ATMEL ATSAM2133B Low-power synthesizer with effects and built-in ram Datasheet

Features
• Single-chip Synthesizer + Effects, Features include
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– High-quality Wavetable Synthesis, Serial MIDI In & Out, MPU-401 (UART)
– Effects: Reverb + Chorus, on MIDI and/or Audio In
– Up to 64-voice Polyphony
– Surround on Two or Four Speakers with Intensity/Delay Control
– Four-band Parametric Equalizer
– Audio-in Processing through Reverb, Chorus, Equalizer, Surround
Low Chip Count in Applications
– ATSAM2133B Synthesizer, ROM/Flash, DAC
– Built-in (32K x 16) Effects RAM
Low-power
– 40 mA Typical Operating Current, <1 µA Power-down
– 2.5V and 3.3V Supply
– Built-in Power Switch
16-bit Samples, 44.1 KHz Sampling Rate, 24 dB Digital Filter per Voice
Available Wavetable Firmwares and Sample Sets
– CleanWave8® Low-cost General MIDI 1-MB Firmware + Sample Set
– CleanWave32® Top-quality 4-MB Firmware + Sample Set
– Other Sample Sets Available under special conditions
Built-in ROM Debugger, Flash Programmer through Dedicated Pins
– Fast Product-to-market
Small Footprint
– 12 x 12 mm, 0.4 mm Pitch, 100-lead TQFP Package
– 10 x 10 mm, 0.8 mm Pitch 100-ball CBGA Package
Typical Applications
– Portable Telephones
– Computer Karaoke, Portable Karaoke Systems
– Keyboards, Portable Keyboard Instruments
Sound
Synthesis
ATSAM2133B
Low-power
Synthesizer
with Effects and
Built-in RAM
Description
The ATSAM2133B is a low-cost derivative of the ATSAM97xx series. It retains the
same high-quality synthesis with up to 64-voice polyphony. The ATSAM2133B maximum wavetable memory is 16 MB and the parallel communication is via a standard
MPU-401. The integrated 32K x 16 RAM allows for high-quality effects without additional components.
The highly integrated architecture of the ATSAM2133B combines a specialized highperformance RISC-based digital signal processor (Synthesis/DSP) and a general-purpose 16-bit CISC-based control processor on a single chip. An on-chip memory
management unit (MMU) allows the synthesis/DSP and the control processor to share
external ROM and/or RAM memory devices. An intelligent peripheral I/O interface
function handles other I/O interfaces, such as the MPU port, the on-chip MIDI UART,
and the Codec control interface, with minimum intervention from the control processor.
Rev. 2694A–DRMSD–05/03
1
Typical Applications
Figure 1. Portable Telephone
ATSAM2133B
CleanWave
ROM
DAC or
Codec
General MIDI-compliant Wavetable Synthesis
Parallel or Serial Interface
Reverb + Chorus
Surround
Four-band Parametric Equalizer
Audio-in Effects (Codec required)
Figure 2. Low-cost Karaoke, Hand-held Karaoke
ATSAM2133B
CleanWave
ROM
Codec
General MIDI-compliant Synthesis
Sound Extensions (CleanWave 32)
Compatible Reverb + Chorus
MIDI Serial or 8-bit Parallel Interface
Surround Effect
Four-channel Surround (Requires Extra DAC)
Four-band Equalizer
Microphone Echo
Figure 3. Low-cost Keyboard Instrument
ATSAM2133B
CleanWave
ROM
DAC
2
General MIDI-compliant Synthesis
Sound Extensions (CleanWave 32)
Compatible Reverb + Chorus
MIDI Serial or 8-bit Parallel Interface
Surround Effect
Four-band Parametric Equalizer
ATSAM2133B
2694A–DRMSD–05/03
ATSAM2133B
General Description
Block Diagram
Synthesis/DSP
ATSAM2133B
P16 Processor
64-slot RISC DSP Core
includes
512 x 32 Alg RAM
128 x 28 MA1 RAM
256 x 28 MA2 RAM
256 x 28 MB RAM
256 x 16 MX RAM
256 x 12 MY RAM
64 x 13 ML RAM
16-bit CISC
Processor Core
includes
256 x 16 Data RAM
Codec + DAC
32K x 16 RAM
MMU
Memory
Management
Unit
ROM
or
Flash
I/O Functions
includes
Control/Status
MIDI UART
Timers
Codec Data I/F
Host I/F FIFO
ROM
Debug/Flash Prog
MIDI
MPU
Debug/Flash
Prog
Synthesis/DSP Engine
The synthesis/DSP engine operates on a frame timing basis with the frame subdivided
into 64 process slots. Each process is, in turn, divided into 16 micro-instructions known
as algorithms. Up to 32 synthesis/DSP algorithms can be stored on-chip in the Alg RAM
memory, allowing the device to be programmed for a number of audio signal generation/processing applications. The synthesis/DSP engine is capable of generating 64
simultaneous voices using algorithms such as wavetable synthesis with interpolation,
alternate loop and 24 dB resonant filtering for each voice. Slots may be linked together
(ML RAM) to allow implementation of more complex synthesis algorithms.
