MAC12HCD, MAC12HCM, MAC12HCN Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as motor controls, heating controls or dimmers; or wherever full−wave, silicon gate−controlled devices are needed. http://onsemi.com TRIACS 12 AMPERES RMS 400 thru 800 VOLTS Features • • • • • • • • • Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3 High Commutating di/dt and High Immunity to dv/dt @ 125°C Minimizes Snubber Networks for Protection Blocking Voltage to 800 Volts On-State Current Rating of 12 Amperes RMS at 80°C High Surge Current Capability − 100 Amperes Industry Standard TO-220AB Package for Ease of Design Glass Passivated Junctions for Reliability and Uniformity Pb−Free Packages are Available* MT2 MT1 G MARKING DIAGRAM MAC12HCxG AYWW MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off-State Voltage (Note 1) (TJ = − 40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC12HCD MAC12HCM MAC12HCN VDRM, VRRM On-State RMS Current (All Conduction Angles; TC = 80°C) IT(RMS) 12 A Peak Non-Repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125°C) ITSM 100 A I2t 41 A2sec Circuit Fusing Consideration (t = 8.33 ms) Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) Value Unit V 1 16 W PG(AV) 0.35 W Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 December, 2005 − Rev. 3 3 400 600 800 PGM Average Gate Power (t = 8.3 ms, TC = 80°C) 2 TO−220AB CASE 221A−09 STYLE 4 1 x A Y WW G = D, M, or N = Assembly Location = Year = Work Week = Pb−Free Package PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 ORDERING INFORMATION Device Package Shipping MAC12HCD TO−220AB 50 Units / Rail MAC12HCDG TO−220AB (Pb−Free) 50 Units / Rail MAC12HCM TO−220AB 50 Units / Rail MAC12HCMG TO−220AB (Pb−Free) 50 Units / Rail MAC12HCN TO−220AB 50 Units / Rail MAC12HCNG TO−220AB (Pb−Free) 50 Units / Rail Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MAC12HC/D MAC12HCD, MAC12HCM, MAC12HCN THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds Symbol Value Unit RqJC RqJA 2.2 62.5 °C/W TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit − − − − 0.01 2.0 − − 1.85 10 10 10 − − − 50 50 50 − − 60 − − − − − − 60 80 60 0.5 0.5 0.5 − − − 1.5 1.5 1.5 (di/dt)c 15 − − A/ms Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dv/dt 600 − − V/ms Repetitive Critical Rate of Rise of On-State Current IPK = 50 A; PW = 40 msec; diG/dt = 200 mA/msec; f = 60 Hz di/dt − − 10 A/ms OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM, Gate Open) IDRM, IRRM TJ = 25°C TJ = 125°C mA ON CHARACTERISTICS Peak On-State Voltage (Note 2) (ITM = ± 17 A) VTM Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) IGT Holding Current (VD = 12 V, Gate Open, Initiating Current = ±150 mA) IH Latch Current (VD = 12 V, IG = 50 mA) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) IL Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) V mA mA mA VGT V DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current (VD = 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/ms, Gate Open, TJ = 125°C, f = 250 Hz, CL = 10 mF, LL = 40 mH, with Snubber) 2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 MAC12HCD, MAC12HCM, MAC12HCN Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VTM VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current on state IH IRRM at VRRM off state IH Quadrant 3 MainTerminal 2 − VTM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 (−) IGT GATE Quadrant I (+) IGT GATE MT1 MT1 REF REF IGT − + IGT (−) MT2 Quadrant III Quadrant 1 MainTerminal 2 + (−) MT2 Quadrant IV (+) IGT GATE (−) IGT GATE MT1 MT1 REF REF − MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 + Voltage IDRM at VDRM MAC12HCD, MAC12HCM, MAC12HCN 1.20 VGT, GATE TRIGGER VOLTAGE (VOLT) IGT, GATE TRIGGER CURRENT (mA) 100 Q3 Q2 Q1 10 1 −40 −25 −10 5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) 110 1.10 Q3 1.00 0.90 Q1 0.80 Q2 0.70 0.60 0.50 0.40 −40 −25 −10 125 100 LATCHING CURRENT (mA) HOLDING CURRENT (mA) 125 100 MT2 NEGATIVE MT2 POSITIVE 10 1 −40 −25 −10 5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) 110 Q2 Q3 Q1 10 1 −40 −25 −10 125 P(AV), AVERAGE POWER DISSIPATION (WATTS) 125 120°, 90°, 60°, 30° 110 95 180° 80 DC 0 2 5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) 110 125 Figure 4. Typical Latching Current versus Junction Temperature Figure 3. Typical Holding Current versus Junction Temperature TC, CASE TEMPERATURE (°C) 110 Figure 2. Typical Gate Trigger Voltage versus Junction Temperature Figure 1. Typical Gate Trigger Current versus Junction Temperature 65 5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) 4 6 8 10 IT(RMS), RMS ON-STATE CURRENT (AMP) 12 20 DC 18 180° 16 120° 14 12 10 8 60° 6 30° 4 2 0 0 Figure 5. Typical RMS Current Derating 2 4 6 8 10 IT(AV), AVERAGE ON-STATE CURRENT (AMP) Figure 6. On-State Power Dissipation http://onsemi.com 4 90° 12 MAC12HCD, MAC12HCM, MAC12HCN TYPICAL @ TJ = 25°C r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) I T, INSTANTANEOUS ON-STATE CURRENT (AMP) 100 MAXIMUM @ TJ = 125°C 10 MAXIMUM @ TJ = 25°C 1 1 0.1 0.01 0.1 1 10 100 t, TIME (ms) 1000 Figure 8. Typical Thermal Response 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 5 Figure 7. Typical On-State Characteristics http://onsemi.com 5 10000 MAC12HCD, MAC12HCM, MAC12HCN PACKAGE DIMENSIONS TO−220AB CASE 221A−09 ISSUE AA −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 4: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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