IRFD9110, SiHFD9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S HEXDIP Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. G S Dynamic dV/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel 175 °C Operating Temperature Fast Switching Lead (Pb)-free Available G D D P-Channel MOSFET ORDERING INFORMATION Package HEXDIP IRFD9110PbF Lead (Pb)-free SiHFD9110-E3 IRFD9110 SnPb SiHFD9110 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS - 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current Pulsed Drain VGS at - 10 V TC = 25 °C TC = 100 °C Currenta ID IDM Linear Derating Factor UNIT V - 0.70 - 0.49 A - 5.6 0.0083 W/°C EAS 140 mJ Currenta IAR - 0.7 A Repetitive Avalanche Energya EAR 0.13 mJ PD 1.3 W dV/dt - 5.5 V/ns TJ, Tstg - 55 to + 175 Single Pulse Avalanche Energyb Repetitive Avalanche Maximum Power Dissipation Peak Diode Recovery TC = 25 °C dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s 300d °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 25 V, starting TJ = 25 °C, L = 52 mH, RG = 25 Ω, IAS = - 2.0 A (see fig. 12). c. ISD ≤ - 4.0 A, dI/dt ≤ 75 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91138 S-81361-Rev. A, 07-Jul-08 www.vishay.com 1 IRFD9110, SiHFD9110 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SYMBOL TYP. MAX. UNIT RthJA - 120 °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS VGS = 0 V, ID = - 250 µA - 100 - - V ΔVDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.091 - V/°C VGS(th) VDS = VGS, ID = - 250 µA - 2.0 - - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS Gate-Source Threshold Voltage VDS = - 100 V, VGS = 0 V - - - 100 VDS = - 80 V, VGS = 0 V, TJ = 150 °C - - - 500 µA - - 1.2 Ω gfs VDS = - 50 V, ID = - 0.42 A 0.60 - - S Input Capacitance Ciss VGS = 0 V, - 200 - Output Capacitance Coss VDS = - 25 V, - 94 - f = 1.0 MHz, see fig. 5 - 18 - - - 8.7 - - 2.2 Drain-Source On-State Resistance Forward Transconductance RDS(on) ID = - 0.42 Ab VGS = - 10 V Dynamic Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs VGS = - 10 V ID = - 4.0 A, VDS = - 80 V see fig. 6 and 13b pF nC Gate-Drain Charge Qgd - - 4.1 Turn-On Delay Time td(on) - 10 - - 27 - - 15 - - 17 - - 4.0 - - 6.0 - - - - 0.70 - - - 5.6 - - - 5.5 V - 82 160 ns - 0.15 0.30 µC Rise Time Turn-Off Delay Time Fall Time tr td(off) tf Internal Drain Inductance LD Internal Source Inductance LS VDD = - 50 V, ID = - 4.0 A RG = 24 Ω, RD = 11 Ω, see fig. 10b Between lead, 6 mm (0.25") from package and center of die contact D ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = - 0.7 A, VGS = 0 Vb TJ = 25 °C, IF = - 4.0 A, dI/dt = 100 A/µsb Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 91138 S-81361-Rev. A, 07-Jul-08 IRFD9110, SiHFD9110 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 2 - Typical Output Characteristics, TC = 175 °C Document Number: 91138 S-81361-Rev. A, 07-Jul-08 Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRFD9110, SiHFD9110 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Document Number: 91138 S-81361-Rev. A, 07-Jul-08 IRFD9110, SiHFD9110 Vishay Siliconix RD VDS VGS D.U.T. RG +VDD - 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit td(on) td(off) tf tr VGS 10 % 90 % VDS Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case IAS L Vary tp to obtain required IAS VDS D.U.T RG VDS + V DD IAS VDD - 10 V tp 0.01 Ω tp VDS Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91138 S-81361-Rev. A, 07-Jul-08 Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 IRFD9110, SiHFD9110 Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG - 10 V 12 V 0.2 µF 0.3 µF QGS - QGD D.U.T. VG + VDS VGS - 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91138 S-81361-Rev. A, 07-Jul-08 IRFD9110, SiHFD9110 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG + • dV/dt controlled by RG • ISD controlled by duty factor "D" • D.U.T. - device under test + - VDD Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D= P.W. Period VGS = - 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % * ISD VGS = - 5 V for logic level and - 3 V drive devices Fig. 14 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91138. Document Number: 91138 S-81361-Rev. A, 07-Jul-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1