEN1_N/IO03PDB0V0 EMC_OEN1_N/IO08PDB0V0 E9 EMC_AB[3]/IO05PDB0V0 EMC_AB[3]/IO05PDB0V0 EMC_AB[3]/IO09PDB0V0 E10 EMC_AB[10]/IO09NDB0V0 EMC_AB[10]/IO09NDB0V0 EMC_AB[10]/IO11NDB0V0 E11 EMC_AB[7]/IO07PDB0V0 EMC_AB[7]/IO07PDB0V0 EMC_AB[7]/IO12PDB0V0 E12 EMC_AB[13]/IO10PDB0V0 EMC_AB[13]/IO10PDB0V0 EMC_AB[13]/IO14PDB0V0 E13 EMC_AB[16]/IO12NDB0V0 EMC_AB[16]/IO12NDB0V0 EMC_AB[16]/IO17NDB0V0 E14 EMC_AB[17]/IO12PDB0V0 EMC_AB[17]/IO12PDB0V0 EMC_AB[17]/IO17PDB0V0 E15 GCC0/IO18NPB0V0 GCB0/IO27NDB1V0 GCB0/IO34NDB1V0 E16 GCA1/IO20PPB0V0 GCB1/IO27PDB1V0 GCB1/IO34PDB1V0 E17 GCC1/IO18PPB0V0 GCB2/IO24PDB1V0 GCB2/IO33PDB1V0 E19 GCB2/IO22PPB1V0 GCA0/IO28NDB1V0 GCA0/IO36NDB1V0 E21 IO21NDB1V0 GCA1/IO28PDB1V0 GCA1/IO36PDB1V0 F1 VCCFPGAIOB5 VCCFPGAIOB5 VCCFPGAIOB5 F3 GFB2/IO42NDB5V0 GFB2/IO68NDB5V0 GFB2/IO85NDB5V0 F5 GFA2/IO42PDB5V0 GFA2/IO68PDB5V0 GFA2/IO85PDB5V0 F6 EMC_DB[11]/IO43PDB5V0 EMC_DB[11]/IO69PDB5V0 EMC_DB[11]/IO86PDB5V0 F7 GND GND GND F8 NC GFC1/IO66PPB5V0 GFC1/IO83PPB5V0 F9 VCCFPGAIOB0 VCCFPGAIOB0 VCCFPGAIOB0 F10 EMC_AB[11]/IO09PDB0V0 EMC_AB[11]/IO09PDB0V0 EMC_AB[11]/IO11PDB0V0 F11 EMC_AB[6]/IO07NDB0V0 EMC_AB[6]/IO07NDB0V0 EMC_AB[6]/IO12NDB0V0 F12 EMC_AB[12]/IO10NDB0V0 EMC_AB[12]/IO10NDB0V0 EMC_AB[12]/IO14NDB0V0 F13 GND GND GND F14 GCB1/IO19PPB0V0 GCC1/IO26PPB1V0 GCC1/IO35PPB1V0 F15 GNDQ GNDQ GNDQ F16 VCCFPGAIOB1 VCCFPGAIOB1 VCCFPGAIOB1 F17 GCB0/IO19NPB0V0 IO24NDB1V0 IO33NDB1V0 F19 IO23NDB1V0 GDB1/IO30PDB1V0 GDB1/IO39PDB1V0 F21 GCA2/IO21PDB1V0 GDB0/IO30NDB1V0 GDB0/IO39NDB1V0 G1 IO41NDB5V0 IO67NDB5V0 IO84NDB5V0 EMC_BYTEN[1]/GAC1/IO02PDB0V0 EMC_BYTEN[1]/GAC1/IO07PDB0V0 Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the bank assignment can be different for an I/O, or the function might be available only on a larger density device. R ev i si o n 1 0 5- 25 Pin Descriptions CS288 Pin No. A2F060 Function A2F200 Function A2F500 Function G3 GFC2/IO41PDB5V0 GFC2/IO67PDB5V0 GFC2/IO84PDB5V0 G5 NC GFB1/IO65PDB5V0 GFB1/IO82PDB5V0 G6 EMC_DB[10]/IO43NDB5V0 EMC_DB[10]/IO69NDB5V0 EMC_DB[10]/IO86NDB5V0 G9 NC GFC0/IO66NPB5V0 GFC0/IO83NPB5V0 G13 GCA0/IO20NPB0V0 GCC0/IO26NPB1V0 GCC0/IO35NPB1V0 G16 NC GDA0/IO31NDB1V0 GDA0/IO40NDB1V0 G17 IO22NPB1V0 GDC1/IO29PDB1V0 GDC1/IO38PDB1V0 G19 GCC2/IO23PDB1V0 GDC0/IO29NDB1V0 GDC0/IO38NDB1V0 G21 GND GND GND H1 EMC_DB[9]/IO40PPB5V0 EMC_DB[9]/GEC1/IO63PPB5V0 EMC_DB[9]/GEC1/IO80PPB5V0 H3 GND GND GND H5 NC GFB0/IO65NDB5V0 GFB0/IO82NDB5V0 H6 EMC_DB[7]/IO39PDB5V0 EMC_DB[7]/GEB1/IO62PDB5V0 EMC_DB[7]/GEB1/IO79PDB5V0 H8 GND GND GND H9 VCC VCC VCC H10 GND GND GND H11 VCC VCC VCC H12 GND GND GND H13 VCC VCC VCC H14 GND GND GND H16 NC GDA1/IO31PDB1V0 GDA1/IO40PDB1V0 H17 NC GDC2/IO32PPB1V0 GDC2/IO41PPB1V0 H19 VCCFPGAIOB1 VCCFPGAIOB1 VCCFPGAIOB1 H21 NC GDB2/IO33PDB1V0 GDB2/IO42PDB1V0 J1 EMC_DB[4]/IO38NPB5V0 EMC_DB[4]/GEA0/IO61NPB5V0 EMC_DB[4]/GEA0/IO78NPB5V0 J3 EMC_DB[8]/IO40NPB5V0 EMC_DB[8]/GEC0/IO63NPB5V0 EMC_DB[8]/GEC0/IO80NPB5V0 J5 EMC_DB[1]/IO36PDB5V0 EMC_DB[1]/GEB2/IO59PDB5V0 EMC_DB[1]/GEB2/IO76PDB5V0 J6 EMC_DB[6]/IO39NDB5V0 EMC_DB[6]/GEB0/IO62NDB5V0 EMC_DB[6]/GEB0/IO79NDB5V0 J7 VCCFPGAIOB5 VCCFPGAIOB5 VCCFPGAIOB5 J8 VCC VCC VCC J9 GND GND GND J10 VCC VCC VCC J11 GND GND GND J12 VCC VCC VCC Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the bank assignment can be different for an I/O, or the function might be available only on a larger density device. 5- 26 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) CS288 Pin No. A2F060 Function A2F200 Function A2F500 Function J13 GND GND GND J14 VCC VCC VCC J15 VPP VPP VPP J16 NC IO32NPB1V0 IO41NPB1V0 J17 NC GNDQ GNDQ J19 VCCMAINXTAL VCCMAINXTAL VCCMAINXTAL J21 NC GDA2/IO33NDB1V0 GDA2/IO42NDB1V0 K1 GND GND GND K3 EMC_DB[5]/IO38PPB5V0 EMC_DB[5]/GEA1/IO61PPB5V0 EMC_DB[5]/GEA1/IO78PPB5V0 K5 EMC_DB[0]/IO36NDB5V0 EMC_DB[0]/GEA2/IO59NDB5V0 EMC_DB[0]/GEA2/IO76NDB5V0 K6 EMC_DB[3]/IO37PPB5V0 EMC_DB[3]/GEC2/IO60PPB5V0 EMC_DB[3]/GEC2/IO77PPB5V0 K8 GND GND GND K9 VCC VCC VCC K10 GND GND GND K11 VCC VCC VCC K12 GND GND GND K13 VCC VCC VCC K14 GND GND GND K16 LPXOUT LPXOUT LPXOUT K17 GNDLPXTAL GNDLPXTAL GNDLPXTAL K19 GNDMAINXTAL GNDMAINXTAL GNDMAINXTAL K21 MAINXIN MAINXIN MAINXIN L1 GNDRCOSC GNDRCOSC GNDRCOSC L3 VCCFPGAIOB5 VCCFPGAIOB5 VCCFPGAIOB5 L5 EMC_DB[2]/IO37NPB5V0 EMC_DB[2]/IO60NPB5V0 EMC_DB[2]/IO77NPB5V0 L6 NC GNDQ GNDQ L8 VCC VCC VCC L9 GND GND GND L10 VCC VCC VCC L12 VCC VCC VCC L13 GND GND GND L14 VCC VCC VCC L16 VCCLPXTAL VCCLPXTAL VCCLPXTAL L17 VDDBAT VDDBAT VDDBAT Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the bank assignment can be different for an I/O, or the function might be available only on a larger density device. R ev i si o n 1 0 5- 27 Pin Descriptions CS288 Pin No. A2F060 Function A2F200 Function A2F500 Function L19 LPXIN LPXIN LPXIN L21 MAINXOUT MAINXOUT MAINXOUT M1 VCCRCOSC VCCRCOSC VCCRCOSC M3 MSS_RESET_N MSS_RESET_N MSS_RESET_N M5 GPIO_5/IO28RSB4V0 GPIO_5/IO42RSB4V0 GPIO_5/IO51RSB4V0 M6 GND GND GND M8 GND GND GND M9 VCC VCC VCC M10 GND GND GND M11 VCC VCC VCC M12 GND GND GND M13 VCC VCC VCC M14 GND GND GND M16 TMS TMS TMS M17 VJTAG VJTAG VJTAG M19 TDO TDO TDO M21 TRSTB TRSTB TRSTB N1 VCCMSSIOB4 VCCMSSIOB4 VCCMSSIOB4 N3 GND GND GND N5 GPIO_4/IO29RSB4V0 GPIO_4/IO43RSB4V0 GPIO_4/IO52RSB4V0 N6 GPIO_8/IO25RSB4V0 GPIO_8/IO39RSB4V0 GPIO_8/IO48RSB4V0 N7 GPIO_9/IO24RSB4V0 GPIO_9/IO38RSB4V0 GPIO_9/IO47RSB4V0 N8 VCC VCC VCC N9 GND GND GND N10 VCC VCC VCC N11 GND GND GND N12 VCC VCC VCC N13 GND GND GND N14 VCC VCC VCC N15 GND GND GND N16 TCK TCK TCK N17 TDI TDI TDI N19 GNDENVM GNDENVM GNDENVM N21 VCCENVM VCCENVM VCCENVM Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the bank assignment can be different for an I/O, or the function might be available only on a larger density device. 5- 28 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) CS288 Pin No. A2F060 Function A2F200 Function A2F500 Function P1 GPIO_0/IO33RSB4V0 MAC_MDC/IO48RSB4V0 MAC_MDC/IO57RSB4V0 P3 GPIO_7/IO26RSB4V0 GPIO_7/IO40RSB4V0 GPIO_7/IO49RSB4V0 P5 GPIO_6/IO27RSB4V0 GPIO_6/IO41RSB4V0 GPIO_6/IO50RSB4V0 P6 VCCMSSIOB4 VCCMSSIOB4 VCCMSSIOB4 P8 GND GND GND P9 VCC VCC VCC P10 GND GND GND P11 VCC VCC VCC P12 GND GND GND P13 VCC VCC VCC P14 GND GND GND P16 JTAGSEL JTAGSEL JTAGSEL P17 I2C_0_SCL/GPIO_23 I2C_0_SCL/GPIO_23 I2C_0_SCL/GPIO_23 P19 VCCMSSIOB2 VCCMSSIOB2 VCCMSSIOB2 P21 GND GND GND R1 GPIO_2/IO31RSB4V0 MAC_MDIO/IO49RSB4V0 MAC_MDIO/IO58RSB4V0 R3 GPIO_1/IO32RSB4V0 MAC_TXEN/IO52RSB4V0 MAC_TXEN/IO61RSB4V0 R5 GPIO_3/IO30RSB4V0 MAC_TXD[0]/IO56RSB4V0 MAC_TXD[0]/IO65RSB4V0 R6 GPIO_10/IO35RSB4V0 MAC_CRSDV/IO51RSB4V0 MAC_CRSDV/IO60RSB4V0 R9 GNDA GNDA GNDA R13 GNDA GNDA GNDA R16 UART_1_RXD/GPIO_29 UART_1_RXD/GPIO_29 UART_1_RXD/GPIO_29 R17 UART_1_TXD/GPIO_28 UART_1_TXD/GPIO_28 UART_1_TXD/GPIO_28 R19 I2C_0_SDA/GPIO_22 I2C_0_SDA/GPIO_22 I2C_0_SDA/GPIO_22 R21 I2C_1_SDA/GPIO_30 I2C_1_SDA/GPIO_30 I2C_1_SDA/GPIO_30 T1 GND GND GND T3 NC MAC_TXD[1]/IO55RSB4V0 MAC_TXD[1]/IO64RSB4V0 T5 NC MAC_RXD[1]/IO53RSB4V0 MAC_RXD[1]/IO62RSB4V0 T6 GPIO_11/IO34RSB4V0 MAC_RXER/IO50RSB4V0 MAC_RXER/IO59RSB4V0 T7 NC CM1 CM1 T8 NC ADC1 ADC1 T9 NC GND33ADC0 GND33ADC0 T10 NC VCC15ADC0 VCC15ADC0 T11 GND33ADC0 GND33ADC1 GND33ADC1 Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the bank assignment can be different for an I/O, or the function might be available only on a larger density device. R ev i si o n 1 0 5- 29 Pin Descriptions CS288 Pin No. A2F060 Function A2F200 Function A2F500 Function T12 VAREF0 VAREF1 VAREF1 T13 ADC7 ADC4 ADC4 T14 TM0 TM3 TM3 T15 SPI_1_SS/GPIO_27 SPI_1_SS/GPIO_27 SPI_1_SS/GPIO_27 T16 VCCMSSIOB2 VCCMSSIOB2 VCCMSSIOB2 T17 UART_0_RXD/GPIO_21 UART_0_RXD/GPIO_21 UART_0_RXD/GPIO_21 T19 UART_0_TXD/GPIO_20 UART_0_TXD/GPIO_20 UART_0_TXD/GPIO_20 T21 I2C_1_SCL/GPIO_31 I2C_1_SCL/GPIO_31 I2C_1_SCL/GPIO_31 U1 NC MAC_RXD[0]/IO54RSB4V0 MAC_RXD[0]/IO63RSB4V0 U3 VCCMSSIOB4 VCCMSSIOB4 VCCMSSIOB4 U5 VCC33SDD0 VCC33SDD0 VCC33SDD0 U6 VCC15A VCC15A VCC15A U7 NC ABPS3 ABPS3 U8 NC ADC2 ADC2 U9 NC VCC33ADC0 VCC33ADC0 U10 GND15ADC0 GND15ADC1 GND15ADC1 U11 VCC33ADC0 VCC33ADC1 VCC33ADC1 U12 ADC10 ADC7 ADC7 U13 ABPS0 ABPS6 ABPS6 U14 GNDTM0 GNDTM1 GNDTM1 U15 SPI_1_CLK/GPIO_26 SPI_1_CLK/GPIO_26 SPI_1_CLK/GPIO_26 U16 SPI_0_CLK/GPIO_18 SPI_0_CLK/GPIO_18 SPI_0_CLK/GPIO_18 U17 SPI_0_SS/GPIO_19 SPI_0_SS/GPIO_19 SPI_0_SS/GPIO_19 U19 GND GND GND U21 SPI_1_DO/GPIO_24 SPI_1_DO/GPIO_24 SPI_1_DO/GPIO_24 V1 NC MAC_CLK MAC_CLK V3 GNDSDD0 GNDSDD0 GNDSDD0 V19 SPI_1_DI/GPIO_25 SPI_1_DI/GPIO_25 SPI_1_DI/GPIO_25 V21 VCCMSSIOB2 VCCMSSIOB2 VCCMSSIOB2 W1 PCAP PCAP PCAP W3 NCAP NCAP NCAP W4 ADC2 CM0 CM0 W5 ADC3 TM0 TM0 W6 ADC4 TM1 TM1 Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the bank assignment can be different for an I/O, or the function might be available only on a larger density device. 5- 30 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) CS288 Pin No. A2F060 Function A2F200 Function A2F500 Function W7 NC ADC0 ADC0 W8 NC ADC3 ADC3 W9 NC GND33ADC0 GND33ADC0 W10 VCC15ADC0 VCC15ADC1 VCC15ADC1 W11 GND33ADC0 GND33ADC1 GND33ADC1 W12 ADC8 ADC5 ADC5 W13 CM0 CM3 CM3 W14 ADC5 CM2 CM2 W15 NC ABPS5 ABPS5 W16 GNDAQ GNDAQ GNDAQ W17 NC VCC33SDD1 VCC33SDD1 W18 NC GNDSDD1 GNDSDD1 W19 PTBASE PTBASE PTBASE W21 SPI_0_DI/GPIO_17 SPI_0_DI/GPIO_17 SPI_0_DI/GPIO_17 Y1 VCC33AP VCC33AP VCC33AP Y21 SPI_0_DO/GPIO_16 SPI_0_DO/GPIO_16 SPI_0_DO/GPIO_16 Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the bank assignment can be different for an I/O, or the function might be available only on a larger density device. R ev i si o n 1 0 5- 31 Pin Descriptions PQ208 1 208 208-Pin PQFP Note For Package Manufacturing and Environmental information, visit the Resource Center at http://www.microsemi.com/soc/products/solutions/package/docs.aspx. 5- 32 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) PQ208 Pin Number A2F200 A2F500 1 VCCPLL VCCPLL0 2 VCOMPLA VCOMPLA0 3 GNDQ GNDQ 4 EMC_DB[15]/GAA2/IO71PDB5V0 GAA2/IO88PDB5V0 5 EMC_DB[14]/GAB2/IO71NDB5V0 GAB2/IO88NDB5V0 6 EMC_DB[13]/GAC2/IO70PDB5V0 GAC2/IO87PDB5V0 7 EMC_DB[12]/IO70NDB5V0 IO87NDB5V0 8 VCC VCC 9 GND GND 10 VCCFPGAIOB5 VCCFPGAIOB5 11 EMC_DB[11]/IO69PDB5V0 IO86PDB5V0 12 EMC_DB[10]/IO69NDB5V0 IO86NDB5V0 13 GFA2/IO68PSB5V0 GFA2/IO85PSB5V0 14 GFA1/IO64PDB5V0 GFA1/IO81PDB5V0 15 GFA0/IO64NDB5V0 GFA0/IO81NDB5V0 16 EMC_DB[9]/GEC1/IO63PDB5V0 GEC1/IO80PDB5V0 17 