L6114
L6115
QUAD 100 V, DMOS SWITCH
..
..
..
OUTPUT VOLTAGE TO 100 V
0.7 Ω RDS(ON)
SUPPLY VOLTAGE UP TO 60 V
LOW INPUT CURRENT
TTL/CMOS COMPATIBLE INPUTS
HIGH SWITCHING FREQUENCY (200 KHz)
MULTIPOWER BCD TECHNOLOGY
Powerdip 14 + 3 + 3
DESCRIPTION
Realized with the Multipower-BCD mixed bipolar/CMOS/DMOS process, the L6114/15 monolithic
quad DMOS switch is designed for high current,
high voltage switching applications. Each of the four
switches is controlled by a logic input and all four are
controlled by a common enable input. All inputs are
TTL/CMOS compatible for direct connection to logic
circuits. Each source is available for the insertion of
the sense resistors in current control applications.
Two versions are available : the L6114 mounted in
a Powerdip 14+3+3 package and the L6115 in a 15lead Multiwatt package.
Multiwatt-15
ORDERING NUMBERS : L6114 (Powerdip)
L6115 (Multiwatt-15)
PIN CONNECTIONS (top view)
L6115 (Multiwatt-15)
L6114 (Powerdip)
April 1993
1/11
L6114 - L6115
BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage
VCC
Supply Voltage
ID
IDM (*)
ISD
@<0>Tpins = 90 °C
@<0>Tcase = 90 °C
Continuous Drain Current
Pulsed Drain Current
@<0>Tpins = 90 °C
@<0>Tcase = 90 °C
Continuous Source-drain
Diode Current
Value
Unit
100
V
60
V
Powerdip
Multiwatt –15
1.5
3
A
A
Powerdip
Multiwatt –15
5
8
A
A
Powerdip
Multiwatt –15
1.5
3
A
A
Powerdip
Multiwatt –15
5
8
A
A
7
V
V
ISDM
Pulsed Source Drain Diode Current
VIN
Input Voltage
VEN
Enable Voltage
7
VS
Source Voltage
– 1 to + 4
V
Ptot
Total Power Dissipation
4.3
20
1.3
2.3
W
W
W
W
– 40 to + 150
°C
Tstg, Tj
@
@
@
@
Tpins = 90 °C
Tcase = 90 °C
Tamb = 70 °C
Tamb = 70 °C
Powerdip
Multiwatt –15
Powerdip
Multiwatt –15
Storage and Junction Temperature Range
(*) Pulse width ≤ 300 µs, duty cycle ≤ 10 %.
Note : ID, IDM, ISD, ISDM are given per channel.
THERMAL DATA
Symbol
Parameter
Powerdip
Multiwatt–15
Unit
Rth j-pins
Thermal Resistance Junction-pins
Max.
14
-
o
Rth j-case
Thermal Resistance Junction-case
Max.
-
3
o
C/W
Rth j-amb
Thermal Resistance Junction-ambient
Max.
65
35
o
C/W
2/11
C/W
L6114 - L6115
ELECTRICAL CHARACTERISTICS (Tj = 25oC, VCC = 40V, unless otherwise specified)
Symbol
Parameter
Test Conditions
VCC
Supply Voltage
ICC
Supply Current
All VIN = H
VEN = Square Wave
(200kHz, 50 % DC)
IQ
Quiescent Current
VEN = L
Drain Source Breakdown Voltage
ID = 1mA, VEN = L
Output Leakage Current
VEN = L
VDS = 100V
VDS = 80V, Tj = 125°C
BVDSS
IDSS
RDS (on) (*)
Static Drain-source on Resistance
Min.
Typ.
14
Max.
48
9
2
Unit
V
mA
3
100
mA
V
mA
1
1
VCC ≥ 14V, ID = 1.5A
VEN, VIN = H
Ω
0.7
VIN L, VEN L
Input Low Voltage
– 0.3
0.8
V
VIN H, VEN H
Input High Voltage
2
7
V
IIN L, IEN L
Input Low Current
VIN, VEN = L
– 100
µA
IIN H, IEN H
Input High Current
VIN, VEN = H
10
µA
td (on)
tr
td (off)
tf
VSD (*)
VSD (on) (*)
Turn on Delay Time
Rise Time
Turn off Delay Time
ID = 1.5A
See Test Circuit and
Waveforms
Fall Time
300
ns
100
ns
400
ns
100
ns
Source Drain Diode Forward Voltage
ISD = 1.5A, VEN = L
1.5
V
Source Drain Forward Voltage
ISD = 1.5A - VIN, VEN = H
1.2
V
(*) Pulse test : pulse width = 300 µs, duty cycle = 2 %.
