APM3009N N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/70A , RDS(ON)=7mΩ(typ.) @ VGS=10V RDS(ON)=11mΩ(typ.) @ VGS=4.5V • Super High Dense Advanced Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged TO-220 , TO-252 and TO-263 Packages Applications 1 2 3 G D S Top View of TO-220, TO-252 and TO-263 • Power Management in Desktop Computer or DC/DC Converters. Ordering and Marking Information APM 3009N Package Code F : T O -2 2 0 G : T O -2 6 3 U : T O -2 5 2 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 2 5 ° C H a n d lin g C o d e TU : Tube TR : Tape & Reel H a n d lin g C o d e Tem p. Range Package Code A P M 3 0 0 9 N F /G /U : XXXXX A P M 3009N XXXXX Absolute Maximum Ratings Symbol - D a te C o d e (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 ID* Maximum Drain Current – Continuous 60 IDM Maximum Drain Current – Pulsed 110 Unit V A * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2002 1 www.anpec.com.tw APM3009N Absolute Maximum Ratings Cont. Symbol PD (TA = 25°C unless otherwise noted) Parameter Maximum Power Dissipation Rating TA=25°C TA=100°C TJ,TSTG RθJA RθJC Static BVDSS IDSS VGS(th) IGSS RDS(ON)a 50 TO-263 62.5 TO-252 20 TO-263 25 Maximum Operating and Storage Junction Temperature Thermal Resistance – Junction to Ambient Thermal Resistance – Junction to Case Electrical Characteristics Symbol TO-252 Parameter Drain-Source Breakdown V lt Gate Voltage Drain Zero Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage VSDa Dynamicb Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf Turn-off Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance -55 to 150 TO-252 50 TO-263 60 TO-252 2.5 TO-263 2 Unit W °C °C/W °C/W (TA = 25°C unless otherwise noted) Test Condition VGS=0V, IDS=250µA APM3009N Typ. Max. Min. 30 V VDS=24V , VGS=0V VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=35A VGS=4.5V, IDS=20A ISD=35A, VGS=0V VDS=15V, IDS=20A VGS=4.5V, VDD=15V, IDS=1A, VGEN=10V, RG= 0.2Ω VGS=0V VDS=15V Frequency =1.0MHz Unit 1 7 11 0.6 22 12.8 5 10 7 35 10 2400 500 240 1 µA 3 ±100 9 15 1.3 V nA mΩ V 28 nC 15 13 50 20 ns pF Notes a b : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2002 2 www.anpec.com.tw APM3009N Typical Characteristics Output Characteristics Transfer Characteristics 70 50 VDS=10V VGS=4,4.5,6,8,10V 60 50 IDS-Drain Current (A) IDS-Drain Current (A) 40 V GS=3V 40 30 20 V GS=2.5V 30 TJ=25°C 20 TJ=125°C 10 TJ=-55°C 10 0 0 1 2 3 4 5 6 7 8 9 0 1.0 10 VDS-Drain-to-Source Voltage (V) 1.5 2.0 3.5 4.0 On-Resistance vs. Drain Current 0.015 1.2 RDS(ON)-On-Resistance (Ω) IDS=250µA VGS(th)-Threshold Voltage (V) (Normalized) 3.0 VGS-Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.0 0.8 0.6 0.4 -50 2.5 -25 0 25 50 75 100 125 Tj-Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2002 VGS=10V 0.009 0.006 0.003 0.000 0 150 VGS=4.5V 0.012 10 20 30 40 50 60 70 80 90 100 ID-Drain Current (A) 3 www.anpec.com.tw APM3009N Typical Characteristics Cont. On-Resistance vs. Gate-to-Source Voltage On-Resistaence vs. Junction Temperature 0.030 1.6 VGS=10V IDS=35A 0.025 RDS(ON)-On Resistance (Ω) (Normalized) RDS (ON)-On-Resistance (Ω) IDS=35A 0.020 0.015 0.010 0.005 0.000 3 4 5 6 7 8 9 1.4 1.2 1.0 0.8 0.6 -50 10 Gate Voltage (V) -25 0 75 100 125 150 Gate Charge 10 10 VGS-Gate-to-Source Voltage (V) VGS=10V IDS=35A RDS(ON)-On Resistance (Ω) 50 Tj-Junction Temperature (°C) On-Resistaence vs. Junction Temperature 9 8 7 6 5 4 -50 25 -25 0 25 50 75 100 125 8 6 4 2 0 150 Tj-Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2002 VDS=15V IDS=20A 0 10 20 30 40 50 QG-Total-Gate Charge (nC) 4 www.anpec.com.tw APM3009N Typical Characteristics Cont. Capacitance Characteristics Source-Drain Diode Forward Voltage 3000 100 Ciss ISD-Source Current (A) C-Capacitance (pF) 2000 1000 Coss 500 Crss 10 TJ=125°C 1 TJ=-55°C TJ=25°C Frequency=1MHz 100 0.1 1 10 0.1 0.0 30 VDS-Drain-to-Source Voltage (V) 0.3 0.6 0.9 1.2 1.5 VSD-Source to Drain Voltage (V) Single Pulse Power Single Pulse Power TO-263 3000 2500 2500 2000 2000 Power (W) Power (W) TO-252 3000 1500 1500 1000 1000 500 500 0 -5 10 -4 10 -3 10 -2 10 -1 10 0 -5 10 0 10 -3 10 -2 10 -1 10 0 10 1 10 Time (sec) Time (sec) Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2002 -4 