EMC_DB[8]/GEC0/IO63NDB5V0 GEC0/IO80NDB5V0 18 EMC_DB[7]/GEB1/IO62PDB5V0 GEB1/IO79PDB5V0 19 EMC_DB[6]/GEB0/IO62NDB5V0 GEB0/IO79NDB5V0 20 EMC_DB[5]/GEA1/IO61PDB5V0 GEA1/IO78PDB5V0 21 EMC_DB[4]/GEA0/IO61NDB5V0 GEA0/IO78NDB5V0 22 VCC VCC 23 GND GND 24 VCCFPGAIOB5 VCCFPGAIOB5 25 EMC_DB[3]/GEC2/IO60PDB5V0 GEC2/IO77PDB5V0 26 EMC_DB[2]/IO60NDB5V0 IO77NDB5V0 27 EMC_DB[1]/GEB2/IO59PDB5V0 GEB2/IO76PDB5V0 28 EMC_DB[0]/GEA2/IO59NDB5V0 GEA2/IO76NDB5V0 29 VCC VCC 30 GND GND 31 GNDRCOSC GNDRCOSC 32 VCCRCOSC VCCRCOSC 33 MSS_RESET_N MSS_RESET_N 34 VCCESRAM VCCESRAM 35 MAC_MDC/IO48RSB4V0 MAC_MDC/IO57RSB4V0 36 MAC_MDIO/IO49RSB4V0 MAC_MDIO/IO58RSB4V0 R ev i si o n 1 0 5- 33 Pin Descriptions PQ208 5- 34 Pin Number A2F200 A2F500 37 MAC_TXEN/IO52RSB4V0 MAC_TXEN/IO61RSB4V0 38 MAC_CRSDV/IO51RSB4V0 MAC_CRSDV/IO60RSB4V0 39 MAC_RXER/IO50RSB4V0 MAC_RXER/IO59RSB4V0 40 GND GND 41 VCCMSSIOB4 VCCMSSIOB4 42 VCC VCC 43 MAC_TXD[0]/IO56RSB4V0 MAC_TXD[0]/IO65RSB4V0 44 MAC_TXD[1]/IO55RSB4V0 MAC_TXD[1]/IO64RSB4V0 45 MAC_RXD[0]/IO54RSB4V0 MAC_RXD[0]/IO63RSB4V0 46 MAC_RXD[1]/IO53RSB4V0 MAC_RXD[1]/IO62RSB4V0 47 MAC_CLK MAC_CLK 48 GNDSDD0 GNDSDD0 49 VCC33SDD0 VCC33SDD0 50 VCC15A VCC15A 51 PCAP PCAP 52 NCAP NCAP 53 VCC33AP VCC33AP 54 VCC33N VCC33N 55 SDD0 SDD0 56 GNDA GNDA 57 GNDAQ GNDAQ 58 ABPS0 ABPS0 59 ABPS1 ABPS1 60 CM0 CM0 61 TM0 TM0 62 GNDTM0 GNDTM0 63 TM1 TM1 64 CM1 CM1 65 ABPS3 ABPS3 66 ABPS2 ABPS2 67 ADC0 ADC0 68 ADC1 ADC1 69 ADC2 ADC2 70 ADC3 ADC3 71 VAREF0 VAREF0 72 GND33ADC0 GND33ADC0 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) PQ208 Pin Number A2F200 A2F500 73 VCC33ADC0 VCC33ADC0 74 GND33ADC0 GND33ADC0 75 VCC15ADC0 VCC15ADC0 76 GND15ADC0 GND15ADC0 77 GND15ADC1 GND15ADC1 78 VCC15ADC1 VCC15ADC1 79 GND33ADC1 GND33ADC1 80 VCC33ADC1 VCC33ADC1 81 GND33ADC1 GND33ADC1 82 VAREF1 VAREF1 83 ADC7 ADC7 84 ADC6 ADC6 85 ADC5 ADC5 86 ADC4 ADC4 87 ABPS6 ABPS6 88 ABPS7 ABPS7 89 CM3 CM3 90 TM3 TM3 91 GNDTM1 GNDTM1 92 TM2 TM2 93 CM2 CM2 94 ABPS5 ABPS5 95 ABPS4 ABPS4 96 GNDAQ GNDAQ 97 GNDA GNDA 98 NC NC 99 GNDVAREF GNDVAREF 100 VAREFOUT VAREFOUT 101 PU_N PU_N 102 VCC33A VCC33A 103 PTEM PTEM 104 PTBASE PTBASE 105 SPI_0_DO/GPIO_16 SPI_0_DO/GPIO_16 106 SPI_0_DI/GPIO_17 SPI_0_DI/GPIO_17 107 SPI_0_CLK/GPIO_18 SPI_0_CLK/GPIO_18 108 SPI_0_SS/GPIO_19 SPI_0_SS/GPIO_19 R ev i si o n 1 0 5- 35 Pin Descriptions PQ208 5- 36 Pin Number A2F200 A2F500 109 UART_0_RXD/GPIO_21 UART_0_RXD/GPIO_21 110 UART_0_TXD/GPIO_20 UART_0_TXD/GPIO_20 111 UART_1_RXD/GPIO_29 UART_1_RXD/GPIO_29 112 UART_1_TXD/GPIO_28 UART_1_TXD/GPIO_28 113 VCC VCC 114 VCCMSSIOB2 VCCMSSIOB2 115 GND GND 116 I2C_1_SDA/GPIO_30 I2C_1_SDA/GPIO_30 117 I2C_1_SCL/GPIO_31 I2C_1_SCL/GPIO_31 118 I2C_0_SDA/GPIO_22 I2C_0_SDA/GPIO_22 119 I2C_0_SCL/GPIO_23 I2C_0_SCL/GPIO_23 120 GNDENVM GNDENVM 121 VCCENVM VCCENVM 122 JTAGSEL JTAGSEL 123 TCK TCK 124 TDI TDI 125 TMS TMS 126 TDO TDO 127 TRSTB TRSTB 128 VJTAG VJTAG 129 VDDBAT VDDBAT 130 VCCLPXTAL VCCLPXTAL 131 LPXOUT LPXOUT 132 LPXIN LPXIN 133 GNDLPXTAL GNDLPXTAL 134 GNDMAINXTAL GNDMAINXTAL 135 MAINXOUT MAINXOUT 136 MAINXIN MAINXIN 137 VCCMAINXTAL VCCMAINXTAL 138 GND GND 139 VCC VCC 140 VPP VPP 141 VCCFPGAIOB1 VCCFPGAIOB1 142 GDA0/IO31NDB1V0 GDA0/IO40NDB1V0 143 GDA1/IO31PDB1V0 GDA1/IO40PDB1V0 144 GDC0/IO29NSB1V0 GDC0/IO38NSB1V0 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) PQ208 Pin Number A2F200 A2F500 145 GCA0/IO28NDB1V0 GCA0/IO36NDB1V0 146 GCA1/IO28PDB1V0 GCA1/IO36PDB1V0 147 VCCFPGAIOB1 VCCFPGAIOB1 148 GND GND 149 VCC VCC 150 IO25NDB1V0 IO30NDB1V0 151 GCC2/IO25PDB1V0 GBC2/IO30PDB1V0 152 IO23NDB1V0 IO28NDB1V0 153 GCA2/IO23PDB1V0 GCA2/IO28PDB1V0 154 GBC2/IO21PSB1V0 GBB2/IO27NDB1V0 155 GBA2/IO20PSB1V0 GBA2/IO27PDB1V0 156 GNDQ GNDQ 157 GNDQ GNDQ 158 VCCFPGAIOB0 VCCFPGAIOB0 159 GBA1/IO19PDB0V0 GBA1/IO23PDB0V0 160 GBA0/IO19NDB0V0 GBA0/IO23NDB0V0 161 VCCFPGAIOB0 VCCFPGAIOB0 162 GND GND 163 VCC VCC 164 EMC_AB[25]/IO16PDB0V0 IO21PDB0V0 165 EMC_AB[24]/IO16NDB0V0 IO21NDB0V0 166 EMC_AB[23]/IO15PDB0V0 IO20PDB0V0 167 EMC_AB[22]/IO15NDB0V0 IO20NDB0V0 168 EMC_AB[21]/IO14PDB0V0 IO19PDB0V0 169 EMC_AB[20]/IO14NDB0V0 IO19NDB0V0 170 EMC_AB[19]/IO13PDB0V0 IO18PDB0V0 171 EMC_AB[18]/IO13NDB0V0 IO18NDB0V0 172 EMC_AB[17]/IO12PDB0V0 IO17PDB0V0 173 EMC_AB[16]/IO12NDB0V0 IO17NDB0V0 174 VCCFPGAIOB0 VCCFPGAIOB0 175 GND GND 176 VCC VCC 177 EMC_AB[15]/IO11PDB0V0 IO14PDB0V0 178 EMC_AB[14]/IO11NDB0V0 IO14NDB0V0 179 EMC_AB[13]/IO10PDB0V0 IO13PDB0V0 180 EMC_AB[12]/IO10NDB0V0 IO13NDB0V0 R ev i si o n 1 0 5- 37 Pin Descriptions PQ208 5- 38 Pin Number A2F200 A2F500 181 EMC_AB[11]/IO09PDB0V0 IO12PDB0V0 182 EMC_AB[10]/IO09NDB0V0 IO12NDB0V0 183 EMC_AB[9]/IO08PDB0V0 IO11PDB0V0 184 EMC_AB[8]/IO08NDB0V0 IO11NDB0V0 185 EMC_AB[7]/IO07PDB0V0 IO10PDB0V0 186 EMC_AB[6]/IO07NDB0V0 IO10NDB0V0 187 VCCFPGAIOB0 VCCFPGAIOB0 188 GND GND 189 VCC VCC 190 EMC_AB[5]/IO06PDB0V0 IO08PDB0V0 191 EMC_AB[4]/IO06NDB0V0 IO08NDB0V0 192 EMC_AB[3]/IO05PDB0V0 GAC1/IO07PDB0V0 193 EMC_AB[2]/IO05NDB0V0 GAC0/IO07NDB0V0 194 EMC_AB[1]/IO04PDB0V0 IO04PDB0V0 195 EMC_AB[0]/IO04NDB0V0 IO04NDB0V0 196 EMC_OEN1_N/IO03PDB0V0 IO03PDB0V0 197 EMC_OEN0_N/IO03NDB0V0 IO03NDB0V0 198 EMC_BYTEN[1]/GAC1/IO02PDB0V0 GAA1/IO02PDB0V0 199 EMC_BYTEN[0]/GAC0/IO02NDB0V0 GAA0/IO02NDB0V0 200 VCCFPGAIOB0 VCCFPGAIOB0 201 GND GND 202 VCC VCC 203 EMC_CS1_N/GAB1/IO01PDB0V0 IO01PDB0V0 204 EMC_CS0_N/GAB0/IO01NDB0V0 IO01NDB0V0 205 EMC_RW_N/GAA1/IO00PDB0V0 IO00PDB0V0 206 EMC_CLK/GAA0/IO00NDB0V0 IO00NDB0V0 207 VCCFPGAIOB0 VCCFPGAIOB0 208 GNDQ GNDQ R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) FG256 A1 Ball Pad Corner 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 A B C D E F G H J K L M N P R T Note For Package Manufacturing and Environmental information, visit the Resource Center at http://www.microsemi.com/soc/products/solutions/package/docs.aspx. R ev i si o n 1 0 5- 39 Pin Descriptions FG256 Pin No. A2F060 Function A2F200 Function A2F500 Function A1 GND GND GND A2 VCCFPGAIOB0 VCCFPGAIOB0 VCCFPGAIOB0 A3 EMC_AB[0]/IO04NDB0V0 EMC_AB[0]/IO04NDB0V0 EMC_AB[0]/IO06NDB0V0 A4 EMC_AB[1]/IO04PDB0V0 EMC_AB[1]/IO04PDB0V0 EMC_AB[1]/IO06PDB0V0 A5 GND GND GND A6 EMC_AB[3]/IO05PDB0V0 EMC_AB[3]/IO05PDB0V0 EMC_AB[3]/IO09PDB0V0 A7 EMC_AB[5]/IO06PDB0V0 EMC_AB[5]/IO06PDB0V0 EMC_AB[5]/IO10PDB0V0 A8 VCCFPGAIOB0 VCCFPGAIOB0 VCCFPGAIOB0 A9 GND GND GND A10 EMC_AB[14]/IO11NDB0V0 EMC_AB[14]/IO11NDB0V0 EMC_AB[14]/IO15NDB0V0 A11 EMC_AB[15]/IO11PDB0V0 EMC_AB[15]/IO11PDB0V0 EMC_AB[15]/IO15PDB0V0 A12 GND GND GND A13 EMC_AB[20]/IO14NDB0V0 EMC_AB[20]/IO14NDB0V0 EMC_AB[20]/IO21NDB0V0 A14 EMC_AB[24]/IO16NDB0V0 EMC_AB[24]/IO16NDB0V0 EMC_AB[24]/IO20NDB0V0 A15 VCCFPGAIOB0 VCCFPGAIOB0 VCCFPGAIOB0 A16 GND GND GND B1 EMC_DB[15]/IO45PDB5V0 EMC_DB[15]/GAA2/IO71PDB5V0 EMC_DB[15]/GAA2/IO88PDB5V0 B2 GND GND GND B3 EMC_BYTEN[1]/IO02PDB0V0 B4 EMC_OEN0_N/IO03NDB0V0 EMC_OEN0_N/IO03NDB0V0 EMC_OEN0_N/IO08NDB0V0 B5 EMC_OEN1_N/IO03PDB0V0 EMC_OEN1_N/IO03PDB0V0 EMC_OEN1_N/IO08PDB0V0 B6 EMC_AB[2]/IO05NDB0V0 EMC_AB[2]/IO05NDB0V0 EMC_AB[2]/IO09NDB0V0 B7 EMC_AB[4]/IO06NDB0V0 EMC_AB[4]/IO06NDB0V0 EMC_AB[4]/IO10NDB0V0 B8 EMC_AB[9]/IO08PDB0V0 EMC_AB[9]/IO08PDB0V0 EMC_AB[9]/IO13PDB0V0 B9 EMC_AB[12]/IO10NDB0V0 EMC_AB[12]/IO10NDB0V0 EMC_AB[12]/IO14NDB0V0 B10 EMC_AB[13]/IO10PDB0V0 EMC_AB[13]/IO10PDB0V0 EMC_AB[13]/IO14PDB0V0 B11 EMC_AB[16]/IO12NDB0V0 EMC_AB[16]/IO12NDB0V0 EMC_AB[16]/IO17NDB0V0 B12 EMC_AB[18]/IO13NDB0V0 EMC_AB[18]/IO13NDB0V0 EMC_AB[18]/IO18NDB0V0 B13 EMC_AB[21]/IO14PDB0V0 EMC_AB[21]/IO14PDB0V0 EMC_AB[21]/IO21PDB0V0 B14 EMC_AB[25]/IO16PDB0V0 EMC_AB[25]/IO16PDB0V0 EMC_AB[25]/IO20PDB0V0 B15 GND GND GND B16 GNDQ GNDQ GNDQ C1 EMC_DB[14]/IO45NDB5V0 EMC_DB[14]/GAB2/IO71NDB5V0 EMC_DB[14]/GAB2/IO88NDB5V0 C2 VCCPLL0 VCCPLL VCCPLL0 EMC_BYTEN[1]/GAC1/IO02PDB0V0 EMC_BYTEN[1]/GAC1/IO07PDB0V0 Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the bank assignment can be different for an I/O, or the function might be available only on a larger density device. 5- 40 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) FG256 Pin No. A2F060 Function C3 EMC_BYTEN[0]/IO02NDB0V0 C4 VCCFPGAIOB0 VCCFPGAIOB0 VCCFPGAIOB0 C5 EMC_CS0_N/IO01NDB0V0 EMC_CS0_N/GAB0/IO01NDB0V0 EMC_CS0_N/GAB0/IO05NDB0V0 C6 EMC_CS1_N/IO01PDB0V0 EMC_CS1_N/GAB1/IO01PDB0V0 EMC_CS1_N/GAB1/IO05PDB0V0 C7 GND GND GND C8 EMC_AB[8]/IO08NDB0V0 EMC_AB[8]/IO08NDB0V0 EMC_AB[8]/IO13NDB0V0 C9 EMC_AB[11]/IO09PDB0V0 EMC_AB[11]/IO09PDB0V0 EMC_AB[11]/IO11PDB0V0 C10 VCCFPGAIOB0 VCCFPGAIOB0 VCCFPGAIOB0 C11 EMC_AB[17]/IO12PDB0V0 EMC_AB[17]/IO12PDB0V0 EMC_AB[17]/IO17PDB0V0 C12 EMC_AB[19]/IO13PDB0V0 EMC_AB[19]/IO13PDB0V0 EMC_AB[19]/IO18PDB0V0 C13 GND GND GND C14 GCC0/IO18NPB0V0 GBA2/IO20PPB1V0 GBA2/IO27PPB1V0 C15 GCB0/IO19NDB0V0 GCA2/IO23PDB1V0 GCA2/IO28PDB1V0 C16 GCB1/IO19PDB0V0 IO23NDB1V0 IO28NDB1V0 D1 VCCFPGAIOB5 VCCFPGAIOB5 VCCFPGAIOB5 D2 VCOMPLA0 VCOMPLA VCOMPLA0 D3 GND GND GND D4 GNDQ GNDQ GNDQ D5 EMC_CLK/IO00NDB0V0 EMC_CLK/GAA0/IO00NDB0V0 EMC_CLK/GAA0/IO02NDB0V0 D6 EMC_RW_N/IO00PDB0V0 EMC_RW_N/GAA1/IO00PDB0V0 EMC_RW_N/GAA1/IO02PDB0V0 D7 EMC_AB[6]/IO07NDB0V0 EMC_AB[6]/IO07NDB0V0 EMC_AB[6]/IO12NDB0V0 D8 EMC_AB[7]/IO07PDB0V0 EMC_AB[7]/IO07PDB0V0 EMC_AB[7]/IO12PDB0V0 D9 EMC_AB[10]/IO09NDB0V0 EMC_AB[10]/IO09NDB0V0 EMC_AB[10]/IO11NDB0V0 D10 EMC_AB[22]/IO15NDB0V0 EMC_AB[22]/IO15NDB0V0 EMC_AB[22]/IO19NDB0V0 D11 EMC_AB[23]/IO15PDB0V0 EMC_AB[23]/IO15PDB0V0 EMC_AB[23]/IO19PDB0V0 D12 GNDQ GNDQ GNDQ D13 GCC1/IO18PPB0V0 GBB2/IO20NPB1V0 GBB2/IO27NPB1V0 D14 GCA0/IO20NDB0V0 GCB2/IO24PDB1V0 GCB2/IO33PDB1V0 D15 GCA1/IO20PDB0V0 IO24NDB1V0 IO33NDB1V0 D16 VCCFPGAIOB1 VCCFPGAIOB1 VCCFPGAIOB1 E1 EMC_DB[13]/IO44PDB5V0 EMC_DB[13]/GAC2/IO70PDB5V0 EMC_DB[13]/GAC2/IO87PDB5V0 E2 EMC_DB[12]/IO44NDB5V0 EMC_DB[12]/IO70NDB5V0 EMC_DB[12]/IO87NDB5V0 E3 GFA2/IO42PDB5V0 GFA2/IO68PDB5V0 GFA2/IO85PDB5V0 E4 EMC_DB[10]/IO43NPB5V0 EMC_DB[10]/IO69NPB5V0 EMC_DB[10]/IO86NPB5V0 A2F200 Function A2F500 Function EMC_BYTEN[0]/GAC0/IO02NDB0V0 EMC_BYTEN[0]/GAC0/IO07NDB0V0 Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the bank assignment can be different for an I/O, or the function might be available only on a larger density device. R ev i si o n 1 0 5- 41 Pin Descriptions FG256 Pin No. A2F060 Function A2F200 Function A2F500 Function E5 GNDQ GNDQ GNDQ E6 GND GND GND E7 VCCFPGAIOB0 VCCFPGAIOB0 VCCFPGAIOB0 E8 GND GND GND E9 VCCFPGAIOB0 VCCFPGAIOB0 VCCFPGAIOB0 E10 GND GND GND E11 VCCFPGAIOB0 VCCFPGAIOB0 VCCFPGAIOB0 E12 GCB2/IO22PDB1V0 GCA1/IO28PDB1V0 GCA1/IO36PDB1V0 E13 VCCFPGAIOB1 VCCFPGAIOB1 VCCFPGAIOB1 E14 GCA2/IO21PDB1V0 GCB1/IO27PDB1V0 GCB1/IO34PDB1V0 E15 GCC2/IO23PDB1V0 GDC1/IO29PDB1V0 GDC1/IO38PDB1V0 E16 IO23NDB1V0 GDC0/IO29NDB1V0 GDC0/IO38NDB1V0 F1 EMC_DB[9]/IO40PDB5V0 EMC_DB[9]/GEC1/IO63PDB5V0 EMC_DB[9]/GEC1/IO80PDB5V0 F2 GND GND GND F3 GFB2/IO42NDB5V0 GFB2/IO68NDB5V0 GFB2/IO85NDB5V0 F4 VCCFPGAIOB5 VCCFPGAIOB5 VCCFPGAIOB5 F5 EMC_DB[11]/IO43PPB5V0 EMC_DB[11]/IO69PPB5V0 EMC_DB[11]/IO86PPB5V0 F6 VCCFPGAIOB5 VCCFPGAIOB5 VCCFPGAIOB5 F7 GND GND GND F8 VCC VCC VCC F9 GND GND GND F10 VCC VCC VCC F11 GND GND GND F12 IO22NDB1V0 GCA0/IO28NDB1V0 GCA0/IO36NDB1V0 F13 NC GNDQ GNDQ F14 IO21NDB1V0 GCB0/IO27NDB1V0 GCB0/IO34NDB1V0 F15 GND GND GND F16 VCCENVM VCCENVM VCCENVM G1 EMC_DB[8]/IO40NDB5V0 EMC_DB[8]/GEC0/IO63NDB5V0 EMC_DB[8]/GEC0/IO80NDB5V0 G2 EMC_DB[7]/IO39PDB5V0 EMC_DB[7]/GEB1/IO62PDB5V0 EMC_DB[7]/GEB1/IO79PDB5V0 G3 EMC_DB[6]/IO39NDB5V0 EMC_DB[6]/GEB0/IO62NDB5V0 EMC_DB[6]/GEB0/IO79NDB5V0 G4 GFC2/IO41PDB5V0 GFC2/IO67PDB5V0 GFC2/IO84PDB5V0 G5 IO41NDB5V0 IO67NDB5V0 IO84NDB5V0 G6 GND GND GND Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the bank assignment can be different for an I/O, or the function might be available only on a larger density device. 