GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER • LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) 25 4 20 Noise Figure, NF (dB) GA • HIGH ASSOCIATED GAIN: 13.5 dB typical at 2 GHz • LG = 1.0 µm, WG = 400 µm • TAPE & REEL PACKAGING DESCRIPTION The NE76118 is a low cost gallium arsenide metal semiconductor field effect transistor housed in a miniature (SOT-343) plastic surface mount package. The device is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity. Its low noise figure, high gain, small size and weight make it an ideal low noise amplifier transistor in the 1-4 GHz frequency range. The NE76118 is suitable for GPS, PCS, WLAN, MMDS, TVRO, and other commercial applications. 15 3 10 5 2 0 1 Associated Gain, GA (dB) NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, ID= 10 mA FEATURES • LOW NOISE FIGURE: 0.8 dB typical at 2 GHz NE76118 NF 0 0.5 1 2 3 4 5 6 7 8 910 Frequency, f (GHz) NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOL NF GA P1dB G1dB IDSS PARAMETERS AND CONDITIONS Noise Figure at VDS = 3 V, ID = 10 mA f = 2 GHz f = 4 GHz Associated Gain at VDS = 3 V, ID = 10 mA f = 2 GHz f = 4 GHz Output Power at 1 dB Gain Compression Point, f = 2 GHz VDS = 3 V, IDS = 10 mA VDS = 3 V, IDS = 30 mA NE76118 18 UNITS MIN dB dB dB dB 9.5 TYP MAX 0.8 0.9 1.4 13.5 10.5 dBm dBm 12 14 Gain at P1dB, f = 2 GHz VDS = 3 V, IDS = 10 mA VDS = 3 V, IDS = 30 mA dB dB 13 14 Saturated Drain Current at VDS = 3 V, VGS = 0 V mA 30 100 VP Pinch Off Voltage at VDS = 3 V, ID = 100 µA V -3.0 -0.5 gm Transconductance at VDS = 3 V, ID = 10 mA mS 20 Gate to Source Leakage Current at VGS = -5 V µA IGSO 45 10 Note: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening test with the fixture tuned for the "generic" type but not for each specimen. California Eastern Laboratories NE76118 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS VDS Drain to Source Voltage V 5 VGDO Gate to Drain Voltage V -5 VGSO Gate to Source Voltage V -6 IDSS IDS Drain Current mA Channel Temperature °C 150 TSTG Storage Temperature °C -65 to +150 mW 130 PT Total Power Dissipation VCE = 3 V, IC = 10 mA RATINGS TCH TYPICAL NOISE PARAMETERS (TA = 25°C) Note: 1.Operation in excess of any one of these parameters may result in permanent damage. ΓOPT FREQ. NFOPT GA (MHz) (dB) (dB) MAG ANG Rn/50 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0.55 0.65 0.75 0.85 0.93 1.00 1.08 1.15 1.22 1.30 23.0 18.0 16.0 14.2 12.9 11.7 10.7 10.0 9.2 8.5 0.77 0.78 0.80 0.79 0.78 0.76 0.72 0.64 0.45 0.28 9 26 38 42 47 55 64 76 94 109 0.64 0.50 0.41 0.35 0.30 0.26 0.23 0.20 0.18 0.16 RECOMMENDED OPERATING CONDITIONS SYMBOLS PARAMETERS UNITS VDS Drain to Source Voltage V 3 4 Drain Current mA 10 20 Input Power dBm ID PIN MIN TYP MAX 0 TYPICAL PERFORMANCE CURVES (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 100 200 Drain Current, IDS (mA) Total Power Dissipation, PT (mW) 250 150 100 50 0 0 50 100 150 80 VGS 0 60 -0.2 40 -0.4 20 -0.6 0 -0.8 -1.0 1 0 200 2 3 4 