Cymbet CBC34123-M5C-TR1 Spi real-time clock/calendar with integrated backup power Datasheet

Preliminary
CBC34123 EnerChip™ RTC
SPI Real-Time Clock/Calendar with Integrated Backup Power
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Integrated rechargeable solid state battery with
power-fail detect and automatic switchover, providing greater than 30 hours of RTC backup
Smallest commercially available RTC with integrated backup power in compact 5mm x 5mm
1.4mm QFN package
Temperature compensated charge control
Integrated EnerChip™ recharged at VDD > 2.5V
SMT assembly - lead-free reflow solder tolerant
Real time clock provides year, month, day, weekday, hours, minutes, and seconds based on a
32.768 kHz quartz crystal
Resolution: seconds to years
Watchdog functionality
Freely programmable timer and alarm with interrupt capability
3-line SPI-bus with separate, but combinable
data input and output
Integrated oscillator load capacitors for CL = 7 pF
Internal Power-On Reset (POR)
Open-drain interrupt and clock output pins
Programmable offset register for frequency
adjustment
Eco-friendly, RoHS compliant - tested
Applications
Wireless sensors and RFID tags and other
powered, low duty cycle applications.
• Power bridging to provide uninterruptible RTC
function during exchange of main batteries.
• Consumer appliances that have real-time
clocks; provides switchover power from main
supply to backup battery.
• Business and industrial systems such as:
network routers, point-of-sale terminals, singleboard computers, test equipment, multi-function
printers, industrial controllers, and utility meters.
• Time keeping application
• Battery powered devices
• Metering
• High duration timers
• Daily alarms
• Low standby power applications
•
5mm x 5mm x 1.4mm 16-QFN Package
General Description
The EnerChip RTC CBC34123-M5C combines a
Real-Time Clock (RTC) and calendar optimized
for low power applications with an integrated
rechargeable solid state backup battery and all power
management functions. The EnerChip RTC ensures
a seamless transition from main power to backup
power in the event of power loss. The integrated
power management circuit ensures thousands of
charge-discharge cycles from the integrated EnerChip
and manages battery charging, discharge cutoff,
power switchover, and temperature compensation
to maximize the service life of the device. The
CBC34123 provides greater than 30 hours of backup
time in the event main power is interrupted. Typical
blackout times are less than 4 hours. Longer backup
time can be achieved by adding an external EnerChip
to the VCHG pin. The EnerChip has extremely low
self-discharge, recharges quickly, is non-flammable,
and RoHS-compliant. The EnerChip is charged
automatically anytime VDD is above 2.5V.
Data is transferred serially via a Serial Peripheral
Interface (SPI-bus) with a maximum data rate of 6.25
Mbit/s. Alarm and timer functions provide the option
to generate a wake-up signal on an interrupt pin. An
offset register allows fine tuning of the clock.