5- 42 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) FG256 Pin No. A2F060 Function A2F200 Function A2F500 Function G7 VCC VCC VCC G8 GND GND GND G9 VCC VCC VCC G10 GND GND GND G11 VCCFPGAIOB1 VCCFPGAIOB1 VCCFPGAIOB1 G12 VPP VPP VPP G13 TRSTB TRSTB TRSTB G14 TMS TMS TMS G15 TCK TCK TCK G16 GNDENVM GNDENVM GNDENVM H1 GND GND GND H2 EMC_DB[5]/IO38PPB5V0 EMC_DB[5]/GEA1/IO61PPB5V0 EMC_DB[5]/GEA1/IO78PPB5V0 H3 VCCFPGAIOB5 VCCFPGAIOB5 VCCFPGAIOB5 H4 EMC_DB[1]/IO36PDB5V0 EMC_DB[1]/GEB2/IO59PDB5V0 EMC_DB[1]/GEB2/IO76PDB5V0 H5 EMC_DB[0]/IO36NDB5V0 EMC_DB[0]/GEA2/IO59NDB5V0 EMC_DB[0]/GEA2/IO76NDB5V0 H6 VCCFPGAIOB5 VCCFPGAIOB5 VCCFPGAIOB5 H7 GND GND GND H8 VCC VCC VCC H9 GND GND GND H10 VCC VCC VCC H11 GND GND GND H12 VJTAG VJTAG VJTAG H13 TDO TDO TDO H14 TDI TDI TDI H15 JTAGSEL JTAGSEL JTAGSEL H16 GND GND GND J1 EMC_DB[4]/IO38NPB5V0 EMC_DB[4]/GEA0/IO61NPB5V0 EMC_DB[4]/GEA0/IO78NPB5V0 J2 EMC_DB[3]/IO37PDB5V0 EMC_DB[3]/GEC2/IO60PDB5V0 EMC_DB[3]/GEC2/IO77PDB5V0 J3 EMC_DB[2]/IO37NDB5V0 EMC_DB[2]/IO60NDB5V0 EMC_DB[2]/IO77NDB5V0 J4 GNDRCOSC GNDRCOSC GNDRCOSC J5 NC GNDQ GNDQ J6 GND GND GND J7 VCC VCC VCC J8 GND GND GND Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the bank assignment can be different for an I/O, or the function might be available only on a larger density device. R ev i si o n 1 0 5- 43 Pin Descriptions FG256 Pin No. A2F060 Function A2F200 Function A2F500 Function J9 VCC VCC VCC J10 GND GND GND J11 VCCMSSIOB2 VCCMSSIOB2 VCCMSSIOB2 J12 I2C_0_SCL/GPIO_23 I2C_0_SCL/GPIO_23 I2C_0_SCL/GPIO_23 J13 I2C_0_SDA/GPIO_22 I2C_0_SDA/GPIO_22 I2C_0_SDA/GPIO_22 J14 I2C_1_SCL/GPIO_31 I2C_1_SCL/GPIO_31 I2C_1_SCL/GPIO_31 J15 VCCMSSIOB2 VCCMSSIOB2 VCCMSSIOB2 J16 I2C_1_SDA/GPIO_30 I2C_1_SDA/GPIO_30 I2C_1_SDA/GPIO_30 K1 GPIO_1/IO32RSB4V0 MAC_MDIO/IO49RSB4V0 MAC_MDIO/IO58RSB4V0 K2 GPIO_0/IO33RSB4V0 MAC_MDC/IO48RSB4V0 MAC_MDC/IO57RSB4V0 K3 VCCMSSIOB4 VCCMSSIOB4 VCCMSSIOB4 K4 MSS_RESET_N MSS_RESET_N MSS_RESET_N K5 VCCRCOSC VCCRCOSC VCCRCOSC K6 VCCMSSIOB4 VCCMSSIOB4 VCCMSSIOB4 K7 GND GND GND K8 VCC VCC VCC K9 GND GND GND K10 VCC VCC VCC K11 GND GND GND K12 UART_0_RXD/GPIO_21 UART_0_RXD/GPIO_21 UART_0_RXD/GPIO_21 K13 GND GND GND K14 UART_1_TXD/GPIO_28 UART_1_TXD/GPIO_28 UART_1_TXD/GPIO_28 K15 UART_1_RXD/GPIO_29 UART_1_RXD/GPIO_29 UART_1_RXD/GPIO_29 K16 UART_0_TXD/GPIO_20 UART_0_TXD/GPIO_20 UART_0_TXD/GPIO_20 L1 GND GND GND L2 GPIO_2/IO31RSB4V0 MAC_TXEN/IO52RSB4V0 MAC_TXEN/IO61RSB4V0 L3 GPIO_3/IO30RSB4V0 MAC_CRSDV/IO51RSB4V0 MAC_CRSDV/IO60RSB4V0 L4 GPIO_4/IO29RSB4V0 MAC_RXER/IO50RSB4V0 MAC_RXER/IO59RSB4V0 L5 GPIO_9/IO24RSB4V0 MAC_CLK MAC_CLK L6 GND GND GND L7 VCC VCC VCC L8 GND GND GND L9 VCC VCC VCC L10 GND GND GND Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the bank assignment can be different for an I/O, or the function might be available only on a larger density device. 5- 44 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) FG256 Pin No. A2F060 Function A2F200 Function A2F500 Function L11 VCCMSSIOB2 VCCMSSIOB2 VCCMSSIOB2 L12 SPI_1_DO/GPIO_24 SPI_1_DO/GPIO_24 SPI_1_DO/GPIO_24 L13 SPI_1_SS/GPIO_27 SPI_1_SS/GPIO_27 SPI_1_SS/GPIO_27 L14 SPI_1_CLK/GPIO_26 SPI_1_CLK/GPIO_26 SPI_1_CLK/GPIO_26 L15 SPI_1_DI/GPIO_25 SPI_1_DI/GPIO_25 SPI_1_DI/GPIO_25 L16 GND GND GND M1 GPIO_5/IO28RSB4V0 MAC_TXD[0]/IO56RSB4V0 MAC_TXD[0]/IO65RSB4V0 M2 GPIO_6/IO27RSB4V0 MAC_TXD[1]/IO55RSB4V0 MAC_TXD[1]/IO64RSB4V0 M3 GPIO_7/IO26RSB4V0 MAC_RXD[0]/IO54RSB4V0 MAC_RXD[0]/IO63RSB4V0 M4 GND GND GND M5 NC ADC3 ADC3 M6 NC GND15ADC0 GND15ADC0 M7 GND33ADC0 GND33ADC1 GND33ADC1 M8 GND33ADC0 GND33ADC1 GND33ADC1 M9 ADC7 ADC4 ADC4 M10 GNDTM0 GNDTM1 GNDTM1 M11 ADC6 TM2 TM2 M12 ADC5 CM2 CM2 M13 SPI_0_SS/GPIO_19 SPI_0_SS/GPIO_19 SPI_0_SS/GPIO_19 M14 VCCMSSIOB2 VCCMSSIOB2 VCCMSSIOB2 M15 SPI_0_CLK/GPIO_18 SPI_0_CLK/GPIO_18 SPI_0_CLK/GPIO_18 M16 SPI_0_DI/GPIO_17 SPI_0_DI/GPIO_17 SPI_0_DI/GPIO_17 N1 GPIO_8/IO25RSB4V0 MAC_RXD[1]/IO53RSB4V0 MAC_RXD[1]/IO62RSB4V0 N2 VCCMSSIOB4 VCCMSSIOB4 VCCMSSIOB4 N3 VCC15A VCC15A VCC15A N4 VCC33AP VCC33AP VCC33AP N5 NC ABPS3 ABPS3 N6 ADC4 TM1 TM1 N7 NC GND33ADC0 GND33ADC0 N8 VCC33ADC0 VCC33ADC1 VCC33ADC1 N9 ADC8 ADC5 ADC5 N10 CM0 CM3 CM3 N11 GNDAQ GNDAQ GNDAQ N12 VAREFOUT VAREFOUT VAREFOUT Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the bank assignment can be different for an I/O, or the function might be available only on a larger density device. R ev i si o n 1 0 5- 45 Pin Descriptions FG256 Pin No. A2F060 Function A2F200 Function A2F500 Function N13 NC GNDSDD1 GNDSDD1 N14 NC VCC33SDD1 VCC33SDD1 N15 GND GND GND N16 SPI_0_DO/GPIO_16 SPI_0_DO/GPIO_16 SPI_0_DO/GPIO_16 P1 GNDSDD0 GNDSDD0 GNDSDD0 P2 VCC33SDD0 VCC33SDD0 VCC33SDD0 P3 VCC33N VCC33N VCC33N P4 GNDA GNDA GNDA P5 GNDAQ GNDAQ GNDAQ P6 NC CM1 CM1 P7 NC ADC2 ADC2 P8 NC VCC15ADC0 VCC15ADC0 P9 ADC9 ADC6 ADC6 P10 TM0 TM3 TM3 P11 GNDA GNDA GNDA P12 VCCMAINXTAL VCCMAINXTAL VCCMAINXTAL P13 GNDLPXTAL GNDLPXTAL GNDLPXTAL P14 VDDBAT VDDBAT VDDBAT P15 PTEM PTEM PTEM P16 PTBASE PTBASE PTBASE R1 PCAP PCAP PCAP R2 SDD0 SDD0 SDD0 R3 ADC0 ABPS0 ABPS0 R4 ADC3 TM0 TM0 R5 NC ABPS2 ABPS2 R6 NC ADC1 ADC1 R7 NC VCC33ADC0 VCC33ADC0 R8 VCC15ADC0 VCC15ADC1 VCC15ADC1 R9 ADC10 ADC7 ADC7 R10 ABPS1 ABPS7 ABPS7 R11 NC ABPS4 ABPS4 R12 MAINXIN MAINXIN MAINXIN R13 MAINXOUT MAINXOUT MAINXOUT R14 LPXIN LPXIN LPXIN Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the bank assignment can be different for an I/O, or the function might be available only on a larger density device. 5- 46 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) FG256 Pin No. A2F060 Function A2F200 Function A2F500 Function R15 LPXOUT LPXOUT LPXOUT R16 VCC33A VCC33A VCC33A T1 NCAP NCAP NCAP T2 ADC1 ABPS1 ABPS1 T3 ADC2 CM0 CM0 T4 NC GNDTM0 GNDTM0 T5 NC ADC0 ADC0 T6 NC VAREF0 VAREF0 T7 NC GND33ADC0 GND33ADC0 T8 GND15ADC0 GND15ADC1 GND15ADC1 T9 VAREF0 VAREF1 VAREF1 T10 ABPS0 ABPS6 ABPS6 T11 NC ABPS5 ABPS5 T12 NC SDD1 SDD1 T13 GNDVAREF GNDVAREF GNDVAREF T14 GNDMAINXTAL GNDMAINXTAL GNDMAINXTAL T15 VCCLPXTAL VCCLPXTAL VCCLPXTAL T16 PU_N PU_N PU_N Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the bank assignment can be different for an I/O, or the function might be available only on a larger density device. R ev i si o n 1 0 5- 47 Pin Descriptions FG484 A1 Ball Pad Corner 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 A B C D E F G H J K L M N P R T U V W Y AA AB Note For Package Manufacturing and Environmental information, visit the Resource Center at http://www.microsemi.com/soc/products/solutions/package/docs.aspx. 5- 48 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) FG484 Pin Number A2F200 Function A2F500 Function A1 GND GND A2 NC NC A3 NC NC A4 GND GND A5 EMC_CS0_N/GAB0/IO01NDB0V0 EMC_CS0_N/GAB0/IO05NDB0V0 A6 EMC_CS1_N/GAB1/IO01PDB0V0 EMC_CS1_N/GAB1/IO05PDB0V0 A7 GND GND A8 EMC_AB[0]/IO04NDB0V0 EMC_AB[0]/IO06NDB0V0 A9 EMC_AB[1]/IO04PDB0V0 EMC_AB[1]/IO06PDB0V0 A10 GND GND A11 NC NC A12 EMC_AB[7]/IO07PDB0V0 EMC_AB[7]/IO12PDB0V0 A13 GND GND A14 EMC_AB[12]/IO10NDB0V0 EMC_AB[12]/IO14NDB0V0 A15 EMC_AB[13]/IO10PDB0V0 EMC_AB[13]/IO14PDB0V0 A16 GND GND A17 NC IO16NDB0V0 A18 NC IO16PDB0V0 A19 GND GND A20 NC NC A21 NC NC A22 GND GND AA1 GPIO_4/IO43RSB4V0 GPIO_4/IO52RSB4V0 AA2 GPIO_12/IO37RSB4V0 GPIO_12/IO46RSB4V0 AA3 MAC_MDC/IO48RSB4V0 MAC_MDC/IO57RSB4V0 AA4 MAC_RXER/IO50RSB4V0 MAC_RXER/IO59RSB4V0 AA5 MAC_TXD[0]/IO56RSB4V0 MAC_TXD[0]/IO65RSB4V0 AA6 ABPS0 ABPS0 AA7 TM1 TM1 AA8 ADC1 ADC1 AA9 GND15ADC1 GND15ADC1 AA10 GND33ADC1 GND33ADC1 AA11 CM3 CM3 AA12 GNDTM1 GNDTM1 AA13 NC ADC10 AA14 NC ADC9 Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the bank assignment can be different for an I/O, or the function might be available only on a larger density device. R ev i si o n 1 0 5- 49 Pin Descriptions FG484 Pin Number A2F200 Function A2F500 Function AA15 NC GND15ADC2 AA16 MAINXIN MAINXIN AA17 MAINXOUT MAINXOUT AA18 LPXIN LPXIN AA19 LPXOUT LPXOUT AA20 NC NC AA21 NC NC AA22 SPI_1_CLK/GPIO_26 SPI_1_CLK/GPIO_26 AB1 GND GND AB2 GPIO_13/IO36RSB4V0 GPIO_13/IO45RSB4V0 AB3 GPIO_14/IO35RSB4V0 GPIO_14/IO44RSB4V0 AB4 GND GND AB5 PCAP PCAP AB6 NCAP NCAP AB7 ABPS3 ABPS3 AB8 ADC3 ADC3 AB9 GND15ADC0 GND15ADC0 AB10 VCC33ADC1 VCC33ADC1 AB11 VAREF1 VAREF1 AB12 TM2 TM2 AB13 CM2 CM2 AB14 ABPS4 ABPS4 AB15 GNDAQ GNDAQ AB16 GNDMAINXTAL GNDMAINXTAL AB17 GNDLPXTAL GNDLPXTAL AB18 VCCLPXTAL VCCLPXTAL AB19 VDDBAT VDDBAT AB20 PTBASE PTBASE AB21 NC NC AB22 GND GND B1 EMC_DB[15]/GAA2/IO71PDB5V0 EMC_DB[15]/GAA2/IO88PDB5V0 B2 GND GND B3 NC NC B4 NC NC B5 VCCFPGAIOB0 VCCFPGAIOB0 B6 EMC_RW_N/GAA1/IO00PDB0V0 EMC_RW_N/GAA1/IO02PDB0V0 Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the bank assignment can be different for an I/O, or the function might be available only on a larger density device. 