PHILIPS BAP51-05W General purpose pin diode Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D102
BAP51-05W
General purpose PIN diode
Product specification
Supersedes data of 1999 Jul 01
2001 Jan 23
NXP Semiconductors
Product specification
General purpose PIN diode
BAP51-05W
FEATURES
PINNING
 Two elements in common cathode configuration in a
small SMD plastic package
PIN
 Low diode capacitance
 Low diode forward resistance.
DESCRIPTION
1
anode (a1)
2
anode (a2)
3
common cathode
APPLICATIONS
 General RF applications.
handbook, halfpage
DESCRIPTION
3
3
Two planar PIN diodes in common cathode configuration
in a SOT323 small SMD plastic package.
1
1
2
2
Top view
MAM382
Marking code: 1W-
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage

50
V
IF
continuous forward current

50
mA
Ptot
total power dissipation

240
mW
Tstg
storage temperature
65
+150
C
Tj
junction temperature
65
+150
C
2001 Jan 23
Ts  90 C
2
NXP Semiconductors
Product specification
General purpose PIN diode
BAP51-05W
ELECTRICAL CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per diode
VF
forward voltage
IF = 50 mA

0.95
1.1
V
VR
reverse voltage
IR = 10 A
50


V
IR
reverse current
VR = 50 V


100
nA
Cd
diode capacitance
VR = 0; f = 1 MHz

0.4

pF
VR = 1 V; f = 1 MHz

0.3
0.55
pF
VR = 5 V; f = 1 MHz

0.2
0.35
pF
IF = 0.5 mA; f = 100 MHz; note 1

5.5
9

IF = 1 mA; f = 100 MHz; note 1

3.6
6.5

rD
diode forward resistance
IF = 10 mA; f = 100 MHz; note 1

1.5
2.5

L
charge carrier life time
when switched from IF = 10 mA to
IR = 6 mA; RL = 100 ;
measured at IR = 3 mA

550

ns
LS
series inductance
IF = 10 mA; f = 100 MHz

1.6

nH
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
2001 Jan 23
PARAMETER
thermal resistance from junction to soldering point
3
VALUE
UNIT
250
K/W
NXP Semiconductors
Product specification
General purpose PIN diode
BAP51-05W
GRAPHICAL DATA
MLD507
102
handbook, halfpage
MLD508
500
Cd
handbook, halfpage
rD
(Ω)
(fF)
400
10
300
200
1
100
10−1
10−1
10
1
IF (mA)
0
102
4
0
f = 100 MHz; Tj = 25 C.
Fig.2
Fig.3
Forward resistance as a function of forward
current; typical values.
MGS659
20
Diode capacitance as a function of reverse
voltage; typical values.
MLD509
handbook, halfpage
s 2
21
(dB)
−10
21
(dB)
−0.5
(1)
(2)
(3)
−1
−20
−1.5
−30
−2
−40
1
1.5
2
2.5
−50
0.5
3
f (GHz)
(1) IF = 10 mA.
(2) IF = 1 mA
(3) IF = 0.5 mA
Diode inserted in series with a 50  stripline circuit and biased via the
analyzer Tee network. Tamb = 25 C.
1
1.5
2
2.5
f (GHz)
3
Diode zero biased and inserted in series with a 50  stripline circuit.
Tamb = 25 C.
Insertion loss (s212) of the diode as a
function of frequency; typical values.
2001 Jan 23
16
0
0
handbook, halfpage
|S | 2
Fig.4
12
VR (V)
f = 100 MHz; Tj = 25 C.
−2.5
0.5
8
Fig.5
4
Isolation (s212) of the diode as a function of
frequency; typical values.
NXP Semiconductors
Product specification
General purpose PIN diode
BAP51-05W
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
2001 Jan 23
REFERENCES
IEC
JEDEC
JEITA
SC-70
5
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
NXP Semiconductors
Product specification
General purpose PIN diode
BAP51-05W
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
DEFINITIONS
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However, NXP Semiconductors does not give any
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aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
2001 Jan 23
6
NXP Semiconductors
Product specification
General purpose PIN diode
BAP51-05W
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Quick reference data  The Quick reference data is an
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qualified products in automotive equipment or
applications.
Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
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reliability of the device.
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2001 Jan 23
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Printed in The Netherlands
R77/01/pp8
Date of release: 2001 Jan 23
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