Figure 1: CBC34123 Pin-out Diagram
©2013-2015 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
DS-72-31 V.13
Page 1 of 14
Preliminary
CBC34123 EnerChip™ RTC
16
OSCI
1
OSCO
OSCILLATOR
32.768 kHz
DIVIDER
CLOCKOUT
CLKOE
11
CLKOUT
12
INT
3
MONITOR
OFFSET FUNCTION
0Dh
6
VCHG
7
VEC
14 RESET
15
ENERCHIP
AND
CHARGER
Offset_register
TIMER FUNCTION
0Eh
Timer_clkout
0Fh
Countdown_timer
EN
CONTROL
2
TEST
13
VDD
5
VSS
POWERON
RESET
WATCH
DOG
8
SDO
9
SDI
10
SCL
4
CE
SPI
INTERFACE
00h
Control_1
01h
Control_2
02h
Seconds
03h
Minutes
04h
Hours
TIME
05h
Days
06h
Weekdays
07h
Months
08h
üü
ALARM FUNCTION
09h
Minute_alarm
0Ah
Hour_alarm
0Bh
Day_alarm
0Ch
Weekday_alarm
INTERRUPT
Figure 2: CBC34123 Block Diagram with Registers
Figure 3: Internal Schematic of CBC34123 EnerChip RTC
©2013-2015 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
DS-72-31 V.13
Page 2 of 14
Preliminary
CBC34123 EnerChip™ RTC
CBC34123 Input/Output Descriptions
Pin Number
Label
Description
1
OSCO
2
TEST
3
4
5
INT/
CE
VSS
6
VCHG
7
VEC
8
SDO
9
10
SDI
SCL
11
CLKOE
12
CLKOUT
13
VDD
14
RESET/
Oscillator output; high-impedance node; minimize wire length between
quartz and package
Test pin; not user accessible; connect to VSS or leave floating (internally
pulled down)
Interrupt output (open-drain; active LOW)
Chip enable input (active HIGH) with internal pull down
Ground
4.1V (typical) charging source - connect to VEC and/or optional EnerChip(s)
for extended backup time
Positive terminal of integrated thin film battery - connect only to VCHG via
PCB trace
Serial data output, push-pull; high-impedance when not driving; can be connected to SDI for single wire data line
Serial data input; may float when CE is inactive
Serial clock input; may float when CE is inactive
CLKOUT enable or disable pin; enable is active HIGH; connect to VSS for low
power operation
Clock output (open-drain)
Supply voltage; positive or negative steps in VDD can affect oscillator performance; recommend 100nF decoupling close to the device
Output signal indicating RTC is operating in backup power mode
15
EN
Charge pump enable; activates VCHG 4.1V (typ.) charging source
16
OSCI
Oscillator input; high-impedance node; minimize wire length between quartz
and package
Package
Dimensions
(mm)
Figure 4: CBC34123 Package (left: top view, looking through package; right: pad dimensions)
EnerChip Properties
Energy capacity (typical): Recharge time to 80%:
Charge/discharge cycles: Operating temperature:
Storage temperature:
Minimum VDD to charge EnerChip:
5µAh
10 minutes
>5000 to 10% depth-of-discharge
-30°C to +70°C
-40°C to +125°C
2.5V
©2013-2015 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
DS-72-31 V.13
Page 3 of 14
Preliminary
CBC34123 EnerChip™ RTC
Absolute Maximum Ratings
PARAMETER / PIN
CONDITION
MIN
TYPICAL
MAX
UNITS
GND - 0.3
GND - 0.3
-
6.0
V
ENABLE Input Voltage
25°C
25°C
-
VDD+0.3
V
VEC
25°C
3.0
-
4.15
V
25°C
3.0
-
4.15
V
25°C
GND - 0.3
-
2.7
V
VDD with respect to GND
(1)
VCHG
(1)
RESET Output Voltage
INT/, CE, TEST, OSCI, OSCO, SDO,
SDI, SCL, CLKOE, CLKOUT
(1)
See NXP PCF2123 Data Sheet
No external connections to these pins are allowed, except parallel EnerChips for extended backup time.
Integrated EnerChip Thin Film Battery Operating Characteristics
PARAMETER
CONDITION
MIN
TYPICAL
MAX
UNITS
Non-recoverable
-
2.5
-
% per year
Recoverable
-
1.5
-
% per year
Operating Temperature
-
-30
25
+70
°C
Storage Temperature
-
-40
-
+125 (2)
°C
10% depth-of-discharge
5000
-
-
cycles
50% depth-of discharge
1000
-
-
cycles
Self-Discharge (5 yr. average)
Recharge Cycles
(to 80% of rated
capacity)
25°C
40°C
Recharge Time (to 80% of rated
capacity; 4.1V charge; 25°C) (3)
Capacity (see Figure 5)
(1)
10% depth-of-discharge
2500
-
-
cycles
50% depth-of-discharge
500
-
-
cycles
Charge cycle 2
-
11
22
Charge cycle 1000
-
45
70
40nA discharge; 25°C
5
-
-
(1)
First month recoverable self-discharge is 5% average.
