Anpec APM3009NUC-TR N-channel enhancement mode mosfet Datasheet

APM3009N
N-Channel Enhancement Mode MOSFET
Features
•
Pin Description
30V/70A , RDS(ON)=7mΩ(typ.) @ VGS=10V
RDS(ON)=11mΩ(typ.) @ VGS=4.5V
•
Super High Dense Advanced Cell Design for
Extremely Low RDS(ON)
•
•
Reliable and Rugged
TO-220 , TO-252 and TO-263 Packages
Applications
1
2
3
G
D
S
Top View of TO-220, TO-252 and TO-263
•
Power Management in Desktop Computer or
DC/DC Converters.
Ordering and Marking Information
APM 3009N
Package Code
F : T O -2 2 0
G : T O -2 6 3
U : T O -2 5 2
O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 2 5 ° C
H a n d lin g C o d e
TU : Tube
TR : Tape & Reel
H a n d lin g C o d e
Tem p. Range
Package Code
A P M 3 0 0 9 N F /G /U :
XXXXX
A P M 3009N
XXXXX
Absolute Maximum Ratings
Symbol
- D a te C o d e
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
30
VGSS
Gate-Source Voltage
±20
ID*
Maximum Drain Current – Continuous
60
IDM
Maximum Drain Current – Pulsed
110
Unit
V
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.3 - May., 2002
1
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APM3009N
Absolute Maximum Ratings Cont.
Symbol
PD
(TA = 25°C unless otherwise noted)
Parameter
Maximum Power Dissipation
Rating
TA=25°C
TA=100°C
TJ,TSTG
RθJA
RθJC
Static
BVDSS
IDSS
VGS(th)
IGSS
RDS(ON)a
50
TO-263
62.5
TO-252
20
TO-263
25
Maximum Operating and Storage Junction Temperature
Thermal Resistance – Junction to Ambient
Thermal Resistance – Junction to Case
Electrical Characteristics
Symbol
TO-252
Parameter
Drain-Source Breakdown
V
lt Gate Voltage Drain
Zero
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Resistance
Diode Forward Voltage
VSDa
Dynamicb
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF) Turn-off Delay Time
Tf
Turn-off Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
-55 to 150
TO-252
50
TO-263
60
TO-252
2.5
TO-263
2
Unit
W
°C
°C/W
°C/W
(TA = 25°C unless otherwise noted)
Test Condition
VGS=0V, IDS=250µA
APM3009N
Typ.
Max.
Min.
30
V
VDS=24V , VGS=0V
VDS=VGS, IDS=250µA
VGS=±20V, VDS=0V
VGS=10V, IDS=35A
VGS=4.5V, IDS=20A
ISD=35A, VGS=0V
VDS=15V, IDS=20A
VGS=4.5V,
VDD=15V, IDS=1A,
VGEN=10V, RG= 0.2Ω
VGS=0V
VDS=15V
Frequency =1.0MHz
Unit
1
7
11
0.6
22
12.8
5
10
7
35
10
2400
500
240
1
µA
3
±100
9
15
1.3
V
nA
mΩ
V
28
nC
15
13
50
20
ns
pF
Notes
a
b
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
: Guaranteed by design, not subject to production testing
Copyright  ANPEC Electronics Corp.
Rev. A.3 - May., 2002
2
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APM3009N
Typical Characteristics
Output Characteristics
Transfer Characteristics
70
50
VDS=10V
VGS=4,4.5,6,8,10V
60
50
IDS-Drain Current (A)
IDS-Drain Current (A)
40
V GS=3V
40
30
20
V GS=2.5V
30
TJ=25°C
20
TJ=125°C
10
TJ=-55°C
10
0
0
1
2
3
4
5
6
7
8
9
0
1.0
10
VDS-Drain-to-Source Voltage (V)
1.5
2.0
3.5
4.0
On-Resistance vs. Drain Current
0.015
1.2
RDS(ON)-On-Resistance (Ω)
IDS=250µA
VGS(th)-Threshold Voltage (V)
(Normalized)
3.0
VGS-Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.0
0.8
0.6
0.4
-50
2.5
-25
0
25
50
75
100
125
Tj-Junction Temperature (°C)
Copyright  ANPEC Electronics Corp.
Rev. A.3 - May., 2002
VGS=10V
0.009
0.006
0.003
0.000
0
150
VGS=4.5V
0.012
10
20
30
40
50
60
70
80
90 100
ID-Drain Current (A)
3
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APM3009N
Typical Characteristics Cont.
