AN11010 Single stage Ku band LNA using BFU730F Rev. 1.0 — 11 January 2011 Application note Document information Info Content Keywords BFU730F, LNA, Ku band, LNB Abstract The document provides circuit, layout, BOM and performance information on Ku band LNA equipped with NXP’s BFU730F wide band transistor. AN11010 NXP Semiconductors Ku band LNA using BFU730F Revision history Rev Date Description 1.0 Initial document 20110111 Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] AN11010 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 11 January 2011 © NXP B.V. 2010. All rights reserved. 2 of 20 AN11010 NXP Semiconductors Ku band LNA using BFU730F 1. Introduction BFU730F is a discrete HBT produced in NXP’s SiGeC QuBIC4x BiCmos process. SiGeC is a normal silicon germanium process with the addition of Carbon in the base layer of the NPN transistor. The presence of carbon in the base layer suppresses the boron diffusion during wafer processing. This allows steeper and narrower SiGe HBT base and a heavier doped base. As a result, lower base resistance, lower noise and higher cut off frequency can be achieved. 2. Requirements for Ku band LNA The typical application for a Ku band LNA consists of amplification stage in the MW preamplifier chain of a satellite LNB. The noise figure requirements for LNBs may vary from standard to standard, however most of them will set a figure of: NFLNB ≤ 1.2dB BFU730F typical values for the minimum noise figure and maximum stable gain at Ku band frequency of 12GHz and bias of 2V / 10mA are: NFmin = 1.1dB and Gmax = 12.5dB This recommends the device as an alternative solution to replace pHemts in Ku band LNA applications. IF the target spec for the BFU730F LNA noise and gain is: NF= 1.4dB and Gain = 11.5dB The LNB system performance is as it shows up in Table 1: Table 1. BFU730F vs pHemt NF and Gain performance comparison Preamplifier 2 stage 3 stage st 1 stage NF/Gain (dB) nd 2 stage NF/Gain (dB) rd 3 stage NF/Gain (dB) Mixer stage NF/Gain (dB) LNB NF/Gain (dB) pHemt 0.8 / 12 pHemt 1 / 12 N/U active 8/2 0.93 / 26 pHemt 0.8 / 12 BFU730F 1.4 / 11.5 N/U active 8/2 0.97 / 25.5 pHemt 0.8 / 12 pHemt 1 / 12 pHemt 1 / 12 diode 12 / -12 0.88 / 24 pHemt 0.8 / 12 pHemt 1 / 12 BFU730F 1.4 / 11.5 diode 12 / -12 0.88 / 23.5 pHemt 0.8 / 12 BFU730F 1.4 / 11.5 BFU730F 1.4 / 11.5 diode 12 / -12 0.91 / 23 The performance of the stand-alone BFU730F amplifier is slightly worse compare to the pHemt one, however in an LNB chain it gives almost no performance change when used as LNA3, or minor acceptable degradation when used as LNA2. AN11010 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 11 January 2011 © NXP B.V. 2010. All rights reserved. 3 of 20 AN11010 NXP Semiconductors Ku band LNA using BFU730F 3. Design The Ku band LNA consists of one stage BFU730F amplifier. It is aimed to replace more costly pHemt transistors in the second and / or third stage of the LNB preamplifier. These stages have to compensate the higher noise of the following mixer stage, thus their gain has to be as high as possible. The driving designs criteria for the LNA is the maximization of its gain. Secondly the noise figure has to be as good as possible, with a very small compromise on gain. Due to the gain criteria, the input and output match are also optimized. Stability wise the LNA has to be unconditionally stable over very broad frequency range. In terms of linearity, the system analysis does not impose stringent requirements. The design has been conducted using Agilent’s Advanced Design System (ADS). The 2D EM Momentum tool has been used to design the microwave section and the PCB. The linear and harmonic balanced circuit tools have been used to simulate the gain, noise, match, stability and linearity performances of the LNA. 3.1 BFU730F Ku LNA - ADS simulation circuit Fig 1. AN11010 Application note ADS simulation circuit for BFU730F Ku band LNA All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 11 January 2011 © NXP B.V. 2010. All rights reserved. 