(2)
Storage temperature is for uncharged EnerChip CC device.
(3)
EnerChip charging time increases approximately 2x per 10°C decrease in temperature.
minutes
µAh
Figure 5: Typical Discharge Characteristics of the CBC005 EnerChip Within the CBC34123
Note: All specifications contained within this document are subject to change without notice.
©2013-2015 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
DS-72-31 V.13
Page 4 of 14
Preliminary
CBC34123 EnerChip™ RTC
POWER SUPPLY CURRENT CHARACTERISTICS OF INTEGRATED CBC910 POWER
MANAGEMENT CIRCUIT ONLY
Ta = -20ºC to +70ºC
CHARACTERISTIC
Quiescent Current
(CBC910 power
management circuit
only; VDD > VRESET ; RTC
current not included)
EnerChip Cutoff Current
(IQBATON adds to RTC
current when in backup
mode)
SYMBOL
CONDITION
ENABLE=GND
IQ
ENABLE=VDD
MIN
MAX
UNITS
VDD=3.3V
-
3.5
µA
VDD=5.5V
-
6.0
µA
VDD=3.3V
-
35
µA
VDD=5.5V
-
38
µA
IQBATOFF
VBAT < VBATCO,
VOUT=0
-
0.5
nA
IQBATON
VBAT > VBATCO,
IOUT=0
-
42
nA
INTERFACE LOGIC SIGNAL CHARACTERISTICS
VDD = 2.5V to 5.5V, Ta = -20ºC to +70ºC
CHARACTERISTIC
SYMBOL
CONDITION
MIN
MAX
UNITS
VIH
VIL
-
VDD - 0.5
-
Volts
High Level Input Voltage
Low Level Input Voltage
-
-
0.5
Volts
VDD 0.04V (1)
-
Volts
High Level Output Voltage
VOH
VDD>VTH (see Figures 4
and 5) IL=10µA
Low Level Output Voltage
VOL
IL = -100µA
-
0.3
Volts
Logic Input Leakage Current
IIN
0<VIN<VDD
-1.0
+1.0
nA
(1)
RESET tracks VDD; RESET = VDD - (IOUT x ROUT).
RESET SIGNAL AC/DC CHARACTERISTICS
VDD = 2.5V to 5.5V, Ta = -20ºC to +70ºC
CHARACTERISTIC
VDD Rising to RESET
Rising
VDD Falling to RESET
Falling
TRIP Voltage
VDD Rising
RESET Hysteresis
Voltage
(VDD to RESET)
SYMBOL
CONDITION
MIN
MAX
UNITS
tRESETH
VDD rising from 2.8V TO 3.1V
in <10µs
60
200
ms
tRESETL
VDD falling from 3.1V to 2.8V
in <100ns
0.5
2
µs
VRESET
VMODE=GND
2.85
3.15
V
VHYST
VMODE=GND
45
75
mV
©2013-2015 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
DS-72-31 V.13
Page 5 of 14
Preliminary
CBC34123 EnerChip™ RTC
CHARGE PUMP CHARACTERISTICS (PERTAINS TO INTEGRATED CBC910 POWER MANAGEMENT CIRCUIT)
VDD = 2.5V to 5.5V, Ta = -20ºC to +70ºC
CHARACTERISTIC
ENABLE=VDD to Charge
Pump Active
ENABLE Falling to
Charge Pump Inactive
SYMBOL
tCPON
CONDITION
MIN
MAX
UNITS
60
80
µs
0
1
µs
-
120
KHz (1)
150
300
Ω
ENABLE to 3rd charge pump
pulse, VDD=3.3V
tCPOFF
-
Charge Pump Frequency
fCP
Charge Pump
Resistance
RCP
Delta VBAT, for IBAT charging
current of 1µA to 100µA
CFLY=0.1µF, CBAT=1.0µF
VCHG Output Voltage
VCP
CFLY=0.1µF, CBAT=1.0µF,
IOUT=1µA, Temp=+25ºC
4.065
4.150
V
VCHG Temp. Coefficient
TCCP
IOUT=1µA, Temp=+25ºC
-2.0
-2.4
mV/ºC
ICP
IBAT=1mA
CFLY=0.1µF, CBAT=1.0µF
1.0
-
mA
ENABLE=VDD
2.5
-
V
Charge Pump Current
Drive
Charge Pump on Voltage
(1)
VENABLE
fCP = 1/tCPPER
ADDITIONAL CHARACTERISTICS
Ta = -20ºC to +70ºC
CHARACTERISTIC
VBAT Cutoff Threshold
SYMBOL
VBATCO
Cutoff Temp. Coefficient
TCCO
VBAT Cutoff Delay Time
tCOOFF
CONDITION
LIMITS
UNITS
MIN
MAX
2.75
3.25
V
+1
+2
mV/ºC
18
-
ms
IOUT=1µA
VBAT from 40mV above to
20mV below VBATCO
IOUT=1µA
