DMN100 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • Mechanical Data • • Extremely Low On-Resistance: 170mΩ @ VGS = 4.5V High Drain Current: 1.1A Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits Lead Free By Design/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability ESD Protected Gate "Green" Device (Note 3) Case: SC-59 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) • • • • • • SC-59 Drain D Gate Gate Protection Diode TOP VIEW Source Equivalent Circuit Maximum Ratings S TOP VIEW @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current Thermal Characteristics Continuous Continuous Pulsed Symbol VDSS VGSS ID Value 30 ±20 1.1 4.0 Units V V Value 500 250 -55 to +150 Units mW K/W °C A @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: G Symbol Pd RθJA Tj, TSTG 1. Pulse width ≤ 300μs, duty cycle ≤ 2%. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMN100 Document number: DS30049 Rev. 7 - 2 1 of 4 www.diodes.com November 2007 © Diodes Incorporated DMN100 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ Tj = 25°C @ Tj = 125°C Symbol Min Typ Max Unit BVDSS 30 — V VGS = 0V, ID = 250μA IDSS — — — 1.0 10 ± 100 μA VDS = 24V, VGS = 0V nA VGS = ± 12V, VDS = 0V V VDS = 10V, ID = 1.0mA VGS = 4.5V, ID = 0.5A VGS = 10V, ID = 1.0A VDS = 10V, ID = 0.5A Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage IGSS — — VGS(th) 1.0 — Static Drain-Source On-Resistance RDS (ON) — — gFS 1.3 Ciss Coss Crss Qg Qgs Qgd Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Turn-On Rise Time Turn-Off Fall Time SOURCE-DRAIN RATINGS (BODY DIODE) Continuous Source Current Pulse Source Current Forward Voltage Reverse Recovery Time Notes: 4. Ω 2.4 3.0 0.170 0.240 ⎯ — — — — — — 150 90 30 5.5 0.8 1.3 — — — — — — pF pF pF nC nC nC tD(ON) tD(OFF) tr tf — — — — 10 25 15 45 — — — — ns ns ns ns IS ISM VSD trr — — — — — — — 35 0.54 4.0 1.2 — A A V ns VDS = 10V, VGS = 0V f = 1.0MHz VDS = 24V, ID = 1.0A, VGS = 10V VDD = 10V, ID = 0.5A, VGS = 5.0V, RGEN = 50Ω — — IF = 1.0A, VGS = 0V IF = 1.0A, di/dt = 50A/μs Pulse width ≤ 300μs, duty cycle ≤ 2%. 1.0 4.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.5 ID, DRAIN CURRENT (A) S Test Condition 3.0 2.5 2.0 1.5 1.0 VGS = 4.5V 0.1 VGS = 10V 0.5 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics DMN100 Document number: DS30049 Rev. 7 - 2 5 2 of 4 www.diodes.com 0.01 0 1 3 2 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs. Drain Current 4 November 2007 © Diodes Incorporated DMN100 4.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.30 0.25 0.20 0.15 0.10 0.05 0 -50 3.0 2.5 2.0 1.5 1.0 0.5 0 0 50 100 150 Tj, JUNCTION TEMPERATURE (°C) Fig. 3 On-Resistance vs. Junction Temperature Ordering Information 0 2 3 4 5 1 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage (Note 5) Part Number DMN100-7-F Notes: 3.5 Case SC-59 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. YM Marking Information M11 Date Code Key Year Code 2006 T 2007 U M11 = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September 2008 V 2009 W 2010 X 2011 Y 2012 Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Package Outline Dimensions A SC-59 Min Max 0.35 0.50 B 1.50 1.70 C 2.70 3.00 D 0.95 G 1.90 H 2.90 3.10 J 0.013 0.10 K 1.00 1.30 L 0.35 0.55 M 0.10 0.20 N 0.70 0.80 0° 8° α All Dimensions in mm Dim A TOP VIEW B C G H K M N J D DMN100 Document number: DS30049 Rev. 7 - 2 L 3 of 4 www.diodes.com November 2007 © Diodes Incorporated DMN100 Suggested Pad Layout Y Z G C X E Dimensions Value (in mm) Z 4.0 G 1.2 X 0.9 Y 1.4 C 2.6 E 0.95 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN100 Document number: DS30049 Rev. 7 - 2 4 of 4 www.diodes.com November 2007 © Diodes Incorporated