4 of 20 AN11010 NXP Semiconductors Ku band LNA using BFU730F 3.2 BFU730F Ku LNA - ADS Gain and match simulation results Fig 2. ADS Gain and match simulation results for BFU730F Ku band LNA 3.3 BFU730F Ku LNA - ADS NF simulation results Fig 3. AN11010 Application note ADS Noise Figure simulation results for Ku band LNA All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 11 January 2011 © NXP B.V. 2010. All rights reserved. 5 of 20 AN11010 NXP Semiconductors Ku band LNA using BFU730F 3.4 BFU730F Ku band LNA - ADS stability simulation results As K≥1 and Mu≥1, the LNA is unconditionally stable for the whole frequency band Fig 4. ADS stability simulation results for Ku band LNA 3.5 BFU730F Ku band LNA - ADS linearity simulation results OIP3 = Pf1+(Pf1-P2f1_f2)/2 = -0.4dBm + (-0.4 + 24.2)/2dB = 11.5dBm IIO3 = OIP3 – Gain = 11.5dBm – 10.2dB = 1.3dBm Fig 5. AN11010 Application note ADS linearity simulation results for Ku band LNA All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 11 January 2011 © NXP B.V. 2010. All rights reserved. 6 of 20 AN11010 NXP Semiconductors Ku band LNA using BFU730F 4. Implementation 4.1 Schematic Fig 6. AN11010 Application note Schematic for BFU730F Ku band LNA EvB All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 11 January 2011 © NXP B.V. 2010. All rights reserved. 7 of 20 AN11010 NXP Semiconductors Ku band LNA using BFU730F 4.2 Layout and assembly Fig 7. Table 2. Layout and assembly information for BFU730F Ku band LNA EvB Bill of materials Designator Description Size Q1 2X2mm BFU730F PCB C1, C6 AN11010 Application note Value Type Note NXP Semiconductors HBT Murata GRM1555C1HR10BA01 Input match 30X30mm Capacitor 0402 2X 0.1pF (0.2pF) GRM1555C1HR20BA01 C2, C3 Capacitor 0402 220pF Decoupling C4 Capacitor 0402 47nF Decoupling R1 Resistor 0402 47R Stability R2 Resistor 0402 10R Stability R3 Resistor 0402 27k Bias R4 Resistor 0402 300R Bias X1, X2 SMA RF connector Giga Lane PSF-S01 RF connector X3 DC connector Molex, PCB header 2way Bias All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 11 January 2011 © NXP B.V. 2010. All rights reserved. 8 of 20 AN11010 NXP Semiconductors Ku band LNA using BFU730F 4.3 Printed Circuit Board details The PCB material used for this LNA Evaluation Board is Rogers RO4003. The PC board consists of: 0.35um top metal layer, 0.5mm thickness low loss dielectric layer with εR = 3.38 and TanD=0.0024 and 0.35um bottom metal layer 4.4 LNA view Fig 8. AN11010 Application note BFU730F Ku LNA EvB All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 11 January 2011 © NXP B.V. 2010. All rights reserved. 9 of 20 AN11010 NXP Semiconductors Ku band LNA using BFU730F 4.5 Measurement results 4.5.1 Gain and match – typical values (1) No gain correction has been applied / see § 5.3 to apply correction (2) Blue – S11, red – S22 Fig 9. BFU730F Ku band LNA – Gain and match measurement plots 4.5.2 NF and Gain – typical values (1) NF and Gain correction applied / see § 5.3 for value Fig 10. BFU730F Ku band LNA – NF and Gain measurement plots AN11010 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 11 January 2011 © NXP B.V. 2010. All rights reserved. 10 of 20 AN11010 NXP Semiconductors Ku band LNA using BFU730F 4.5.3 Linearity / OIP3 – typical values OIP3 = Pf1+(Pf1-P2f1_f2)/2 = 4.2dBm + (4.2 + 30)/2dB = 21.3dBm IIO3 = OIP3 – Gain = 21.3dBm – 11dB = 10.3dBm Fig 11. BFU730F Ku band LNA – Linearity measurement plot 4.5.4 Gain, NF, Current vs temperature BFU730F Ku LNA exhibits less than 1dB gain variation for temperature varying in the range of: -40ºC to +85ºC Table 3. Gain / NF vs Temp [1] BFU730F EvB4 tested for Gain and NF variation over temperature [1] AN11010 Application note Temperature (ºC) Icc (mA) NF (dB) Gain (dB) +25 11.6 1.45 10.7 +50 11.4 1.6 10.65 +70 11.1 1.75 10.6 +85 11.0 1.8 10.55 -10 11.8 1.2 11.2 -25 11.9 1.15 11.2 -40 12 1.1 11.25 Measurements have been focused on relative variation of the Gain and NF vs. temperature, however the absolute numbers might not be accurate. NF and Gain plots are available by request. All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 11 January 2011 © NXP B.V. 2010. All rights reserved. 