HANBit HMD4M144D9WG 64Mbyte(4Mx144) 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package mounted on a 200-pin, double-sided, FR-4-printed circuit board. A 0.1uF or 4.7uF decoupling capacitor is mounted on the printed circuit board for each DRAM components. The module is a dual In-line memory module with edge connections and is intended for mounting in to 200-pin edge connector sockets. All module components may be powered from a single 5V DC power supply and all inputs and outputs are TTL-compatible. FEATURES OPTIONS w Access times : 50, 60 ns MARKING w Timing w High -density 64MByte design 50ns access -5 w Part identification 60ns access -6 w Packages - HMD4M144D9WG (4K Cycles/64ms Ref, Gold) w Single +5V ± 0.5V power supply 200-pin DIMM D w JEDEC Standard pinout w ECC mode operation w TTL compatible inputs and output PERFORMANCE RANGE Speed tRAC tCAC tRC tPC -5 50ns 13ns 90ns 35ns -6 60ns 15ns 110ns 40ns PIN NAMES Pin Name Function Pin Name Function Pin Name Function BA0-BA11 Address Input BRAS Row Address Strobe Vss Ground DQ0-DQ143 Data In/Out BCAS1,BCAS2 Column Address Strobe NC No Connection BWE Read/Write Enable Vcc Power(+5V) URL:www.hbe.co.kr REV.1.0.(August.2002) -1- HANBit Electronics Co.,Ltd. HANBit HMD4M144D9WG PIN ASSIGNMENT PIN Symbol PIN Symbol PIN Symbol PIN Symbol PIN Symbol PIN Symbol 1 Vss 35 DQ14 69 DQ29 101 Vss 135 Vss 169 DQ94 2 Vss 36 DQ50 70 DQ65 102 Vss 136 Vss 170 DQ130 3 DQ0 37 DQ15 71 DQ30 103 BA6 137 DQ80 171 DQ95 4 DQ36 38 DQ51 72 DQ66 104 BA7 138 DQ116 172 DQ131 5 DQ1 39 DQ16 73 DQ31 105 BA8 139 DQ81 173 DQ96 6 DQ37 40 DQ52 74 DQ67 106 BA9 140 DQ117 174 DQ132 7 DQ2 41 DQ17 75 DQ32 107 BA10 141 DQ82 175 DQ97 8 DQ38 42 DQ53 76 DQ68 108 BA11 142 DQ118 176 DQ133 9 DQ3 43 DQ18 77 DQ33 109 NC 143 DQ83 177 DQ98 10 DQ39 44 DQ54 78 DQ69 110 /BWE 144 DQ119 178 DQ134 11 DQ4 45 DQ19 79 DQ34 111 NC 145 DQ84 179 DQ99 12 DQ40 46 DQ55 80 DQ70 112 NC 146 DQ120 180 DQ135 13 DQ5 47 DQ20 81 Vcc 113 Vss 147 DQ85 181 DQ100 14 DQ41 48 DQ56 82 Vcc 114 Vss 148 DQ121 182 DQ136 15 DQ6 49 Vcc 83 DQ35 115 Vss 149 DQ86 183 Vcc 16 DQ42 50 Vcc 84 DQ71 116 Vss 150 DQ122 184 Vcc 17 Vcc 51 DQ21 85 /BCAS1 117 DQ72 151 Vcc 185 DQ101 18 Vcc 52 DQ57 86 /BCAS2 118 DQ108 152 Vcc 186 DQ137 19 DQ7 53 DQ22 87 /BRAS 119 Vcc 153 DQ87 187 DQ102 20 DQ43 54 DQ58 88 NC 120 Vcc 154 DQ123 188 DQ138 21 DQ8 55 DQ23 89 NC 121 DQ73 155 DQ88 189 DQ103 22 DQ44 56 DQ59 90 NC 122 DQ109 156 DQ124 190 DQ139 23 DQ9 57 DQ24 91 NC 123 DQ74 157 DQ89 191 DQ104 24 DQ45 58 DQ60 92 NC 124 DQ110 158 DQ125 192 DQ140 25 DQ10 59 DQ25 93 BA0 125 DQ75 159 DQ90 193 DQ105 26 DQ46 60 DQ61 94 BA1 126 DQ111 160 DQ126 194 DQ141 27 DQ11 61 DQ26 95 BA2 127 DQ76 161 DQ91 195 DQ106 28 DQ47 62 DQ62 96 BA3 128 DQ112 162 DQ127 196 DQ142 29 DQ12 63 DQ27 97 BA4 129 DQ77 163 DQ92 197 DQ107 30 DQ48 64 DQ63 98 BA5 130 DQ113 164 DQ128 198 DQ143 31 DQ13 65 Vss 99 Vss 131 DQ78 165 DQ93 199 Vss 32 DQ49 66 Vss 100 Vss 132 DQ114 166 DQ129 200 Vss 33 Vss 67 DQ28 133 DQ79 167 Vss 34 Vss 68 DQ64 134 DQ115 168 Vss 200PIN DIMM TOP VIEW URL:www.hbe.co.kr REV.1.0.(August.2002) -2- HANBit Electronics Co.,Ltd. HANBit HMD4M144D9WG FUNCTIONAL BLOCK DIAGRAM /CAS2 /RAS /CAS /RAS /OE W /CAS /RAS /OE W /CAS /RAS /OE W /CAS /RAS /OE W /CAS1 DQ0-15 A0-A11 DQ0-DQ15 U2 DQ16-32 A0-A11 DQ16-DQ31 U10 DQ32-47 A0-A11 DQ32-DQ47 U9 DQ48-63 A0-A11 DQ48-DQ63 U3 /CAS1 /CAS2 /RAS /OE U1 DQ63-79 W /CAS /RAS /OE W /CAS /RAS /OE W /CAS /RAS /OE W /CAS /RAS /OE W DQ64-DQ79 A0-A11 U4 DQ80-95 A0-A11 DQ80-DQ95 U5 DQ96-111 A0-A11 DQ96-DQ111 U7 DQ112-127 A0-A11 DQ112-DQ127 U6 DQ128-143 A0-A11 DQ128-DQ143 /WE A0-A11 Vcc Vss URL:www.hbe.co.kr REV.1.0.