IPD90N04S3-04 OptiMOS®-T Power-Transistor Product Summary V DS 40 V R DS(on),max 3.6 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD90N04S3-04 PG-TO252-3-11 QN0404 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Conditions T C=25°C, V GS=10V T C=100 °C, V GS=10 V2) Value 90 Unit A 90 Pulsed drain current2) I D,pulse T C=25 °C 360 Avalanche energy, single pulse E AS I D=90 A 260 mJ Gate source voltage V GS ±20 V Power dissipation P tot 136 W Operating and storage temperature T j, T stg -55 ... +175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 1.0 55/175/56 page 1 2007-05-03 IPD90N04S3-04 Parameter Symbol Values Conditions Unit min. typ. max. - - 1.1 minimal footprint - - 62 6 cm2 cooling area3) - - 40 Thermal characteristics2) Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 40 - - Gate threshold voltage V GS(th) V DS=V GS, I D=90 µA 2.1 3.0 4.0 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 °C - - 1 - - 100 V DS=40 V, V GS=0 V, T j=125 °C2) V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance RDS(on) V GS=10 V, I D=80 A - 2.9 3.6 mΩ Rev. 1.0 page 2 2007-05-03 IPD90N04S3-04 Parameter Symbol Values Conditions Unit min. typ. max. - 4000 5200 - 1100 1400 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 170 250 Turn-on delay time t d(on) - 20 - Rise time tr - 13 - Turn-off delay time t d(off) - 30 - Fall time tf - 10 - Gate to source charge Q gs - 23 30 Gate to drain charge Q gd - 15 26 Gate charge total Qg - 60 80 Gate plateau voltage V plateau - 5.6 - V - - 90 A - - 360 V GS=0 V, V DS=25 V, f =1 MHz V DD=20 V, V GS=10 V, I D=90 A, R G=3.5 Ω pF ns Gate Charge Characteristics2) V DD=32 V, I D=90 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0 V, I F=90 A, T j=25 °C - 0.95 1.3 V Reverse recovery time2) t rr V R=20 V, I F=I S, di F/dt =100 A/µs - 35 - ns Reverse recovery charge2) Q rr - 35 - nC T C=25 °C 1) Current is limited by bondwire; with an R thJC = 1.1K/W the chip is able to carry 144A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2007-05-03 IPD90N04S3-04 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 160 100 140 80 120 60 I D [A] P tot [W] 100 80 40 60 40 20 20 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 1 µs 10 µs 100 100 µs 100 0.5 I D [A] Z thJC [K/W] 1 ms 0.1 -1 10 0.05 0.01 10 10-2 single pulse 10-3 1 0.1 1 10 100 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.0 10-6 page 4 2007-05-03 IPD90N04S3-04 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 360 20 18 320 280 16 7V 14 R DS(on) [mΩ] 240 I D [A] 6V 5.5 V 10 V 200 6.5 V 160 6V 120 80 10 8 6 5.5 V 40 12 6.5 V 4 5V 7V 10 V 2 0 0 2 4 6 0 8 20 40 60 80 100 120 140 180 I D [A] V DS [V] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 80 A; V GS = 10 V parameter: T j 360 6 -55 °C 25 °C 320 280 5 R DS(on) [mΩ] I D [A] 240 175 °C 200 160 4 120 3 80 40 0 2 3 4 5 6 7 8 V GS [V] Rev. 1.0 2 -60 -20 20 60 100 T j [°C] page 5 2007-05-03 IPD90N04S3-04 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 4 3.5 Ciss V GS(th) [V] C [pF] 900 µA 3 90 µA Coss 103 2.5 2 1.5 Crss 102 1 -60 -20 20 60 100 140 0 180 5 10 15 20 25 30 V DS [V] T j [°C] 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: T j(start) 100 103 25 °C 150 °C 100 °C I F [A] I AV [A] 102 175 °C 10 25 °C 1 10 100 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] Rev. 1.0 1 10 100 1000 t AV [µs] page 6 2007-05-03 IPD90N04S3-04 13 Typical avalanche energy 14 Typ. drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 55 1200 1000 50 22.5 A V BR(DSS) [V] E AS [mJ] 800 600 45 40 45 A 400 35 200 90 A 30 0 25 75 125 -60 175 -20 T j [°C] 20 60 100 140 180 T j [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 90 A pulsed parameter: V DD 12 V GS 8V 10 Qg 32 V V GS [V] 8 6 V g s(th) 4 2 Q g (th) Q sw Q gs 0 0 25 50 Q gate Q gd 75 Q gate [nC] Rev. 1.0 page 7 2007-05-03 IPD90N04S3-04 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007 All Rights Reserved. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2007-05-03 IPD90N04S3-04 Revision History Version Rev. 1.0 Date Changes page 9 2007-05-03