Note: All specifications contained within this document are subject to change without notice
©2013-2015 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
DS-72-31 V.13
Page 6 of 14
Preliminary
CBC34123 EnerChip™ RTC
Important Reference Documents
For complete specifications of the integrated PCF2123 Real-Time Clock, see here:
http://www.cymbet.com/pdfs/NXP RTC PCF2123.pdf
For complete specifications of the Cymbet 5µAh EnerChip and integrated power management circuit, see here:
http://www.cymbet.com/pdfs/DS-72-41.pdf.
For guidelines regarding crystal selection and other important information pertaining to the PCF2123, see
UM10301 - User Manual for NXP Real Time Clocks, located here:
http://www.nxp.com/documents/user_manual/UM10301.pdf
Functional Description of Integrated CBC34123 Real-Time Clock
The CBC34123 contains 16 8-bit registers with an auto-incrementing address counter, an on-chip 32.768 kHz
oscillator with two integrated load capacitors, a frequency divider which provides the source clock for the Real
Time Clock (RTC), a programmable clock output, and a 6.25 Mbit/s SPI-bus. An offset register allows fine tuning
of the clock.
All 16 registers are designed as addressable 8-bit parallel registers although not all bits are implemented.
• The first two registers (memory address 00h and 01h) are used as control registers.
• The memory addresses 02h through 08h are used as counters for the clock function (seconds up to years). The
registers Seconds, Minutes, Hours, Days, Weekdays, Months, and Years are all coded in Binary Coded
Decimal (BCD) format. When one of the RTC registers is written or read the contents of all counters are
frozen. Therefore, faulty writing or reading of the clock and calendar during a carry condition is prevented.
• Addresses 09h through 0Ch define the alarm condition.
• Address 0Dh defines the offset calibration.
• Address 0Eh defines the clock out and timer mode.
• Address registers 0Eh and 0Fh are used for the countdown timer function. The countdown timer has four
selectable source clocks allowing for countdown periods in the range from 244 ms up to four hours. There
are also two pre-defined timers which can be used to generate an interrupt once per second or once per
minute. These are defined in register Control_2 (01h).
Low Power Operation
Minimum power operation will be achieved by reducing the number and frequency of switching signals inside the
IC, i.e., low frequency timer clocks and a low frequency CLKOUT will result in lower operating power. A second
prime consideration is the series resistance Rs of the quartz used.
Power Consumption with Respect to Quartz Series Resistance
The series resistance acts as a loss element. Low RS will reduce current consumption further.
©2013-2015 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
DS-72-31 V.13
Page 7 of 14
Preliminary
CBC34123 EnerChip™ RTC
CBC34123 Register Overview
16 registers are available. The time registers are encoded in the Binary Coded Decimal (BCD) format to simplify
application use. Other registers are either bit-wise or standard binary.
