NTE274 (NPN) & NTE275 (PNP) Silicon Complementary Transistors Darlington Power Amplifier, Switch Description: The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, low–frequency switching and hammer driver applications. Features: D High DC Current Gain: hFE = 3000 Typ @ IC = 2A D Low Collector–Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A D Collector–Emitter Sustaining Voltage: VCEO(sus) = 80V Min D Monolithic Construction with Built–In Base–Emitter Shunt Resistors Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mA Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.286W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 80 – – V OFF Characteristics Collector–Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) IC = 50mA, IB = 0 ICEO VCE = 40V, IB = 0 – – 0.5 mA ICER VCE = 80V, VEB(off) = 1.5V – – 0.5 mA VCB = 80V, VEB(off) = 1.5V, TA = +150°C – – 5.0 mA VBE = 5V, IC = 0 – – 2.0 mA IEBO Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 3V, IC = 2A 750 – 18000 VCE = 3V, IC = 4A 100 – – IC = 2A, IB = 8mA – – 2.0 V IC = 4A, IB = 40mA – – 3.0 V ON Characteristics DC Current Gain hFE Collector–Emitter Saturation Voltage VCE(sat) Base–Emitter Saturation Voltage VBE(sat) IC = 4A, IB = 40mA – – 4.0 V Base–Emitter ON Voltage VBE(on) VCE = 3V, IC = 2A – – 2.8 V IC = 1.5A, VCE = 3V, f = 1MHz 4.0 – – VCB = 10V, IE = 0, f = 0.1MHz – – 120 pF – – 200 pF 300 – – Dynamic Characteristics Magnitude of Common Emitter Small–Signal Short–Circuit Forward Current Transfer Ratio |hfe| Output Capacitance NTE274 Cob NTE275 Small–Signal Current Gain hfe IC = 1.5A, VCE = 3V, f = 1kHz NTE274 C B .485 (12.3) Dia .295 (7.5) .062 (1.57) E .031 (0.78) Dia .960 (24.3) NTE275 .360 (9.14) Min Base .580 (14.7) .147 (3.75) Dia (2 Places) .200 (5.08) C .145 (3.7) R Max B Collector/Case E Emitter