Infineon IPP65R065C7 Metal oxide semiconductor field effect transistor Datasheet

MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™C7
650VCoolMOS™C7PowerTransistor
IPP65R065C7
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket
650VCoolMOS™C7PowerTransistor
IPP65R065C7
1Description
TO-220
tab
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.
CoolMOS™C7seriescombinestheexperienceoftheleadingSJ
MOSFETsupplierwithhighclassinnovation.Theproductportfolio
providesallbenefitsoffastswitchingsuperjunctionMOSFETsoffering
betterefficiency,reducedgatecharge,easyimplementationand
outstandingreliability.
Features
•IncreasedMOSFETdv/dtruggedness
•BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
•BestinclassRDS(on)/package
•Easytouse/drive
•Pb-freeplating,halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
Drain
Pin 2, tab
Gate
Pin 1
Source
Pin 3
Benefits
•Enablinghighersystemefficiency
•Enablinghigherfrequency/increasedpowerdensitysolutions
•Systemcost/sizesavingsduetoreducedcoolingrequirements
•Highersystemreliabilityduetoloweroperatingtemperatures
Applications
PFCstagesandhardswitchingPWMstagesfore.g.Computing,Server,
Telecom,UPSandSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
700
V
RDS(on),max
65
mΩ
Qg.typ
64
nC
ID,pulse
145
A
Eoss@400V
8
µJ
Body diode di/dt
60
A/µs
Type/OrderingCode
Package
Marking
IPP65R065C7
PG-TO 220
65C7065
Final Data Sheet
2
RelatedLinks
see Appendix A
Rev.2.0,2013-10-11
650VCoolMOS™C7PowerTransistor
IPP65R065C7
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
3
Rev.2.0,2013-10-11
650VCoolMOS™C7PowerTransistor
IPP65R065C7
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current 1)
Values
Unit
Note/TestCondition
33
21
A
TC=25°C
TC=100°C
-
145
A
TC=25°C
-
-
171
mJ
ID=10.2A; VDD=50V; see table 10
EAR
-
-
0.85
mJ
ID=10.2A; VDD=50V; see table 10
Avalanche current, single pulse
IAS
-
-
10.2
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
100
V/ns
VDS=0...400V
Gate source voltage (static)
VGS
-20
-
20
V
static;
Gate source voltage (dynamic)
VGS
-30
-
30
V
AC (f>1 Hz)
Power dissipation
Ptot
-
-
171
W
TC=25°C
Storage temperature
Tstg
-55
-
150
°C
-
Operating junction temperature
Tj
-55
-
150
°C
-
Mounting torque
-
-
-
60
Ncm M3 and M3.5 screws
Continuous diode forward current
IS
-
-
33
A
TC=25°C
Diode pulse current2)
IS,pulse
-
-
145
A
TC=25°C
Reverse diode dv/dt 3)
dv/dt
-
-
1.5
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C
see table 8
Maximum diode commutation speed
dif/dt
-
-
60
A/µs
VDS=0...400V,ISD<=IS,Tj=25°C
see table 8
Insulation withstand voltage
VISO
-
-
n.a.
V
Vrms,TC=25°C,t=1min
Min.
Typ.
Max.
ID
-
-
Pulsed drain current 2)
ID,pulse
-
Avalanche energy, single pulse
EAS
Avalanche energy, repetitive
1)
Limited by Tj max.
Pulse width tp limited by Tj,max
3)
IdenticallowsideandhighsideswitchwithidenticalRG
2)
Final Data Sheet
4
Rev.2.0,2013-10-11
650VCoolMOS™C7PowerTransistor
IPP65R065C7
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Values
Unit
Note/TestCondition
Min.
Typ.
Max.
RthJC
-
-
0.73
°C/W -
Thermal resistance, junction - ambient
RthJA
-
-
62
°C/W leaded
Thermal resistance, junction - ambient
for SMD version
RthJA
-
-
-
°C/W n.a.
