Mini PROFET® BSP 450 MiniPROFET • High-side switch • Short-circuit protection • Input protection • Overtemperature protection with hysteresis • Overload protection • Overvoltage protection • Switching inductive load • Clamp of negative output voltage with inductive loads • Undervoltage shutdown • Maximum current internally limited • Electrostatic discharge (ESD) protection • Reverse battery protection1) 4 3 2 1 Package: SOT 223 Pins Type Ordering code 1 2 3 4 BSP 450 Q67000-S266 OUT GND IN Vbb Maximum Ratings Parameter Supply voltage range Load current self-limited Maximum input voltage2) Maximum input current Inductive load switch-off energy dissipation single pulse IL = 0.5A , TA = 85°C Operating temperature range Storage temperature range Max. power dissipation (DC)3) TA = 25 °C Electrostatic discharge capability (ESD) 4) Symbol Vbb IL VIN IIN EAS Thermal resistance chip - soldering point: chip - ambient3) Values -0.3...48 IL(SC) -5.0...Vbb ±5 0.5 Unit V A V mA J Tj Tstg Ptot VESD -40 ...+125 -55 ...+150 1.4 ±1 °C RthJS RthJA 7 70 + V bb Voltage Overvoltage Current Gate source protection limit protection Voltage Charge pump sensor Level shifter Limit for unclamped ind. loads Rectifier R IN K/W 4 V Logic ESDDiode 3 W kV OUT Temperature sensor 1 in Load ESD Logic GND MINI-PROFET 2 Signal GND Load GND 1) With resistor R GND=150 Ω in GND connection, resistor in series with IN connections reverse load current limited by connected load. 2) At V > V , the input current is not allowed to exceed ±5 mA. IN bb 3) BSP 450 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm 2 copper area for V connection bb 4) HBM according to MIL-STD 883D, Methode 3015.7 Semiconductor Group Page 1 of 7 20.06.96 BSP 450 Electrical Characteristics Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 24V unless otherwise specified Load Switching Capabilities and Characteristics On-state resistance (pin 4 to 1) IL = 0.5 A, Vin = high Tj = 25°C Tj = 125°C 5) Nominal load current (pin 4 to 1) ISO Standard: VON = Vbb - VOUT = 0.5 V TS = 85 °C Turn-on time to 90% VOUT Turn-off time to 10% VOUT RL = 47 Ω Slew rate on 10 to 30% VOUT, RL = 47 Ω Slew rate off 70 to 40% VOUT, RL = 47 Ω Input Allowable input voltage range, (pin 3 to 2) Input turn-on threshold voltage Vbb = 18...30V Tj = -25...+125°C Input turn-off threshold voltage Vbb = 18...30V Tj = -25...+125°C Input threshold hysteresis Off state input current (pin 3) VIN(off) = 1.82 V Tj = -25...+125°C On state input current (pin 3) VIN(on) = 3.0 V to Vbb Tj = -25...+125°C Input resistance Tj = -25...+125°C 5) I Values min typ Unit max --- 0.16 -- 0.2 0.38 Ω 0.7 -- -- A ton toff --- 60 90 100 150 µs dV /dton -- 2 4 V/µs -dV/dtoff -- 2 4 V/µs VIN VIN(T+) -3.0 -- --- Vbb 3.0 V V VIN(T-) 1.82 -- -- V -20 0.1 -- --- V µA -- -- 110 µA 1.5 2.8 3.5 kΩ RON IL(ISO) ∆VIN(T) IIN(off) IIN(on) RIN L(ISO) is limited by the current limitation, see IL(SC) Semiconductor Group Page 2 20.06.96 BSP 450 Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 24V unless otherwise specified Operating Parameters Operating voltage Tj =-25...+125°C Undervoltage shutdown Tj =-25...+125°C Undervoltage restart Tj =-25...+125°C: Undervoltage hysteresis Standby current (pin 4), Vin = low Tj =-25...+100°C Tj =125°C6) Operating current (pin 2), Vin = high Tj =-25...+125°C leakage current (pin 1) Vin = low Tj =-25...+125°C Protection Functions Current limit (pin 4 to 1) Tj = 25°C Tj = -25...