INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP50R250CP，IIPP50R250CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.25Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 13 A IDM Drain Current-Single Pulsed 31 A PD Total Dissipation @TC=25℃ 114 W Tj Max. Operating Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(ch-c) Rth(ch-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 1.1 ℃/W 62 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP50R250CP，IIPP50R250CP ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =250μA 500 VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.52mA 2.5 RDS(on) Drain-Source On-Resistance IGSS TYP MAX UNIT V 3.5 V VGS=13V; ID=7.8A 0.25 Ω Gate-Source Leakage Current VGS=20V;VDS=0V 0.1 μA IDSS Drain-Source Leakage Current VDS=500V; VGS= 0V 1 μA VSD Diode forward voltage IF=7.8A; VGS = 0V 1.2 V isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark