FW0524LCS Extremely Low Capacitance TVS Array Applications Personal Digital Assistance Wireless System ● USB3.1 ● High Speed Data Line ● Ethernet ● Esata Interfaces ● ● Feature With TVS Diode ESD Protection:Level 4 ● Low Clamping Voltage@IPP=4A,VC<15V ● 60 Watts peak pulse power per line(tp=8/20uS) ● Ultra low capacitance:0.3pf max.(any I/O to I/O .) ● Protection 4 lines I/O port ● DFN2510-10L ● IEC Compatibility EN61000-4 61000-4-2(ESD):Level 4,Contact:>±20kv,Air::>±25kv ● 61000-4-4(EFT):40A-5/50ns ● 61000-4-5(Surge):4A,8/20us ● Flow-Through design ● Mechanical Characteristics ● Molded JEDEC DFN 10pin package (2.5x1.0x0.58mm) ● Packing:Tape and Reel ● Flammability rating UL 94V-0 ● Halogen Free ● Device Characteristics Maximum Ratings@25 unless otherwise specified Parameter Peak pulse power (tp=8/20us) see fig 1. Operating Temperature Storage Temperature E1701M01-STD-FW-2017 New Symbol Value Units PPP 60 Watts TJ -55~150 °C TSTG -55~150 °C Pin Identification 1,2,4,5 Input lines 6,7,9,10 Output lines 3,8 Ground Futurewafer Technlogy co., Ltd., FW0524LCS Extremely Low Capacitance TVS Array Electrical Characteristics Parameter Symbol Condition VRWM Any I/O Pin to GND Reverse Stand-off Voltage Reverse Breakdown Voltage IZ=1mA , VBR Reverse Leakage Current VF Clamping Voltage VC Any I/O Pins to GND. IF=15mA GND to any I/O Pins IPP=1A tp=8/20us IPP=4A,tp=8/20us C I/O-GND Junction Capacitance Typ. 6.1 Any I/O Pin to GND. IR@VR=5V Forward Voltage Min. Vdc=0V,f=1MHZ C I/O-I/O Max. Units 5 V 8.5 V 50 nA 1.15 V 10 15 V 0.45 0.5 0.25 0.3 pf Rating and Characteristic curve FIGURE 1 Non-repetitive Peak pulse power V.S pulse time Peak Pulse Power(kw) 1 60W,8/20µS 0.1 0.01 0.1 1 10 100 1000 td-Pulse Width(us) FIGURE 2 VC&IPP Drawing(I/O-GND) 14 120 12 100 10 % of Rated power Clamping Voltage ,VC FIGURE 3 Power Derating Curve 8 6 4 80 60 40 20 2 0 0 0 0.5 1 1.5 2 2.5 IPP (A),8/20uS E1701M01-STD-FW-2017 New 3 3.5 4 4.5 5 0 25 50 75 100 125 150 Ambient Temp,TA(°C) Futurewafer Technlogy co., Ltd., FW0524LCS Extremely Low Capacitance TVS Array Typical Characteristics FIGURE 5 Breakdown Voltage VB Map Any I/O Pin to GND. FIGURE 4 Normalized Capacitance vs.Reverse Voltage 0.6 8 Breakdown Voltage,VB(V) I/O-GND 0.5 Capacitance CJ(pf) 0.4 I/O-I/O 0.3 0.2 7.9 7.8 7.7 7.6 0.1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 7.5 Sample size Reverse Voltage VR(V) Application MDDI Port Protection FW0524LCS E1701M01-STD-FW-2017 New FW0524LCS Futurewafer Technlogy co., Ltd., FW0524LCS Extremely Low Capacitance TVS Array Application FW0524LCS FW0524LCS FW0524LCS Suggested PAD Layout E1701M01-STD-FW-2017 New Futurewafer Technlogy co., Ltd., FW0524LCS Extremely Low Capacitance TVS Array Ordering Information Marking code: 0524S Tape & Reel Information Reel size 7” Reels per Box Parts per Box 10 30,000 Box dimensions Shipping Weight(Max.) cm Kg 23x23x15 (10 reels) 5.8 (120k/carton) Package Information SYMBOL A MILLIMTER MIN. NOM. MAX. 0.40 0.45 0.58 0.02 0.05 A1 b 0.15 0.20 0.25 b1 0.35 0.40 0.45 c 0.10 0.15 0.20 D 2.40 2.50 2.60 e 0.50BSC Nd 2.00BSC E 0.90 1.00 1.10 L 0.30 0.38 0.425 R 0.12 0.125 0.13 Futurewafer Technology co., Ltd 台灣未來芯航電股份有限公司 Tel ：+886-3-3573583 / Fax ：+886-3-3574065 Futurewafer.com.tw E1701M01-STD-FW-2017 New Futurewafer Technlogy co., Ltd.,