5- 50 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) FG484 Pin Number A2F200 Function A2F500 Function B7 NC IO04PPB0V0 B8 VCCFPGAIOB0 VCCFPGAIOB0 B9 EMC_BYTEN[0]/GAC0/IO02NDB0V0 EMC_BYTEN[0]/GAC0/IO07NDB0V0 B10 EMC_AB[2]/IO05NDB0V0 EMC_AB[2]/IO09NDB0V0 B11 EMC_AB[3]/IO05PDB0V0 EMC_AB[3]/IO09PDB0V0 B12 EMC_AB[6]/IO07NDB0V0 EMC_AB[6]/IO12NDB0V0 B13 EMC_AB[14]/IO11NDB0V0 EMC_AB[14]/IO15NDB0V0 B14 EMC_AB[15]/IO11PDB0V0 EMC_AB[15]/IO15PDB0V0 B15 VCCFPGAIOB0 VCCFPGAIOB0 B16 EMC_AB[18]/IO13NDB0V0 EMC_AB[18]/IO18NDB0V0 B17 EMC_AB[19]/IO13PDB0V0 EMC_AB[19]/IO18PDB0V0 B18 VCCFPGAIOB0 VCCFPGAIOB0 B19 GBB0/IO18NDB0V0 GBB0/IO24NDB0V0 B20 GBB1/IO18PDB0V0 GBB1/IO24PDB0V0 B21 GND GND B22 GBA2/IO20PDB1V0 GBA2/IO27PDB1V0 C1 EMC_DB[14]/GAB2/IO71NDB5V0 EMC_DB[14]/GAB2/IO88NDB5V0 C2 NC NC C3 NC NC C4 NC IO01NDB0V0 C5 NC IO01PDB0V0 C6 EMC_CLK/GAA0/IO00NDB0V0 EMC_CLK/GAA0/IO02NDB0V0 C7 NC IO03PPB0V0 C8 NC IO04NPB0V0 C9 EMC_BYTEN[1]/GAC1/IO02PDB0V0 EMC_BYTEN[1]/GAC1/IO07PDB0V0 C10 EMC_OEN1_N/IO03PDB0V0 EMC_OEN1_N/IO08PDB0V0 C11 GND GND C12 VCCFPGAIOB0 VCCFPGAIOB0 C13 EMC_AB[8]/IO08NDB0V0 EMC_AB[8]/IO13NDB0V0 C14 EMC_AB[16]/IO12NDB0V0 EMC_AB[16]/IO17NDB0V0 C15 EMC_AB[17]/IO12PDB0V0 EMC_AB[17]/IO17PDB0V0 C16 EMC_AB[24]/IO16NDB0V0 EMC_AB[24]/IO20NDB0V0 C17 EMC_AB[22]/IO15NDB0V0 EMC_AB[22]/IO19NDB0V0 C18 EMC_AB[23]/IO15PDB0V0 EMC_AB[23]/IO19PDB0V0 C19 GBA0/IO19NPB0V0 GBA0/IO23NPB0V0 C20 NC NC Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the bank assignment can be different for an I/O, or the function might be available only on a larger density device. R ev i si o n 1 0 5- 51 Pin Descriptions FG484 Pin Number A2F200 Function A2F500 Function C21 GBC2/IO21PDB1V0 GBC2/IO30PDB1V0 C22 GBB2/IO20NDB1V0 GBB2/IO27NDB1V0 D1 GND GND D2 EMC_DB[12]/IO70NDB5V0 EMC_DB[12]/IO87NDB5V0 D3 EMC_DB[13]/GAC2/IO70PDB5V0 EMC_DB[13]/GAC2/IO87PDB5V0 D4 NC NC D5 NC NC D6 GND GND D7 NC IO00NPB0V0 D8 NC IO03NPB0V0 D9 GND GND D10 EMC_OEN0_N/IO03NDB0V0 EMC_OEN0_N/IO08NDB0V0 D11 EMC_AB[10]/IO09NDB0V0 EMC_AB[10]/IO11NDB0V0 D12 EMC_AB[11]/IO09PDB0V0 EMC_AB[11]/IO11PDB0V0 D13 EMC_AB[9]/IO08PDB0V0 EMC_AB[9]/IO13PDB0V0 D14 GND GND D15 GBC1/IO17PPB0V0 GBC1/IO22PPB0V0 D16 EMC_AB[25]/IO16PDB0V0 EMC_AB[25]/IO20PDB0V0 D17 GND GND D18 GBA1/IO19PPB0V0 GBA1/IO23PPB0V0 D19 NC NC D20 NC NC D21 IO21NDB1V0 IO30NDB1V0 D22 GND GND E1 GFC2/IO67PPB5V0 GFC2/IO84PPB5V0 E2 VCCFPGAIOB5 VCCFPGAIOB5 E3 GFA2/IO68PDB5V0 GFA2/IO85PDB5V0 E4 GND GND E5 NC NC E6 GNDQ GNDQ E7 VCCFPGAIOB0 VCCFPGAIOB0 E8 NC IO00PPB0V0 E9 NC NC E10 VCCFPGAIOB0 VCCFPGAIOB0 E11 EMC_AB[4]/IO06NDB0V0 EMC_AB[4]/IO10NDB0V0 E12 EMC_AB[5]/IO06PDB0V0 EMC_AB[5]/IO10PDB0V0 Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the bank assignment can be different for an I/O, or the function might be available only on a larger density device. 5- 52 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) FG484 Pin Number A2F200 Function A2F500 Function E13 VCCFPGAIOB0 VCCFPGAIOB0 E14 GBC0/IO17NPB0V0 GBC0/IO22NPB0V0 E15 NC NC E16 VCCFPGAIOB0 VCCFPGAIOB0 E17 NC VCOMPLA1 E18 NC IO25NPB1V0 E19 GND GND E20 NC NC E21 VCCFPGAIOB1 VCCFPGAIOB1 E22 IO22NDB1V0 IO32NDB1V0 F1 GFB1/IO65PPB5V0 GFB1/IO82PPB5V0 F2 IO67NPB5V0 IO84NPB5V0 F3 GFB2/IO68NDB5V0 GFB2/IO85NDB5V0 F4 EMC_DB[10]/IO69NPB5V0 EMC_DB[10]/IO86NPB5V0 F5 VCCFPGAIOB5 VCCFPGAIOB5 F6 VCCPLL VCCPLL0 F7 VCOMPLA VCOMPLA0 F8 NC NC F9 NC NC F10 NC NC F11 NC NC F12 NC NC F13 EMC_AB[20]/IO14NDB0V0 EMC_AB[20]/IO21NDB0V0 F14 EMC_AB[21]/IO14PDB0V0 EMC_AB[21]/IO21PDB0V0 F15 GNDQ GNDQ F16 NC VCCPLL1 F17 NC IO25PPB1V0 F18 VCCFPGAIOB1 VCCFPGAIOB1 F19 IO23NDB1V0 IO28NDB1V0 F20 NC IO31PDB1V0 F21 NC IO31NDB1V0 F22 IO22PDB1V0 IO32PDB1V0 G1 GND GND G2 GFB0/IO65NPB5V0 GFB0/IO82NPB5V0 G3 EMC_DB[9]/GEC1/IO63PDB5V0 EMC_DB[9]/GEC1/IO80PDB5V0 G4 GFC1/IO66PPB5V0 GFC1/IO83PPB5V0 Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the bank assignment can be different for an I/O, or the function might be available only on a larger density device. R ev i si o n 1 0 5- 53 Pin Descriptions FG484 Pin Number A2F200 Function A2F500 Function G5 EMC_DB[11]/IO69PPB5V0 EMC_DB[11]/IO86PPB5V0 G6 GNDQ GNDQ G7 NC NC G8 GND GND G9 VCCFPGAIOB0 VCCFPGAIOB0 G10 GND GND G11 VCCFPGAIOB0 VCCFPGAIOB0 G12 GND GND G13 VCCFPGAIOB0 VCCFPGAIOB0 G14 GND GND G15 VCCFPGAIOB0 VCCFPGAIOB0 G16 GNDQ GNDQ G17 NC IO26PDB1V0 G18 NC IO26NDB1V0 G19 GCA2/IO23PDB1V0 GCA2/IO28PDB1V0 G20 IO24NDB1V0 IO33NDB1V0 G21 GCB2/IO24PDB1V0 GCB2/IO33PDB1V0 G22 GND GND H1 EMC_DB[7]/GEB1/IO62PDB5V0 EMC_DB[7]/GEB1/IO79PDB5V0 H2 VCCFPGAIOB5 VCCFPGAIOB5 H3 EMC_DB[8]/GEC0/IO63NDB5V0 EMC_DB[8]/GEC0/IO80NDB5V0 H4 GND GND H5 GFC0/IO66NPB5V0 GFC0/IO83NPB5V0 H6 GFA1/IO64PDB5V0 GFA1/IO81PDB5V0 H7 GND GND H8 VCC VCC H9 GND GND H10 VCC VCC H11 GND GND H12 VCC VCC H13 GND GND H14 VCC VCC H15 GND GND H16 VCCFPGAIOB1 VCCFPGAIOB1 H17 IO25NDB1V0 IO29NDB1V0 H18 GCC2/IO25PDB1V0 GCC2/IO29PDB1V0 Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the bank assignment can be different for an I/O, or the function might be available only on a larger density device. 5- 54 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) FG484 Pin Number A2F200 Function A2F500 Function H19 GND GND H20 GCC0/IO26NPB1V0 GCC0/IO35NPB1V0 H21 VCCFPGAIOB1 VCCFPGAIOB1 H22 GCB0/IO27NDB1V0 GCB0/IO34NDB1V0 J1 EMC_DB[6]/GEB0/IO62NDB5V0 EMC_DB[6]/GEB0/IO79NDB5V0 J2 EMC_DB[5]/GEA1/IO61PDB5V0 EMC_DB[5]/GEA1/IO78PDB5V0 J3 EMC_DB[4]/GEA0/IO61NDB5V0 EMC_DB[4]/GEA0/IO78NDB5V0 J4 EMC_DB[3]/GEC2/IO60PPB5V0 EMC_DB[3]/GEC2/IO77PPB5V0 J5 VCCFPGAIOB5 VCCFPGAIOB5 J6 GFA0/IO64NDB5V0 GFA0/IO81NDB5V0 J7 VCCFPGAIOB5 VCCFPGAIOB5 J8 GND GND J9 VCC VCC J10 GND GND J11 VCC VCC J12 GND GND J13 VCC VCC J14 GND GND J15 VCC VCC J16 GND GND J17 NC IO37PDB1V0 J18 VCCFPGAIOB1 VCCFPGAIOB1 J19 GCA0/IO28NDB1V0 GCA0/IO36NDB1V0 J20 GCA1/IO28PDB1V0 GCA1/IO36PDB1V0 J21 GCC1/IO26PPB1V0 GCC1/IO35PPB1V0 J22 GCB1/IO27PDB1V0 GCB1/IO34PDB1V0 K1 GND GND K2 EMC_DB[0]/GEA2/IO59NDB5V0 EMC_DB[0]/GEA2/IO76NDB5V0 K3 EMC_DB[1]/GEB2/IO59PDB5V0 EMC_DB[1]/GEB2/IO76PDB5V0 K4 NC IO74PPB5V0 K5 EMC_DB[2]/IO60NPB5V0 EMC_DB[2]/IO77NPB5V0 K6 NC IO75PDB5V0 K7 GND GND K8 VCC VCC K9 GND GND K10 VCC VCC Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the bank assignment can be different for an I/O, or the function might be available only on a larger density device. R ev i si o n 1 0 5- 55 Pin Descriptions FG484 Pin Number A2F200 Function A2F500 Function K11 GND GND K12 VCC VCC K13 GND GND K14 VCC VCC K15 GND GND K16 VCCFPGAIOB1 VCCFPGAIOB1 K17 NC IO37NDB1V0 K18 GDA1/IO31PDB1V0 GDA1/IO40PDB1V0 K19 GDA0/IO31NDB1V0 GDA0/IO40NDB1V0 K20 GDC1/IO29PDB1V0 GDC1/IO38PDB1V0 K21 GDC0/IO29NDB1V0 GDC0/IO38NDB1V0 K22 GND GND L1 NC IO73PDB5V0 L2 NC IO73NDB5V0 L3 NC IO72PPB5V0 L4 GND GND L5 NC IO74NPB5V0 L6 NC IO75NDB5V0 L7 VCCFPGAIOB5 VCCFPGAIOB5 L8 GND GND L9 VCC VCC L10 GND GND L11 VCC VCC L12 GND GND L13 VCC VCC L14 GND GND L15 VCC VCC L16 GND GND L17 GNDQ GNDQ L18 GDA2/IO33NDB1V0 GDA2/IO42NDB1V0 L19 VCCFPGAIOB1 VCCFPGAIOB1 L20 GDB1/IO30PDB1V0 GDB1/IO39PDB1V0 L21 GDB0/IO30NDB1V0 GDB0/IO39NDB1V0 L22 GDC2/IO32PDB1V0 GDC2/IO41PDB1V0 M1 NC IO71PDB5V0 M2 NC IO71NDB5V0 Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the bank assignment can be different for an I/O, or the function might be available only on a larger density device. 5- 56 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) FG484 Pin Number A2F200 Function A2F500 Function M3 VCCFPGAIOB5 VCCFPGAIOB5 M4 NC IO72NPB5V0 M5 GNDQ GNDQ M6 NC IO68PDB5V0 M7 GND GND M8 VCC VCC M9 GND GND M10 VCC VCC M11 GND GND M12 VCC VCC M13 GND GND M14 VCC VCC M15 GND GND M16 VCCFPGAIOB1 VCCFPGAIOB1 M17 NC NC M18 GDB2/IO33PDB1V0 GDB2/IO42PDB1V0 M19 VJTAG VJTAG M20 GND GND M21 VPP VPP M22 IO32NDB1V0 IO41NDB1V0 N1 GND GND N2 NC IO70PDB5V0 N3 NC IO70NDB5V0 N4 VCCRCOSC VCCRCOSC N5 VCCFPGAIOB5 VCCFPGAIOB5 N6 NC IO68NDB5V0 N7 VCCFPGAIOB5 VCCFPGAIOB5 N8 GND GND N9 VCC VCC N10 GND GND N11 VCC VCC N12 GND GND N13 VCC VCC N14 GND GND N15 VCC VCC N16 NC GND Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the bank assignment can be different for an I/O, or the function might be available only on a larger density device. R ev i si o n 1 0 5- 57 Pin Descriptions FG484 Pin Number A2F200 Function A2F500 Function N17 NC NC N18 VCCFPGAIOB1 VCCFPGAIOB1 N19 VCCENVM VCCENVM N20 GNDENVM GNDENVM N21 NC NC N22 GND GND P1 NC IO69NDB5V0 P2 NC IO69PDB5V0 P3 GNDRCOSC GNDRCOSC P4 GND GND P5 NC NC P6 NC NC P7 GND GND P8 VCC VCC P9 GND GND P10 VCC VCC P11 GND GND P12 VCC VCC P13 GND GND P14 VCC VCC P15 GND GND P16 VCCFPGAIOB1 VCCFPGAIOB1 P17 TDI TDI P18 TCK TCK P19 GND GND P20 TMS TMS P21 TDO TDO P22 TRSTB TRSTB R1 MSS_RESET_N MSS_RESET_N R2 VCCFPGAIOB5 VCCFPGAIOB5 R3 GPIO_1/IO46RSB4V0 GPIO_1/IO55RSB4V0 R4 NC NC R5 NC NC R6 NC NC R7 NC NC R8 GND GND Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the bank assignment can be different for an I/O, or the function might be available only on a larger density device. 5- 58 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) FG484 Pin Number A2F200 Function A2F500 Function R9 VCC VCC R10 GND GND R11 VCC VCC R12 GND GND R13 VCC VCC R14 GND GND R15 VCC VCC R16 JTAGSEL JTAGSEL R17 NC NC R18 NC NC R19 NC NC R20 NC NC R21 VCCFPGAIOB1 VCCFPGAIOB1 R22 NC NC T1 GND GND T2 VCCMSSIOB4 VCCMSSIOB4 T3 GPIO_8/IO39RSB4V0 GPIO_8/IO48RSB4V0 T4 GPIO_11/IO57RSB4V0 GPIO_11/IO66RSB4V0 T5 GND GND T6 MAC_CLK MAC_CLK T7 VCCMSSIOB4 VCCMSSIOB4 T8 VCC33SDD0 VCC33SDD0 T9 VCC15A VCC15A T10 GNDAQ GNDAQ T11 GND33ADC0 GND33ADC0 T12 ADC7 ADC7 T13 NC TM4 T14 NC VAREF2 T15 VAREFOUT VAREFOUT T16 VCCMSSIOB2 VCCMSSIOB2 T17 SPI_1_DO/GPIO_24 SPI_1_DO/GPIO_24 T18 GND GND T19 NC NC T20 NC NC T21 VCCMSSIOB2 VCCMSSIOB2 T22 GND GND Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the bank assignment can be different for an I/O, or the function might be available only on a larger density device. R ev i si o n 1 0 5- 59 Pin Descriptions FG484 Pin Number A2F200 Function A2F500 Function U1 GND GND U2 GPIO_5/IO42RSB4V0 GPIO_5/IO51RSB4V0 U3 GPIO_10/IO58RSB4V0 GPIO_10/IO67RSB4V0 U4 VCCMSSIOB4 VCCMSSIOB4 U5 MAC_RXD[1]/IO53RSB4V0 MAC_RXD[1]/IO62RSB4V0 U6 NC NC U7 VCC33AP VCC33AP U8 VCC33N VCC33N U9 CM1 CM1 U10 VAREF0 VAREF0 U11 GND33ADC1 GND33ADC1 U12 ADC4 ADC4 U13 NC GNDTM2 U14 NC ADC11 U15 GNDVAREF GNDVAREF U16 VCC33SDD1 VCC33SDD1 U17 SPI_0_DO/GPIO_16 SPI_0_DO/GPIO_16 U18 UART_0_RXD/GPIO_21 UART_0_RXD/GPIO_21 U19 VCCMSSIOB2 VCCMSSIOB2 U20 I2C_1_SCL/GPIO_31 I2C_1_SCL/GPIO_31 U21 I2C_0_SCL/GPIO_23 I2C_0_SCL/GPIO_23 U22 GND GND V1 GPIO_0/IO47RSB4V0 GPIO_0/IO56RSB4V0 V2 GPIO_6/IO41RSB4V0 GPIO_6/IO50RSB4V0 V3 GPIO_9/IO38RSB4V0 GPIO_9/IO47RSB4V0 V4 MAC_MDIO/IO49RSB4V0 MAC_MDIO/IO58RSB4V0 V5 MAC_RXD[0]/IO54RSB4V0 MAC_RXD[0]/IO63RSB4V0 V6 GND GND V7 SDD0 SDD0 V8 ABPS1 ABPS1 V9 ADC2 ADC2 V10 VCC33ADC0 VCC33ADC0 V11 ADC6 ADC6 V12 ADC5 ADC5 V13 ABPS5 ABPS5 V14 NC ADC8 Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the bank assignment can be different for an I/O, or the function might be available only on a larger density device. 