Diodes DCX143EU Small signal complementary pre-biased dual transistor Datasheet

DCX (xxxx) U
SMALL SIGNAL COMPLEMENTARY PRE-BIASED DUAL TRANSISTOR
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Features
•
•
•
•
•
Epitaxial Planar Die Construction
Built-In Biasing Resistors
Surface Mount Package Suited for Automated Assembly
Lead Free/RoHS Compliant (Note 3)
"Green" Device (Note 4 and 5)
SOT-363
A
CXX YM
B C
Mechanical Data
•
•
•
•
•
•
•
•
•
Case: SOT-363
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking Information: See Page 11
Ordering Information: See Page 11
Weight: 0.006 grams (approximate)
P/N
DCX124EU
DCX144EU
DCX114YU
DCX123JU
DCX114EU
DCX143TU
DCX143EU
DCX114TU
R1
22KΩ
47KΩ
10KΩ
2.2KΩ
10KΩ
4.7KΩ
4.7KΩ
10KΩ
R2
22KΩ
47KΩ
47KΩ
47KΩ
10KΩ
4.7KΩ
-
MARKING
C17
C20
C14
C06
C13
C07
C08
C12
Maximum Ratings NPN Section
Output Current
Power Dissipation (Total)
Thermal Resistance, Junction to Ambient Air
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
5.
M
J
D
F
L
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
⎯
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
α
0°
8°
All Dimensions in mm
CQ1
BQ2
EQ2
CQ1
BQ2
EQ2
6
5
4
6
5
4
R1 R2
R2 R
1
Q1
Q2
1
2
3
EQ1
BQ1
CQ2
R1, R2
1
EQ1
R1
R1
Q2
2
3
CQ2
BQ1
Q1: NPN Transistor
Q2: PNP Transistor
R1 Only
SCHEMATIC DIAGRAM
@TA = 25°C unless otherwise specified
Characteristic
Output Current
K
Q1
Symbol
VCC
Supply Voltage, (6) to (1)
Input Voltage, (2) to (1)
H
Dim
DCX124EU
DCX144EU
DCX114YU
DCX123JU
DCX114EU
DCX143TU
DCX143EU
DCX114TU
DCX124EU
DCX144EU
DCX114YU
DCX123JU
DCX114EU
DCX143TU
DCX143EU
DCX114TU
All
(Note 2)
(Note 1)
Unit
V
IC (Max)
PD
Value
50
-10 to +40
-10 to +40
-6 to +40
-5 to +12
-10 to +40
-5V max
-10 to +30
-5V max
30
30
70
100
50
100
100
100
100
200
RθJA
TJ, TSTG
625
°C/W
-55 to +150
°C
VIN
IO
V
mA
mA
mW
Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
150mW per element must not be exceeded.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30347 Rev. 11 - 2
1 of 12
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DCX (xxxx) U
© Diodes Incorporated
Maximum Ratings PNP Section
@TA = 25°C unless otherwise specified
Characteristic
Supply Voltage, (4) to (3)
Input Voltage, (5) to (4)
Output Current
Output Current
DCX124EU
DCX144EU
DCX114YU
DCX123JU
DCX114EU
DCX143TU
DCX143EU
DCX114TU
DCX124EU
DCX144EU
DCX114YU
DCX123JU
DCX114EU
DCX143TU
DCX143EU
DCX114TU
All
Symbol
Value
Unit
VCC
50
V
VIN
IO
+10 to -40
+10 to -40
+6 to -40
+5 to -12
+10 to -40
+5V max
+10 to -30
+5V max
-30
-30
-70
-100
-50
-100
-100
-100
V
mA
IC (Max)
-100
mA
Power Dissipation (Total)
(Page 1: Note 2)