Bit positions labeled as ‘-’ are not implemented and will return a ‘0’ when read. The bit position labeled as ‘--’ is
not implemented and will return a ‘0’ or ‘1’ when read. Bit positions labeled with N should always be written with
logic ‘0’ (1).
Address
Register name
Bit
7
6
5
4
3
2
1
0
Control and status registers
00h
Control_1
EXT_TEST N
STOP
SR
N
12_24
CIE
N
01h
Control_2
MI
SI
MSF
TI_TP
AF
TF
AIE
TIE
Time and date registers
02h
Seconds
OS
SECONDS (0 to 59)
03h
Minutes
--
MINUTES (0 to 59)
04h
Hours
-
-
AMPM
HOURS (1 to 12) in 12 h mode
HOURS (0 to 23) in 24 h mode
05h
Days
-
-
DAYS (1 to 31)
06h
Weekdays
-
-
-
-
07h
Months
-
-
-
MONTHS (1 to 12)
08h
Years
YEARS (0 to 99)
-
WEEKDAYS (0 to 6)
Alarm registers
09h
Minute_alarm
AE_M
MINUTE_ALARM (0 to 59)
0Ah
Hour_alarm
AE_H
-
AMPM
HOUR_ALARM (1 to 12) in 12 h mode
HOUR_ALARM (0 to 23) in 24 h mode
0Bh
Day_alarm
AE_D
-
DAY_ALARM (1 to 31)
0Ch
Weekday_alarm
AE_W
-
-
MODE
OFFSET[6:0]
COF[2:0]
-
-
WEEKDAY_ALARM (0 to
6)
TE
-
Offset register
0Dh
Offset_register
Timer registers
0Eh
Timer_clkout
-
0Fh
Countdown_timer
COUNTDOWN_TIMER[7:0]
[1]
CTD[1:0]
Except in the case of software reset, see Section 8.3.1.1.
©2013-2015 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
DS-72-31 V.13
Page 8 of 14
Preliminary
CBC34123 EnerChip™ RTC
Typical CBC34123 EnerChip RTC Connection to Microcontroller
Figure 5 illustrates how the CBC34123 is typically connected to a microcontroller (MCU) in a system. For
simplicity, only the MCU lines routed to/from the CBC34123 are shown. The I/O line from the MCU to the EN pin
of the CBC34123 is optional for reducing power consumption of the CBC34123. The EN pin can be forced low by
the MCU when the integrated EnerChip does not need to be charged. If EN is not connected to the MCU or
otherwise controlled externally, it must be tied to VDD to ensure the EnerChip is charged when VDD is valid.
Figure 5: Typical Application Schematic Showing MCU Connections to CBC34123
©2013-2015 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
DS-72-31 V.13
Page 9 of 14
Preliminary
CBC34123 EnerChip™ RTC
GUIDELINES FOR HANDLING ENERCHIP RTC DEVICES
The EnerChip™ RTC with an integrated thin film, solid state battery features all solid state construction, are
packaged in standard integrated circuit packages, and can be reflow soldered for high volume PCB assembly.
The CBC34123 EnerChip RTC is considered an MSL-3 rated device for storage and handling purposes.
Device Handling & Storage
• EnerChip RTCs are packaged and shipped in tubes or reels in moisture barrier bags, and are sensitive
to moisture absorption. They must be kept in the sealed bag until ready for board mounting and reflow
soldering.
• If the EnerChip RTCs are removed from the sealed bag more than 168 hours prior to board mounting,
they must be baked at 125°C for a minimum of 24 hours prior to board mounting and reflow soldering.
• Store the EnerChip RTCs in an environment where the temperature and humidity do not undergo large
fluctuations. Store at 10°C to 30°C and at less than 60% relative humidity.
Electrostatic Discharge (ESD)
• The EnerChip RTCs are sensitive to ESD damage prior to receiving a battery charge cycle. Therefore,
adherence to ESD prevention guidelines is required.
• Remove RTC devices from protective shipping and storage containers at approved ESD workstations
only.