5- 60 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) FG484 Pin Number A2F200 Function A2F500 Function V15 NC GND33ADC2 V16 NC NC V17 GND GND V18 SPI_0_DI/GPIO_17 SPI_0_DI/GPIO_17 V19 SPI_1_DI/GPIO_25 SPI_1_DI/GPIO_25 V20 UART_1_TXD/GPIO_28 UART_1_TXD/GPIO_28 V21 I2C_0_SDA/GPIO_22 I2C_0_SDA/GPIO_22 V22 I2C_1_SDA/GPIO_30 I2C_1_SDA/GPIO_30 W1 GPIO_2/IO45RSB4V0 GPIO_2/IO54RSB4V0 W2 GPIO_7/IO40RSB4V0 GPIO_7/IO49RSB4V0 W3 GND GND W4 MAC_CRSDV/IO51RSB4V0 MAC_CRSDV/IO60RSB4V0 W5 MAC_TXD[1]/IO55RSB4V0 MAC_TXD[1]/IO64RSB4V0 W6 NC SDD2 W7 GNDA GNDA W8 TM0 TM0 W9 ABPS2 ABPS2 W10 GND33ADC0 GND33ADC0 W11 VCC15ADC1 VCC15ADC1 W12 ABPS6 ABPS6 W13 NC CM4 W14 NC ABPS9 W15 NC VCC33ADC2 W16 GNDA GNDA W17 PU_N PU_N W18 GNDSDD1 GNDSDD1 W19 SPI_0_CLK/GPIO_18 SPI_0_CLK/GPIO_18 W20 GND GND W21 SPI_1_SS/GPIO_27 SPI_1_SS/GPIO_27 W22 UART_1_RXD/GPIO_29 UART_1_RXD/GPIO_29 Y1 GPIO_3/IO44RSB4V0 GPIO_3/IO53RSB4V0 Y2 VCCMSSIOB4 VCCMSSIOB4 Y3 GPIO_15/IO34RSB4V0 GPIO_15/IO43RSB4V0 Y4 MAC_TXEN/IO52RSB4V0 MAC_TXEN/IO61RSB4V0 Y5 VCCMSSIOB4 VCCMSSIOB4 Y6 GNDSDD0 GNDSDD0 Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the bank assignment can be different for an I/O, or the function might be available only on a larger density device. R ev i si o n 1 0 5- 61 Pin Descriptions FG484 Pin Number A2F200 Function A2F500 Function Y7 CM0 CM0 Y8 GNDTM0 GNDTM0 Y9 ADC0 ADC0 Y10 VCC15ADC0 VCC15ADC0 Y11 ABPS7 ABPS7 Y12 TM3 TM3 Y13 NC ABPS8 Y14 NC GND33ADC2 Y15 NC VCC15ADC2 Y16 VCCMAINXTAL VCCMAINXTAL Y17 SDD1 SDD1 Y18 PTEM PTEM Y19 VCC33A VCC33A Y20 SPI_0_SS/GPIO_19 SPI_0_SS/GPIO_19 Y21 VCCMSSIOB2 VCCMSSIOB2 Y22 UART_0_TXD/GPIO_20 UART_0_TXD/GPIO_20 Note: Shading denotes pins that do not have completely identical functions from density to density. For example, the bank assignment can be different for an I/O, or the function might be available only on a larger density device. 5- 62 R ev i sio n 1 0 6 – Datasheet Information List of Changes The following table lists critical changes that were made in each revision of the SmartFusion datasheet. Revision Revision 10 (January 2013) Changes Page The "SmartFusion cSoC Family Product Table" section has been updated to specify that External Memory Controller support for A2F060-TQ144 is not available (SAR 41555). II The following Note was added to the "Package I/Os: MSS + FPGA I/Os" table (SAR 41027): "There are no LVTTL capable direct inputs available on A2F060 devices." III The "Product Ordering Codes" section has been updated to mention "Y" as "Blank" mentioning "Device Does Not Include License to Implement IP Based on the Cryptography Research, Inc. (CRI) Patent Portfolio" (SAR 43218). VI Added a note to Table 2-3 • Recommended Operating Conditions5,6 (SAR 43428): The programming temperature range supported is Tambient = 0°C to 85°C. 2-3 Statements about the state of the I/Os during programming were updated in the following sections: "I/O Power-Up and Supply Voltage Thresholds for Power-On Reset (Commercial and Industrial)" and "User I/O Naming Conventions" (SAR 43380). 2-4, 5-7 In Table 2-4 • FPGA and Embedded Flash Programming, Storage and Operating Limits, the upper value of temperature ranges was corrected from "Min." to "Max." (SAR 41826). 2-4 Information for A2F200M3F-CS288 was added to Table 2-6 • Package Thermal Resistance. The die size column was removed (SARs 41828, 42168). 2-7 Also added details for A2F200M3F-PQG208I (SAR 35728). Added the following note to Table 2-65 • LVDS and Table 2-68 • LVPECL: "The above mentioned timing parameters correspond to 24mA drive strength." (SAR 43457) 2-41, 2-43 The note in Table 2-86 • SmartFusion CCC/PLL Specification referring the reader to SmartGen was revised to refer instead to the online help associated with the core (SAR 34816). 2-63 The SRAM collision data in Table 2-87 • RAM4K9 and Table 2-88 • RAM512X18 was updated (SAR 38583). 2-69, 2-70 The maximum input bias current for comparators 1, 3, 5, 7, and 9, in Table 2-98 • Comparator Performance Specifications, was revised from 60 to 100 nA (SAR 36008). 2-84 Corrected the Start-up time unit from "ms" to "µs" in Table 2-100 • Voltage Regulator (SAR 39395). 2-87 Added the "References" section for "SmartFusion Development Tools" (SAR 43460). 3-6 Updated the "References" section for Programming (SAR 43304). Added the "Application Notes on IAP Programming Technique" section (SAR 43458). 4-9 R ev i si o n 1 0 6 -1 Datasheet Information Revision Revision 10 (continued) Changes Page A note was added to the "Supply Pins" table, referring to the SmartFusion cSoC Board Design Guidelines application note for details on VCCPLLx capacitor recommendations (SAR 42183). 5-1 In the "Supply Pins" section, the VPP capacitor value section has been modified to: "For proper programming, 0.01μF, and 0.1μF to 1μF capacitors, (both rated at 16 V) are to be connected in parallel across VPP and GND, and positioned as close to the FPGA pins as possible." (SAR 43569). 5-1 In the "User Pins" section, added description ’These pins are located in Bank-2 (GPIO_16 to GPIO_31) for A2F060, A2F200, and A2F500 devices.’ for GPIO_x (SAR 28595). 5-6 Updated the MAINXIN and MAINXOUT pin descriptions in the "Special Function Pins" section to read "If an external RC network or clock input is used, the RC components are connected to the MAINXIN pin, with MAINXOUT left floating. When the main crystal oscillator is not being used, MAINXIN and MAINXOUT pins can be left floating." (SAR 42807). 5-8 Live at Power-Up (LAPU) has been replaced with ’Instant On’. NA Revision 9 The number of signal conditioning blocks (SCBs) for A2F500 in the "SmartFusion (September 2012) cSoC Family Product Table" was corrected to 4. Previously it had incorrectly been listed as 2 (SAR 39536). II The "Product Ordering Codes" section was revised to clarify that only one eNVM size for each device is currently available (SAR 40333). VI Information pertaining to analog I/Os was added to the "Specifying I/O States During Programming" section on page 1-3 (SAR 34836). 1-3 The formulas in the table notes for Table 2-29 • I/O Weak Pull-Up/Pull-Down Resistances were corrected (SAR 34757). 2-27 Maximum values for VIL and VIH were corrected in LVPECL Table 2-66 • Minimum and Maximum DC Input and Output Levels (SAR 37695). 2-43 Minimum pulse width High and Low values were added to the tables in the "Global Tree Timing Characteristics" section. The maximum frequency for global clock parameter was removed from these tables because a frequency on the global is only an indication of what the global network can do. There are other limiters such as the SRAM, I/Os, and PLL. SmartTime software should be used to determine the design frequency (SAR 29270). 2-59 The temperature range for accuracy in Table 2-83 • Electrical Characteristics of the RC Oscillator was changed from "0°C to 85°C" to "–40°C to 100°C" (SAR 33670). The units for jitter were changed from ps to ps RMS (SAR 34270). 2-61 In Table 2-84 • Electrical Characteristics of the Main Crystal Oscillator, the output jitter for the 10 MHz crystal was corrected from 50 ps RMS to 1 ns RS (SAR 32939). Values for the startup time of VILXTAL were added (SAR 25248). 2-62 In Table 2-85 • Electrical Characteristics of the Low Power Oscillator, output jitter was changed from 50 ps RMS to 30 ps RMS (SAR 32939). A value for ISTBXTAL standby current was added (SAR 25249). Startup time for a test load of 30 pF was added (SAR 27436). 2-62 6- 2 R ev isio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) Revision Revision 9 (continued) Changes Page The following note was added to Table 2-86 • SmartFusion CCC/PLL Specification in regard to delay increments in programmable delay blocks (SAR 34816): 2-63 "When the CCC/PLL core is generated by Microsemi core generator software, not all delay values of the specified delay increments are available. Refer to SmartGen online help for more information." Revision 8 (March 2012) Figure 2-36 • FIFO Read and Figure 2-37 • FIFO Write have been added (SAR 34851). 2-72 Information regarding the MSS resetting itself after IAP of the FPGA fabric was added to the "Reprogramming the FPGA Fabric Using the Cortex-M3" section (SAR 37970). 4-8 Instructions for unused VCC33ADCx pins were revised in "Supply Pins" (SAR 41137). 5-1 Libero IDE was changed to Libero SoC throughout the document (SAR 40264). N/A In the "Analog Front-End (AFE)" section, the resolution for the first-order sigma delta DAC was corrected from 12-bit to "8-bit, 16-bit, or 24-bit." The same correction was made in the "SmartFusion cSoC Family Product Table" (SAR 36541). I, II The "SmartFusion cSoC Family Product Table" was revised to break out the features by package as well as device. II The table now indicates that only one SPI is available for the PQ208 package in A2F200 and A2F500, and in the TQ144 package for A2F060 (SAR 33477). The EMC address bus size has been corrected to 26 bits (SAR 35664). The "SmartFusion cSoC Device Status" table was revised to change the CS288 package for A2F200 and A2F500 from preliminary to production status (SAR 37811). III TQ144 package information for A2F060 was added to the "Package I/Os: MSS + FPGA I/Os" table, "SmartFusion cSoC Device Status" table, "Product Ordering Codes", and "Temperature Grade Offerings" table (SAR 36246). III, VI Table 1 • SmartFusion cSoC Package Sizes Dimensions is new (SAR 31178). III The Halogen-Free Packaging code (H) was removed from the "Product Ordering Codes" table (SAR 34017). VI The "Specifying I/O States During Programming" section is new (SAR 34836). 1-3 The reference to guidelines for global spines and VersaTile rows, given in the "Global Clock Dynamic Contribution—PCLOCK" section, was corrected to the "Device Architecture" chapter in the SmartFusion FPGA Fabric User's Guide (SAR 34742). 