PD
200
mW
Thermal Resistance, Junction to Ambient Air
(Page 1: Note 1)
RθJA
625
°C/W
TJ, TSTG
-55 to +150
°C
Operating and Storage Temperature Range
DS30347 Rev. 11 - 2
2 of 12
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DCX (xxxx) U
© Diodes Incorporated
Electrical Characteristics NPN Section
@TA = 25°C unless otherwise specified
Characteristic
R1 Only (DCX143TU & DCX114TU)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Symbol
Min
Typ
Max
Unit
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
50
50
5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
−−
0.5
0.5
V
V
V
μA
μA
Collector-Emitter Saturation Voltage
VCE(sat)
⎯
⎯
0.3
V
hFE
ΔR1
fT
100
-30
⎯
250
⎯
250
600
+30
⎯
⎯
%
MHz
IC = 50μA
IC = 1mA
IE = 50μA
VCB = 50V
VEB = 4V
IC/IB = 2.5mA / 0.25mA
DCX143TU
IC/IB = 1mA / 0.1mA
DCX114TU
IC = 1mA, VCE = 5V
⎯
VCE = 10V, IE = -5mA, f = 100MHz
Vl(off)
0.5
0.5
0.3
0.5
0.5
0.5
1.1
1.1
⎯
⎯
1.1
1.16
1.9
1.9
⎯
⎯
1.9
1.99
3.0
3.0
1.4
1.1
3.0
3.0
V
0.1
0.3
V
DC Current Transfer Ratio
Input Resistor (R1) Tolerance
Gain-Bandwidth Product
R1/R2 Only
Input Voltage
Output Voltage
Input Current
DCX124EU
DCX144EU
DCX114YU
DCX123JU
DCX114EU
DCX143EU
DCX124EU
DCX144EU
DCX114YU
DCX123JU
DCX114EU
DCX143EU
DCX124EU
DCX144EU
DCX114YU
DCX123JU
DCX114EU
DCX143EU
DCX124EU
DCX144EU
DCX114YU
DCX123JU
DCX114EU
DCX143EU
Output Current
DC Current Gain
Input Resistor (R1) Tolerance
Resistance Ratio Tolerance
Gain-Bandwidth Product
DS30347 Rev. 11 - 2
DCX124EU
DCX144EU
DCX114YU
DCX123JU
DCX114EU
DCX143EU
Vl(on)
⎯
VO(on)
⎯
⎯
VCC = 5V, IO = 100μA
Il
⎯
⎯
IO(off)
⎯
56
68
68
80
30
50
-30
-20
⎯
⎯
0.36
0.18
0.88
3.6
0.88
0.88
0.5
⎯
⎯
⎯
⎯
⎯
250
+30
+20
⎯
%
%
MHz
Gl
ΔR1
R2/R1
fT
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VO = 0.3, IO = 5mA
VO = 0.3, IO = 2mA
VO = 0.3, IO = 1mA
VO = 0.3, IO = 5mA
VO = 0.3, IO = 10mA
VO = 0.3, IO = 20mA
IO/Il = 10mA / 0.5mA
IO/Il = 10mA / 0.5mA
IO/Il = 5mA / 0.25mA
IO/Il = 5mA / 0.25mA
IO/Il = 10mA / 0.5mA
IO/Il = 10mA / 0.5mA
mA
VI = 5V
μA
VCC = 50V, VI = 0V
VO = 5V, IO = 5mA
VO = 5V, IO = 5mA
VO = 5V, IO = 10mA
VO = 5V, IO = 10mA
VO = 5V, IO = 5mA
VO = 5V, IO = 10mA
⎯
⎯
VCE = 10V, IE = 5mA, f = 100MHz
DCX (xxxx) U
© Diodes Incorporated
Electrical Characteristics PNP Section
@TA = 25°C unless otherwise specified
Characteristic
R1 Only (DCX143TU & DCX114TU)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Symbol
Min
Typ
Max
Unit
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
-50
-50
-5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-0.5
-0.5
V
V
V
μA
μA
Collector-Emitter Saturation Voltage
VCE(sat)
⎯
⎯
-0.3
V
hFE
ΔR1