+125°C Overvoltage protection Ibb=4mA Tj =-25...+125°C Output clamp (ind. load switch off) at VOUT = Vbb - VON(CL), Ibb = 4mA Thermal overload trip temperature Thermal hysteresis Inductive load switch-off energy dissipation 7) Tj Start = 85 °C, single pulse, IL = 0.5 A, Vbb = 12 V Reverse Battery Reverse battery voltage 8) Continious reverse drain current Drain-Source diode voltage IF = 1 A, Vin = low TA = 25°C Vbb(on) Vbb(under) Vbb(u rst) ∆Vbb(under) Ibb(off) Values min typ 12 7 ---- ---0.4 10 IGND -- IL(off) Unit max 1 40 10.5 11 -25 50 1.6 mA -- -- 2 µA 1.5 --72 2 2.4 --- A Vbb(AZ) VON(CL) 0.7 0.7 48 -- V V Tjt ∆Tjt EAS 135 --- 150 10 -- --0.5 °C K J --- 30 1 1.2 V A V IL(SC) -Vbb -IS -VON --- V V V V µA VOUT>Vbb 6) increase of standby current at T = 125°C caused by temperature sense current j 7) while demagnetizing load inductance, dissipated energy is E = (V AS ∫ ON(CL) * iL(t) dt, VON(CL) 2 1 ) approx. EAS= /2 * L * I * ( L VON(CL)-Vbb 8) Requires 150 Ω resistor in GND connection. Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Semiconductor Group Page 3 20.06.96 BSP 450 Max allowable power dissipation Ptot = f (TA,TSP) Ptot [W] Current limit characteristic IL(SC) = f (Von) (Von see testcircuit) IL(SC) [A] 16 3.5 14 3 12 2.5 TS P 10 2 8 125°C 25°C -25°C 1.5 6 1 4 TA 0.5 2 0 0 0 25 50 75 100 125 0 5 10 15 20 25 Von [V] TA, TSP[°C] Typ. input current IIN = f(VIN); Vbb = 24 V IIN [µA] On state resistance (Vbb-pin to OUT pin) RON = f (Tj);Vbb = 24 V;IL = 0.5 A RON [Ω] 0.4 90 0.35 80 -25°C 70 25°C 0.3 60 0.25 125°C 98% 50 0.2 40 0.15 30 0.1 20 0.05 10 0 0 -50 -25 0 25 50 75 100 125 Tj [°C] Semiconductor Group Page 4 0 5 10 15 20 25 VIN [V] 20.06.96 BSP 450 Typ. overload current IL(lim) = f (t), Vbb=24V, no heatsink, Param.:Tjstart IL(lim) [A] Typ. operating current IGND = f (Tj), Vbb=30V, VIN=high GND [mA] 1.6 1 1.4 0.8 1.2 1 0.6 0.8 125°C 0.6 -25°C 0.4 0.4 0.2 0.2 0 -20 0 20 40 60 80 100 0 -25 0 25 50 75 100 t [ms] Short circuit current IL(SC) = f (Tj);Vbb = 30 V; IL(SC) [Α] 125 Tj [°C] Typ. standby current Ibb(off) = f(Tj); Vbb = 30 V, VIN = low Ibb(off) [µA] 1.6 7 1.4 6 1.2 5 1 4 0.8 3 0.6 2 0.4 1 0.2 0 -25 0 0 25 50 75 100 125 -25 Tj [°C] Semiconductor Group Page 5 0 25 50 75 100 125 150 Tj [°C] 20.06.96 BSP 450 Test circuit Typ. input turn on voltage threshold VIN(T+) = f (Tj) VIN(T+) [V] 3 18V 2.5 30V 2 1.5 1 0.5 0 -25 0 25 50 75 100 125 Tj [°C] Typ. on-state resistance (Vbb-Pin to OUT-Pin) RON = f (Vbb,IL); IL = 0.5A, Tj = 25 °C; RON [mΩ] 160 140 120 100 80 60 40 20 0 0 5 10 15 20 25 30 35 40 45 Vbb [V] Semiconductor Group Page 6 20.06.96 BSP 450 Package: all dimensions in mm. SOT 223/4: Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73, 81541 München © Siemens AG 1997 All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing Please use the recycling operators known to you. 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Components used in life-support devices or systems must be expressly authorized for such purpose! 1 Critical components of the Semiconductor Group of Siemens AG, may only be used in life-support devices or 2 systems with the express written approval of the Semiconductor Group of Siemens AG. 1) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2) Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain and/or protecf human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Semiconductor Group Page 7 20.06.96