GP2L01/GP2L01F GP2L01/GP2L01F High Sensitivity, Long Focal Distance Type Photointerrupter ■ Features ■ Outline Dimensions 2 - (3.5) 19.0 12.0 2 - (2.54) (5.0) 6.0 } 2 - 19.5 ˚ 0.45 ± 0.2 4.5 17.0 ± 1.0 4 3 2 1 0.7MAX. 4- ■ Absolute Maximum Ratings Output 3 2 ❈ 1 2 3 4 Rating 50 1 6 75 35 6 40 75 - 25 to + 85 - 40 to + 100 260 Cathode Anode Emitter Collector ❈ Protrusion of resin for fixing ∗Unspecified tolerances shall be as follows; Dimensions(d) Tolerance d<= 6.0 ± 0.1 6.0<d<= 18.0 ± 0.2 18.0<d<= 24.0 ± 0.25 ∗( ) : Reference dimensions ( Ta = 25˚C ) Symbol IF I FM VR P V CEO V ECO IC PC T opr T stg T sol 1 2 - φ 3.2 ± 0.2 24.0 Input 4 4 - C2.0 2.0 1. Copiers, printers 2. Automatic vending machines, ticket vending machines 3. Optoelectronic switches, optoelectronic counters 16.0 ± 1.0 ( 2.5 ) Detector center ■ Applications Parameter Forward current ∗1 Peak forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Operating temperature Storage temperature ∗2 Soldering temperature Internal connection diagram 0.3 1. Long focal distance 2. High current transfer ratio GP2L01 CTR: MIN. 30% at I F = 10mA GP2L01F CTR: MIN. 25% 2. Visible light cut-off type: GP2L01F ( Unit : mm ) ± 0.2 Unit mA A V mW V V mA mW ˚C ˚C ˚C ∗1 Pulse width<= 100 µ s, Duty ratio= 0.01 ∗2 For 3 seconds “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” GP2L01/GP2L01F ■ Electro-optical Characteristics ( Ta = 25˚C ) Parameter Forward voltage Peak forward voltage Reverse current Collector dark current Input Output ∗3 Transfer characteristics Conditions I F = 20mA I FM = 0.5A V R = 3V VCE = 10V Ic I F = 10mA, VCE = 2V tr tf I C = 10mA, V CE = 2V, R L = 100 Ω d = 5mm I F = 10mA, VCE = 2V GP2L01 GP2L01F Rise time Fall time Collector Current Response time ∗4 Symbol VF V FM IR I CEO Leak current I LEAK MIN. 3 2.5 - TYP. 1.2 3.0 80 70 - MAX. 1.4 4.0 10 10 - 6 25 400 350 100 ∗3 Test method : A reflective object shall be an OMS test card ( white ) specified by Sharp, and be 5.0mm away from the sensor. ∗4 Wihtout reflective object Fig. 1 Forward Current vs. Ambient Temperature Fig. 2 Collector Power Dissipation vs. Ambient Temperature 80 75 Collector power dissipation P C ( mW ) 60 Forward current I F ( mA ) 50 40 30 20 10 0 - 25 0 25 50 75 Ambient temperature T a ( ˚C ) 85 60 50 40 30 20 10 0 - 25 100 Fig. 3 Peak Forward Current vs. Duty Ratio 70 0 25 50 75 Ambient temperature T a ( ˚C ) 85 100 Fig. 4 Forward Current vs. Forward Voltage 500 Pulse width <= 100 m s T a= 25˚C T a = 75˚C 50˚C 200 ( mA ) 1000 25˚C 0˚C - 25˚C 100 50 F 500 Forward current I Peak forward current I FM ( mA ) 2000 200 100 20 10 5 50 2 20 10 - 3 2 5 10 - 2 2 5 Duty ratio 10 - 1 2 5 1 1 0 0.5 1.0 1.5 2.0 Forward voltage V F ( V ) 2.5 3.0 Unit V V µA A mA mA µs µs µA GP2L01/GP2L01F Fig. 5 Collector Current vs. Forward Current Fig. 6 Collector Current vs. Collector-emitter Voltage 30 25 T a = 25˚C V CE = 2V T a = 25˚C 25 P C ( MAX. ) Collector current I C ( mA ) Collector current I C ( mA ) 20 15 10 20 15mA 15 10mA 10 5 5 0 5mA 0 0 5 10 15 20 25 Forward current I F ( mA ) 125 0 30 Fig. 7 Relative Collector Current vs. Ambient Temperature 1 2 3 4 5 6 7 8 Collector-emitter voltage V CE ( V ) 9 10 Fig. 8 Collector Dark Current vs. Ambient Temperature I F = 10mA VCE = 2V 10 -4 10 -5 10 -6 10 -7 10 -8 10 -9 5 100 Collector dark current I CEO ( A ) Relative collector current (%) I F = 20mA 75 50 25 V CE= 10V 5 5 5 5 5 10 - 10 10 - 11 5 0 - 25 0 25 50 75 Ambient temperature T a ( ˚C ) 100 - 25 0 25 50 75 Ambient temperature T a ( ˚C ) 100 Fig. 9 Response Time vs. Load Resistance Test Circuit for Response Time 1000 V CE= 2V I C = 10mA T a = 25˚C 500 Response time ( µ s ) 200 V CC tr tf 100 Input R D RL Input Output 50 Output 20 10% td 10 90% td tr ts 5 2 1 5 10 20 50 100 200 Load resistance R L ( Ω ) 500 1000 ts tf GP2L01/GP2L01F Fig.10 Frequency Response Fig.11 Relative Collector Current vs. Distance between GP2L01 ( F ) and Test Card 100 Relative collector current ( % ) 0 Voltage gain AV ( dB ) I F = 10mA V CE= 2V V CE= 2V I C = 10mA T a = 25˚C -5 RL = 1kΩ 10Ω 100Ω - 10 - 15 - 20 102 2 T a = 25˚C 60 40 20 0 5 103 2 5 104 2 5 105 2 0 4 10 1 2 3 5 6 7 8 9 Distance between GP2L01(F) and test card d ( mm ) 5 Frequency f ( Hz ) Fig.12 Relative Collector Current vs. Card Moving Distance Distance Characteristic Test Conditions Correspond to Fig.11 100 Relative collector current ( % ) 80 SHARP OMS TEST CARD I F = 10mA VCE = 2V 80 d (White) d= 5mm T a = 25˚C GP2L01 (GP2L01F) 60 Correspond to Fig.12 SHARP OMS TEST CARD 40 Black 20 0 - 10 d -8 -6 -4 -2 0 Card moving distance L ( mm ) 2 - White 0 + Card moving direction (Distance = L ) 4 GP2L01 (GP2L01F) Fig.13 Collector Current vs. Illuminance ( Reference ) 100 50 Collector current I C ( mA ) 20 PT431 10 5 Test condition Light source: White fluorescent lamp Sharp FLR-40SW/M VCE = 2V, T a = 25˚C ( Note ) Comparison between outputs of transparent resin molded type phototransistor (PT431 ) and visible light cut-off type (PT431F ) 2 1 0.5 PT431F 0.2 0.1 100 200 1000 2000 5000 500 Illuminance under fluorescent lamp ( 1x ) ● Please refer to the chapter “ Precautions for Use” .