5 Drain to Source Voltage, VDS (V) Ambient Temperature, TA (˚C) FORWARD INSERTION GAIN vs. DRAIN CURRENT DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 25 VDS = 3 V VDS = 3 V 80 Drain Current, IDS (mA) 20 f = 1 GHz 60 f = 2 GHz 15 40 10 20 0 -2.0 5 0 -1.0 Gate to Source Voltage, VGS (V) 0 1 2 3 5 7 Drain Current, ID (mA) 10 20 NE76118 TYPICAL SCATTERING PARAMETERS (TA = 25°C) VDS = 2 V, IDS = 10 mA FREQUENCY (MHz) 100 200 300 400 500 600 700 800 900 1000 1500 2000 2500 3000 3500 4000 4500 5000 S11 MAG 1.001 0.998 0.944 0.988 0.980 0.972 0.961 0.951 0.937 0.924 0.846 0.761 0.678 0.604 0.536 0.472 0.414 0.356 S21 ANG -3.3 -6.5 -9.7 -12.9 -16.1 -19.3 -22.5 -25.7 -28.9 -32.0 -47.4 -61.7 -74.3 -85.0 -94.7 -103.8 -113.5 -123.7 MAG 3.816 3.800 3.785 3.773 3.763 3.741 3.717 3.689 3.651 3.615 3.403 3.138 2.856 2.605 2.397 2.227 2.106 2.011 S12 ANG 176.6 173.4 170.3 167.0 163.8 160.5 157.4 154.3 151.2 148.1 133.3 119.7 107.6 97.0 87.8 79.4 71.4 63.1 MAG S22 ANG 0.004 0.010 0.014 0.019 0.024 0.028 0.033 0.037 0.042 0.046 0.065 0.081 0.093 0.103 0.115 0.128 0.144 0.165 80.8 89.7 85.1 83.3 82.6 80.2 79.9 78.0 76.7 74.7 68.5 63.8 60.6 59.5 60.1 61.0 62.4 63.8 MAG 0.730 0.728 0.726 0.724 0.721 0.716 0.712 0.707 0.701 0.694 0.659 0.621 0.590 0.570 0.554 0.536 0.515 0.492 K ANG -1.2 -2.2 -3.4 -4.5 -5.6 -6.8 -7.9 -9.0 -10.2 -11.3 -16.7 -21.5 -24.8 -26.9 -27.5 -27.2 -26.4 -26.0 MAG1 (dB) 0.07 0.02 0.10 0.15 0.17 0.22 0.24 0.28 0.31 0.36 0.51 0.67 0.82 0.94 1.04 1.11 1.14 1.14 29.4 25.9 24.3 23.0 21.9 21.2 20.5 19.9 19.4 18.9 17.2 15.9 14.9 14.0 12.1 10.4 9.4 8.6 K MAG1 VDS = 2 V, IDS = 30 mA FREQUENCY S11 S21 S12 S22 (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 100 200 300 400 500 600 700 800 900 1000 1500 2000 2500 3000 3500 4000 4500 5000 1.001 0.996 0.990 0.982 0.971 0.959 0.944 0.929 0.911 0.893 0.794 0.693 0.602 0.525 0.458 0.399 0.348 0.299 -3.7 -7.4 -10.9 -14.5 -18.1 -21.7 -25.2 -28.6 -32.1 -35.4 -51.5 -65.8 -77.8 -87.6 -95.9 -103.6 -111.9 -120.4 5.136 5.109 5.074 5.045 5.008 4.957 4.903 4.838 4.762 4.689 4.276 3.827 3.398 3.032 2.738 2.500 2.329 2.196 176.2 172.4 168.8 165.2 161.6 157.9 154.3 151.0 147.5 144.1 128.5 114.7 102.7 92.5 83.8 76.0 68.6 61.1 0.004 0.009 0.013 0.016 0.021 0.024 0.028 0.032 0.036 0.039 0.056 0.070 0.083 0.097 0.111 0.127 0.147 0.172 84.5 90.1 87.6 85.2 84.7 81.8 81.0 79.8 79.7 77.5 73.1 70.4 68.2 68.0 68.1 68.7 68.9 68.6 0.650 0.650 0.647 0.645 0.641 0.637 0.633 0.628 0.623 0.617 0.587 0.558 0.538 0.531 0.526 0.520 0.508 0.494 -1.1 -2.0 -2.9 -3.8 -4.8 -5.7 -6.7 -7.6 -8.5 -9.4 -13.6 -17.4 -19.7 -21.2 -21.5 -21.1 -20.3 -19.6 (dB) 0.03 0.05 0.12 0.19 0.22 0.29 0.33 0.38 0.41 0.47 0.65 0.81 0.95 1.04 1.10 1.13 1.13 1.10 31.3 27.7 26.1 25.1 23.7 23.1 22.4 21.9 21.3 20.8 18.9 17.4 16.1 13.8 12.0 10.8 9.9 9.1 K MAG1 VDS = 3 V, IDS = 10 mA FREQUENCY S11 S21 S12 S22 (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 100 200 300 400 500 600 700 800 900 1000 1500 2000 2500 3000 3500 4000 4500 5000 