(August.2002) -3- 0.1uF or 4.7uF Capacitor for each DRAM HANBit Electronics Co.,Ltd. HANBit HMD4M144D9WG A /RAS /CAS1 /CAS2 /WE /BA /BRAS /BCAS1 /BCAS2 /BWE 74FCT162244 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN ,OUT -1V to 7.0V Voltage on Vcc Supply Relative to Vss Vcc -1V to 7.0V Power Dissipation PD 9W TSTG -55oC to 150oC Voltage on Any Pin Relative to Vss Storage Temperature Short Circuit Output Current IOS 50mA w Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED DC OPERATING CONDITIONS ( Voltage reference to VSS, TA=0 to 70 o C ) PARAMETER SYMBOL MIN TYP. MAX UNIT Supply Voltage Vcc 4.5 5.0 5.5 V Ground Vss 0 0 0 V Input High Voltage VIH 2.4 - Vcc+1 V Input Low Voltage VIL -1.0 - 0.8 V DC AND OPERATING CHARACTERISTICS SYMBOL SPEED MIN MAX UNITS ICC1 -5 - 396 mA -6 - 366 mA ICC2 Don't care - 12 mA ICC3 -5 - 396 mA -6 - 366 mA -5 - 396 mA -6 - 366 mA ICC5 Don't care - 6 mA ICC6 -5 - 990 mA -6 - 900 mA ICC4 URL:www.hbe.co.kr REV.1.0.(August.2002) -4- HANBit Electronics Co.,Ltd. HANBit HMD4M144D9WG Il(L) -60 40 µA IO(L) -5 5 µA VOH 2.4 - V VOL - 0.4 V ICC1 : Operating Current * (/RAS , /CAS , Address cycling @t RC=min.) ICC2 : Standby Current (/RAS=/CAS=VIH ) ICC3 : /RAS Only Refresh Current * ( /CAS=V IH, /RAS, Address cycling @tRC=min ) ICC4 : Fast Page Mode Current * (/RAS=VIL, /CAS, Address cycling @tPC=min ) ICC5 : Standby Current (/RAS=/CAS=Vcc-0.2V ) ICC6 : /CAS-Before-/RAS Refresh Current * (/RAS and /CAS cycling @t RC=min ) IIL : Input Leakage Current (Any input 0V ≤ VIN ≤ 6.5V, all other pins not under test = 0V) IOL : Output Leakage Current (Data out is disabled, 0V ≤ VOUT ≤ 5.5V VOH : Output High Voltage Level (IOH= -5mA ) VOL : Output Low Voltage Level (IOL = 4.2mA ) * NOTE: ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In ICC1 and ICC3, address cad be changed maximum once while /RAS=VIL. In ICC4, address can be changed maximum once within one page mode cycle. CAPACITANCE o ( TA=25 C, Vcc = 5V, f = 1Mz ) DESCRIPTION SYMBOL MIN MAX UNITS Input Capacitance (A0-A11) CIN1 - 65 pF Input Capacitance (/WE) C IN2 - 80 pF Input Capacitance (/RAS0) CIN3 - 50 pF Input Capacitance (/CAS1-/CAS2) CIN4 - 40 pF Input/Output Capacitance (DQ0-31) CDQ1 - 20 pF AC CHARACTERISTICS o ( 0 C ≤ TA ≤ 70oC , Vcc = 5V±10%, See notes 1,2.) -5 STANDARD OPERATION -6 SYMBOL UNIT MIN MAX MAX Random read or write cycle time tRC Access time from /RAS tRAC 50 60 ns Access time from /CAS tCAC 15 20 ns Access time from column address tAA 30 35 ns /CAS to output in Low-Z tCLZ 0 Output buffer turn-off delay tOFF 0 15 0 20 ns Transition time (rise and fall) tT 3 50 3 50 ns URL:www.hbe.co.kr REV.1.0.