Vishay BYS10-45 Schottky barrier rectifier Datasheet

BYS10
Vishay Telefunken
Schottky Barrier Rectifier
Features
D
D
D
D
D
High efficiency
Low power losses
Very low switching losses
Low reverse current
High surge capability
15 811
Applications
Polarity protection
Low voltage, high frequency rectifiers
Absolute Maximum Ratings
Tj = 25_C
Parameter
Reverse voltage
g
=Repetitive peak reverse voltage
Peak forward surge current
Average forward current
Junction and storage
temperature range
Test Conditions
tp=10ms, half sinewave
Type
Symbol
Value
BYS10–25
VR
25
BYS10–35 =VRRM
35
BYS10–45
45
IFSM
30
IFAV
1.5
Tj=Tstg –55...+150
Unit
V
V
V
A
A
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction lead
TL=constant
Junction ambient mounted on epoxy–glass hard tissue
mounted on epoxy–glass hard tissue, 50mm2 35mm Cu
mounted on Al–oxid–ceramic (Al2O3), 50mm2 35mm Cu
Symbol
RthJL
RthJA
RthJA
RthJA
Value
25
150
125
100
Unit
K/W
K/W
K/W
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
Reverse current
Document Number 86013
Rev. 2, 24-Jun-98
Test Conditions
IF=1A
VR=VRRM
VR=VRRM, Tj=100°C
Type
Symbol
VF
IR
IR
Min
Typ
Max
500
500
10
Unit
mV
mA
mA
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BYS10
Vishay Telefunken
PR – Maximum Reverse Power Dissipation ( W )
Characteristics (Tj = 25_C unless otherwise specified)
BYS10-45
6
5
BYS10-35
4
RthJA=25K/W
3
BYS10-25
2
1
RthJA=100K/W
I FAV– Average Forward Current ( A )
7
RthJA=25K/W
1.2
100K/W
0.8
125K/W
0.4
150K/W
0
0
40
80
120
160
200
Tj – Junction Temperature ( °C )
0
40
80
120
160
200
Tamb – Ambient Temperature ( °C )
95 9713
Figure 4. Max. Average Forward Current vs.
Ambient Temperature
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
100
100
10
VR = VR RM
1
Tj = 150°C
I F – Forward Current ( A )
1000
10
1
Tj = 25°C
0.1
0.01
0.1
0
40
80
120
160
0
200
Tj – Junction Temperature ( °C )
95 9711
95 9714
0.4
0.8
1.2
1.6
2.0
VF – Forward Voltage ( V )
Figure 5. Max. Forward Current vs. Forward Voltage
Figure 2. Max. Reverse Current vs.
Junction Temperature
I FAV– Average Forward Current ( A )
VR = 0 V, Half Sinewave
1.6
0
95 9710
IR – Reverse Current ( mA )
2.0
2.0
VR = VR RM, Half Sinewave, RthJA=25K/W
1.6
1.2
BYS10-25
0.8
BYS10-35
0.4
BYS10-45
0
0
95 9712
40
80
120
160
200
Tamb – Ambient Temperature ( °C )
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
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2 (4)
Document Number 86013
Rev. 2, 24-Jun-98
BYS10
Vishay Telefunken
Dimensions in mm
14275
Document Number 86013
Rev. 2, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600
3 (4)
BYS10
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
4 (4)
Document Number 86013
Rev. 2, 24-Jun-98
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