A typical application will use half the capacity of the synthesis/DSP engine for synthesis,
thus providing state-of-the-art 32-voice wavetable polyphony. The remaining processing
power will be used for typical functions such as reverberation, chorus, audio-in processing, surround effect, equalizer, etc.
Frequently-accessed synthesis/DSP parameter data are stored in five banks of on-chip
RAM memory. Sample data or delay lines, which are accessed relatively infrequently,
are stored in external ROM or internal 32K x 16 RAM memory. The combination of localized micro-program memory and localized parameter data allows micro-instructions to
execute in 20 ns (50 MIPS). Separate buses from each of the on-chip parameter RAM
memory banks allow highly parallel data movement to increase the effectiveness of
each micro-instruction. With this architecture, a single micro-instruction can accomplish
up to six simultaneous operations (add, multiply, load, store, etc.), providing a potential
throughput of 300 million operations per second (MOPS).
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2694A–DRMSD–05/03
P16 Control Processor
and I/O Functions
The P16 control processor is a general-purpose 16-bit CISC processor core that runs
from external memory. It includes 256 words of local RAM data memory.
The P16 control processor writes to the parameter RAM blocks within the synthesis/DSP core in order to control the synthesis process. In a typical application, the P16
control processor parses and interprets incoming commands from the MIDI UART or
from the MPU-401 interface and then controls the Synthesis/DSP by writing into the
parameter RAM banks in the DSP core. Slowly-changing synthesis functions, such as
LFOs, are implemented in the P16 control processor by periodically updating the DSP
parameter RAM variables.
The P16 control processor interfaces with other peripheral devices, such as the system
control and status registers, the on-chip MIDI UART, the on-chip timers and the MPU401 interface through specialized intelligent peripheral I/O logic. This I/O logic automates many of the system I/O transfers to minimize the amount of overhead processing
required from the P16.
The MPU-401 interface is implemented using one address line (A0), a chip select signal,
read and write strobes from the host and an 8-bit data bus (D0 - D7).
Karaoke and keyboard applications can take advantage of the 8-bit MPU-401 interface
to communicate with the ATSAM2133B at high speed, with the MIDI IN and MIDI OUT
signals remaining available.
Memory Management
Unit (MMU)
4
The Memory Management Unit (MMU) block allows external ROM/Flash and/or internal
32K x 16 RAM memory resources to be shared between the synthesis/DSP and the P16
control processor. This allows a single device (i.e., internal RAM) to serve as delay lines
for the synthesis/DSP and as data memory for the P16 control processor.
ATSAM2133B
2694A–DRMSD–05/03
ATSAM2133B
Pin Description
100-lead TQFP Package
Table 1. Pin by Function - 100-lead TQFP Package
Pin Name
Pin Number
Type
Function
GND
10, 16, 31, 36,
45, 56, 68, 76,
80, 84, 96
PWR
Power ground - all GND pins should be returned to digital ground.
