EGP10ATHRU EGP10M RC P G S E M I C O N D U C T O R SUPER FAST RECTIFIER Reverse Voltage: 50 to 1000 Volts Forward Current:1.0Ampere SILICON RECTIFIER Ｒ DO-41 FEATURES GPRC( Glass Passivated Rectifier Chip) inside Glass passivated cavity-free junction Low forward voltage drop,High current capability JF １．０（２５．４） ＭＩＮ High surge current capability Super fast recovery time ０．１０７（２．７） ０．０８０（２．０） ＤＩＡ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ０．２０５（５．２０） ０．１８０（４．１０） MECHANICAL DATA Case: JEDEC DO-41 molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750,method 2026 １．０（２５．４） ＭＩＮ Polarity: Color band denotes cathode end ０．０３４（０．８５） ０．０２８（０．７１） ＤＩＡ Mounting Position: Any Weight: 0.012ounce, 0.34 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Dimensions in inches and (millimeters) (Rating at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,60HZ,resistive or inductive load. For capacitive load,derate current by 20%.) Symbols EGP 10A ＥＧＰ １０Ｂ ＥＧＰ １０Ｄ ＥＧＰ １０Ｆ ＥＧＰ １０Ｇ ＥＧＰ １０Ｊ ＥＧＰ １０Ｋ ＥＧＰ １０Ｍ 50 100 150 200 400 600 800 1000 35 70 105 140 280 280 280 280 50 100 150 200 400 600 800 1000 Units Maximum DC Blocking Voltage VRRM VRMS VDC Maximum Average Forward Rectified Current 0.375"(9.5mm)lead Length at Ta=55 C I(AV) 1.0 Amp Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) IFSM 30.0 Amps Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum Instantaneous Forward Voltage at 1.0 A Maximum DC Reverse Current At Rated DC Blocking Voltage TA=25 C VF 0.95 1.25 Typical Junction Capacitance(Note2) Operating Junction and Storage Temperature Range Volts 5.0 IR A 50 TA=100 C Maximum Reverse Recovery Time(Note1) Volts Volts Volts Trr CJ 35 50 TJ TSTG ns 25 -65 to+125 -65 to+150 PF C Note: 1.Test conditions: IF=0.5A,IR=1.0A,IRR=0.25A. 2.Measured at 1MHZ and applied reverse voltage of 4.0 Volts. 8-4 JINAN JINGHENG CO., LTD. ＮＯ．５１ ＨＥＰＩＮＧ ＲＯＡＤ ＰＲ ＣＨＩＮＡ ＴＥＬ：８６－５３１－６９４３６５７ ＦＡＸ：８６－５３１－６９４７０９６ WWW.JIFUSEMICON.COM FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE （＋） 50Vdc (APPROX) 10 NON INDUCTIVE ＋０．５Ａ PULSE GENERATOR (NOTE2) D.U.T. （－） 1 NON INDUCTIVE AVERAGE FORWARD CURRENT (A) FIG.1-TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 NON INDUCTIVE Ｔｒｒ ０ －０．２５Ａ OSCILLOSCOPE (NOTE1) －１．０Ａ NOTES:1.Rise Time=7ns max. input impedance=1 megohm 22pF 2.Rise Time=10ns max. source impedance =50 ohms INSTANTANEOUS REVERSE CURRENT ,(mA) INSTANTANEOUS FORWARD CURRENT( AMPERES) １ TA=25 C Pulse Width=300 s 1% Duty Cycle ０．０１ ０．８ １．０ EGP10J-EGP10M ０ ２５ ５０ ７５ １００ １２５ １５０ １７５ FIG.4-TYPICAL REVERSE CHARACTERISTICS EGP10G ０．６ EGP10A-EGP10G AMBIENT TEMPERATURE ( C) EGP10J-EGP10M ０．４ ０．５ ０ EGP10A-EGP10F ０．２ Single Phase Half Wave 60hz Resistive or Inductive Load 0.375"(9.5mm) Lead Length １．０ SET TIME BASE FOR 5/10 ns/cm １０ ０ １．５ １ｃｍ FIG.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS ０．１ SILICON RECTIFIER RATINGS AND CHARACTERISTIC CURVES EGP10A THRU EGP10M １．２ １００ TJ=100 C １０ １．０ TJ=25 C ０．１ １．４ INSTANTANEOUS FORWARD VOLTAGE (VOLTS) ０．０１ ０ ２０ ４０ ６０ ８０ １００ １２０ １４０ PERCENT OF RATED PEAK REVERSE VOLTAGE(%) FIG.5-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT FIG.6-TYPICAL JUNCTION CAPACITANCE ３５ PEAK FORWARD SURGE CURRENT(AMPERES) JUNCTION CAPACITANCE(pF) １７５ ３０ TA=25 C 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) ２５ ２０ １５ １０ EGP10A-EGP10G ５ EGP10J-EGP10M ０ １ ５ １０ ５０ １５０ １２５ １００ ７５ TJ=25 C ５０ ２５ １ １００ ０．１ NUMBER OF CYCLES AT 60Hz ０．５ １ ２ ５ １０ ２０ ５０ １００ REVERSE VOLTAGE. (V) 8-5 JINAN JINGHENG CO., LTD. ＮＯ．５１ ＨＥＰＩＮＧ ＲＯＡＤ ＰＲ ＣＨＩＮＡ ＴＥＬ：８６－５３１－６９４３６５７ ＦＡＸ：８６－５３１－６９４７０９６ WWW.JIFUSEMICON.COM