AOT5N100/AOTF5N100 1000V,4A N-Channel MOSFET General Description Product Summary The AOT5N100 & AOTF5N100 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 1100@150℃ 4A RDS(ON) (at VGS=10V) < 4.2Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT5N100L & AOTF5N100L Top View TO-220 TO-220F D G S AOT5N100 G D AOTF5N100 G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOT5N100 AOTF5N100 Symbol Drain-Source Voltage VDS 1000 Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C ±30 V 4 ID Units V 4* 2.5 2.5* A Pulsed Drain Current C IDM Avalanche Current C IAR 2.8 A Repetitive avalanche energy C EAR 117 mJ Single pulsed avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D EAS dv/dt 235 5 mJ V/ns W 15 PD 42 0.3 TJ, TSTG -55 to 150 W/ oC °C 300 °C TL Symbol RθJA RθCS AOT5N100 65 AOTF5N100 65 Units °C/W 0.5 0.64 -3 °C/W °C/W Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev1: Aug 2012 195 1.6 www.aosmd.com Page 1 of 6 AOT5N100/AOTF5N100 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 1000 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 1100 V ID=250µA, VGS=0V 1.04 V/ oC VDS=1000V, VGS=0V 1 VDS=800V, TJ=125°C 10 µA IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2.5A gFS Forward Transconductance VDS=40V, ID=2.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 4 A ISM Maximum Body-Diode Pulsed Current 15 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge ±100 3.3 3.9 4.5 nΑ V 3.5 4.2 Ω 1 V 5 S 0.73 750 950 1150 pF 40 62 85 pF 3.5 6 9 pF 2 4.3 6.5 Ω 19 23 nC 15 VGS=10V, VDS=800V, ID=5A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=5A,dI/dt=100A/µs,VDS=100V 350 450 550 Qrr Body Diode Reverse Recovery Charge IF=5A,dI/dt=100A/µs,VDS=100V 4.2 5.5 6.8 Body Diode Reverse Recovery Time VGS=10V, VDS=500V, ID=5A, RG=25Ω 4.6 nC 6.5 nC 27 ns 40 ns 50 ns 33 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=2.8A, VDD=150V, RG=25Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev1: Aug 2012 www.aosmd.com Page 2 of 6 AOT5N100/AOTF5N100 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 7.5 VDS=40V 10V 6.0 -55°C 10 4.5 ID(A) ID (A) 6V 3.0 125°C 5.5V 1 1.5 25°C VGS=5V 0.0 0.1 0 5 10 15 20 25 30 2 4 6 8 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 3 Normalized On-Resistance 10.0 8.0 RDS(ON) (Ω Ω) 10 6.0 VGS=10V 4.0 2.0 2.5 VGS=10V ID=2.5A 2 1.5 1 0.5 0.0 0 0 2 4 6 8 10 12 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -100 -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.2 1E+02 40 1E+00 IS (A) BVDSS (Normalized) 1E+01 1.1 1 125°C 1E-01 25°C 1E-02 0.9 1E-03 1E-04 0.8 -100 50 100 150 200 TJ (°C) Figure 5:Break Down vs. Junction Temparature Rev1: Aug 2012 -50 0 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOT5N100/AOTF5N100 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 15 VDS=800V ID=5A Ciss 1000 Capacitance (pF) VGS (Volts) 12 9 6 Coss 100 Crss 10 3 0 1 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 30 0.1 100 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 100 10µs RDS(ON) limited 10 100µs 1 ID (Amps) 10 ID (Amps) 1 1ms DC 10ms 0.1 10µs RDS(ON) limited 100µs 1 1ms DC 0.1 TJ(Max)=150°C TC=25°C 10ms 0.1s 1s TJ(Max)=150°C TC=25°C 0.01 0.01 1 10 100 1000 10000 1 10 100 1000 VDS (Volts) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT5N100 (Note F) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF5N100 (Note F) 10000 Current rating ID(A) 5 4 3 2 1 0 0 Rev1: Aug 2012 25 50 75 100 125 TCASE (°C) Figure 11: Current De-rating (Note B) 150 www.aosmd.com Page 4 of 6 AOT5N100/AOTF5N100 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.64°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Single Pulse 0.01 Ton T 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance for AOT5N100 (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse T 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF5N100 (Note F) Rev1: Aug 2012 www.aosmd.com Page 5 of 6 AOT5N100/AOTF5N100 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev1: Aug 2012 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com Page 6 of 6