BYV255V HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES n n n n n n SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED : Insulating voltage = 2500 VRMS Capacitance = 55 pF K2 A2 K1 A1 DESCRIPTION Dual rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in ISOTOPTM this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ISOTOP (Plastic) ABSOLUTE MAXIMUM RATINGS Symbol IF(RMS) Parameter RMS forward current Value Unit Per diode 150 A IF(AV) Average forward current δ = 0.5 Tc=110°C Per diode 100 A IFSM Surge non repetitive forward current tp=10ms sinusoidal Per diode 1600 A Tstg Tj Storage and junction temperature range - 40 to + 150 - 40 to + 150 °C °C Value Unit 200 V Symbol VRRM Parameter Repetitive peak reverse voltage ISOTOP is a trademark of STMicroelectronics. May 2000 - Ed : 2E 1/5 BYV255V THERMAL RESISTANCE Symbol Rth (j-c) Rth (c) Parameter Junction to case Value Unit Per diode 0.4 °C/W Total 0.25 °C/W 0.1 Coupling When the diodes 1 and 2 are used simultaneously : Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) ELECTRICAL CHARACTERISTICS (Per diode) STATIC CHARACTERISTICS Symbol IR * Test Conditions Tj = 25°C Min. Typ. VR = VRRM Tj = 100°C VF ** Max. Unit 100 µA 10 mA V Tj = 125°C IF = 100 A 0.85 Tj = 125°C IF = 200 A 1.00 Tj = 25°C IF = 200 A 1.15 Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 µs, duty cycle < 2 % RECOVERY CHARACTERISTICS Symbol trr Test Conditions Tj = 25°C Min. Typ. Max. Unit ns IF = 0.5A IR = 1A Irr = 0.25A 55 IF = 1A VR = 30V dIF/dt = -50A/µs 80 tfr Tj = 25°C IF = 1A VFR = 1.1 x VF tr = 5 ns 10 ns VFP Tj = 25°C IF = 1A tr = 5 ns 1.5 V TURN-OFF SWITCHING CHARACTERISTICS Symbol IRM 2/5 Test Conditions Tj = 100°C IF = 100A Lp 0.05µH Vcc 0.6 VRRM Min. Typ. dIF/dt = -200A/µs dIF/dt = -400A/µs 24 Max. Unit 16 A BYV255V Fig.1 : Average forward power dissipation versus average forward current. P F(av)(W) 120 110 100 90 80 70 60 50 40 30 20 10 0 0 Fig.2 : Peak current versus form factor. IM(A) 120 500 450 P=40W T 400 IM 350 P=70W =tp/T 300 tp 250 200 P=100W 150 100 P=20W 50 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig.3 : Forward voltage drop versus forward current (maximum values). Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. =1 =0.5 =0.2 =0.1 =0.05 T I F(av)(A) 20 40 60 =tp/T 80 tp 100 1.0 VFM(V) K 1.8 1.6 Zth(j-c) (tp. ) K = Rth(j-c) Tj=125 oC 1.4 =0 . 5 0.5 1.2 =0 . 2 1.0 =0 . 1 0.8 0.6 T 0.2 Single pulse 0.4 0.2 0.0 IFM(A) 1 10 100 1000 1.0E-03 Fig.5 : Non repetitive surge peak forward current versus overload duration. I M(A) 1000 900 800 700 600 500 400 300 IM 200 100 0 0.001 =t p/T tp(s) 0.1 1.0E-02 1.0E-01 Fig.6 : Average current versus temperature. (duty cycle : 0.5) 120 tp 1. 0E+0 0 ambient IF(av)(A) 100 Rth(j-a)=Rth(j-c) 80 60 Tc=25 oC =0.5 Tc=75 o C t =0.5 0.01 20 Tc=110 o C t(s) T 40 =tp/T 0.1 1 0 0 20 Tamb( o C) tp 40 60 80 100 120 140 160 3/5 BYV255V Fig.7 : Junction capacitance versus reverse voltage applied (Typical values). 800 Fig.8 : Recovery charges versus dIF/dt. C(pF) QRR(uC) 2 F=1Mhz Tj=25 oC 90%CONFIDENCE Tj=100 OC 750 IF=IF(av) 1 700 0.5 650 600 0.2 550 VR(V) 500 1 dIF/dt(A/us) 10 100 200 Fig.9 : Peak reverse current versus dIF/dt. 0.1 10 20 200 100 500 Fig.10 : Dynamic parameters versus junction temperature. IRM(A) 1.50 50 QRR;IRM[Tj]/QRR;IRM[Tj=100 o C TYPICAL VALUE S 90%CONFIDENCE IF=IF(av) 20 50 1.25 Tj=100 OC 1.00 10 IRM 0.75 5 QRR 0.50 0.25 2 Tj( o C) dIF/dt(A/us) 1 10 4/5 20 50 100 200 500 0.00 0 25 50 75 100 125 150 BYV255V PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS n n n n REF. Millimeters A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S Min. Max. 11.80 12.20 8.90 9.10 7.8 8.20 0.75 0.85 1.95 2.05 37.80 38.20 31.50 31.70 25.15 25.50 23.85 24.15 24.80 typ. 14.90 15.10 12.60 12.80 3.50 4.30 4.10 4.30 4.60 5.00 4.00 4.30 4.00 4.40 30.10 30.30 Inches Min. 0.465 0.350 0.307 0.030 0.077 1.488 1.240 0.990 0.939 0.976 0.587 0.496 0.138 0.161 0.181 0.157 0.157 1.185 Max. 0.480 0.358 0.323 0.033 0.081 1.504 1.248 1.004 0.951 typ. 0.594 0.504 0.169 0.169 0.197 0.69 0.173 1.193 Marking : Type number Cooling method : C Weight : 27 g Epoxy meets UL94, V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. 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