fT
100
-30
⎯
250
⎯
250
600
+30
⎯
⎯
%
MHz
IC = -50μA
IC = -1mA
IE = -50μA
VCB = -50V
VEB = -4V
IC/IB = 2.5mA / 0.25mA
DCX143TU
IC/IB = 1mA / 0.1mA
DCX114TU
IC = -1mA, VCE = -5V
⎯
VCE = -10V, IE = 5mA, f = 100MHz
Vl(off)
-0.5
-0.5
-0.3
-0.5
-0.5
-0.5
-1.1
-1.1
⎯
⎯
-1.1
-1.16
-1.9
-1.9
⎯
⎯
-1.9
-2.5
-3.0
-3.0
-1.4
-1.1
-3.0
-3.0
V
-0.1
-0.3
V
DC Current Transfer Ratio
Input Resistor (R1) Tolerance
Gain-Bandwidth Product
R1/R2 Only
Input Voltage
Output Voltage
Input Current
DCX124EU
DCX144EU
DCX114YU
DCX123JU
DCX114EU
DCX143EU
DCX124EU
DCX144EU
DCX114YU
DCX123JU
DCX114EU
DCX143EU
DCX124EU
DCX144EU
DCX114YU
DCX123JU
DCX114EU
DCX143EU
DCX124EU
DCX144EU
DCX114YU
DCX123JU
DCX114EU
DCX143EU
Output Current
DC Current Gain
Input Resistor (R1) Tolerance
Resistance Ratio Tolerance
Gain-Bandwidth Product
DS30347 Rev. 11 - 2
DCX124EU
DCX144EU
DCX114YU
DCX123JU
DCX114EU
DCX143EU
Vl(on)
⎯
VO(on)
⎯
⎯
VCC = -5V, IO = -100μA
Il
⎯
⎯
IO(off)
⎯
56
68
68
80
30
40
-30
-20
⎯
⎯
-0.36
-0.18
-0.88
-3.6
-0.88
-0.88
-0.5
⎯
⎯
⎯
⎯
⎯
250
+30
+20
⎯
%
%
MHz
Gl
ΔR1
R2/R1
fT
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VO = -0.3, IO = -5mA
VO = -0.3, IO = -2mA
VO = -0.3, IO = -1mA
VO = -0.3, IO = -5mA
VO = -0.3, IO = -10mA
VO = -0.3, IO = -20mA
IO/Il = -10mA / -0.5mA
IO/Il = -10mA / -0.5mA
IO/Il = -5mA / -0.25mA
IO/Il = -5mA / -0.25mA
IO/Il = -10mA / -0.5mA
IO/Il = -10mA / -0.5mA
mA
VI = -5V
μA
VCC = 50V, VI = 0V
VO = -5V, IO = -5mA
VO = -5V, IO = -5mA
VO = -5V, IO = -10mA
VO = -5V, IO = -10mA
VO = -5V, IO = -5mA
VO = -5V, IO = -10mA
⎯
⎯
VCE = -10V, IE = -5mA, f = 100MHz
DCX (xxxx) U
© Diodes Incorporated
Typical Curves – Total Device
PD, POWER DISSIPATION (mW)
250
200
150
100
50
0
0
50
125
150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
Typical Curves – DCX123JU
PNP Section
1
1,000
hFE, DC CURRENT GAIN
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
75°C
0.1
-25°C
25°C
100
0.01
0.001
0
40
10
20
30
IC, COLLECTOR CURRENT (mA)
Fig. 2 Typical VCE(SAT) vs. IC
10
50
12
100
T A = 75°C
IC, COLLECTOR CURRENT (mA)
COB, CAPACITANCE (pF)
10
IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain
100
IE = 0mA
f = 1MHz
10
8
6
4
2
0
1
0
25
20
5
10
15
VR, REVERSE BIAS VOLTAGE (V)
Fig. 4 Typical Output Capacitance
DS30347 Rev. 11 - 2
30
10
1
0.1
0.01
0.001
0
5 of 12
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5
7
9 10
6
3
4
8
VIN, INPUT VOLTAGE (V)
Fig. 5 Typical Collector Current vs. Input Voltage
1
2
DCX (xxxx) U
© Diodes Incorporated
Typical Curves – DCX123JU
PNP Section (Continued)
VIN, INPUT VOLTAGE (V)
10
1
0.1
0
50
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Input Voltage vs. Collector Current