2-15 The AC Loading figures in the "Single-Ended I/O Characteristics" section were updated to match tables in the "Summary of I/O Timing Characteristics – Default I/O Software Settings" section (SAR 34891). 2-30, 2-24 The following sentence was deleted from the "2.5 V LVCMOS" section (SAR 34799): "It uses a 5 V–tolerant input buffer and push-pull output buffer." 2-32 In the SRAM "Timing Characteristics" tables, reference was made to a new application note, Simultaneous Read-Write Operations in Dual-Port SRAM for FlashBased cSoCs and FPGAs, which covers these cases in detail (SAR 34874). 2-69 The note for Table 2-93 • Current Monitor Performance Specification was modified to include the statement that the restriction on the TM pad being no greater than 10 mV above the CM pad.is applicable only if current monitor is used (SAR 26373). 2-77 The unit "FR" in Table 2-97 • ABPS Performance Specifications and Table 2-99 • Analog Sigma-Delta DAC, used to designate full-scale error, was changed to "FS" and clarified with a table note (SAR 35342). 2-82, 2-85 R ev i si o n 1 0 6 -3 Datasheet Information Revision Revision 8 (continued) Revision 7 (August 2011) Changes Page The description of "In-application programming (IAP)" methodology was changed to state the difference for A2F060 and A2F500 compared to A2F200 (SAR 37808). 4-7 The "Global I/O Naming Conventions" section is new (SARs 28996, 31147). The description for IO "User Pins" was revised accordingly and moved out of the table and into a new section: "User I/O Naming Conventions". 5-6, 5-6 The descriptions for "MAINXIN" and "MAINXOUT" were revised to state how they should be handled if using an external RC network or clock input (SAR 32594). 5-8 The description and type was revised for the "MSS_RESET_N" pin (SAR 34133). 5-9 The "TQ144" section and pin table for A2F060 are new (SAR 36246). 5-18 The title of the datasheet was changed from SmartFusion Intelligent Mixed Signal FPGAs to SmartFusion Customizable System-on-Chip (cSoC). Terminology throughout was changed accordingly. The term cSoC defines a category of devices that include at least FPGA fabric and a processor subsystem of some sort. It can also include any of the following: analog, SerDes, ASIC blocks, customer specific IP, or application-specific IP. SmartFusion is Microsemi’s first cSoC (SAR 33071). N/A The "SmartFusion cSoC Family Product Table" was revised to remove the note stating that the A2F060 device is under definition and subject to change (SAR 33070). A note was added for EMC, stating that it is not available on A2F500 for the PQ208 package (SAR 33041). II The "SmartFusion cSoC Device Status" table was revised. The status for A2F060 CS288 and FG256 moved from Advance to Preliminary. A2F200 PQ208 and A2F500 PQ208 moved from Advance to Production (SAR 33069). III The "Package I/Os: MSS + FPGA I/Os" table was revised. The number of direct analog inputs for A2F060 packages increased from 6 to 11. The number of MSS I/Os for the A2F060 FG256 package increased from 25 to 26 (SAR 33070). A note was added stating that EMC is not available for the A2F500 PQ208 package (SAR 33041). III The note associated with the "SmartFusion cSoC System Architecture" diagram was corrected from "Architecture for A2F500" to "Architecture for A2F200" (SAR 32578). V The Licensed DPA Logo was added to the "Product Ordering Codes" section. The trademarked Licensed DPA Logo identifies that a product is covered by a DPA counter-measures license from Cryptography Research (SAR 32151). VI The "Security" section and "Secure Programming" section were updated to clarify that although no existing security measures can give an absolute guarantee, SmartFusion cSoCs implement the best security available in the industry (SAR 32865). 1-2, 4-9 Storage temperature, TSTG, and junction temperature, TJ, were added to Table 2-1 • Absolute Maximum Ratings (SAR 30863). 2-1 AC/DC characteristics for A2F060 were added to the "SmartFusion DC and Switching Characteristics" chapter (SAR 33132). The following tables were updated: Table 2-14 • Different Components Contributing to Dynamic Power Consumption in SmartFusion cSoCs 2-12 Table 2-15 • Different Components Contributing to the Static Power Consumption in SmartFusion cSoCs 2-13 Table 2-90 • eNVM Block Timing, Worst Commercial Case Conditions: TJ = 85°C, VCC = 1.425 V 2-75 Table 2-99 • Analog Sigma-Delta DAC Table 2-101 • SPI Characteristics 6- 4 R ev isio n 1 0 2-85 2-89 SmartFusion Customizable System-on-Chip (cSoC) Revision Revision 7 (continued) Changes Page The following sentence was removed from the "I/O Power-Up and Supply Voltage Thresholds for Power-On Reset (Commercial and Industrial)" section because it is incorrect (SAR 31047): 2-4 "The many different supplies can power up in any sequence with minimized current spikes or surges." Table 2-8 • Quiescent Supply Current Characteristics was divided into two tables: one for power supplies configurations and one for quiescent supply current. SoC mode was added to both tables (SAR 26378) and VCOMPLAx was removed from Table 2-8 • Power Supplies Configuration (SAR 29591). Quiescent supply current values were updated in Table 2-9 • Quiescent Supply Current Characteristics (SAR 33067). 2-10 The "Total Static Power Consumption—PSTAT" section was revised: "NeNVM-BLOCKS * PDC4" was removed from the equation for PSTAT (SAR 33067). 2-14 Table 2-14 • Different Components Contributing to Dynamic Power Consumption in SmartFusion cSoCs and Table 2-15 • Different Components Contributing to the Static Power Consumption in SmartFusion cSoCs were revised to reflect updates in the SmartFusion power calculator (SARs 26405, 33067). 2-12, 2-13 Table 2-82 • A2F060 Global Resource is new (SAR 33132). 2-61 Output duty cycle was corrected to 50% in Table 2-83 • Electrical Characteristics of the RC Oscillator. It was incorrectly noted as 1% previously. Operating current for 3.3 domain was added (SAR 32940). 2-61 Table 2-86 • SmartFusion CCC/PLL Specification was revised to add information and measurements regarding CCC output peak-to-peak period jitter (SAR 32996). 2-63 The port names in the SRAM "Timing Waveforms", SRAM "Timing Characteristics" tables, Figure 2-38 • FIFO Reset, and the FIFO "Timing Waveforms" tables were revised to ensure consistency with the software names (SAR 29991). 2-66 to 2-75 Table 2-90 • eNVM Block Timing, Worst Commercial Case Conditions: TJ = 85°C, VCC = 1.425 V was revised to correct the maximum frequencies (SAR 32410). 2-75 Table 2-96 • VAREF Stabilization Time was moved to the "SmartFusion DC and Switching Characteristics" section from the SmartFusion Programmable Analog User’s Guide because the information is extracted from characterization (SAR 24298). 2-81 The hysteresis section in Table 2-98 • Comparator Performance Specifications was revised (SAR 33158). 2-84 The "SmartFusion Development Tools" was extensively updated (SAR 33216). 3-1 The text following Table 4-2 • JTAG Pin Descriptions was updated to add information on control of the JTAGSEL pin. Manual jumpers on the evaluation and development kits allow manual selection of this function for J-Link and ULINK debuggers (SAR 25592). 4-7 R ev i si o n 1 0 6 -5 Datasheet Information Revision Revision 7 (continued) Changes Page Usage instructions, such as how to handle the pin when unused, were added for the following supply pins (SAR 29769): 5-2 through 5-3 "VCC15A" "VCC15ADC0" through "VCC15ADC2" "VCC33ADC0" through "VCC33ADC2" "VCC33AP" "VCC33ADC2" "VCCLPXTAL" "VCCMAINXTAL" "VCCMSSIOB2" "VCCPLLx" "VCCRCOSC" "VDDBAT" The "IO" description was revised to clarify the definitions of u, I/O pair, and w, differential pair (SAR 31147). Information on configuration of unused I/Os (including unused MSS I/Os, SAR 26891) was added (SAR 32643). Usage instructions were added for the following pins (SAR 29769): "MSS_RESET_N" "TCK" 5-6 5-9 through 5-13 "TMS" "TRSTB" "MAC_CLK" Package names used in the "Pin Assignment Tables" section were revised to match standards given in Package Mechanical Drawings (SAR 27395). 5-18 The pin assignments for A2F060 for "TQ144" and "FG256" have been revised due to the device status change from advance to preliminary (SAR 33068). 5-18, 5-39 The "TQ144" and "FG256" pin assignment sections previously compared functions between A2F060/A2F200 devices in one table and A2F200/A2F500 in a separate table. Functions for all three devices have now been combined into one table for each package (SAR 33072). Revision 6 (March 2011) The "PQ208" pin table was revised for A2F500 to remove EMC functions, which are not available for this device/package combination (SAR 33041). 5-32 The "PQ208" package was added to product tables and "Product Ordering Codes" for A2F200 and A2F500 (SAR 31005). III The "Package I/Os: MSS + FPGA I/Os" table was revised to add the CS288 package for A2F060 and the PQ208 package for A2F200 and A2F500. A row was added for shared analog inputs (SAR 31034). III The "SmartFusion cSoC Device Status" table was updated (SAR 31084). III VCCESRAM was added to Table 2-1 • Absolute Maximum Ratings, Table 2-3 • 2-1, 2-3, Recommended Operating Conditions5,6, Table 2-8 • Power Supplies Configuration, 2-10, 5-1 and the "Supply Pins" table (SAR 31035). The following note was removed from Table 2-8 • Power Supplies Configuration (SAR 30984): "Current monitors and temperature monitors should not be used when Power-Down and/or Sleep mode are required by the application." 6- 6 R ev isio n 1 0 2-10 SmartFusion Customizable System-on-Chip (cSoC) Revision Revision 6 (continued) Changes Page Dynamic power values were updated in the following tables. The table subtitles changed where FPGA I/O banks were involved to note "I/O assigned to EMC I/O pins" (SAR 30987). 2-10 Table 2-10 • Summary of I/O Input Buffer Power (per pin) – Default I/O Software Settings 2-11 Table 2-13 • Summary of I/O Output Buffer Power (per pin) – Default I/O Software Settings. The "Timing Model" was updated (SAR 30986). 