10 5 www.anpec.com.tw APM3009N Typical Characteristics Cont. Normalized Transient Thermal Transient Impedence, Junction to Ambient TO-252 Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 0 .1 D=0.1 D=0.05 D=0.02 1. Duty Cycle , D=t1/t2 2. Per Unit Base=RthJA=50°C/W 3. TJM-TA=PDMZthJA D=0.01 SINGLE PULSE 0 .0 1 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Normalized Transient Thermal Transient Impedence, Junction to Ambient TO-263 Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 0 .1 D=0.1 D=0.05 D=0.02 1. Duty Cycle , D=t1/t2 2. Per Unit Base=RthJA=62.5°C/W 3. TJM-TA=PDMZthJA D=0.01 SINGLE PULSE 0 .0 1 - 5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2002 6 www.anpec.com.tw APM3009N Package Informaion TO-252( Reference JEDEC Registration TO-252) E A b2 C1 L2 D H L1 L b C e1 Dim A A1 Mi ll im et er s Inc he s Min . Ma x . Min . Ma x . 2. 1 8 2. 3 9 0. 0 86 0. 0 94 A1 0. 8 9 1. 2 7 0. 0 35 0. 0 50 b 0. 5 08 0. 8 9 0. 0 20 0. 0 35 b2 5. 2 07 5. 4 61 0. 2 05 0. 2 15 C 0. 4 6 0. 5 8 0. 0 18 0. 0 23 C1 0. 4 6 0. 5 8 0. 0 18 0. 0 23 D 5. 3 34 6. 2 2 0. 2 10 0. 2 45 E 6. 3 5 6. 7 3 0. 2 50 0. 2 65 e1 3. 9 6 5. 1 8 0. 1 56 0. 2 04 H 9. 3 98 10 . 41 0. 3 70 0. 4 10 L 0. 5 1 L1 0. 6 4 1. 0 2 0. 0 25 0. 0 40 L2 0. 8 9 2. 0 32 0. 0 35 0. 0 80 Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2002 0. 0 20 7 www.anpec.com.tw APM3009N Packaging Information Cont. TO-263 ( Reference JEDEC Registration TO-263) E L2 E1 TERMINAL 4 D1 D L L3 A c2 R Φ1 L1 L4 DETAIL "A"ROTED c Millimeters Dim A b b2 c c2 D E L L1 L2 L3 Min. 4.06 0.51 1.14 1.14 8.64 9.65 14.60 2.24 1.02 1.20 0.38 TYP. Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2002 Inches Max. 4.83 1.016 1.651 Min. 0.160 0.02 0.045 1.40 9.65 10.54 15.88 2.84 2.92 1.78 0.045 0.340 0.380 0.575 0.090 0.040 0.050 8 0.015 TYP. Max. 0.190 0.040 0.065 0.055 0.380 0.415 0.625 0.110 0.112 0.070 www.anpec.com.tw APM3009N Package Information Cont. TO-220 ( Reference JEDEC Registration TO-220) D R Q b E e b1 e1 L1 L H1 A c F Dim A b1 b c D e e1 E F H1 J1 L L1 R Q Millimeters Min. 3.56 1.14 0.51 0.31 14.23 2.29 4.83 9.65 0.51 5.84 2.03 12.7 3.65 3.53 2.54 Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2002 J1 Inches Max. 4.83 1.78 1.14 1.14 16.51 2.79 5.33 10.67 1.40 6.86 2.92 14.73 6.35 4.09 3.43 9 Min. 0.140 0.045 0.020 0.012 0.560 0.090 0.190 0.380 0.020 0.230 0.080 0.500 0.143 0.139 0.100 Max. 0.190 0.070 0.045 0.045 0.650 0.110 0.210 0.420 0.055 0.270 0.115 0.580 0.250 0.161 0.135 www.anpec.com.tw APM3009N Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Average ramp-up rate(183°C to Peak) Preheat temperature 125 ± 25 °C) Temperature maintained above 183°C Time within 5 °C of actual peak temperature Peak temperature range Ramp-down rate Time 25 °C to peak temperature Convection or IR/ Convection 3 °C/second max. 120 seconds max. 60 ~ 150 seconds 10 ~ 20 seconds 220 +5/-0°C or 235 +5/-0°C 6 °C /second max. 6 minutes max. VPR 10 °C /second max. 60 seconds 215~ 219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bags Convection220 +5/-0°C VPR 215-219°C IR/Convection 220 +5/-0°C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2002 10 pkg. thickness < 2.5mm and pkg. volume < Convection 235 +5/-0°C VPR 235 +5/-0°C IR/Convection 235 +5/-0°C www.anpec.com.tw APM3009N Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimension t D P Po E P1 W Bo F Ao D1 Ko T2 J C A B T1 Application A B C J 2.5± 0.5 Po T1 16.4 +0.3 -0.2 P1 TO-252 330±3 100 ± 2 13 ± 0. 5 2 ± 0.5 Application F D D1 TO-252 7.5 ± 0.1 1.5± 0.1 Application A TO-263 T2 P E 8 ± 0.1 1.75± 0.1 Ao W 16 + 0.3 16 - 0.1 Bo Ko t 1.5+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05 B C J T1 T2 P E 13 ± 0. 5 2 ± 0.5 24 ± 4 2± 0.3 16 ± 0.1 1.75± 0.1 D D1 Po P1 Ao W 24 + 0.3 - 0.1 Bo 380±3 80 ± 2 Application F Ko t TO-263 11.5 ± 0.1 1.5 +0.1 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 10.8 ± 0.1 16.1± 0.1 5.2± 0.1 0.35±0.013 (mm) Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2002 11 www.anpec.com.tw APM3009N Cover Tape Dimensions Application TO- 252 TO- 263 Carrier Width 16 24 Cover Tape Width 13.3 21.3 Devices Per Reel 2500 1000 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2002 12 www.anpec.com.tw