Typical Curves – DCX123JU
NPN Section
1,000
1
VCE = 10V
TA = 75° C
0.1
hFE, DC CURRENT GAIN
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
TA = 75° C
TA = -25°C
T A = 25°C
0.01
0.001
0
40
10
20
30
IC, COLLECTOR CURRENT (mA)
Fig. 7 Typical VCE(SAT) vs. IC
100
10
50
1
100
4
TA = 75°C
IC, COLLECTOR CURRENT (mA)
COB, CAPACITANCE (pF)
IE = 0mA
f = 1MHz
3
2
1
0
0
100
10
IC, COLLECTOR CURRENT (mA)
Fig. 8 Typical DC Current Gain
10
15
25
5
20
VR, REVERSE BIAS VOLTAGE (V)
Fig. 9 Typical Output Capacitance
DS30347 Rev. 11 - 2
VO = 5V
TA = 25°C
10
TA = -25°C
1
0.1
0.01
0.001
30
6 of 12
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0
1
2
3
6
7
9 10
5
4
8
VIN, INPUT VOLTAGE (V)
Fig. 10 Typical Collector Current vs. Input Voltage
DCX (xxxx) U
© Diodes Incorporated
Typical Curves – DCX123JU
NPN Section (Continued)
VIN, INPUT VOLTAGE (V)
10
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Fig. 11 Typical Input Voltage vs. Collector Current
Typical Curves – DCX143EU
Ib = 3.5mA
PNP Section
Ib = 4mA
Ib = 4.5mA
Ib = 1mA
Ib = 0.5mA
Ib = 1.5mA
hFE, DC CURRENT GAIN
IC , COLLECTOR CURRENT (A)
Ib = 3mA
Ib = 2mA
Ib = 2.5mA
IC, COLLECTOR CURRENT (mA)
Fig. 13 Typical DC Current Gain
VCE, COLLECTOR EMITTER VOLTAGE (V)
Fig. 12 Typical VCE vs. IC
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
VBE, BASE-EMITTER VOLTAGE (V)
IC/IB = 10
IC, COLLECTOR CURRENT (mA)
Fig. 15 Typical VBE vs. IC
IC, COLLECTOR CURRENT (mA)
Fig. 14 Typical VCE(SAT) vs. IC
DS30347 Rev. 11 - 2
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DCX (xxxx) U
© Diodes Incorporated
PNP Section (Continued)
VBE(SAT), BASE-EMITTER
SATURATION VOLTAGE (V)
VI(ON), INPUT VOLTAGE (V)
Typical Curves – DCX143EU
IC, COLLECTOR CURRENT (mA)
Fig. 16 Typical VBE(SAT) vs. IC
NPN Section
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (A)
Typical Curves – DCX143EU
IC, OUTPUT CURRENT (mA)
Fig. 17 Typical VI(ON) vs. IC
IC, COLLECTOR CURRENT (mA)
Fig. 19 Typical DC Current Gain
VBE, BASE-EMITTER VOLTAGE (V)
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
VCE, COLLECTOR EMITTER VOLTAGE (V)
Fig. 18 Typical VCE vs. IC
IC, COLLECTOR CURRENT (mA)
Fig. 20 Typical VCE(SAT) vs. IC
DS30347 Rev. 11 - 2
IC, COLLECTOR CURRENT (mA)
Fig. 21 Typical VBE vs. IC
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DCX (xxxx) U
© Diodes Incorporated
NPN Section (Continued)
VBE(SAT), BASE-EMITTER
SATURATION VOLTAGE (V)
VI(ON), INPUT VOLTAGE (V)
Typical Curves – DCX143EU
IC, OUTPUT CURRENT (mA)
Fig. 23 Typical VI(ON) vs. IC
IC, COLLECTOR CURRENT (mA)
Fig. 22 Typical VBE(SAT) vs. IC
