POWER TRANSISTOR E13003 SWITCHING REGULATOR APPLICATION • High speed switching • Suitable for switching regulator and motor control • Case : TO-220 molded plastic body TO-220 S E ATING P L ANE ±T ± B F C T S 4 A Q 1 2 3 U H K Z NPN SILICON TRANSISTOR FEATURES L R V J INC HE S MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ±±± ±±± 0.080 DIM A B C D F G H J K L N Q R S T U V Z G D N MIL L IME TE R S MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ±±± ±±± 2.04 o Tc=25 C unless otherwise specified Parameter Symbol Value UNIT Collector dissipation PC 20 W Collector current (DC) IC 1.5 A Collector current (Pulse) ICP Operating and storage junction temperature range TJ, TSTG ELECTRICAL CHARACTERISTICS Parameter 3 A o o o -55 C to +150 C C o Tc=25 C unless otherwise specified Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=1mA , IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA , IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE=1mA , IC=0 9 V Collector cut-off current ICBO VCB=700V , IE=0 1 mA Collector cut-off current ICEO VCE=400V , IB=0 500 μA Emitter cut-off current IEBO VEB=9V , IC=0 1 mA hFE(1) VCE=2V , IC=0.5mA 8 hFE(2) VCE=10V , IC=0.5mA 5 Collector-emitter saturation voltage VCEsat IC=1A , IB=250mA 1 V Base-emitter saturation voltage VBEsat IC=1A , IB=250mA 1.2 V 3 V DC current gain IE=2A 40 Base-emitter voltage VBE Transition frequency fT Fall time tf IC=1A , IB1=-IB2=0.2mA , 0.5 μS Storage time ts VCC=100V 2.5 μS VCE=10V , IC=100mA f=1MHz 5 MHz RATINGS AND CHARACTERISTIC CURVES E13003