M28ST 1A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE TO-92 High DC Current Gain and Large Current Capability CLASSIFICATION OF hFE (1) Product-Rank M28ST-B M28ST-C M28ST-D Range 300~550 500~700 650~1000 Collector 1Emitter 2Collector 3Base 2 3 REF. Base A B C D E 1 Emitter Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 REF. F G H J K Millimeter Min. Max. 0.30 0.51 1.27 TYP. 1.10 1.40 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 20 V Emitter to Base Voltage VEBO 6 Collector Currrent IC 1 V A Total Power Dissipation Thermal Resistance From Junction PD 0.625 W RθJA 200 °C / W TJ, TSTG 150, -55~150 °C Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector-base Breakdown Voltage V(BR)CBO 40 - - V IC =100µA, IE =0 Collector-emitter Breakdown Voltage V(BR)CEO 20 - - V IC =1mA, IB =0 Emitter-base Breakdown Voltage V(BR)EBO 60 - - V IE =100µA, IC =0 Collector Cut-off Current ICBO - - 1 µA VCB =40V, IE=0 Collector Cut-off Current ICEO - - 5 µA VCE =20V, IB = 0 Emitter Cut-off Current IEBO - - 0.1 µA VEB =5V, IC = 0 290 - - 300 - 1000 VCE =1V, IC =100mA 300 - - VCE =10V, IC =300mA VCE(sat) - - 0.55 V fT 100 - - MHz DC Current Gain Collector-emitter Saturation Voltage Transition Frequency http://www.SeCoSGmbH.com/ 29-May-2012 Rev.A hFE Test Conditions VCE =1V, IC =1mA IC =600mA, IB =20mA VCE =10V, IE=50mA, f=30MHz Any changes of specification will not be informed individually. Page 1 of 1