11 of 20 AN11010 NXP Semiconductors Ku band LNA using BFU730F 4.5.5 Summary Measurements results averaged over nine EvBs are presented in Table 4 Table 4. Typical results measured on the BFU730F Ku band LNA Evaluation Boards Operating frequency is f=11.5GHz unless otherwise specified; Temp = 25 °C Parameter Symbol Min Typ Max Unit Supply Voltage VCC 4.75 5 5.25 V Supply Current ICC 10.8 11.5 12.1 mA Power gain Application note 10.55 dB 11.25GHz 10.9 dB 11.15 dB 12.25GHz 11 dB 12.75GHz 10.4 dB 10.75GHz 1.4 dB 11.25GHz 1.25 dB 1.2 dB 12.25GHz 1.2 dB 12.75GHz 1.35 dB 11.75GHz Noise Figure AN11010 10.75GHz 11.75GHz Gp NF [2] [3] [4] [5] Input Return Loss RLin 12 dB Output Return Loss RLout 12 dB Input 1dB Gain Compression Pi1dB 0.5 dBm Input third order intercept point IP3i 10 dBm [2] No gain correction has been applied. To apply gain correction see § 5.3 [3] Average Gain = 10.85dB [4] NF correction applied, see § 5.3 [5] Average NF = 1.3dB All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 11 January 2011 © NXP B.V. 2010. All rights reserved. 12 of 20 AN11010 NXP Semiconductors Ku band LNA using BFU730F 5. NF and Gain measurement corrections There are two types of errors and losses that have been taken into account to correct the NF and Gain measurement results: (1) Own system error for NF measurement and (2) insertion losses accounted to RF IN and RF OUT connectors, microstrip feed lines and the DC block used at the output of the LNA in NF measurements. 5.1 NF measurement system error A Miteq professional amplifier, rated as NF=1dB, Gain=24dB, has been used as reference for NF measurement system correction. Its manufacturer data is in Fig 12: Fig 12. Miteq amp 062 Miteq 062 amplifier measured with the NF setup used to qualify the BFU730F Ku band LNA has the NF performances listed in Fig 13. The system correction factor, NFsys, is the difference between the measured NF and the 1dB reference value from the catalog (2) NFsys= NFtable13 – 1dB represents the NF system correction factor: average value = 0.5dB Fig 13. Miteq 062 amplifier NF and Gain AN11010 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 11 January 2011 © NXP B.V. 2010. All rights reserved. 13 of 20 AN11010 NXP Semiconductors Ku band LNA using BFU730F 5.2 Insertion losses The losses that have to be taken into account are: (1) RF connectors and micro strip lines for Gain-match measurement and RF connectors and microstrip lines plus output DC block for the NF-Gain measurement. Fig 14 and Fig 15 below plot the two losses: (3) RF_IL = 0.75dB represents the total on board loss of the LNA (RF connectors and 50Ω line) Fig 14. Insertion loss for 2 RF connector and 27mm uStrip line on Rogers4003 PCB (4) RF_IL_DC=0.95dB represents the on board loss + output DC block loss (5) DC block loss ≈ 0.2dB Fig 15. Insertion loss for a RO4003 27mm SMA_SMA thru + Agilent DC block AN11010 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 11 January 2011 © NXP B.V. 2010. All rights reserved. 14 of 20 AN11010 NXP Semiconductors Ku band LNA using BFU730F Fig 16 shows the on board loss spitted between the input and the output: (6) RF input loss = 0.15dB / RF output loss = 0.5dB Fig 16. Insertion loss distribution 5.3 Correction factors for Gain-match and NF-Gain measurements Table 5. Correction factors / values Measurement Correction Corrected for type on Gain-match on Network Analyzer NF-Gain on NF Analyzer AN11010 Application note Correction value Correction applied Gain RFin + RFout total loss RF_IL=RFin + RFout = 0.75dB N NF NF System error + RFin loss NFsys+RFin = 0.5dB+0.15dB ≈0.65dB Y Gain RFout loss + DC block loss Y RF_IL_DC –NFsys-RFin=0.95dB-0.65dB = 0.3dB All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 11 January 2011 © NXP B.V. 2010. All rights reserved. 