Diode Semiconductor Korea MBRF1030CT - - - MBRF10100CT VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A SCHOTTKY BARRIER RECTIFIERS FEATURES ITO-220AB High s urge capacity. 4.5± 0.2 For us e in low voltage, high frequency inverters , free 111wheeling, and polarity protection applications . 10.2± 0.2 3.1+0.2 -0.1 1 MECHANICAL DATA 4.0± 0.3 13.5± 0.5 Cas e:JEDEC ITO-220AB,molded plastic body 2.6± 0.2 1.4± 0.1 Term inals :Solderable per MIL-STD-750, 1 1 φ 3 .2± 0.2 PIN 2 3 8.2± 0.2 Guard ring for over voltage protection. 16.5± 0.3 15.0± 0.5 High current capacity, low forward voltage drop. φ 3 .3± 0.1 Metal s ilicon junction, m ajority carrier conduction. 0.6± 0.1 Method 2026 Polarity: As m arked 0.6± 0.1 2.6± 0.15 Pos ition: Any Dimensions in millimeters Weight: 0.06ounce, 1.67 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%. MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF UNITS 1030CT 1035CT 1040CT 1045CT 1050CT 1060CT 1090CT 10100CT Maximum recurrent peak reverse voltage V RRM 30 35 40 45 50 60 90 100 V Maximum RMS V oltage V RMS 21 25 28 32 35 42 63 70 V Maximum DC blocking voltage V DC 30 35 40 45 50 60 90 100 V Maximum average forw ard total device m rectified current @TC = 105°C IF(AV) 10 A Peak forw ard surge current 8.3ms single half b sine-w ave superimposed on rated load IFSM 125 A Maximum forward (I F=5.0A,TC=125 ) voltage (I F=5.0A,TC=25 ) (Note 1) (I F=10A ,TC=25 ) Maximum reverse current at rated DC blocking voltage @TC =25 @TC =125 VF IR 0.57 0.70 - 0.70 0.80 0.85 0.84 0.95 - 0.1 15 6.0 3) 6.8 4.4 Maximum thermal resistance (Note2) R θJC Operating junction temperature range TJ - 55 ---- + 150 TSTG - 55 ---- + 150 Storage temperature range V mA /W NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle. 2. Thermal resistance from junction to case. 3.T C =100 www.diode.kr MBRF1030CT--- MBRF10100CT Diode Semiconductor Korea AVERAGE FORWARD OUTPUT CURRENT, AMPERES FIG.2 -- FORWARD DERATING CURVE 125 100 AMPERES PEAK FORWARD SURGE CURRENT, FIG.1 -- PEAK FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave TJ=125 75 50 25 0 1 10 100 10 8 6 4 2 0 25 50 NUMBER OF CYCLES AT 60HZ MBRF1030CT-MBRF1045CT MBRF1090CT-MBRF10100CT MBRF1050CT-MBRF1060CT Pulse width=300µ s 1% Duty Cycle 0.1 .3 .4 .5 .6 .7 .8 .9 1.0 1.1 125 150 1.2 1.3 INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.4 -- TYPICAL REVERSE CHARACTERISTIC INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES AMPERES INSTANTANEOUS FORWARD CURRENT, 20 1.0 100 CASE TEMPERATURE, FIG.3 -- TYPICAL FORWARD CHARACTERISTIC 10 75 10 MBRF1090CT-MBRF10100CT MBRF1030CT-MBRF1060CT 1 MBRF1030CTMBRF10100CT .1 .01 TC=125℃ TC=25℃ 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,% www.diode.kr