AP4606P
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Ultra-low On-resistance
▼ Fast Switching Characteristic
40V
RDS(ON)
3.7mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
3
125A
S
Description
AP4606 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-220 package is widely preferred for all commercialindustrial through hole applications. The low thermal
resistance and low package cost contribute to the worldwide
popular package.
G
D
TO-220(P)
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current (Chip)
ID@TC=25℃
ID@TC=100℃
125
A
Drain Current, VGS @ 10V
3
80
A
Drain Current, VGS @ 10V
3
80
A
400
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
125
W
PD@TA=25℃
Total Power Dissipation
2.4
W
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
1.2
℃/W
62
℃/W
1
201412171
AP4606P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
40
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=40A
-
-
3.7
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=40A
-
105
-
S
IDSS
Drain-Source Leakage Current
VDS=32V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=40A
-
100
160
nC
Qgs
Gate-Source Charge
VDS=32V
-
16
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
53
-
nC
td(on)
Turn-on Delay Time
VDS=20V
-
20
-
ns
tr
Rise Time
ID=40A
-
90
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
40
-
ns
tf
Fall Time
VGS=10V
-
30
-
ns
Ciss
Input Capacitance
VGS=0V
-
3920 6300
pF
Coss
Output Capacitance
VDS=25V
-
830
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
550
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.6
-
Ω
Min.
Typ.
IS=40A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=40A, VGS=0V
-
35
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
28
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 80A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4606P
400
200
ID , Drain Current (A)
300
200
V G = 6.0V
T C = 175 o C
10V
9.0V
8.0V
7.0V
V G =6.0V
160
ID , Drain Current (A)
10V
9.0V
8.0V
7.0V
o
T C = 25 C
120
80
100
40
0
0
0
4
8
12
16
0
20
2
4
6
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.8
I D =40A
T C =25 o C
I D =40A
V G =10V
2.4
Normalized RDS(ON)
RDS(ON) (mΩ)
8
6
2.0
1.6
1.2
4
0.8
0.4
2
5
6
7
8
9
-100
10
-50
0
50
100
150
200
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
40
I D =1mA
1.6
30
o
IS(A)
T j =175 C
Normalized VGS(th)
o
T j =25 C
20
1.2
0.8
10
0.4
0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-100
-50
0
50
100
150
200
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4606P
f=1.0MHz
5000
I D = 40 A
V DS =32V
10
4000
C iss
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
3000
2000
4
1000
2
C oss
C rss
0
0
0
20
40
60
80
100
1
120
11
Q G , Total Gate Charge (nC)
21
31
41
51
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Operation in this
area limited by
RDS(ON)
100us
ID (A)
100
1ms
10
10ms
100ms
DC
1
o
T C =25 C
Single Pulse
Normalized Thermal Response (Rthjc)
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
0.00001
100
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
200
160
V DS =5V
ID , Drain Current (A)
ID , Drain Current (A)
160
120
Limited by package
80
120
T j =175 o C
80
T j =25 o C
40
40
o
T j = -55 C
0
0
25
75
125
T C , Case Temperature (
175
o
C)
Fig 11. Drain Current v.s. Case
Temperature
0
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 12. Transfer Characteristics
4
AP4606P
2
160
I D =1mA
PD, Power Dissipation(W)
Normalized BVDSS
1.6
1.2
0.8
120
80
40
0.4
0
0
-100
-50
0
T
j
50
100
150
200
, Junction Temperature ( o C)
0
50
100
150
200
o
T C , Case Temperature( C)
Fig 13. Normalized BVDSS v.s. Junction
Fig 14. Total Power Dissipation
50
T j =25 o C
RDS(ON) (mΩ)
40
V GS =6.0 V
30
20
V GS =10V
10
0
0
20
40
60
80
100
120
140
I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
5
AP4606P
MARKING INFORMATION
Part Number
4606
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
6