MITSUBISHI Pch POWER MOSFET FY3ABJ-03 HIGH-SPEED SWITCHING USE FY3ABJ-03 OUTLINE DRAWING ➄ ➀ ➃ 6.0 4.4 ➇ Dimensions in mm 1.8 MAX. 5.0 0.4 1.27 ➁➂ ➃ ● 4V DRIVE ● VDSS ............................................................................... –30V ● rDS (ON) (MAX) ............................................................. 70mΩ ● ID ......................................................................................... –3A ➁ ➂ SOURCE ➃ GATE ➄ ➅ ➆ ➇ DRAIN ➀ No-contact ➄➅➆➇ SOP-8 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter VDSS VGSS Drain-source voltage Gate-source voltage ID IDM IDA Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) IS ISM PD Tch Tstg Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature — Weight Ratings Unit VGS = 0V VDS = 0V Conditions –30 ±20 V V L = 10µH –3 –21 –3 A A A –1.7 –6.8 1.8 –55 ~ +150 –55 ~ +150 A A W °C °C 0.07 g Typical value Sep.1998 MITSUBISHI Pch POWER MOSFET FY3ABJ-03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage IGSS IDSS VGS (th) rDS (ON) rDS (ON) Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Limits Test conditions ID = –1mA, VDS = 0V VGS = ±20V, VDS = 0V VDS = –30V, VGS = 0V ID = –1mA, VDS = –10V ID = –3A, VGS = –10V ID = –1.5A, VGS = –4V ID = –3A, VGS = –10V ID = –3A, VDS = –10V Typ. — — — Max. — ±0.1 –0.1 –1.5 — — — –2.0 57 102 –0.17 –2.5 70 160 –0.21 V mΩ mΩ V — — — — 8 2100 340 195 — — — — S pF pF pF — — — — 20 20 135 50 — — — — ns ns ns ns — –0.77 –1.20 V — — — 70 69.4 — °C/W ns VDS = –10V, VGS = 0V, f = 1MHz VDD = –15V, ID = –1.5A, VGS = –10V, RGEN = RGS = 50Ω Turn-off delay time Fall time Source-drain voltage IS = –1.7A, VGS = 0V Channel to ambient Thermal resistance Reverse recovery time Unit Min. –30 — — IS = –1.7A, dis/dt = 50A/µs V µA mA PERFORMANCE CURVES DRAIN CURRENT ID (A) 2.0 1.5 1.0 0.5 0 0 50 100 –7 –5 –3 –2 10ms –100 –7 –5 –3 –2 100ms Tc = 25°C Single Pulse –10–1 –7 –5 –3 –2 DC –10–2 –2 –10 –2 –3 –5–7–10–1–2 –3 –5–7 –100 –2 –3 –5–7 –101 –2 –3 –5–7 –102 200 OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS = –10V –6V –30 –5V –20 –4V –10 –1.0 –2.0 –3.0 –20 –8V Tc = 25°C Pulse Test –40 0 tw = 1ms –101 DRAIN-SOURCE VOLTAGE VDS (V) PD = 1.8W DRAIN CURRENT ID (A) 150 –7 –5 –3 –2 CASE TEMPERATURE TC (°C) –50 0 MAXIMUM SAFE OPERATING AREA –102 –4.0 –5.0 DRAIN-SOURCE VOLTAGE VDS (V) VGS = –10V –8V –6V –5V PD = 1.8W DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 2.5 –16 –4V –12 –8 Tc = 25°C Pulse Test –3V –4 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 DRAIN-SOURCE VOLTAGE VDS (V) Sep.1998 MITSUBISHI Pch POWER MOSFET FY3ABJ-03 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 200 Tc = 25°C Pulse Test –4.0 –3.0 –2.0 ID = –24A –1.0 –6A 0 –10A DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) –5.0 –3A 0 –2 –4 –6 –8 VGS = –4V 160 120 80 –10V 40 0 –10–1 –2 –3 –5–7 –100 –2 –3 –5–7 –101 –2 –3 –5 –10 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 102 –20 Tc = 25°C VDS = –10V Pulse Test –16 –12 –8 –4 VDS = 10V Pulse Test 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) Tc = 25°C Pulse Test 3 2 Tc =25°C 75°C 125°C 101 7 5 VDS = –10V Pulse Test 3 2 0 3 0 –2 –4 –6 100 –5 –7–100 –10 –8 CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 3 2 Ciss Coss Crss 102 3 2 VGS = 0V f = 1MHZ Tch = 25°C –5–7–10–1 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 7 5 7 5 –2 –3 DRAIN CURRENT ID (A) 103 2 –5 –7–101 GATE-SOURCE VOLTAGE VGS (V) 2 3 –2 –3 –5 td(off) 100 7 5 tf 3 2 tr td(on) 10–1 Tch = 25°C VDD = –15V VGS = –10V RGEN = RGS = 50Ω 7 5 3 2 10–2 0 –10 –2 –3 –5 –7 –101 –2 –3 –5 DRAIN CURRENT ID (A) Sep.1998 MITSUBISHI Pch POWER MOSFET FY3ABJ-03 HIGH-SPEED SWITCHING USE –10 SOURCE CURRENT IS (A) VDS = –10V –6 –20V –25V –4 –2 0 8 16 24 32 –8 –4 –0.4 –0.8 –1.2 –1.6 –2.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) –2.0 VGS = –10V ID = –3A Pulse Test 100 7 5 4 3 2 –50 0 50 100 VDS = –10V ID = –1mA –1.6 –1.2 –0.8 –0.4 0 150 CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = –1mA 1.2 1.0 0.8 0.6 0.4 0 GATE CHARGE Qg (nC) 2 10–1 Tc = 25°C 75°C 125°C –12 0 101 7 5 4 3 VGS = 0V Pulse Test –16 40 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) –20 Tch = 25°C Pulse Test ID = –3A –8 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch –a) (°C/ W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 D = 1.0 3 0.5 2 101 0.2 7 5 0.1 3 0.05 2 PDM 100 7 5 3 2 10–1 0.02 0.01 Single Pulse 7 5 3 2 tw T D= tw T 10–2 10–4 2 3 5710–3 2 3 5710–2 2 3 5710–1 2 3 57 100 2 3 57 101 2 3 57 102 2 3 57 103 PULSE WIDTH tw (s) Sep.1998