• All equipment used to process the devices must be configured to minimize the generation of static
charges. This includes soldering and de-soldering equipment and tools, pick-and-place equipment, test
equipment, and all other tools and equipment used to handle or process the devices.
• Failure to observe these precautions can lead to premature failure and shall void product warranty.
Other Use Guidelines
• Do not connect the EnerChip RTC to other types of batteries.
• To increase battery life, avoid placing the EnerChip RTC near devices that would generate heat
exceeding the 70°C operating limit.
DO NOT HAND SOLDER ENERCHIP RTC DEVICES
When soldering an individual uncharged EnerChip RTC, a QFN capable soldering station with temperature control should be used. It is very important to be able to control the solder temperature and time when soldering
an EnerChip RTC.
ENERCHIP ASSEMBLY REPAIR TECHNIQUES
For the EnerChip RTC QFN package, use a hot air rework station to remove a defective or misplaced EnerChip
package. If there are other EnerChips in the vicinity of the EnerChip being replaced, use proper heat shielding
to protect the adjacent EnerChip package from the heat source and turn off any heat source that would otherwise be used to heat the bottom of the board during removal of the EnerChip. This will prevent the adjacent
EnerChip(s) from being damaged during the rework procedure.
©2013-2015 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
DS-72-31 V.13
Page 10 of 14
Preliminary
CBC34123 EnerChip™ RTC
SMT PROCESS
The EnerChip RTCs are packaged in standard surface mount packages. Refer to the solder paste material data
sheets for attachment of the package to a PCB using solder reflow processes. Ensure that the solder reflow
oven is programmed to the correct temperature profile prior to assembling the EnerChip RTC on the PCB.
REFLOW SOLDERING
•
•
•
The maximum number of times an uncharged EnerChip RTC may be reflow soldered is three times.
The surface temperature of the EnerChip RTC package must not exceed 240°C.
The recommended solder reflow profile is shown in Figure 6 below; refer to the table for time and
temperature requirements. Whenever possible, use lower temperature solder reflow profiles.
TP
TL
Parameter
Sn/Pb
Pb-free
Soak temperature, min, TSMIN
100°C
150°C
Soak temperature, max, TSMAX
Soak time, max, tS
Max ramp-up rate (TL to TP)
Liquidous temperature, TL
150°C
2 min
3°C/sec
183°C
200°C
2 min
3°C/sec
217°C
60-150 sec
60-150 sec
220°C
240°C
20 sec
6°C/sec
6 min max
30 sec
6°C/sec
8 min max
Time tL maintained above TL
Max peak temperature, TP
Max time tP at peak temperature TP
Max ramp-down rate (TP to TL)
Time 25°C to peak temperature
Figure 6: EnerChip RTC Solder Reflow Profile and Specification Table
©2013-2015 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
DS-72-31 V.13
Page 11 of 14
Preliminary
CBC34123 EnerChip™ RTC
GUIDELINES FOR IN-CIRCUIT TESTING OF THE INTERNAL ENERCHIP BATTERY
It is very important to verify EnerChip device connectivity after reflow solder process. It is important to read
and understand the proper test flow for the EnerChip devices. Following the proper test method will ensure
reworkability of boards.
Precautions and Important Processes
After assembly on a printed circuit board, the CBC34123 integrated solid state battery is in an uncharged state.
It is important that the CBC34123 battery remain untested and uncharged until the last step of an in-circuit
system test so that if other components fail test and need to be replaced, the CBC34123 will still be in a reflowsolderable state. The crystal and RTC in the CBC34123 can be tested independently from the battery at the
same time the other system elements are being tested.
There are two considerations when doing post-assembly testing of the user’s circuit board:
1.
When performing circuit testing, short the internal EnerChip battery to GND by forcing the VCHG/VEC pins
to ground potential during testing of the EnerChip RTC and other circuit functions. This will prevent the
integrated EnerChip from accumulating charge while the CBC34123 VDD and EN pins are active.