3/11
L6114 - L6115
SWITCHING TIMES RESISTIVE LOAD
Figure 1 : Test Circuit
(Pins x = Powerdip ; Pins (x) = Multiwatt).
Figure 2 : Waveforms.
a)
4/11
b)
L6114 - L6115
TEST CIRCUIT (Pins x = Powerdip ; Pins (x) = Multiwatt)
Figure 3 : Quiescent Current and Output
Leakage Current..
Figure 4 : Supply Current.
VIN = 2 V
VEN = 0.8 V
VEN = square wave
Figure 5 : RDS (on).
VCC = 14 V,
VIN = 2 V,
f = 3 KHz
ID = square wave,
(*) VDS is taken during the time in which the
VDS
ID = 1.5 A
RDS =
ISD square wave, 1.5
f = 3 KHz
VIN = 2 V,
{
f = 200 KHz
DC = 50 %
Figure 6 : Source-drain Diode Forward Voltage.
VEN = 2V
DC = 2 %
DC = 2 %
-
Set VEN = 0.8 V for VSD (taken during the time in which
ISD = 1.5 A)
-
Set VEN = 2 V for VSD (on) (taken during the time in which
ISD = 1.5 A)
5/11
L6114 - L6115
Figure 7 : Input Logic Levels
Set
Set
Set
Set
V = 0.8 V
V = 0.8 V
V= 2V
V= 2V
Figure 8 : Static Drain-source on Resistance.
6/11
S1,S2 open
S1,S2 close
S1,S2 open
S1,S2 close
for
for
for
for
IIN L and IEN L
VIN L and VEN H
IIN H and IEN H
VIN H and VEN H
Figure 9 : Normalized Break-down Voltage vs.
Temperature.
L6114 - L6115
Figure 10 : Normalized on Resistance vs.
Temperature.
Figure 11 : Typical Source-drain Diode Forward
Voltage.
Figure 12 : Rth j-amb vs. Dissipated Power(Multiwatt).
(*) Rth ≈ 9 °C/W.
7/11
L6114 - L6115
Figure 13 : Transient Thermal Resistance for Single Pulses (Multiwatt).
Figure 14 : Peak Transient Thermal Resistance vs.Pulse width and duty cycle (Multiwatt).
8/11
L6114 - L6115
POWERDIP20 PACKAGE MECHANICAL DATA
mm
DIM.
MIN.
a1
0.51
B
0.85
b
b1
TYP.
inch
MAX.
MIN.
TYP.
MAX.
0.020
1.40
0.033
0.50
0.38
0.020
0.50
D
0.055
0.015
0.020
24.80
0.976
E
8.80
0.346
e
2.54
0.100
e3
22.86
0.900
F
7.10
0.280
I
5.10
0.201
L
Z
3.30
0.130
1.27
0.050
9/11
L6114 - L6115
MULTIWATT15 PACKAGE MECHANICAL DATA
DIM.
mm
MIN.
TYP.
A
MAX.
5
B
C
2.65
1.6
MIN.
TYP.
MAX.
0.197
0.104
0.063
D
E
0.49
1
0.55
0.019
0.022
F
G
0.66
1.14
1.27
0.75
1.4
0.026
0.045
0.050
0.030
0.055
G1
17.57
17.78
17.91
0.692
0.700
0.705
H1
19.6
0.039
0.772
H2
10/11
inch
20.2
0.795
L
22.1
22.6
0.870
L1
22
22.5
0.866
0.890
0.886
L2
17.65
18.1
0.695
0.713
L3
L4
17.25
10.3
17.5
10.7
17.75
10.9
0.679
0.406
0.689
0.421
0.699
0.429
L7
M
2.65
4.2
4.3
2.9
4.6
0.104
0.165
0.169
0.114
0.181
M1
4.5
5.08
5.3
0.177
0.200
0.209
S
1.9
2.6
0.075
0.102
S1
1.9
2.6
0.075
0.102
Dia1
3.65
3.85
0.144
0.152
L6114 - L6115
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for
the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its
use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of SGS-THOMSON Microelectronics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
MULTIWATT® is a Registered Trademark of SGS-THOMSON Microelectronics
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A.
11/11
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