VC2
11, 37, 83, 86,
87
PWR
Core power +2.5V ±10%. All VC2 pins should be returned to +2.5V. If the built-in power
switch is used for minimum power down consumption, then all these pins should be
connected to PWROUT, the output of the built-in power switch.
VC3
17, 30, 44, 57,
69, 97
PWR
Periphery power +2.25V to 3.7V. All VC3 pins should be returned to nominal +3.3V. VC3
should not be lower than VC2.
PWRIN
77
PWR
Power switch input, 2.25V to 2.95V. Even if the power switch feature is not used, this pin
must be connected to nominal 2.5V.
PWROUT
78
PWR
Power switch output. Use this pin to supply 2.5V core power by connecting it to all VC2 pins.
D0 - D7
6-9, 12-15
I/O
8-bit data bus to host processor. Information on these pins is parallel MIDI (MPU-401 type
applications)
CS
2
IN
Chip select from host, active low.
WR
4
IN
Write from host, active low.
RD
3
IN
Read from host, active low.
A0
5
IN
Selects MPU-401 internal registers:
0 = data registers (read/write)
1 = status register (read) control register (write)
IRQ
1
TSOUT
RESET
22
IN
X1, X2
81, 82
CKOUT
88
OUT
Buffered X2 output, can be used to drive external DAC master clock (256 * Fs)
DABD0 -1
93, 92
OUT
Two stereo serial audio data output (4 audio channels). Each output holds 64 bits (2 x 32)
of serial data per frame. Audio data has up to 20 bits precision. DABD0 can hold additional
control data (mute, A/D gain, D/A gain, etc.)
CLBD
94
OUT
Audio data bit clock, provides timing to DABD0 - 1, DAAD.
WSBD
95
OUT
Audio data word select. The timing of WSBD can be selected to be I2S or Japanese
compatible.
DAAD
98
IN
Stereo serial audio data input.
P0 - P3
18 - 21
I/O
General-purpose programmable I/O pins.
DBCLK
90
IN
Debug clock. Should be connected to VC3 under normal operation. If DBCLK is found low
just after RESET, then the internal ROM debugger/flash programmer is started.
DBDATA
91
I/O
Debug data. Allows serial communication for debug/flash programming.
DBACK
89
OUT
-
Tri-state output pin, active high.
Master reset input, active low.
Crystal connection. Crystal frequency should be Fs*256 (typ 11.2896 MHz). Crystal
frequency is internally multiplied by 4 to provide the IC master clock. An external 11.2896
MHz clock can also be used on X1 (2.5VPP max through 47pF capacitor). X2 cannot be
used to drive external ICs; use CKOUT instead.
Debug acknowledge. Toggled each time a bit is received/sent on DBDATA.
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Table 1. Pin by Function - 100-lead TQFP Package (Continued)
Pin Name
Pin Number
MIDI IN
100
IN
MIDI OUT
99
OUT
MIDI OUT output
WA0 - 22
24 - 29,
32 - 35,
38 - 43, 46 - 52
OUT
External memory address (ROM/Flash). Up to 16 MB.
WD0 - 15
58 - 67, 70 - 75
I/O
WCS
53
OUT
External ROM/FLASH chip select, active low.
WWE
55
OUT
External FLASH write enable, active low.
WOE
54
OUT
External ROM/FLASH output enable, active low.
LFT
85
ANA
PLL low-pass filter, should be connected to an external RC network.
TEST
23
IN
Test pin, should be returned to GND.
PDWN
79
IN
Power down, active low, all outputs except WCS, WWE, WOE are set to logic 0, the PLL
and crystal oscillator are stopped. If the power switch feature is used, then 2.5V supply
voltage is removed from the core. To exit from power down, PDWN must be set to VC2, then
RESET applied. When unused, this pin must be connected to VC2.