Soldering temperature, wavesoldering
only allowed at leads
Tsold
-
-
260
°C
Final Data Sheet
5
1.6mm (0.063 in.) from case for
10s
Rev.2.0,2013-10-11
650VCoolMOS™C7PowerTransistor
IPP65R065C7
4Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
3.5
4
V
VDS=VGS,ID=0.85mA
-
15
1
-
µA
VDS=650,VGS=0V,Tj=25°C
VDS=650,VGS=0V,Tj=150°C
IGSS
-
-
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
0.058
0.138
0.065
-
Ω
VGS=10V,ID=17.1A,Tj=25°C
VGS=10V,ID=17.1A,Tj=150°C
Gate resistance
RG
-
0.85
-
Ω
f=1MHz,opendrain
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
650
-
Gate threshold voltage
V(GS)th
3
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
3020
-
pF
VGS=0V,VDS=400V,f=250kHz
Output capacitance
Coss
-
48
-
pF
VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
related 1)
Co(er)
-
100
-
pF
VGS=0V,VDS=0...400V
Effective output capacitance, time related
Co(tr)
-
1110
-
pF
ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time
td(on)
-
17
-
ns
VDD=400V,VGS=13V,ID=17.1A,
RG=5.3Ω;seetable9
Rise time
tr
-
14
-
ns
VDD=400V,VGS=13V,ID=17.1A,
RG=5.3Ω;seetable9
Turn-off delay time
td(off)
-
72
-
ns
VDD=400V,VGS=13V,ID=17.1A,
RG=5.3Ω;seetable9
Fall time
tf
-
7
-
ns
VDD=400V,VGS=13V,ID=17.1A,
RG=5.3Ω;seetable9
Unit
Note/TestCondition
2)
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
16
-
nC
VDD=400V,ID=17.1A,VGS=0to10V
Gate to drain charge
Qgd
-
21
-
nC
VDD=400V,ID=17.1A,VGS=0to10V
Gate charge total
Qg
-
64
-
nC
VDD=400V,ID=17.1A,VGS=0to10V
Gate plateau voltage
Vplateau
-
5.4
-
V
VDD=400V,ID=17.1A,VGS=0to10V
1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
2)
Final Data Sheet
6
Rev.2.0,2013-10-11
650VCoolMOS™C7PowerTransistor
IPP65R065C7
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,IF=17.1A,Tj=25°C
800
-
ns
VR=400V,IF=33A,diF/dt=60A/µs;
see table 8
-
10
-
µC
VR=400V,IF=33A,diF/dt=60A/µs;
see table 8
-
30
-
A
VR=400V,IF=33A,diF/dt=60A/µs;
see table 8
Min.
Typ.
Max.
VSD
-
0.9
Reverse recovery time
trr
-
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Final Data Sheet
7
Rev.2.0,2013-10-11
650VCoolMOS™C7PowerTransistor
IPP65R065C7
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Safeoperatingarea
103
180
160
100 µs
102
1 µs
10 ms
140
DC
101
120
100
ID[A]
Ptot[W]
10 µs
1 ms
80
100
10-1
60
40
10-2
20
0
0
25
50
75
100
125
10-3
150
100
101
TC[°C]
102
103
VDS[V]
Ptot=f(TC)
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
100
10
100 µs
1 ms
102
10 µs
1 µs
0.5
10 ms
DC
0.2
ZthJC[K/W]
ID[A]
101
100
10-1
0.1
0.05
-1
10
0.02
0.01
10-2
10-3
single pulse
100
101
102
103
10-2
10-5
10-4
VDS[V]
10-2
10-1
tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tP);parameter:D=tp/T
8
Rev.2.0,2013-10-11
650VCoolMOS™C7PowerTransistor
IPP65R065C7
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.outputcharacteristics
160
100
20 V
10 V
140
20 V
90
10 V
80
7V
8V
8V
120
70
7V
6V
60
ID[A]
ID[A]
100
80
50
40
60
5.5 V
30
6V
40
5.5 V
20
5V
0
4.5 V
0
5
10
15
20
5V
10
4.5 V
0
