Sharp GP2L01F High sensitivity, long focal distance type photointerrupter Datasheet

GP2L01/GP2L01F
GP2L01/GP2L01F
High Sensitivity, Long Focal
Distance Type
Photointerrupter
■ Features
■ Outline Dimensions
2 - (3.5)
19.0
12.0
2 - (2.54)
(5.0)
6.0
}
2 - 19.5 ˚
0.45 ± 0.2
4.5 17.0 ± 1.0
4 3 2 1
0.7MAX.
4-
■ Absolute Maximum Ratings
Output
3
2
❈
1
2
3
4
Rating
50
1
6
75
35
6
40
75
- 25 to + 85
- 40 to + 100
260
Cathode
Anode
Emitter
Collector
❈ Protrusion of resin for fixing
∗Unspecified tolerances shall be as follows;
Dimensions(d) Tolerance
d<= 6.0 ± 0.1
6.0<d<= 18.0 ± 0.2
18.0<d<= 24.0 ± 0.25
∗( ) : Reference dimensions
( Ta = 25˚C )
Symbol
IF
I FM
VR
P
V CEO
V ECO
IC
PC
T opr
T stg
T sol
1
2 - φ 3.2 ± 0.2
24.0
Input
4
4 - C2.0
2.0
1. Copiers, printers
2. Automatic vending machines, ticket vending machines
3. Optoelectronic switches, optoelectronic
counters
16.0 ± 1.0
( 2.5 ) Detector center
■ Applications
Parameter
Forward current
∗1
Peak forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
∗2
Soldering temperature
Internal connection
diagram
0.3
1. Long focal distance
2. High current transfer ratio
GP2L01 CTR: MIN. 30%
at I F = 10mA
GP2L01F CTR: MIN. 25%
2. Visible light cut-off type: GP2L01F
( Unit : mm )
± 0.2
Unit
mA
A
V
mW
V
V
mA
mW
˚C
˚C
˚C
∗1 Pulse width<= 100 µ s, Duty ratio= 0.01
∗2 For 3 seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
GP2L01/GP2L01F
■ Electro-optical Characteristics
( Ta = 25˚C )
Parameter
Forward voltage
Peak forward voltage
Reverse current
Collector dark current
Input
Output
∗3
Transfer
characteristics
Conditions
I F = 20mA
I FM = 0.5A
V R = 3V
VCE = 10V
Ic
I F = 10mA, VCE = 2V
tr
tf
I C = 10mA, V CE = 2V, R L = 100 Ω
d = 5mm
I F = 10mA, VCE = 2V
GP2L01
GP2L01F
Rise time
Fall time
Collector
Current
Response time
∗4
Symbol
VF
V FM
IR
I CEO
Leak current
I LEAK
MIN.
3
2.5
-
TYP.
1.2
3.0
80
70
-
MAX.
1.4
4.0
10
10 - 6
25
400
350
100
∗3 Test method : A reflective object shall be an OMS test card ( white ) specified by Sharp, and be 5.0mm away from the sensor.
∗4 Wihtout reflective object
Fig. 1 Forward Current vs.
Ambient Temperature
Fig. 2 Collector Power Dissipation vs.
Ambient Temperature
80
75
Collector power dissipation P C ( mW )
60
Forward current I F ( mA )
50
40
30
20
10
0
- 25
0
25
50
75
Ambient temperature T a ( ˚C )
85
60
50
40
30
20
10
0
- 25
100
Fig. 3 Peak Forward Current vs. Duty Ratio
70
0
25
50
75
Ambient temperature T a ( ˚C )
85
100
Fig. 4 Forward Current vs. Forward Voltage
500
Pulse width <= 100 m s
T a= 25˚C
T a = 75˚C
50˚C
200
( mA )
1000
25˚C
0˚C
- 25˚C
100
50
F
500
Forward current I
Peak forward current I FM ( mA )
2000
200
100
20
10
5
50
2
20
10 -
3
2
5
10 -
2 2
5
Duty ratio
10 -
1 2
5
1
1
0
0.5
1.0
1.5
2.0
Forward voltage V F ( V )
2.5
3.0
Unit
V
V
µA
A
mA
mA
µs
µs
µA
GP2L01/GP2L01F
Fig. 5 Collector Current vs. Forward Current
Fig. 6 Collector Current vs.
Collector-emitter Voltage
30
25
T a = 25˚C
V CE = 2V
T a = 25˚C
25
P C ( MAX. )
Collector current I C ( mA )
Collector current I C ( mA )
20
15
10
20
15mA
15
10mA
10
5
5
0
5mA
0
0
5
10
15
20
25
Forward current I F ( mA )
125
0
30
Fig. 7 Relative Collector Current vs.
Ambient Temperature
1
2
3 4
5 6
7 8
Collector-emitter voltage V CE ( V )
9
10
Fig. 8 Collector Dark Current vs.
Ambient Temperature
I F = 10mA
VCE = 2V
10
-4
10
-5
10
-6
10
-7
10
-8
10
-9
5
100
Collector dark current I CEO ( A )
Relative collector current (%)
I F = 20mA
75
50
25
V CE= 10V
5
5
5
5
5
10
- 10
10
- 11
5
0
- 25
0
25
50
75
Ambient temperature T a ( ˚C )
100
- 25
0
25
50
75
Ambient temperature T a ( ˚C )
100
Fig. 9 Response Time vs. Load Resistance
Test Circuit for Response Time
1000
V CE= 2V
I C = 10mA
T a = 25˚C
500
Response time ( µ s )
200
V CC
tr
tf
100
Input R D
RL
Input
Output
50
Output
20
10%
td
10
90%
td
tr
ts
5
2
1
5
10
20
50
100 200
Load resistance R L ( Ω )
500
1000
ts
tf
GP2L01/GP2L01F
Fig.10 Frequency Response
Fig.11 Relative Collector Current vs.
Distance between GP2L01 ( F ) and Test Card
100
Relative collector current ( % )
0
Voltage gain AV ( dB )
I F = 10mA
V CE= 2V
V CE= 2V
I C = 10mA
T a = 25˚C
-5
RL = 1kΩ
10Ω
100Ω
- 10
- 15
- 20
102 2
T a = 25˚C
60
40
20
0
5 103 2
5 104 2
5 105 2
0
4
10
1 2 3
5 6
7 8
9
Distance between GP2L01(F) and test card d ( mm )
5
Frequency f ( Hz )
Fig.12 Relative Collector Current vs.
Card Moving Distance
Distance Characteristic Test Conditions
Correspond to Fig.11
100
Relative collector current ( % )
80
SHARP OMS TEST CARD
I F = 10mA
VCE = 2V
80
d
(White)
d= 5mm
T a = 25˚C
GP2L01
(GP2L01F)
60
Correspond to Fig.12
SHARP OMS TEST CARD
40
Black
20
0
- 10
d
-8
-6
-4
-2
0
Card moving distance L ( mm )
2
-
White
0
+
Card moving direction
(Distance = L )
4
GP2L01
(GP2L01F)
Fig.13 Collector Current vs. Illuminance ( Reference )
100
50
Collector current I C ( mA )
20
PT431
10
5
Test condition
Light source: White fluorescent lamp
Sharp FLR-40SW/M
VCE = 2V, T a = 25˚C
( Note ) Comparison between outputs of
transparent resin molded type phototransistor (PT431 ) and visible light
cut-off type (PT431F )
2
1
0.5
PT431F
0.2
0.1
100
200
1000 2000
5000
500
Illuminance under fluorescent lamp ( 1x )
●
Please refer to the chapter “ Precautions for Use” .
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