6
Type
Function
MIDI IN input
External ROM/FLASH data
ATSAM2133B
2694A–DRMSD–05/03
ATSAM2133B
Table 2. Pinout by Pin Number - 100-lead TQFP Package
Pin Number
Signal Name
Pin Number
Signal Name
Pin Number
Signal Name
Pin Number
Signal Name
1
IRQ
26
WA2
51
WA21
76
GND
2
CS
27
WA3
52
WA22
77
PWRIN
3
RD
28
WA4
53
WCS
78
PWROUT
4
WR
29
WA5
54
WOE
79
PDWN
5
A0
30
VC3
55
WWE
80
GND
6
D0
31
GND
56
GND
81
X1
7
D1
32
WA6
57
VC3
82
X2
8
D2
33
WA7
58
WD0
83
VC2
9
D3
34
WA8
59
WD1
84
GND
10
GND
35
WA9
60
WD2
85
LFT
11
VC2
36
GND
61
WD3
86
VC2
12
D4
37
VC2
62
WD4
87
VC2
13
D5
38
WA10
63
WD5
88
CKOUT
14
D6
39
WA11
64
WD6
89
DBACK
15
D7
40
WA12
65
WD7
90
DBCLK
16
GND
41
WA13
66
WD8
91
DBDATA
17
VC3
42
WA14
67
WD9
92
DABD1
18
P0
43
WA15
68
GND
93
DABD0
19
P1
44
VC3
69
VC3
94
CLBD
20
P2
45
GND
70
WD10
95
WSBD
21
P3
46
WA16
71
WD11
96
GND
22
RESET
47
WA17
72
WD12
97
VC3
23
TEST
48
WA18
73
WD13
98
DAAD
24
WA0
49
WA19
74
WD14
99
MIDI OUT
25
WA1
50
WA20
75
WD15
100
MIDI IN
7
2694A–DRMSD–05/03
100-ball LFBGA Package
Table 3. Pin by Function - 100-ball LFBGA Package
Pin Name
Pin Number
Type
Function
GND
A3, A9, C7, D5,
D10, E1, F7, G4,
G5, J5, J8
PWR
Power ground - all GND pins should be returned to digital ground
VC2
B6, C5, C6, E2, H6
PWR
Core power +2.5V ±10%. All VC2 pins should be returned to +2.5V. If the built-in power
switch is used for minimum power-down consumption, then all these pins should be
connected to PWROUT, the output of the built-in power switch.
VC3
C3, D8, G2, G10,
H4, H7
PWR
Periphery power 2.25V to 3.7V. All VC3 pins should be returned to nominal +3.3V. VC3
should be lower than VC2.
PWRIN
A8
PWR
Power switch input, 2.25V to 2.95V. Even if the power switch feature is not used, this
pin must be connected to nominal 2.5V
PWROUT
B7
PWR
Power switch output. Use this pin to supply 2.5V core power by connecting it to all VC2
pins.
D0 - D7
E4, D1, E3, F4, F3,
F5, F2, F1
I/O
8-bit data bus to host processor. Information on these pins is parallel MIDI (MPU-401
type applications).
CS
C1
IN
Chip select from host, active low.
WR
C2
IN
Write from host, active low.
RD
D2
IN
Read from host, active low.
A0
D3
IN
Selects MPU-401 internal registers:
0: data registers (read/write)
1: status register (read) control register (write)
IRQ
B1
TSOUT
RESET
H3
IN
X1, X2
D6, A7
CKOUT
E5
OUT
Buffered X2 output. Can be used to drive external DAC master clock (256 * Fs)
DABD0 - 1
A4, B4
OUT
Two stereo serial audio data output (4 audio channels). Each output holds 64 bits
(2 x 32) of serial data per frame. Audio data precise up to 20 bits. DABD0 can hold
additional control data (mute, A/D gain, D/A gain, etc.)
CLBD
C4
OUT
Audio data bit clock, provides timing to DABD0 - 1, DAAD.
WSBD
B3
OUT
Audio data word select. The timing of WSBD can be selected to be I2S or Japanese
compatible.
DAAD
A2
IN
Stereo serial audio data input.