1.001 0.998 0.993 0.988 0.979 0.972 0.961 0.951 0.937 0.924 0.847 0.762 0.679 0.605 0.536 0.471 0.412 0.355 -3.2 -6.5 -9.6 -12.8 -15.9 -19.2 -22.3 -25.5 -28.6 -31.7 -46.9 -61.2 -73.6 -84.3 -93.8 -102.7 -111.9 -121.2 3.840 3.825 3.808 3.795 3.786 3.764 3.741 3.712 3.675 3.638 3.427 3.162 2.877 2.622 2.410 2.237 2.115 2.022 176.6 173.4 170.3 167.1 163.9 160.6 157.5 154.5 151.3 148.2 133.5 120.0 107.9 97.3 88.3 80.0 72.1 64.0 0.003 0.009 0.012 0.017 0.022 0.025 0.029 0.033 0.037 0.041 0.057 0.071 0.080 0.089 0.099 0.110 0.126 0.147 95.2 90.4 85.4 84.7 83.3 80.9 79.7 77.8 77.5 75.2 69.3 65.2 62.3 61.9 63.5 65.5 68.1 70.6 0.763 0.763 0.761 0.759 0.756 0.752 0.748 0.743 0.738 0.732 0.698 0.662 0.632 0.613 0.597 0.582 0.566 0.548 -1.3 -2.2 -3.1 -4.1 -5.1 -6.1 -7.2 -8.2 -9.2 -10.3 -15.2 -19.6 -22.7 -24.5 -25.1 -24.6 -23.7 -23.1 (dB) -0.11 0.01 0.10 0.13 0.17 0.21 0.25 0.29 0.31 0.36 0.52 0.68 0.84 0.98 1.08 1.15 1.17 1.15 30.6 26.2 24.9 23.5 22.4 21.7 21.1 20.5 20.0 19.5 17.8 16.5 15.5 14.7 12.2 10.7 9.8 9.1 NE76118 TYPICAL SCATTERING PARAMETERS (TA = 25 °C) VDS = 3 V, IDS = 30 mA FREQUENCY S11 (MHz) S21 MAG 100 200 300 400 500 600 700 800 900 1000 1500 2000 2500 3000 3500 4000 4500 5000 ANG 0.999 0.996 0.990 0.981 0.970 0.959 0.944 0.928 0.910 0.892 0.793 0.694 0.603 0.527 0.461 0.402 0.352 0.305 MAG -3.6 -7.4 -10.8 -14.5 -18.0 -21.6 -25.1 -28.5 -31.9 -35.3 -51.2 -65.3 -77.1 -86.7 -94.7 -102.0 -109.5 -117.2 5.174 5.143 5.106 5.076 5.037 4.984 4.929 4.861 4.786 4.709 4.290 3.836 3.401 3.032 2.735 2.497 2.327 2.199 S12 ANG 176.2 172.3 168.8 165.1 161.5 157.8 154.3 150.9 147.4 144.0 128.4 114.6 102.7 92.5 84.0 76.3 69.1 61.8 MAG S22 ANG 0.002 0.008 0.011 0.015 0.019 0.022 0.025 0.029 0.032 0.035 0.050 0.063 0.074 0.085 0.098 0.113 0.132 0.156 MAG 102.3 92.4 84.5 84.5 83.6 81.3 81.1 80.1 79.3 77.9 73.3 70.7 69.5 69.9 70.8 72.2 73.4 74.1 0.695 0.695 0.694 0.691 0.688 0.683 0.680 0.674 0.669 0.663 0.633 0.604 0.584 0.574 0.570 0.564 0.557 0.545 K ANG -1.0 -1.9 -2.7 -3.7 -4.6 -5.5 -6.4 -7.3 -8.2 -9.1 -13.0 -16.6 -18.9 -20.3 -20.6 -20.1 -19.2 -18.6 MAG1 (dB) -0.11 0.03 0.16 0.19 0.24 0.29 0.33 0.37 0.42 0.46 0.66 0.83 0.97 1.07 1.12 1.15 1.13 1.10 33.9 28.3 26.6 25.4 24.2 23.6 22.9 22.3 21.7 21.3 19.3 17.9 16.6 13.9 12.3 11.1 10.2 9.6 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain OUTLINE DIMENSIONS (Units in mm) ORDERING INFORMATION PART NUMBER QTY PACKAGE OUTLINE 18 2.1 ± 0.2 +0.10 0.3 -0.05 (LEADS 2, 3, 4) 1.25 ± 0.1 0.65 2 0.60 V52 2.0 ± 0.2 1 3 0.65 1.3 NE76118-T1 3 K pcs per Reel1 NE76118-T2 3 K pcs per Reel2 Notes: 1. Embossed tape 8 mm wide. Pin 3 (source) and pin 4 (drain) face perforated side of the tape. 2. Embossed tape 8 mm wide. Pin 1 (source) and pin 2 (gate) face perforated side of the tape. 0.65 4 +0.10 0.4 -0.05 0.3 0.9 ± 0.1 0 to 0.1 +0.10 0.15 -0.05 Pin Connections 1. Source 2. Gate 3. Source 4. Drain EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 7/18/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE