QFET ® FQB25N33 330V N-Channel MOSFET Features General Description • 25A, 330V, RDS(on) = 0.23Ω @VGS = 10V These N-Channel enhancement mode power field effect transistors are produced using Farichild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 58nC) • Low Crss (typical 40pF) This advanced technology has been especially tailored to minimized on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. • Fast switching • 100% avalanche tested A REE I DF M ENTATIO LE N MP • Qualified to AEC Q101 LE • Improved dv/dt capability • RoHS Compliant Absolute Maximum Ratings Symbol VDSS Drain-Source Voltage ID Drain Current Parameter - Continuous (TC = 25oC) - Continuous (TC = 100oC) IDM Drain Current VGSS Gate -Source Voltage EAS Single Pulse Avalanche Energy IAR Avalanche Current EAR dv/dt FQB25N33 330 - Pulsed (Note 1) A A 100 A V (Note 2) 370 mJ (Note 1) 25 A Repetitive Avalance Energy (Note 1) 37 mJ Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns 3.1 W Power Dissipation (TC = 25oC) - Derate above 25oC TJ, TSTG Operating and Storage Temperature TL 25 16.0 ±30 Power Dissipation (TA = 25oC) * PD Units V Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 250 W 2.0 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol RθJC Parameter FQB25N33 Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient * RθJA Thermal Resistance, Junction to Ambient Units 0.5 o C/W 40 o C/W 62.5 o C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2006 Fairchild Semiconductor Corporation FQB25N33 Rev. A 1 www.fairchildsemi.com FQB25N33 330V N-Channel MOSFET September 2006 Device Marking Device Package Reel Size Tape Width Quantity FQB25N33 FQB25N33 D2-PAK 330mm 24mm 800 Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage ID = 250µA, VGS = 0V 330 -- -- V -- 0.34 -- V/oC VDS = 330V,VGS = 0V VDS = 264V,TC =125°C -- -- 1 -- -- 10 Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA Gate-Body Leakage Current, Forward VGS = -30V, VDS = 0V -- -- -100 nA ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25 C IDSS Zero Gate Voltage Drain Current IGSSF IGSSR o µA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 3.0 -- 5.0 V RDS(on) Drain to Source On Resistance VGS = 10V, ID = 12.5A, -- 0.18 0.23 Ω gFS Forward Transonductance VDS = 50V, ID = 12.5A, (Note 4) -- 1 -- S -- 1510 2010 pF -- 290 385 pF -- 40 60 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg(TOT) Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain Charge VDD = 165V, ID = 25A RGS = 25Ω (Note 4, 5) VDS = 297V, ID = 25A, VGS = 15V, (Note 4, 5) -- 20 35 ns -- 100 160 ns -- 90 145 ns -- 70 110 ns -- 58 75 nC -- 11.2 -- nC -- 21 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 25 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 100 A VSD Drain-Source Diode Forward Voltage VGS = 0, IS = 25A -- -- 1.5 V trr Reverse Recovery Time -- 275 -- ns Qrr Reverse Recovery Charge VGS = 0, IS = 25A, dIF/dt = 100A/µs -- 3.6 -- µC (Note 4) Notes: 1: Repetitive Rating : Pluse width Limited by maximum junction temperature 2: L = 1.79mH, IAS = 25A, VDD = 50V, RG = 25Ω, Starting TJ = 25oC 3: ISD ≤ 25A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25oC 4: Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5: Essentially independent of operating temperature FQB25N33 Rev. A 2 www.fairchildsemi.com FQB25N33 330V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 100 VGS 10 15.0 V 10.0 V 8.0 V 7.5 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V ID, Drain Current [A] ID, Drain Current [A] Top : 1 1 o 150 C o 25 C 1 2. 250µs Pulse Test 0.1 10 2 4 6 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.45 100 IDR, Reverse Drain Current [A] 0.40 VGS = 10V 0.35 0.30 0.25 0.20 VGS = 15V 0.15 10 1 o 150 C 0.1 o 25 C 0.01 1E-3 * Notes : 1. VGS = 0V o * Note : TJ = 25 C 0.10 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] RDS(ON) [Ω ], Drain-Source On-Resistance o -55 C * Notes : 1. VDS = 50V * Notes : 1. 250µs Pulse Test o 2. TC = 25 C 0.1 10 0 10 20 30 40 50 2. 250µs Pulse Test 1E-4 0.0 60 0.2 ID, Drain Current [A] 0.4 0.6 0.8 1.0 1.2 VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 12 VDS = 66V 4000 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Capacitances [pF] CAPACITANCE (pF) Crss = Cgd 3000 Ciss 2000 Coss * Note ; 1. VGS = 0 V 1000 Crss 10 1 6 4 2 2. f = 1 MHz * Note : ID = 25A 10 0 10 20 30 40 50 60 70 QG, Total Gate Charge [nC] 100 VDS, Drain-Source Voltage [V] FQB25N33 Rev. A VDS = 264V 8 0 0 0.1 VDS = 165V 3 www.fairchildsemi.com FQB25N33 330V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 * Notes : 1. VGS = 0 V 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 250 µA 0.8 -100 -50 0 50 100 2. ID = 12.5 A 150 0.0 -100 200 -50 50 100 150 200 TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 500 30 25 100 100 µs ID, DRAIN CURRENT (A) ID, Drain Current [A] 0 o o TJ, Junction Temperature [ C] 1ms 10 10ms DC Operation in This Area is Limited by R DS(on) 1 * Notes : o 1. TC = 25 C 20 15 10 5 o 2. TJ = 150 C 3. Single Pulse 0.1 1 10 100 0 25 1000 50 75 100 125 150 o TC, Case Temperature [ C] VDS, Drain-SourceVoltage[V] Figure 11. Transient Thermal Response Curve Z θJC (t), Thermal Response 2 1 D = 0 .5 0 .2 0 .1 0 .1 0 .0 5 0 .0 2 0 .0 1 PDM t1 0 .0 1 s in g le p u ls e * N o te s : 1 . Z θJC (t) = 0 .5 0 C /W t2 M a x . 2 . D u ty F a c to r , D = t1/t2 3 . T 1 E -3 1 0 -5 1 0 -4 1 0 -3 t1, S q u a re FQB25N33 Rev. A 1 0 W a v e -2 P u ls e 4 1 0 J M - T C = -1 D u r a t io n P * Z D M 1 0 0 θ J C (t) 1 0 1 [s e c ] www.fairchildsemi.com FQB25N33 330V N-Channel MOSFET Typical Performance Characteristics (Continued) FQB25N33 330V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQB25N33 Rev. A 5 www.fairchildsemi.com FQB25N33 330V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQB25N33 Rev. A 6 www.fairchildsemi.com FQB25N33 330V N-Channel MOSFET FQB25N33 Rev. A 7 www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. 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THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 FQB25N33 Rev. A 8 www.fairchildsemi.com FQB25N33 330V N-Channel MOSFET TRADEMARKS