P0 - P3
G1, G3, H2, H1
I/O
General-purpose programmable I/O pins.
DBCLK
A5
IN
Debug clock. Should be connected to VC3 under normal operation. If DBCLK is found
low just after RESET, then the internal ROM debugger/flash programmer is started
DBDATA
D4
I/O
Debug data. Allows serial communication for debug/flash programming
DBACK
B5
OUT
MIDI IN
A1
IN
MIDI OUT
B2
OUT
8
-
Tri-state output pin, active high.
Master reset input, active low.
Crystal connection. Crystal frequency should be Fs * 256 (typ 11.2896 MHz). Crystal
frequency is internally multiplied by 4 to provide the IC master clock. An external
11.2896 MHz clock can also be used on X1 (2.5VPP max through 47 pF capacitor). X2
cannot be used to drive external ICs; use CKOUT instead.
Debug ack. Toggled each time a bit is received/sent on DBDATA
MIDI IN input
MIDI OUT output
ATSAM2133B
2694A–DRMSD–05/03
ATSAM2133B
Table 3. Pin by Function - 100-ball LFBGA Package (Continued)
Pin Name
Pin Number
Type
Function
WA0 - 22
J2, K1, K2, K3, J4,
J3, K4, H5, G6, K5,
F6, J6, K6, G7, J7,
K7, K8, H8, K9, J9,
K10, J10, H10
OUT
External memory address (ROM/FLASH). Up to 16 Mega bytes.
WD0 - 15
F8, E7, F10, F9,
E8, E6, E9, E10,
D7, D9, C9, C10,
C8, B10, B9, A10
WCS
G9
OUT
External ROM/FLASH chip select, active low.
WWE
G8
OUT
External FLASH write enable, active low.
WOE
H9
OUT
External ROM/FLASH output enable, active low.
LFT
A6
ANA
PLL low pass filter. Should be connected to an external RC network.
TEST
J1
IN
Test pin. Should be returned to GND.
PDWN
B8
IN
Power down, active low, all outputs except WCS, WWE, WOE are set to logic 0, the
PLL and crystal oscillator are stopped. If the power switch feature is used, then 2.5V
supply voltage is removed from the core. To exit from power down, PDWN must be set
to VC2, then RESET applied. When unused this pin must be connected to VC2.
I/O
External ROM/FLASH data
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2694A–DRMSD–05/03
Table 4. Pinout by Pin Number - 100-ball LFBGA Package
Pin Number
Signal Name
Pin Number
Signal Name
Pin Number
Signal Name
Pin Number
Signal Name
A1
MIDI IN
C6
VC2
F1
D7
H6
VC2
A2
DAAD
C7
GND
F2
D6
H7
VC3
A3
GND
C8
WD12
F3
D4
H8
WA17
A4
DABD0
C9
WD10
F4
D3
H9
WOE
A5
DBCLK
C10
WD11
F5
D5
H10
WA22
A6
LFT
D1
D1
F6
WA10
J1
TEST
A7
X2
D2
RD
F7
GND
J2
WA0
A8
PWRIN
D3
A0
F8
WD0
J3
WA5
A9
GND
D4
DBDATA
F9
WD3
J4
WA4
A10
WD15
D5
GND
F10
WD2
J5
GND
B1
IRQ
D6
X1
G1
P0
J6
WA11
B2
MIDI OUT
D7
WD8
G2
VC3
J7
WA14
B3
WSBD
D8
VC3
G3
P1
J8
GND
B4
DABD1
D9
WD9
G4
GND
J9
WA19
B5
DBACK
D10
GND
G5
GND
J10
WA21
B6
VC2
E1
GND
G6
WA8
K1
WA1
B7
PWROUT
E2
VC2
G7
WA13
K2
WA2
B8
PDWN
E3
D2
G8
WWE
K3
WA3
B9
WD14
E4
D0
G9
WCS
K4
WA6
B10
WD13
E5
CKOUT
G10
VC3
K5
WA9
C1
CS
E6
WD5
H1
P3
K6
WA12
C2
WR
E7
WD1
H2
P2
K7
WA15
C3
VC3
E8
WD4
H3
RESET
K8
WA16
C4
CLBD
E9
WD6
H4
VC3
K9
WA18
C5
VC2
E10
WD7
H5
WA7
K10
WA20
10
ATSAM2133B
2694A–DRMSD–05/03
ATSAM2133B
Absolute Maximum Ratings
Table 5. Absolute Maximum Ratings