On-Resistance vs. Gate-to-Source Voltage
On-Resistaence vs. Junction Temperature
0.030
1.6
VGS=10V
IDS=35A
0.025
RDS(ON)-On Resistance (Ω)
(Normalized)
RDS (ON)-On-Resistance (Ω)
IDS=35A
0.020
0.015
0.010
0.005
0.000
3
4
5
6
7
8
9
1.4
1.2
1.0
0.8
0.6
-50
10
Gate Voltage (V)
-25
0
75
100
125
150
Gate Charge
10
10
VGS-Gate-to-Source Voltage (V)
VGS=10V
IDS=35A
RDS(ON)-On Resistance (Ω)
50
Tj-Junction Temperature (°C)
On-Resistaence vs. Junction Temperature
9
8
7
6
5
4
-50
25
-25
0
25
50
75
100
125
8
6
4
2
0
150
Tj-Junction Temperature (°C)
Copyright  ANPEC Electronics Corp.
Rev. A.3 - May., 2002
VDS=15V
IDS=20A
0
10
20
30
40
50
QG-Total-Gate Charge (nC)
4
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APM3009N
Typical Characteristics Cont.
Capacitance Characteristics
Source-Drain Diode Forward Voltage
3000
100
Ciss
ISD-Source Current (A)
C-Capacitance (pF)
2000
1000
Coss
500
Crss
10
TJ=125°C
1
TJ=-55°C
TJ=25°C
Frequency=1MHz
100
0.1
1
10
0.1
0.0
30
VDS-Drain-to-Source Voltage (V)
0.3
0.6
0.9
1.2
1.5
VSD-Source to Drain Voltage (V)
Single Pulse Power
Single Pulse Power
TO-263
3000
2500
2500
2000
2000
Power (W)
Power (W)
TO-252
3000
1500
1500
1000
1000
500
500
0
-5
10
-4
10
-3
10
-2
10
-1
10
0
-5
10
0
10
-3
10
-2
10
-1
10
0
10
1
10
Time (sec)
Time (sec)
Copyright  ANPEC Electronics Corp.
Rev. A.3 - May., 2002
-4
10
5
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APM3009N
Typical Characteristics Cont.
Normalized Transient Thermal Transient Impedence, Junction to Ambient
TO-252
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle=0.5
D=0.2
0 .1
D=0.1
D=0.05
D=0.02
1. Duty Cycle , D=t1/t2
2. Per Unit Base=RthJA=50°C/W
3. TJM-TA=PDMZthJA
D=0.01
SINGLE PULSE
0 .0 1
-5
10
10
-4
10
-3
10
-2
10
-1
10
0
Square Wave Pulse Duration (sec)
Normalized Transient Thermal Transient Impedence, Junction to Ambient
TO-263
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle=0.5
D=0.2
0 .1
D=0.1
D=0.05
D=0.02
1. Duty Cycle , D=t1/t2
2. Per Unit Base=RthJA=62.5°C/W
3. TJM-TA=PDMZthJA
D=0.01
SINGLE PULSE
0 .0 1 - 5
10
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Square Wave Pulse Duration (sec)
Copyright  ANPEC Electronics Corp.
Rev. A.3 - May., 2002
6
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APM3009N
Package Informaion
TO-252( Reference JEDEC Registration TO-252)
E
A
b2
C1
L2
D
H
L1
L
b
C
e1
Dim
A
A1
Mi ll im et er s
Inc he s
Min .
Ma x .
Min .
Ma x .
2. 1 8
2. 3 9
0. 0 86
0. 0 94
A1
0. 8 9
1. 2 7
0. 0 35
0. 0 50
b
0. 5 08
0. 8 9
0. 0 20
0. 0 35
b2
5. 2 07
5. 4 61
0. 2 05
0. 2 15
C
0. 4 6
0. 5 8
0. 0 18
0. 0 23
C1
0. 4 6
0. 5 8
0. 0 18
0. 0 23
D
5. 3 34
6. 2 2
0. 2 10
0. 2 45
E
6. 3 5
6. 7 3
0. 2 50
0. 2 65
e1
3. 9 6
5. 1 8
0. 1 56
0. 2 04
H
9. 3 98
10 . 41
0. 3 70
0. 4 10
L
0. 5 1
L1
0. 6 4
1. 0 2
0. 0 25
0. 0 40
L2
0. 8 9
2. 0 32
0. 0 35
0. 0 80
Copyright  ANPEC Electronics Corp.
Rev. A.3 - May., 2002
0. 0 20
7
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APM3009N
Packaging Information Cont.
TO-263 ( Reference JEDEC Registration TO-263)
E
L2
E1
TERMINAL 4
D1
D
L
L3
A
c2
R
Φ1
L1
L4
DETAIL "A"ROTED
c
Millimeters
Dim
A
b
b2
c
c2
D
E
L
L1
L2
L3
Min.
