APT6013B2FLL
APT6013LFLL
600V 43A 0.130Ω
POWER MOS 7
R
FREDFET
B2FLL
T-MAX™
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
LFLL
• Increased Power Dissipation
• Easier To Drive
• Popular T-MAX™ or TO-264 Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
TO-264
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT6013B2LL_LLL
UNIT
600
Volts
Drain-Source Voltage
43
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
565
Watts
Linear Derating Factor
4.52
W/°C
PD
TJ,TSTG
1
172
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
43
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
50
4
mJ
2500
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
600
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 21.5A)
TYP
MAX
UNIT
Volts
0.130
Ohms
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
9-2004
Characteristic / Test Conditions
050-7071 Rev B
Symbol
APT6013B2FLL_LFLL
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Ciss
Test Conditions
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
f = 1 MHz
Qg
3
Total Gate Charge
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
RESISTIVE SWITCHING
VGS = 15V
VDD = 300V
tf
ID = 43A @ 25°C
Fall Time
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
ns
635
VDD = 400V, VGS = 15V
585
ID = 43A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
6
nC
8
RG = 0.6Ω
Eon
UNIT
pF
70
130
25
40
11
14
27
ID = 43A @ 25°C
Turn-off Delay Time
MAX
5630
1060
VDD = 300V
Rise Time
td(off)
TYP
VGS = 10V
Qgs
tr
MIN
µJ
1030
VDD = 400V, VGS = 15V
ID = 43A, RG = 5Ω
695
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
(Body Diode)
172
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -43A)
1.3
Volts
dv/
Peak Diode Recovery
15
V/ns
dt
dv/
dt
43
5
t rr
Reverse Recovery Time
(IS = -43A, di/dt = 100A/µs)
Tj = 25°C
250
Tj = 125°C
500
Q rr
Reverse Recovery Charge
(IS = -43A, di/dt = 100A/µs)
Tj = 25°C
2.27
Tj = 125°C
6.87
IRRM
Peak Recovery Current
(IS = -43A, di/dt = 100A/µs)
Tj = 25°C
14.2
Tj = 125°C
27
Amps
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.22
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.7
0.5
Note:
0.10
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7071 Rev B
9-2004
0.25
0.15
0.3
0
t1
t2
0.05
0.1
0.05
10-5
SINGLE PULSE
10-4
°C/W
4 Starting Tj = +25°C, L = 2.70mH, RG = 25Ω, Peak IL = 43A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID43A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.20
UNIT
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1
Typical Performance Curves
APT6013B2FLL_LFLL
120
VGS =15 &10V
0.014
Power
(watts)
0.076
0.13
0.006F
0.019F
0.278F
ID, DRAIN CURRENT (AMPERES)
RC MODEL
Junction
temp. (°C)
100
8V
80
7V
60
6.5V
40
6V
20
5.5V
5V
Case temperature. (°C)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
160
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
120
100
80
60
40
TJ = +125°C
20
TJ = -55°C
0 1
2 3
4 5 6
7 8
9 10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
40
35
30
25
20
15
10
5
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I
D
V
NORMALIZED TO
= 10V @ I = 21.5A
GS
D
VGS=10V
1.10
1.05
VGS=20V
1.00
0.95
0.90
0
20
40
60
80
100
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
= 21.5A
GS
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
1.15
1.15
45
0.0
-50
V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
9-2004
0
TJ = +25°C
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.2
050-7071 Rev B
ID, DRAIN CURRENT (AMPERES)
140
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
172
10,000
100µS
10
1mS
1
TC =+25°C
TJ =+150°C
SINGLE PULSE
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
100
= 43A
12
VDS= 120V
8
VDS= 480V
4
0
40
80
120
160
200
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
100
0
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
120
DD
G
100
= 400V
= 5Ω
R
DD
R
G
= 400V
T = 125°C
J
80
= 5Ω
tr and tf (ns)
V
60
T = 125°C
J
L = 100µH
40
tf
60
40
20
0
10
2000
20
0
10
40
50
60
70
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
R
G
1600
tr
td(on)
30
40
50
60
70
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
3000
= 400V
I
2500
T = 125°C
J
L = 100µH
EON includes
diode reverse recovery
1200
800
Eon
Eoff
400
0
10
20
V
= 5Ω
SWITCHING ENERGY (µJ)
td(on) and td(off) (ns)
100
L = 100µH
20
Eon and Eoff (µJ)
0
V
80
9-2004
Crss
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
td(off)
050-7071 Rev B
100
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
VDS= 300V
Coss
1,000
10
10
100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
Ciss
10mS
1
I
APT6013B2FLL_LFLL
20,000
OPERATION HERE
LIMITED BY RDS (ON)
DD
D
30
= 400V
= 43A
T = 125°C
J
L = 100µH
EON includes
2000
Eoff
diode reverse recovery
1500
Eon
1000
500
20
30
40
50
60
70
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT6013B2FLL_LFLL
T-MAXTM (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
9-2004
4.50 (.177) Max.
25.48 (1.003)
26.49 (1.043)
050-7071 Rev B
Drain
Drain
20.80 (.819)
21.46 (.845)