Ambient Temperature (Power applied)........... -40°C to + 85°C
*NOTICE:
Storage Temperature .................................... -65°C to + 150°C
Voltage on Input Pins ................................. -0.5V to VC3 + 0.3V
(except X1 and PDWN)
Voltage on X1 and PDWN Pins.................. -0.5V to VC2 + 0.3V
VC2 Supply Voltage ..............................................-0.5V to + 3V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the
device at these or any other conditions
beyond those indicated in the operational
sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
VC3 Supply Voltage ...........................................-0.5V to + 4.5V
Maximum IOL per I/O pin................................................. 4 mA
Maximum Input Current per Input Pin.............................. 4 mA
Maximum Output Current from PWROUT Pin ............. 525 mA
(max duration = 1 sec)
Recommended Operating Conditions
Table 6. Recommended Operating Conditions
Symbol
Parameter
Min
Typ
Max
Unit
VC2
Supply voltage
2.25
2.5
2.75
V
VC3
Supply voltage
VC2
3.3
3.6
V
PWRIN
Power supply
2.25
2.5
2.95
V
IPWROUT
Power switch output current
-
-
175
mA
tA
Operating ambient temperature
0
-
70
°C
DC Characteristics
Table 7. DC Characteristics (tA = 25°C, VC2 = 2.5V ± 10%, VC3 = 3.3V ± 10%)
Symbol
Parameter
Min
Typ
Max
Unit
VIL
Low-level input voltage (Except X1, PDWN)
-0.3
-
1.0
V
VIH
High-level input voltage (Except X1, PDWN)
2.3
-
VC3+0.3
V
VIL
Low-level input voltage for X1, PDWN
-0.3
-
0.6
V
VIH
High-level input voltage for X1, PDWN
2
-
VC2+0.3
V
VOL
Low-level output voltage IOL = -2mA
-
-
0.4
V
VOH
High-level output voltage IOH = 2mA
2.9
-
-
V
-
90
Power consumption (crystal frequency =11.2896 MHz)
mW
Power down supply current (using power switch)
1
5
µA
Drop down from PWRIN to PWROUT (at IPWROUT = 100 mA)
-
0.1
V
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Timings
All timing conditions: VC2 = 2.5V, VC3 = 3.3V, tA = 25°C, all outputs except X2 and LFT
load capacitance = 30 pF.
All timings refer to tCK, the internal master clock period.
The internal master clock frequency is four times the frequency at pin X1. Therefore tCK
= tXTAL/4.
The sampling rate is given by 1/(tCK x 1024). The maximum crystal frequency/clock frequency at X1 is 12.288 MHz (48 kHz sampling rate).
Crystal Frequency
Selection
There is a trade-off between the crystal frequency and the support of widely-available
external ROM/Flash components. Table 8 gives information on selecting the best fit for
a given application.
Table 8. Crystal Frequency Selection Parameters
Sample Rate (KHz)
Crystal
(MHz)
tCK
(ns)
ROM tA
(ns)
48
12.288
20.35
92
Maximum frequency
44.1
11.2896
22.14
101
Recommended for current designs
37.5
9.60
26.04
120
31.25
8.00
31.25
146
Comments
Using 11.2896 MHz crystal frequency allows the use of widely-available ROMs with 100
ns access time while providing state-of-the-art 44.1 kHz sampling rate.
