ASI MRF1004 Npn silicon rf power transistor Datasheet

MRF1004MA
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .280 4L STUD
The ASI MRF1004MA is Designed
for Class B and C, TACAN, IFF, and
DME Applications up to 1090 MHz.
FEATURES:
• Class B and C Operation
• Common Base
• PG = 10 dB at 4.0 W/1090 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
250 mA
VCE
20 V
PDISS
7.0 W @ TC = 25°C
TJ
-65 C to +200 °C
TSTG
-65 C to +150 °C
θJC
25.0 C/W
O
O
O
CHARACTERISTICS
1 = Collector
3 & 4 = Base
O
TC = 25 C
NONETEST CONDITIONS
SYMBOL
2 = Emitter
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 5.0 mA
50
V
BVCEO
IC = 5.0 mA
20
V
BVEBO
IE = 1.0 mA
3.5
V
ICBO
VCB = 35 V
hFE
VCE = 5.0 V
IC = 75 mA
VCC = 35 V
POUT = 4.0 W
PG
ηC
10
f = 1090 MHz
0.5
mA
100
---
10
11
dB
40
45
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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