20
0
5
10
VDS[V]
15
ID=f(VDS);Tj=25°C;parameter:VGS
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
Diagram8:Drain-sourceon-stateresistance
0.24
5.5 V
20
VDS[V]
6V
0.16
6.5 V
7V
20 V
0.22
0.14
0.20
0.12
0.18
0.10
RDS(on)[Ω]
RDS(on)[Ω]
10 V
0.16
98%
0.08
typ
0.14
0.06
0.12
0.04
0.10
0
20
40
60
80
100
0.02
-50
-25
0
25
ID[A]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Final Data Sheet
50
75
100
125
150
Tj[°C]
RDS(on)=f(Tj);ID=17.1A;VGS=10V
9
Rev.2.0,2013-10-11
650VCoolMOS™C7PowerTransistor
IPP65R065C7
Diagram9:Typ.transfercharacteristics
Diagram10:Typ.gatecharge
160
12
11
140
120 V
25 °C
400 V
10
120
9
8
100
80
VGS[V]
ID[A]
7
150 °C
6
5
60
4
40
3
2
20
1
0
0
2
4
6
8
10
0
12
0
20
40
VGS[V]
60
80
Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj
VGS=f(Qgate);ID=17.1Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
Diagram12:Avalancheenergy
2
10
180
160
125 °C
140
25 °C
101
IF[A]
EAS[mJ]
120
100
100
80
60
40
20
10-1
0.0
0.5
1.0
1.5
0
25
50
75
VSD[V]
IF=f(VSD);parameter:Tj
Final Data Sheet
100
125
150
Tj[°C]
EAS=f(Tj);ID=10.2A;VDD=50V
10
Rev.2.0,2013-10-11
650VCoolMOS™C7PowerTransistor
IPP65R065C7
Diagram13:Drain-sourcebreakdownvoltage
Diagram14:Typ.capacitances
105
760
740
104
720
Ciss
700
C[pF]
VBR(DSS)[V]
103
680
660
Coss
102
640
620
101
Crss
600
580
-60
-20
20
60
100
140
180
100
0
100
200
Tj[°C]
300
400
500
VDS[V]
VBR(DSS)=f(Tj);ID=1mA
C=f(VDS);VGS=0V;f=250kHz
Diagram15:Typ.Cossstoredenergy
11
10
9
8
Eoss[µJ]
7
6
5
4
3
2
1
0
0
100
200
300
400
500
VDS[V]
Eoss=f(VDS)
Final Data Sheet
11
Rev.2.0,2013-10-11
650VCoolMOS™C7PowerTransistor
IPP65R065C7
6TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V ,I
Rg1
VDS( peak)
VDS
VDS
VDS
trr
IF
Rg 2
tF
tS
dIF / dt
QF
IF
t
dIrr / dt trr =tF +tS
Qrr = QF + QS
Irrm
Rg1 = Rg 2
IF
10 %Irrm
QS
Table9Switchingtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
VDS
VGS
VGS
10%
td(on)
td(off)
tr
ton
tf
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VD
VDS
VDS
Final Data Sheet
12
ID
VDS
Rev.2.0,2013-10-11
650VCoolMOS™C7PowerTransistor
IPP65R065C7
7PackageOutlines
Figure1OutlinePG-TO220,dimensionsinmm/inches
Final Data Sheet
13
Rev.2.0,2013-10-11
650VCoolMOS™C7PowerTransistor
IPP65R065C7
8AppendixA
Table11RelatedLinks
• IFXCoolMOSTMC7Webpage:www.infineon.com
• IFXCoolMOSTMC7applicationnote:www.infineon.com
• IFXCoolMOSTMC7simulationmodel:www.infineon.com
• IFXDesigntools:www.infineon.com
Final Data Sheet
14
Rev.2.0,2013-10-11
650VCoolMOS™C7PowerTransistor
IPP65R065C7
RevisionHistory
IPP65R065C7
Revision:2013-10-11,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2013-10-11
Release of final version
WeListentoYourComments
Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously
improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:
[email protected]
Edition2011-08-01
Publishedby
InfineonTechnologiesAG
81726München,Germany
©2011InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
15
Rev.2.0,2013-10-11
Similar pages