12
ATSAM2133B
2694A–DRMSD–05/03
ATSAM2133B
PC Host Interface
Figure 4. Host Interface Read Cycle
A0
tAVCS
CS
tCSLRDL
tPRD
tRDHCSH
RD
tRDLDV
tDRH
D0 - D7
Figure 5. Host Interface Write Cycle
tWRCVC
A0
tAVCS
CS
tCSLWRL
tPWR
tWRHCSH
RD
tDWS
tDWH
D0 - D7
Table 9. PC Host Interface Timing Parameters
Symbol
Parameter
Min
Typ
Max
Unit
tAVCS
Address valid to chip select low
0
-
-
ns
tCSLRDL
Chip select low to RD low
5
-
-
ns
tRDHCSH
RD high to CS high
5
-
-
ns
tPRD
RD pulse width
50
-
-
ns
tRDLDV
Data out valid from RD
-
-
20
ns
tDRH
Data out hold from RD
5
-
10
ns
tCSLRWRL
Chip select low to WR low
5
-
-
ns
tWRHCSH
WR high to CS high
5
-
-
ns
tPWR
WR pulse width
50
-
-
ns
tDWS
Write data setup time
10
-
-
ns
tDWH
Write data hold time
0
-
-
ns
tWRCYC
Write cycle
128
-
-
tck
13
2694A–DRMSD–05/03
External ROM/Flash
Figure 6. ROM/Flash Read Cycle
tRC
WCS0
tCSOE
WA0 - WA21
tPOE
WOE
tOE
tDE
WD0 - WD15
tACE
Table 10. External ROM/Flash Timing Parameters
14
Symbol
Parameter
Min
Typ
Max
Unit
tRC
Read cycle time
5 * tCK
-
6 * tCK
ns
tCSOE
Chip select low/address valid to WOE
low
2 * tCK - 5
-
3 * tCK + 5
ns
tPOE
Output enable pulse width
-
3 * tCK
-
ns
tACE
Chip select/address access time
5 * tCK - 5
-
-
ns
tOE
Output enable access time
3 * tCK - 5
-
-
ns
tDE
Chip select or WOE high to input data
Hi-Z
0
-
2 * tCK - 5
ns
ATSAM2133B
2694A–DRMSD–05/03
ATSAM2133B
Figure 7. External Flash Write Cycle
tWC
WCS1
tCSWE
WA0 - WA21
WOE
tWP
WWE
tDW
tDH
WD0 - WD15
Table 11. External Flash Timing Parameters
Symbol
Parameter
Min
Typ
Max
Unit
tWC
Write cycle time
5 * tCK
-
6 * tCK
ns
tCSWE
Write enable low from CS or Address
or WOE
2 * tCK - 10
-
-
ns
tWP
Write pulse width
-
4 * tCK
-
ns
tDW
Data out setup time
4 * tCK - 10
-
-
ns
tDH
Data out hold time
10
-
-
ns
15
2694A–DRMSD–05/03
Digital Audio
Figure 8. Digital Audio
tCW
tCLBD
tCW
WSBD
CLBD
tSOD
tSOD
DABD0
DABD1
DAAD
Table 12. Digital Audio Timing Parameters
Symbol
Parameter
Min
Typ
Max
tCW
CLBD rising to WSBD change
8 * tCK - 10
ns
tSOD
DABD valid prior/after CLBD rising
8 * tCK - 10
ns
tCLBD
CLBD cycle time
16 * tCK
Unit
ns
Figure 9. Digital Audio Frame Format
WSBD
(I2S)
WSBD
(Japanese)
CLBD
DABD0
DABD1
DAAD
MSB
Notes:
16
LSB
16 bits
LSB
18 bits
LSB
20 bits
MSB
1. Selection between I2S and Japanese format is a firmware option.
2. DAAD is 16 bits only.
ATSAM2133B
2694A–DRMSD–05/03
ATSAM2133B
Reset and Powerdown
During power-up, the RESET input should be held low until the crystal oscillator and
PLL are stabilized. This can take about 20 ms.
After the low-to-high transition of RESET, the following occurs:
•
Synthesis/DSP enters an idle state
•
P16 program execution starts from address 0100H in ROM space (WCS low)
If PDWN is asserted low, then the crystal oscillator and PLL are stopped. If the power
switch is used, then the chip enters a deep power-down sleep mode, as power is
removed from the core. To exit power down, PDWN must be asserted high, then
RESET applied.