2-19 Values in the timing tables for the following sections were updated. Table subtitles were updated for FPGA I/O banks to note "I/O assigned to EMC I/O pins" (SAR 30986). "Overview of I/O Performance" section: Table 2-24, Table 2-25 "Detailed I/O DC Characteristics" section: Table 2-38, Table 2-39, Table 2-40, Table 2-44, Table 2-45, Table 2-46, Table 2-50, Table 2-51, Table 2-52, Table 2-56, Table 2-57, Table 2-58, Table 2-61, Table 2-62 "LVDS" section: Table 2-65 2-23 2-26 "Global Tree Timing Characteristics" section: Table 2-80, Table 2-81 2-40 2-42 2-59 The "PQ208" section and pin tables are new (SAR 31005). 5-32 Global clocks were removed from the A2F060 pin table for the "CS288" and "FG256" packages, resulting in changed function names for affected pins (SAR 31033). 5-40 Table 2-2 • Analog Maximum Ratings was revised. The recommended CM[n] pad Revision 5 (December 2010) voltage (relative to ground) was changed from –11 to –0.3 (SAR 28219). 2-2 Table 2-7 • Temperature and Voltage Derating Factors for Timing Delays was revised to change the values for 100ºC. 2-9 Power-down and Sleep modes, and all associated notes, were removed from Table 2-8 • Power Supplies Configuration (SAR 29479). IDC3 and IDC4 were renamed to IDC1 and IDC2 (SAR 29478). These modes are no longer supported. A note was added to the table stating that current monitors and temperature monitors should not be used when Power-down and/or Sleep mode are required by the application. 2-10 The "Power-Down and Sleep Mode Implementation" section was deleted (SAR 29479). N/A Values for PAC9 and PAC10 for LVDS and LVPECL were revised in Table 2-10 • Summary of I/O Input Buffer Power (per pin) – Default I/O Software Settings and Table 2-12 • Summary of I/O Output Buffer Power (per pin) – Default I/O Software Settings*. 2-10, 2-11 Values for PAC1 through PAC4, PDC1, and PDC2 were added for A2F500 in Table 2-14 • Different Components Contributing to Dynamic Power Consumption in SmartFusion cSoCs and Table 2-15 • Different Components Contributing to the Static Power Consumption in SmartFusion cSoCs 2-12, 2-13 The equation for "Total Dynamic Power Consumption—PDYN" in "SoC Mode" was revised to add PMSS. The "Microcontroller Subsystem Dynamic Contribution—PMSS" section is new (SAR 29462). 2-14, 2-18 Information in Table 2-24 • Summary of I/O Timing Characteristics—Software Default Settings (applicable to FPGA I/O banks) and Table 2-25 • Summary of I/O Timing Characteristics—Software Default Settings (applicable to MSS I/O banks) was updated. 2-25 "LVPECL" section: Table 2-68 R ev i si o n 1 0 6 -7 Datasheet Information Revision Revision 5 (continued) Changes Page Available values for the Std. speed were added to the timing tables from Table 2-38 • 3.3 V LVTTL / 3.3 V LVCMOS High Slew to Table 2-92 • JTAG 1532 (SAR 29331). 2-31 to 2-76 One or more values changed for the –1 speed in tables covering 3.3 V LVCMOS, 2.5 V LVCMOS, 1.8 V LVCMOS, 1.5 V LVCMOS, Combinatorial Cell Propagation Delays, and A2F200 Global Resources. Table 2-80 • A2F500 Global Resource is new. 2-60 Table 2-90 • eNVM Block Timing, Worst Commercial Case Conditions: TJ = 85°C, VCC = 1.425 V was revised (SAR 27585). 2-75 The programmable analog specifications tables were revised with updated information. 2-77 to 2-87 Table 4-1 • Supported JTAG Programming Hardware was revised by adding a note to indicate "planned support" for several of the items in the table. 4-7 The note on JTAGSEL in the "In-System Programming" section was revised to state that SoftConsole selects the appropriate TAP controller using the CTXSELECT JTAG command. When using SoftConsole, the state of JTAGSEL is a "don't care" (SAR 29261). 4-7 The "CS288" and "FG256" pin tables for A2F060 are new, comparing the A2F060 function with the A2F200 function (SAR 29353). 5-23 The "Handling When Unused" column was removed from the "FG256" pin table for A2F200 and A2F500 (SAR 29691). 5-39 Revision 4 Table 2-8 • Power Supplies Configuration was revised. VCCRCOSC was moved to a (September 2010) column of its own with new values. VCCENVM was added to the table. Standby mode for VJTAG and VPP was changed from 0 V to N/A. "Disable" was changed to "Off" in the eNVM column. The column for RCOSC was deleted. 2-10 The "Power-Down and Sleep Mode Implementation" section was revised to include VCCROSC. 2-11 Revision 3 The "I/Os and Operating Voltage" section was revised to list "single 3.3 V power (September 2010) supply with on-chip 1.5 V regulator" and "external 1.5 V is allowed" (SAR 27663). I The CS288 package was added to the "Package I/Os: MSS + FPGA I/Os" table (SAR III, VI, VI 27101), "Product Ordering Codes" table, and "Temperature Grade Offerings" table (SAR 27044). The number of direct analog inputs for the FG256 package in A2F060 was changed from 8 to 6. Two notes were added to the "SmartFusion cSoC Family Product Table" indicating limitations for features of the A2F500 device: II Two PLLs are available in CS288 and FG484 (one PLL in FG256). [ADCs, DACs, SCBs, comparators, current monitors, and bipolar high voltage monitors are] Available on FG484 only. FG256 and CS288 packages offer the same programmable analog capabilities as A2F200. Table cells were merged in rows containing the same values for easier reading (SAR 24748). The security feature option was added to the "Product Ordering Codes" table. 6- 8 R ev isio n 1 0 VI SmartFusion Customizable System-on-Chip (cSoC) Revision Revision 3 (continued) Changes Page In Table 2-3 • Recommended Operating Conditions5,6, the VDDBAT recommended operating range was changed from "2.97 to 3.63" to "2.7 to 3.63" (SAR 25246). Recommended operating range was changed to "3.15 to 3.45" for the following voltages: 2-3 VCC33A VCC33ADCx VCC33AP VCC33SDDx VCCMAINXTAL VCCLPXTAL Two notes were added to the table (SAR 27109): 1. The following 3.3 V supplies should be connected together while following proper noise filtering practices: VCC33A, VCC33ADCx, VCC33AP, VCC33SDDx, VCCMAINXTAL, and VCCLPXTAL. 2. The following 1.5 V supplies should be connected together while following proper noise filtering practices: VCC, VCC15A, and VCC15ADCx. In Table 2-3 • Recommended Operating Conditions5,6, the description for VCCLPXTAL was corrected to change "32 Hz" to "32 KHz" (SAR 27110). 2-3 The "Power Supply Sequencing Requirement" section is new (SAR 27178). 2-4 Table 2-8 • Power Supplies Configuration was revised to change most on/off entries to voltages. Note 5 was added, stating that "on" means proper voltage is applied. The values of 6 µA and 16 µA were removed for IDC1 and IDC2 for 3.3 V. A note was added for IDC1 and IDC2: "Power mode and Sleep mode are consuming higher current than expected in the current version of silicon. These specifications will be updated when new version of the silicon is available" (SAR 27926). 2-10 The "Power-Down and Sleep Mode Implementation" section is new (SAR 27178). 2-11 A note was added to Table 2-86 • SmartFusion CCC/PLL Specification, pertaining to fout_CCC, stating that "one of the CCC outputs (GLA0) is used as an MSS clock and is limited to 100 MHz (maximum) by software" (SAR 26388). 2-63 Table 2-90 • eNVM Block Timing, Worst Commercial Case Conditions: TJ = 85°C, VCC = 1.425 V was revised. Values were included for A2F200 and A2F500, for –1 and Std. speed grades. A note was added to define 6:1:1:1 and 5:1:1:1 (SAR 26166). 2-75 The units were corrected (mV instead of V) for input referred offset voltage, GDEC[1:0] = 00 in Table 2-97 • ABPS Performance Specifications (SAR 25381). 2-82 The test condition values for operating current (ICC33A, typical) were changed in Table 2-100 • Voltage Regulator (SAR 26465). 2-87 Figure 2-46 • Typical Output Voltage was revised to add legends for the three curves, stating the load represented by each (SAR 25247). 2-88 The "SmartFusion Programming" chapter was moved to this document from the SmartFusion Subsystem Microcontroller User’s Guide (SAR 26542). The "Typical Programming and Erase Times" section was added to this chapter. 4-7 Figure 4-1 • TRSTB Logic was revised to change 1.5 V to "VJTAG (1.5 V to 3.3 V nominal)" (SAR 24694). 4-8 R ev i si o n 1 0 6 -9 Datasheet Information Revision Revision 3 (continued) Changes Two notes were added to the "Supply Pins" table (SAR 27109): Page 5-1 1. The following supplies should be connected together while following proper noise filtering practices: VCC33A, VCC33ADCx, VCC33AP, VCC33SDDx, VCCMAINXTAL, and VCCLPXTAL. 2. The following 1.5 V supplies should be connected together while following proper noise filtering practices: VCC, VCC15A, and VCC15ADCx. The descriptions for the "VCC33N", "NCAP", and "PCAP" pins were revised to include 5-2, 5-9, information on what to do if analog SCB features and SDDs are not used (SAR 5-9 26744). Revision 2 (May 2010) Revision 1 (March 2010) 6- 10 Information was added to the "User Pins" table regarding tristating of used and unused GPIO pins. The IO portion of the table was revised to state that unused I/O pins are disabled by Libero IDE software and include a weak pull-up resistor (SAR 26890). Information was added regarding behavior of used I/O pins during power-up. 5-6 The type for "EMC_RW_N" was changed from In/out to Out (SAR 25113). 5-12 A note was added to the "Analog Front-End (AFE)" table stating that unused analog inputs should be grounded (SAR 26744). 5-14 The "TQ144" section is new, with pin tables for A2F200 and A2F500 (SAR 27044). 5-18 The "FG256" pin table was replaced and now includes "Handling When Unused" information (SAR 27709). 5-39 Embedded nonvolatile flash memory (eNVM) was changed from "64 to 512 Kbytes" to "128 to 512 Kbytes" in the "Microcontroller Subsystem (MSS)" section and "SmartFusion cSoC Family Product Table" (SAR 26005). I, II The main oscillator range of values was changed to "32 KHz to 20 MHz" in the "Microcontroller Subsystem (MSS)" section and the "SmartFusion cSoC Family Product Table" (SAR 24906). I, II The value for tPD was changed from 50 ns to 15 ns for the high-speed voltage comparators listed in the "Analog Front-End (AFE)" section (SAR 26005). I The number of PLLs for A2F200 was changed from 2 to 1 in the "SmartFusion cSoC Family Product Table" (SAR 25093). II Values for direct analog input, total analog input, and total I/Os were updated for the FG256 package, A2F060, in the "Package I/Os: MSS + FPGA I/Os" table. The Max. column was removed from the table (SAR 26005). III The Speed Grade section of the "Product Ordering Codes" table was revised (SAR 25257). VI The "Product Ordering Codes" table was revised to add "blank" as an option for leadfree packaging and application (junction temperature range). VI Table 2-3 • Recommended Operating Conditions5,6 was revised. Ta (ambient temperature) was replaced with TJ (junction temperature). 