15 of 20 AN11010 NXP Semiconductors Ku band LNA using BFU730F 6. Abbreviations / explanations Table 6. AN11010 Application note List of abbreviation within text Abbreviation Stands for LNA Low Noise Amplifier LNB Low Noise Block Ku band LNB LNB in the frequency band of 10.7 ~ 12.75GHz NF Noise Figure PCB Printed Circuit Board BOM Bill of materials ABS-S LNB LNB for China Satellite System MW Microwave EM Electromagnetic All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 11 January 2011 © NXP B.V. 2010. All rights reserved. 16 of 20 AN11010 NXP Semiconductors Ku band LNA using BFU730F 7. Legal information 7.1 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 7.2 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the AN11010 Application note customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Evaluation products — This product is provided on an “as is” and “with all faults” basis for evaluation purposes only. NXP Semiconductors, its affiliates and their suppliers expressly disclaim all warranties, whether express, implied or statutory, including but not limited to the implied warranties of noninfringement, merchantability and fitness for a particular purpose. The entire risk as to the quality, or arising out of the use or performance, of this product remains with customer. In no event shall NXP Semiconductors, its affiliates or their suppliers be liable to customer for any special, indirect, consequential, punitive or incidental damages (including without limitation damages for loss of business, business interruption, loss of use, loss of data or information, and the like) arising out the use of or inability to use the product, whether or not based on tort (including negligence), strict liability, breach of contract, breach of warranty or any other theory, even if advised of the possibility of such damages. Notwithstanding any damages that customer might incur for any reason whatsoever (including without limitation, all damages referenced above and all direct or general damages), the entire liability of NXP Semiconductors, its affiliates and their suppliers and customer’s exclusive remedy for all of the foregoing shall be limited to actual damages incurred by customer based on reasonable reliance up to the greater of the amount actually paid by customer for the product or five dollars (US$5.00). The foregoing limitations, exclusions and disclaimers shall apply to the maximum extent permitted by applicable law, even if any remedy fails of its essential purpose. 7.3 Trademarks Notice: All referenced brands, product names, service names and trademarks are property of their respective owners. <Name> — is a trademark of NXP B.V. All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 11 January 2011 © NXP B.V. 2010. All rights reserved. 17 of 20 AN11010 NXP Semiconductors Ku band LNA using BFU730F 8. List of figures Fig 1. Fig 2. Fig 3. Fig 4. Fig 5. Fig 6. Fig 7. Fig 8. Fig 9. Fig 10. Fig 11. Fig 12. Fig 13. Fig 14. Fig 15. Fig 16. ADS simulation circuit for BFU730F Ku band LNA ................................................................... 4 ADS Gain and match simulation results for BFU730F Ku band LNA .................................... 5 ADS Noise Figure simulation results for Ku band LNA ................................................................... 5 ADS stability simulation results for Ku band LNA .......................................................................... 6 ADS linearity simulation results for Ku band LNA .......................................................................... 6 Schematic for BFU730F Ku band LNA EvB ....... 7 Layout and assembly information for BFU730F Ku band LNA EvB ............................................. 8 BFU730F Ku LNA EvB ....................................... 9 BFU730F Ku band LNA – Gain and match measurement plots ......................................... 10 BFU730F Ku band LNA – NF and Gain measurement plots ......................................... 