4.06
0.51
1.14
1.14
8.64
9.65
14.60
2.24
1.02
1.20
0.38 TYP.
Copyright  ANPEC Electronics Corp.
Rev. A.3 - May., 2002
Inches
Max.
4.83
1.016
1.651
Min.
0.160
0.02
0.045
1.40
9.65
10.54
15.88
2.84
2.92
1.78
0.045
0.340
0.380
0.575
0.090
0.040
0.050
8
0.015 TYP.
Max.
0.190
0.040
0.065
0.055
0.380
0.415
0.625
0.110
0.112
0.070
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APM3009N
Package Information Cont.
TO-220 ( Reference JEDEC Registration TO-220)
D
R
Q
b
E
e
b1
e1
L1
L
H1
A
c
F
Dim
A
b1
b
c
D
e
e1
E
F
H1
J1
L
L1
R
Q
Millimeters
Min.
3.56
1.14
0.51
0.31
14.23
2.29
4.83
9.65
0.51
5.84
2.03
12.7
3.65
3.53
2.54
Copyright  ANPEC Electronics Corp.
Rev. A.3 - May., 2002
J1
Inches
Max.
4.83
1.78
1.14
1.14
16.51
2.79
5.33
10.67
1.40
6.86
2.92
14.73
6.35
4.09
3.43
9
Min.
0.140
0.045
0.020
0.012
0.560
0.090
0.190
0.380
0.020
0.230
0.080
0.500
0.143
0.139
0.100
Max.
0.190
0.070
0.045
0.045
0.650
0.110
0.210
0.420
0.055
0.270
0.115
0.580
0.250
0.161
0.135
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APM3009N
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
temperature
Reference JEDEC Standard J-STD-020A APRIL 1999
Peak temperature
183°C
Pre-heat temperature
Time
Classification Reflow Profiles
Average ramp-up rate(183°C to Peak)
Preheat temperature 125 ± 25 °C)
Temperature maintained above 183°C
Time within 5 °C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25 °C to peak temperature
Convection or IR/
Convection
3 °C/second max.
120 seconds max.
60 ~ 150 seconds
10 ~ 20 seconds
220 +5/-0°C or 235 +5/-0°C
6 °C /second max.
6 minutes max.
VPR
10 °C /second max.
60 seconds
215~ 219°C or 235 +5/-0°C
10 °C /second max.
Package Reflow Conditions
pkg. thickness ≥ 2.5mm
and all bags
Convection220 +5/-0°C
VPR 215-219°C
IR/Convection 220 +5/-0°C
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm
Copyright  ANPEC Electronics Corp.
Rev. A.3 - May., 2002
10
pkg. thickness < 2.5mm and pkg.
volume <
Convection 235 +5/-0°C
VPR 235 +5/-0°C
IR/Convection 235 +5/-0°C
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APM3009N
Reliability test program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimension
t
D
P
Po
E
P1
W
Bo
F
Ao
D1
Ko
T2
J
C
A
B
T1
Application
A
B
C
J
2.5± 0.5
Po
T1
16.4 +0.3
-0.2
P1
TO-252
330±3
100 ± 2
13 ± 0. 5
2 ± 0.5
Application
F
D
D1
TO-252
7.5 ± 0.1
1.5± 0.1
Application
A
TO-263
T2
P
E
8 ± 0.1
1.75± 0.1
Ao
W
16 + 0.3
16 - 0.1
Bo
Ko
t
1.5+ 0.25
4.0 ± 0.1
2.0 ± 0.1
6.8 ± 0.1
10.4± 0.1
2.5± 0.1
0.3±0.05
B
C
J
T1
T2
P
E
13 ± 0. 5
2 ± 0.5
24 ± 4
2± 0.3
16 ± 0.1
1.75± 0.1
D
D1
Po
P1
Ao
W
24 + 0.3
- 0.1
Bo
380±3
80 ± 2
Application
F
Ko
t
TO-263
11.5 ± 0.1
1.5 +0.1
1.5± 0.25
4.0 ± 0.1
2.0 ± 0.1 10.8 ± 0.1 16.1± 0.1
5.2± 0.1 0.35±0.013
(mm)
Copyright  ANPEC Electronics Corp.
Rev. A.3 - May., 2002
11
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APM3009N
Cover Tape Dimensions
Application
TO- 252
TO- 263
Carrier Width
16
24
Cover Tape Width
13.3
21.3
Devices Per Reel
2500
1000
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. A.3 - May., 2002
12
www.anpec.com.tw
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