2-3 PDC5 was deleted from Table 2-15 • Different Components Contributing to the Static Power Consumption in SmartFusion cSoCs. 2-13 The formulas in the footnotes for Table 2-29 • I/O Weak Pull-Up/Pull-Down Resistances were revised. 2-27 The values for input biased current were revised in Table 2-93 • Current Monitor Performance Specification. 2-77 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) Revision Revision 0 (March 2010) Changes Page The "Analog Front-End (AFE)" section was updated to change the throughput for 10bit mode from 600 Ksps to 550 Ksps. I The A2F060 device was added to product information tables. N/A The "Product Ordering Codes" table was updated to removed Std. speed and add speed grade 1. Pre-production was removed from the application ordering code category. VI The "SmartFusion cSoC Block Diagram" was revised. IV The "Datasheet Categories" section was updated, referencing the "SmartFusion cSoC Block Diagram" table, which is new. The "VCCI" parameter was renamed to "VCCxxxxIOBx." 1-4, IV N/A "Advanced I/Os" were renamed to "FPGA I/Os." Generic pin names that represent multiple pins were standardized with a lower case x as a placeholder. For example, VAREFx designates VAREF0, VAREF1, and VAREF2. Modes were renamed as follows: Operating mode was renamed to SoC mode. 32KHz Active mode was renamed to Standby mode. Battery mode was renamed to Time Keeping mode. Table entries have been filled with values as data has become available. Table 2-1 • Absolute Maximum Ratings, Table 2-2 • Analog Maximum Ratings, and Table 2-3 • Recommended Operating Conditions5,6 were revised extensively. 2-1 through 2-3 Device names were updated in Table 2-6 • Package Thermal Resistance. 2-7 Table 2-8 • Power Supplies Configuration was revised extensively. 2-10 Table 2-11 • Summary of I/O Input Buffer Power (per pin) – Default I/O Software Settings was revised extensively. 2-11 Removed "Example of Power Calculation." N/A Table 2-14 • Different Components Contributing to Dynamic Power Consumption in SmartFusion cSoCs was revised extensively. 2-12 Table 2-15 • Different Components Contributing to the Static Power Consumption in SmartFusion cSoCs was revised extensively. 2-13 The "Power Calculation Methodology" section was revised. 2-14 Table 2-83 • Electrical Characteristics of the RC Oscillator was revised extensively. 2-61 Table 2-85 • Electrical Characteristics of the Low Power Oscillator was revised extensively. 2-62 The parameter tRSTBQ was changed to TC2CWRH in Table 2-87 • RAM4K9. 2-69 The 12-bit mode row for integral non-linearity was removed from Table 2-95 • ADC Specifications. The typical value for 10-bit mode was revised. The table note was punctuated correctly to make it clear. 2-80 Figure 37-34 • Write Access after Write onto Same Address, Figure 37-34 • Read Access after Write onto Same Address, and Figure 37-34 • Write Access after Read onto Same Address were deleted. N/A Table 2-100 • Voltage Regulator was revised extensively. 2-87 The "Serial Peripheral Interface (SPI) Characteristics" section and "Inter-Integrated Circuit (I2C) Characteristics" section are new. 2-89, 2-91 R ev i si o n 1 0 6- 11 Datasheet Information Revision Revision 0 (continued) Changes "SmartFusion Development Tools" section was replaced with new content. Page 3-1 The pin description tables were revised by adding additional pins to reflect the pinout for A2F500. 5-1 through 5-16 The descriptions for "GNDSDD1" and "VCC33SDD1" were revised. 5-1, 5-2 The description for "VCC33A" was revised. 5-2 The pin tables for the "FG256" and "FG484" were replaced with tables that compare pin functions across densities for each package. 5-39 Draft B The "Digital I/Os" section was renamed to the "I/Os and Operating Voltage" section (December 2009) and information was added regarding digital and analog VCC. I The "SmartFusion cSoC Family Product Table" and "Package I/Os: MSS + FPGA I/Os" section were revised. II The terminology for the analog blocks was changed to "programmable analog," consisting of two blocks: the analog front-end and analog compute engine. This is reflected throughout the text and in the "SmartFusion cSoC Block Diagram". IV The "Product Ordering Codes" table was revised to add G as an ordering code for eNVM size. VI Timing tables were populated with information that has become available for speed grade –1. N/A All occurrences of the VMV parameter were removed. N/A The SDD[n] voltage parameter was removed from Table 2-2 • Analog Maximum Ratings. 2-2 Table 36-4 • Flash Programming Limits – Retention, Storage and Operating Temperature was replaced with Table 2-4 • FPGA and Embedded Flash Programming, Storage and Operating Limits. 2-4 The "Thermal Characteristics" section was revised extensively. 2-7 Table 2-8 • Power Supplies Configuration was revised significantly. 2-10 Table 2-14 • Different Components Contributing to Dynamic Power Consumption in SmartFusion cSoCs and Table 2-15 • Different Components Contributing to the Static Power Consumption in SmartFusion cSoCs were updated. 2-12 Figure 2-2 • Timing Model was updated. 2-19 The temperature associated with the reliability for LVTTL/LVCMOS in Table 2-34 • I/O Input Rise Time, Fall Time, and Related I/O Reliability was changed from 110º to 100º. 2-29 The values in Table 2-78 • Combinatorial Cell Propagation Delays were updated. 2-57 Table 2-85 • Electrical Characteristics of the Low Power Oscillator is new. Table 2-84 • Electrical Characteristics of the Main Crystal Oscillator was revised. 2-62 Table 2-90 • eNVM Block Timing, Worst Commercial Case Conditions: TJ = 85°C, VCC = 1.425 V and Table 2-91 • FlashROM Access Time, Worse Commercial Case Conditions: TJ = 85°C, VCC = 1.425 V are new. 2-75 The performance tables in the "Programmable Analog Specifications" section were revised, including new data available. Table 2-99 • Analog Sigma-Delta DAC is new. 2-77 The "256-Pin FBGA" table for A2F200 is new. 4-15 6- 12 R ev i sio n 1 0 SmartFusion Customizable System-on-Chip (cSoC) Datasheet Categories Categories In order to provide the latest information to designers, some datasheet parameters are published before data has been fully characterized from silicon devices. The data provided for a given device, as highlighted in the "SmartFusion cSoC Device Status" table on page III, is designated as either "Product Brief," "Advance," "Preliminary," or "Production." The definitions of these categories are as follows: Product Brief The product brief is a summarized version of a datasheet (advance or production) and contains general product information. This document gives an overview of specific device and family information. Advance This version contains initial estimated information based on simulation, other products, devices, or speed grades. This information can be used as estimates, but not for production. This label only applies to the DC and Switching Characteristics chapter of the datasheet and will only be used when the data has not been fully characterized. Preliminary The datasheet contains information based on simulation and/or initial characterization. The information is believed to be correct, but changes are possible. Production This version contains information that is considered to be final. Export Administration Regulations (EAR) The products described in this document are subject to the Export Administration Regulations (EAR). They could require an approved export license prior to export from the United States. An export includes release of product or disclosure of technology to a foreign national inside or outside the United States. Microsemi SoC Products Group Safety Critical, Life Support, and High-Reliability Applications Policy The SoC Products Group products described in this advance status document may not have completed the SoC Products Group’s qualification process. Products may be amended or enhanced during the product introduction and qualification process, resulting in changes in device functionality or performance. It is the responsibility of each customer to ensure the fitness of any product (but especially a new product) for a particular purpose, including appropriateness for safety-critical, life-support, and other high-reliability applications. Consult the SoC Products Group’s Terms and Conditions for specific liability exclusions relating to life-support applications. A reliability report covering all of the SoC Products Group’s products is available on the SoC Products Group website at http://www.microsemi.com/soc/documents/ORT_Report.pdf. Microsemi SoC Products Group also offers a variety of enhanced qualification and lot acceptance screening procedures. Contact your local SoC Products Group sales office for additional reliability information. R ev i si o n 1 0 6- 13 Datasheet Information 6- 14 R ev i sio n 1 0 Microsemi Corporation (NASDAQ: MSCC) offers a comprehensive portfolio of semiconductor solutions for: aerospace, defense and security; enterprise and communications; and industrial and alternative energy markets. Products include high-performance, high-reliability analog and RF devices, mixed signal and RF integrated circuits, customizable SoCs, FPGAs, and complete subsystems. Microsemi is headquartered in Aliso Viejo, Calif. Learn more at www.microsemi.com. Microsemi Corporate Headquarters One Enterprise, Aliso Viejo CA 92656 USA Within the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 © 2012 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. 51700112-10/01.13 Datasheet Information 6- 16 R ev i sio n 1 0