10 BFU730F Ku band LNA – Linearity measurement plot .................................................................. 11 Miteq amp 062 ................................................. 13 Miteq 062 amplifier NF and Gain...................... 13 Insertion loss for 2 RF connector and 27mm uStrip line on Rogers4003 PCB ...................... 14 Insertion loss for a RO4003 27mm SMA_SMA thru + Agilent DC block ................................... 14 Insertion loss distribution .................................. 15 AN11010 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 11 January 2011 © NXP B.V. 2010. All rights reserved. 18 of 20 AN11010 NXP Semiconductors Ku band LNA using BFU730F 9. List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. BFU730F vs pHemt NF and Gain performance comparison ....................................................... 3 Bill of materials.................................................. 8 Gain / NF vs Temp .......................................... 11 Typical results measured on the BFU730F Ku band LNA Evaluation Boards .......................... 12 Correction factors / values .............................. 15 List of abbreviation within text ......................... 16 AN11010 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 11 January 2011 © NXP B.V. 2010. All rights reserved. 19 of 20 AN11010 NXP Semiconductors Ku band LNA using BFU730F 10. Contents 1. 2. 3. 3.1 3.2 3.3 3.4 3.5 4. 4.1 4.2 4.3 4.4 4.5 4.5.1 4.5.2 4.5.3 4.5.4 4.5.5 5. 5.1 5.2 5.3 6. 7. 7.1 7.2 7.3 8. 9. 10. Introduction ......................................................... 3 Requirements for Ku band LNA ......................... 3 Design .................................................................. 4 BFU730F Ku LNA - ADS simulation circuit ............ 4 BFU730F Ku LNA - ADS Gain and match simulation results ............................................... 5 BFU730F Ku LNA - ADS NF simulation results ..... 5 BFU730F Ku band LNA - ADS stability simulation results ................................................................ 6 BFU730F Ku band LNA - ADS linearity simulation results ................................................................ 6 Implementation .................................................... 7 Schematic.............................................................. 7 Layout and assembly ............................................ 8 Printed Circuit Board details .................................. 9 LNA view ............................................................... 9 Measurement results ........................................... 10 Gain and match – typical values.......................... 10 NF and Gain – typical values............................... 10 Linearity / OIP3 – typical values .......................... 11 Gain, NF, Current vs temperature ....................... 11 Summary ............................................................. 12 NF and Gain measurement corrections .......... 13 NF measurement system error ............................ 13 Insertion losses ................................................... 14 Correction factors for Gain-match and NF-Gain measurements ................................................. 15 Abbreviations / explanations............................ 16 Legal information .............................................. 17 Definitions............................................................ 17 Disclaimers .......................................................... 17 Trademarks ......................................................... 17 List of figures..................................................... 18 List of tables ...................................................... 19 Contents ............................................................. 20 Please be aware that important notices concerning this document and the product(s) described herein, have been included in the section 'Legal information'. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 11 January 2011 Document identifier: AN11010