Power-down mode is managed by an internal power switch. The equivalent schematic
and standard connection is shown on the diagram below.
All the VC2 pins must be connected to PWROUT.
Figure 10. Schematic
PDWN = L: Power-down Mode (Internal Power Switch Open)
VC2 Source from
Power Supply
ATSAM2133B
Note:
PWROUT
PDWN
PWRIN
PDWN = H: Operating Mode (Internal Power Switch Closed)
VC2
VC2
VC2
VC2
VC2
VC2
High level for PDWN is VC2 = 2.5V ±10%.
Figure 11. PDWN Connection
3.3V
3.3V
2.5V
VC3
VC3
PWRIN
VC2
PWROUT
10 kOhm
PDWN
Control
(High level = 3.3V)
HOST
PDWN
ATSAM2133B
17
2694A–DRMSD–05/03
Recommended Board
Layout
Like all HCMOS high integration ICs, the following simple rules of board layout are mandatory for reliable operation:
•
GND, VC3, VC2 Distribution and Decouplings
All GND, VC3, VC2 pins should be connected. A GND plane is strongly recommended
below the ATSAM2133B. The board GND + VC3 distribution should be in grid form.
Recommended VC2 decoupling is 0.1 µF at each corner of the IC with an additional 10
µF decoupling close to the crystal. VC3 requires a single 0.1uF decoupling.
•
Crystal, LFT
The paths between the crystal, the crystal compensation capacitors, the LFT filter R-CR and the ATSAM2133B should be short and shielded. The ground return from the compensation capacitors and LFT filter should be the GND plane from ATSAM2133B.
•
Buses
Parallel layout between D0 - D7 and WA0 - WA21/WD0 - WD15 should be avoided. The
D0 - D7 bus is an asynchronous type bus. Even on short distances, it can induce pulses
on WA0 - WA21/WD0 - WD15 that can corrupt address and/or data on these buses.
A ground plane should be implemented below the D0 - D7 bus, which is connected to
the host and to the ATSAM2133B GND.
A ground plane should be implemented below the WA0 - WA21/WD0 - WD15 bus,
which is connected to the ROM/Flash grounds and to the ATSAM2133B.
•
Analog Section
A specific AGND ground plane should be provided, which is connected to the GND
ground by a single trace. No digital signals should cross the AGND plane.
Refer to the Codec vendor recommended layout for correct implementation of the analog section.
18
ATSAM2133B
2694A–DRMSD–05/03
ATSAM2133B
Recommended
Crystal
Compensation and
LFT Filter
Figure 12. Recommended Crystal Compensation and LFT Filter
81
X1
82
85
C4
1 nF
470 Ohm
LFT
C1
22 pF
GND
C2
R1
X1
X2
22 pF
GND
C3
10 nF
GND
19
2694A–DRMSD–05/03
Mechanical Dimensions
100-lead TQFP Package
Figure 13. Thin Plastic 100-lead Quad Flat Pack (TQFP100)
Table 13. 100-lead TQFP Package Dimensions (in mm)
Parameter
Min
Nom
Max
A
1.40
1.50
1.60
A1
0.05
0.10
0.15
A2
1.35
1.40
1.45
D
14.00
D1
12.00
E
14.00
E1
12.00
L
0.45
P
B
20
0.60
0.75
0.40
0.13
0.18
0.23
ATSAM2133B
2694A–DRMSD–05/03
ATSAM2133B
100-ball LFBGA Package
Figure 14. Low Profile Fine Pitch 100-ball Grid Array (LFBGA)(Bottom View)
Package Marking
Figure 15. Package Marking
FRANCE
SAM2133B-G
YYWW 57542B
XXXXXXXXX
Note:
A1 Ball in lower left-hand corner.
21
2694A–DRMSD–05/03
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2694A–DRMSD–05/03
0M
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