Typical Curves – DCX114TU
PNP Section
1,000
1
0.1
hFE, DC CURRENT GAIN
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
T A = 75°C
T A = -25°C
TA = 25°C
0.01
100
10
1
0.001
0
40
10
20
30
IC, COLLECTOR CURRENT (mA)
Fig. 24 Typical VCE(SAT) vs. IC
1
50
4
IC, COLLECTOR CURRENT (mA)
COB, CAPACITANCE (pF)
100
100
IE = 0mA
f = 1MHz
3
2
1
0
10
IC, COLLECTOR CURRENT (mA)
Fig. 25 Typical DC Current Gain
0
5
10
15
25
20
VR, REVERSE BIAS VOLTAGE (V)
Fig. 26 Typical Output Capacitance
DS30347 Rev. 11 - 2
30
10
TA = -25°C
1
0.1
0.01
0.001
0
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8
9 10
6
7
3
4
5
VIN, INPUT VOLTAGE (V)
Fig. 27 Typical Collector Current vs. Input Voltage
1
2
DCX (xxxx) U
© Diodes Incorporated
Typical Curves – DCX114TU
PNP Section (Continued)
VIN, INPUT VOLTAGE (V)
10
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Fig. 28 Typical Input Voltage vs. Collector Current
Typical Curves – DCX114TU
NPN Section
1
1,000
0.1
hFE, DC CURRENT GAIN
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
TA = 75°C
TA = -25°C
TA = 25° C
0.01
100
10
1
0.001
0
40
10
20
30
IC, COLLECTOR CURRENT (mA)
Fig. 29 Typical VCE(SAT) vs. IC
1
50
4
100
3
2
1
0
0
10
15
25
5
20
VR, REVERSE BIAS VOLTAGE (V)
Fig. 31 Typical Output Capacitance
DS30347 Rev. 11 - 2
100
T A = 75°C
TA = 25°C
IC, COLLECTOR CURRENT (mA)
COB, CAPACITANCE (pF)
IE = 0mA
f = 1MHz
10
IC, COLLECTOR CURRENT (mA)
Fig. 30 Typical DC Current Gain
30
10
T A =-25°C
1
0.1
0.01
0.001
0
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6
7
8
9 10
5
3
4
VIN, INPUT VOLTAGE (V)
Fig. 32 Typical Collector Current vs. Input Voltage
1
2
DCX (xxxx) U
© Diodes Incorporated
Typical Curves – DCX114TU
NPN Section (Continued)
VIN, INPUT VOLTAGE (V)
10
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Fig. 33 Typical Input Voltage vs. Collector Current
Ordering Information (Note 6)
Device
DCX124EU-7-F
DCX144EU-7-F
DCX114YU-7-F
DCX123JU-7-F
DCX114EU-7-F
DCX143TU-7-F
DCX143EU-7-F
DCX114TU-7-F
Notes:
Packaging
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
CXX = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
CXX YM
Date Code Key
Year
2006
2007
2008
2009
2010
2011
2012
2013
2014
2015
Code
T
U
V
W
X
Y
Z
A
B
C
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30347 Rev. 11 - 2
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DCX (xxxx) U
© Diodes Incorporated
Suggested Pad Layout
E
Z
E
Dimensions Value (in mm)
Z
2.5
G
1.3
X
0.42
Y
0.6
C
1.9
E
0.65
C
G
Y
X
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30347 Rev. 11 - 2
12 of 12
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