(August.2002) -5- 110 MIN 130 ns 0 ns HANBit Electronics Co.,Ltd. HANBit HMD4M144D9WG /RAS precharge time tRP 40 /RAS pulse width tRAS 60 /RAS hold time tRSH 15 20 ns /CAS hold time tCSH 60 70 ns /CAS pulse width tCAS 15 10K 20 10K ns /RAS to /CAS delay time tRCD 20 45 20 50 ns /RAS to column address delay time tRAD 15 30 15 35 ns /CAS to /RAS precharge time tCRP 5 5 ns Row address set-up time tASR 0 0 ns Row address hold time tRAH 10 10 ns Column address set-up time tASC 0 0 ns Column address hold time tCAH 15 15 ns Column address hold referenced to /RAS tAR 50 55 ns Column Address to /RAS lead time tRAL 30 35 ns Read command set-up time tRCS 0 0 ns Read command hold referenced to /CAS tRCH 0 0 ns Read command hold referenced to /RAS tRRH 0 0 ns Write command hold time tWCH 15 15 ns Write command hold referenced to /RAS tWCR 50 55 ns Write command pulse width tWP 15 15 ns Write command to /RAS lead time tRWL 15 20 ns Write command to /CAS lead time tCWL 15 20 ns Data-in set-up time tDS 0 0 ns Data-in hold time tDH 15 15 ns Data-in hold referenced to /RAS tDHR 50 55 ns Refresh period tREF Write command set-up time tWCS 0 0 ns /CAS setup time (C-B-R refresh) tCSR 10 10 ns URL:www.hbe.co.kr REV.1.0.(August.2002) -6- 50 10K 70 16 ns 10K 16 ns ns HANBit Electronics Co.,Ltd. HANBit HMD4M144D9WG /CAS hold time (C-B-R refresh) tCHR 15 15 ns /RAS precharge to /CAS hold time tRPC 5 5 ns Access time from /CAS precharge tCPA Fast page mode cycle time tPC 40 45 ns /CAS precharge time (Fast page) tCP 10 10 ns /RAS pulse width (Fast page ) tRASP 60 /W to /RAS precharge time (C-B-R refresh) tWRP 10 10 ns /W to /RAS hold time (C-B-R refresh) tWRH 10 10 ns /CAS precharge(C-B-R counter test) tCPT 20 30 ns 35 100K 40 70 100K ns ns NOTES 1.An initial pause of 200µs is required after power-up followed by any 8 /RAS-only or /CAS-before-/RAS refresh cycles before proper device operation is achieved. 2.VIH (min) and VIL (max) are reference levels for measuring timing of input signals. Transition times are measured between VIH(min) and VIL(max) and are assumed to be 5ns for all inputs. 3.Measured with a load equivalent to 2TTL loads and 100pF 4.Operation within the tRCD(max) limit insures that tRAC(max) can be met. tRCD(max) is specified as a reference point only. If tRCD is greater than the specified tRCD(max) limit, then access time is controlled exclusively by t CAC. 5.Assumes that tRCD ≥ tRCD(max) 6. tAR, tWCR, tDHR are referenced to tRAD(max) 7.This parameter defines the time at which the output achieves the open circuit condition and is not referenced to V OH or VOL. 8. tWCS, tRWD, tCWD anf tAWD are non restrictive operating parameter. They are included in the data sheet as electrical characteristic only. If t WCS ≥ tWCS(min) the cycle is an early write cycle and the data out pin will remain high impedance for the duration of the cycle. 9. Either tRCH or tRRH must be satisfied for a read cycle. 10. These parameters are referenced to the CAS leading edge in early write cycles and to the W leading edge in readwrite cycles. 11. Operation within the tRAD(max) limit insures that tRAC(max) can be met. tRAD(max) is specified as a reference point only. If tRAD is greater than the specified tRAD(max) limit. then access time is controlled by tAA. URL:www.hbe.co.kr REV.1.0.(August.2002) -7- HANBit Electronics Co.,Ltd. HANBit HMD4M144D9WG PACKAGING INFORMATION 143.60 mm 136.70 mm R1.57 mm 3.45 mm R3.18±051 10.25 mm 18.52mm 6.45 mm R1.57±10 mm 6.35 mm 2.05 6.39mm 130.81 7.68mm MAX 2.54 mm 0.25 mm MAX MIN Gold : 1.04±0.10 mm Solder:0.914±0.10mm 1.27 1.29±0.08 mm ORDERING INFORMATION Part Number Density Org. Package HMD4M144D9WG-5 64MByte x 144 200 Pin-DMM HMD4M144D9WG-6 64MByte x 144 200 Pin-DIMM URL:www.hbe.co.kr REV.1.0.(August.2002) -8- Component Vcc MODE SPEED 9EA 5V ECC 50ns 9EA 5V ECC 60ns Number HANBit Electronics Co.,Ltd.