MMDJ3P03BJT Plastic Power Transistors SO−8 for Surface Mount Applications • Collector −Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc http://onsemi.com • High DC Current Gain — hFE = 125 (Min) @ IC = 0.8 Adc = 90 (Min) @ IC = 3.0 Adc • Low Collector −Emitter Saturation Voltage — • VCE(sat) = 0.24 Vdc (Max) @ IC = 1.2 Adc = 0.55 Vdc (Max) @ IC = 3.0 Adc Miniature SO−8 Surface Mount Package − Saves Board Space DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS, 3 AMPERES (SO−8) CASE 751−07 Style 16 Emitter−1 1 8 Collector−1 Base−1 2 7 Collector−1 Emitter−2 3 6 Collector−2 Base−2 4 5 Collector−2 Top View Pinout C E B C E B Schematic Preferred devices are ON Semiconductor recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 5 1 Publication Order Number: MMDJ3P03BJT/D MMDJ3P03BJT ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit VCB 45 Vdc VCEO 30 Vdc VEB ± 6.0 Vdc Collector Current — Continuous Collector Current — Peak IC 3.0 5.0 Adc Base Current — Continuous IB 1.0 Adc TJ, Tstg – 55 to + 150 _C Characteristic Symbol Max Unit Thermal Resistance − Junction to Ambient on 1″ sq. (645 sq. mm) Collector pad on FR−4 board material with one die operating. Thermal Resistance − Junction to Ambient on 0.012″ sq. (7.6 sq. mm) Collector pad on FR−4 board material with one die operating. RθJA Total Power Dissipation @ TA = 25_C mounted on 1″ sq. (645 sq. mm) Collector pad on FR−4 board material with one die operating. Derate above 25_C PD Maximum Temperature for Soldering TL Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS http://onsemi.com 2 100 _C/W 185 1.25 10 Watts mW/_C 260 _C MMDJ3P03BJT ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max 30 — — 6.0 — — — — — — 20 200 — — 10 — — — 0.15 — — 0.21 0.24 0.55 — — 1.25 — — 1.10 125 110 90 260 — — — — — — 100 150 — 135 — — 110 — Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0 Adc) VCEO(sus) Emitter−Base Voltage (IE = 50 mAdc, IC = 0 Adc) VEBO Collector Cutoff Current (VCE = 25 Vdc, RBE = 200 W) (VCE = 25 Vdc, RBE = 200 W, TJ = 125°C) ICER Emitter Cutoff Current (VBE = 5.0 Vdc) IEBO Vdc Vdc μAdc μAdc ON CHARACTERISTICS(1) Collector−Emitter Saturation Voltage (IC = 0.8 Adc, IB = 20 mAdc) (IC = 1.2 Adc, IB = 20 mAdc) (IC = 3.0 Adc, IB = 0.3 Adc) VCE(sat) Base−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.3 Adc) VBE(sat) Base−Emitter On Voltage (IC = 1.2 Adc, VCE = 4.0 Vdc) VBE(on) DC Current Gain (IC = 0.8 Adc, VCE = 1.0 Vdc) (IC = 1.2 Adc, VCE = 1.0 Vdc) (IC = 3.0 Adc, VCE = 1.0 Vdc) hFE Vdc Vdc Vdc — DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0 Adc, f = 1.0 MHz) Cob Input Capacitance (VEB = 8.0 Vdc) Cib Current−Gain — Bandwidth Product(2) (IC = 500 mA, VCE = 10 V, Ftest = 1.0 MHz) fT (1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%. (2) fT = |hFE| S ftest http://onsemi.com 3 pF pF MHz VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) VCE(sat) , COLLECTOR−EMITTER VOLTAGE (V) MMDJ3P03BJT 1.00 0.75 IC = 3.0 A 0.50 0.8 A 1.2 A 0.5 A 0.25 A 10 1.0 100 0.8 A 0.5 A 0.25 A 0 1000 100 1000 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 1. Collector Saturation Region Figure 2. Collector Saturation Region 1000 150°C HFE, DC CURRENT GAIN 150°C 25°C 100 −55 °C 25°C 100 −55 °C VCE = 4.0 V VCE = 1.0 V 10 10 0.1 10 1.0 0.1 1.0 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain Figure 4. DC Current Gain 10 1.0 10 IC/IB = 10 VBE(sat) 1.0 V, VOLTAGE (V) V, VOLTAGE (V) 10 1.0 1000 HFE, DC CURRENT GAIN IC = 1.2 A 0.125 0.25 0 0.25 VBE(sat) 0.1 0.1 VCE(sat) VCE(sat) IC/IB = 50 0.01 0.01 0.1 1.0 10 0.1 1.0 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. “On” Voltages Figure 6. “On” Voltages http://onsemi.com 4 10 MMDJ3P03BJT 1.2 1000 V, VOLTAGE (V) 0.8 C, CAPACITANCE (pF) −55 °C 25°C 150°C 0.4 Cob 100 VCE = 4.0 V 0 10 1.0 10 0.1 10 VR, REVERSE VOLTAGE (V) Figure 7. VBE(on) Voltage Figure 8. Output Capacitance 100 10 1000 0.5 ms VCE = 10 V ftest = 1.0 MHz TA = 25°C 100 1.0 5.0 ms 100 ms 0.1 0.01 BONDING WIRE LIMIT THERMAL LIMIT (SINGLE PULSE) SECONDARY BREAKDOWN LIMIT 0.001 10 0.1 10 1.0 0.1 1.0 10 IC, COLLECTOR CURRENT (A) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 9. Current−Gain Bandwidth Product Figure 10. Active Region Safe Operating Area PD, POWER DISSIPATION (W) 1.5 1.0 TA 0.5 0 50 100 There are two limitations on the power handling ability of a transistor: average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 10 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Secondary breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 12. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. 2.0 25 1.0 IC, COLLECTOR CURRENT (A) IC , COLLECTOR CURRENT (A) f t , CURRENT−GAIN BANDWIDTH PRODUCT 0.1 75 100 125 150 T, TEMPERATURE (°C) Figure 11. Power Derating http://onsemi.com 5 MMDJ3P03BJT r (t) , EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 D = 0.5 0.1 0.01 0.2 0.1 0.05 0.02 0.01 RθJA(t) = r(t) θJA θJA = 185°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TA = P(pk) θJA(t) SINGLE PULSE 0.001 0.0001 0.0001 0.001 0.01 0.1 1.0 t, TIME (seconds) Figure 12. Thermal Response http://onsemi.com 6 10 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 1000 MMDJ3P03BJT PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE W −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. A 8 5 S B 1 0.25 (0.010) M Y M 4 −Y− K G C N X 45 _ SEATING PLANE −Z− H 0.10 (0.004) D 0.25 (0.010) M Z Y S X M J S DIM A B C D G H J K M N S MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 STYLE 16: PIN 1. 2. 3. 4. 5. 6. 7. 8. INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0_ 8_ 0.010 0.020 0.228 0.244 EMITTER, DIE #1 BASE, DIE #1 EMITTER, DIE #2 BASE, DIE #2 COLLECTOR, DIE #2 COLLECTOR, DIE #2 COLLECTOR, DIE #1 COLLECTOR, DIE #1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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