2. When the overall circuit testing is complete, it is permissible to verify connection to the EnerChip battery
and 4.1V output of the charge pump at the VCHG pin by forcing the CBC34123 VDD and EN pins high for
NO MORE THAN 3 SECONDS. Activating the charge pump for longer than 3 seconds will put sufficient
charge into the EnerChip that board level rework is no longer permitted without destroying the EnerChip.
Factory In-Circuit EnerChip Post Assembly Test Steps
CBC34123 In-Circuit Test Procedure
1. In order to keep the CBC34123 battery from charging during testing, apply GND using an in-circuit test bed
pin or other shorting method to the VCHG and VEC pins (6 and 7, respectively) that are normally tied together on the PCB. Alternatively, the EN pin on the CBC34123 can be forced to a logic low before performing board level testing as this will also prevent charge from accumulating in the battery. WARNING: If the
enable pin is asserted for more than 3 seconds with VDD ≥ 2.5 volts, the CBC34123 may not be reflowed
again.
2. Enable power domains under test, with VCHG/VEC net shorted to GND or EN forced to a logic low level.
3. Run all vectors to ensure proper functionality of all semiconductor devices.
4. After all other circuits are functional and boards have been reworked if needed.
5. Apply voltage to VIN that is in the range of 2.5V to 5.5V. (Note: VIN = VDD.)
6. Verify that the VCHG/VEC net is 4.1 volts +/- 0.025 volts.
7. Allow the battery to charge a very small amount by leaving the device in the above-noted configuration for
one second.
8. The chart in Figure 7 should be referenced to determine the voltage on the VCHG/VEC pin to be expected
after driving the ENABLE pin high for one second. The decay curves in the chart represent specific load
impedances as might be encountered with Automated Test Equipment (ATE). Additionally, the decay curves
represent the span of EnerChip cell impedances as specified in the respective data sheets. Note: If not
using ATE with the ability to add a load impedance, it will be necessary to add resistance in parallel with
the voltage measurement device so the readings will match the graph of Figure 7. Any measurement
equipment and associated impedance circuits must only be temporally tied to the VCHG/VEC node for
the time needed to make the measurement (seconds) and no longer as the measurement impedance
will cause the battery to become discharged below 2.5V at which time the cell will become permanently
damaged.
9. The graph in Figure 7 depicts the time-dependent and temperature-dependent voltage of the EnerChip RTC
after applying a 4.1VDC charging voltage for approximately one second, followed by a brief discharge at
a specific load resistance. Using this graph as a guide, the test engineer can develop a simple test that is
feasible with the available test equipment and fixtures and meets the production throughput needs.
©2013-2015 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
DS-72-31 V.13
Page 12 of 14
Preliminary
CBC34123 EnerChip™ RTC
1. The test engineer has the freedom to choose a point on the discharge curve that falls within the
parameters of test throughput and equipment measurement capability. In order for the EnerChip to be
considered as meeting the gross functional test specification, the voltage on the VCHG/VEC pin must be
above the value indicated by whichever line is chosen as the reference line.
2. Data at two temperatures is shown in order to encompass the range of anticipated factory test floors. Note
the influence of temperature on the EnerChip test discharge voltage when setting the test specification
pass/fail limits.
EnerChip Charge-Discharge Profiles for Setting Post-Assembly Test Limits
4.5
75K Ohm Load, 20 Degrees C
75K Ohm Load, 30 Degrees C
806K Ohm Load, 30 Degrees C
EnerChip Voltage (VDC)
4.0
806K Ohm Load, 20 Degrees C
3.5
3.0
2.5
2.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Charge-Discharge Time (seconds)
Figure 7: Voltage Determination on the VCHG/VEC Pin
CBC34123 Internal Battery Backup Verification: Optional Board/System Level Test. (1)
Warning: Board level reflow/rework is not permitted if the following procedure is used.
The following test is normally used in the prototype testing phase as this test may take 10-15 minutes to
perform which is typically unsuitable for high speed in-circuit testing.
1.
2.
3.
4.
5.
6.
7.
8.
Power up board or system.
Ensure that CBC34123 EN pin 15 is asserted and VDD is > 2.5 volts.
Allow battery to charge for several minutes.
Program device to be battery-backed.
Remove power for at least several seconds to one minute.
Power up board or system.
Read device formerly under battery-backed operation.
Verify device contents.
Notes:
(1)
This test does not verify the actual capacity of the integrated battery. In order to verify actual capacity, the
device must be charged for at least one hour and then provide RTC power holdover until battery cut-off occurs.
©2013-2015 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
DS-72-31 V.13
Page 13 of 14
Preliminary
CBC34123 EnerChip™ RTC
CBC34123 Packaging
EnerChip CBC34123 devices are packaging in tubes or reels. The following specifications are for the 1000
and 5000 part reel packaging configurations.
CBC34123-Q5C-TR1 is a 7 inch reel with 1000 parts. Cymbet uses the Advantek LOKREEL Mini RJ7xx
packaging reel that has an outside diameter of 7 inches (180mm) and 1/2 inch (13mm) diameter arbor hole.
Reel hubs measure 2.36 inches (60mm). The 7 inch reel is compliant with EIAJ standards for dimension and
surface resistivity.
CBC34123-Q5C-TR5 is a 13 inch reel with 5000 parts. Cymbet uses the Advantek 13” LOKREEL packaging
reel that has an outside diameter of 13 inches (330mm) and 1/2 inch (13mm) diameter arbor hole. Reel
hubs measure 4 inches (102mm). The 13 inch reel is compliant with EIAJ standards for dimension and surface
resistivity.
Cymbet Part
Package
Type, # of
Devices
Reel Size
Outside
Diameter - A
Tape Width W, W1
Cavity Pitch P1
Meters per
Reel
Pockets/
Reel
Width
A0
Length
B0
Depth
K0
CBC34123-M5C-TR1
QFN, 1000
180mm
16mm, 8 mm
108
7000
5.45
5.45
1.8
CBC34123-M5C-TR5
QFN, 5000
330mm
16mm, 8mm
540
13000
5.45
5.45
1.8
Feed Direction
•
•
•
CBC34123 Pin1 Location Top side up
•
Ordering Information
EnerChip CC Part Number
CBC34123-M5C-TR1
CBC34123-M5C-TR5
Description
EnerChip RTC in 5mm x 5mm x
1.4mm 16-QFN Land Grid Array
EnerChip RTC in 5mm x 5mm x
1.4mm 16-QFN Land Grid Array
CBC-EVAL-12
EnerChip RTC Evaluation Kit
CBC34123-M5C
Notes
Shipped in Tube
Tape-and-Reel - 1000 pcs (TR1) or
5000 pcs (TR5) per reel
USB based Eval Kit with
CBC34123 tab board
U.S. Patent No. 8,144,508. Additional U.S. and Foreign Patents Pending
Disclaimer of Warranties; As Is
The information provided in this data sheet is provided “As Is” and Cymbet Corporation disclaims all representations or warranties of any
kind, express or implied, relating to this data sheet and the Cymbet EnerChip product described herein, including without limitation, the
implied warranties of merchantability, fitness for a particular purpose, non-infringement, title, or any warranties arising out of course of
dealing, course of performance, or usage of trade. Cymbet EnerChip products are not authorized for use in life critical applications. Users
shall confirm suitability of the Cymbet EnerChip product in any products or applications in which the Cymbet EnerChip product is adopted
for use and are solely responsible for all legal, regulatory, and safety-related requirements concerning their products and applications and
any use of the Cymbet EnerChip product described herein in any such product or applications.
Cymbet, the Cymbet Logo, and EnerChip are Cymbet Corporation Trademarks
©2013-2015 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
DS-72-31 V.13
Page 14 of 14
Similar pages