NCV1009 2.5 Volt Reference The NCV1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on−chip trimming which minimizes voltage tolerance and temperature drift. A third terminal allows the reference voltage to be adjusted ±5.0% to calibrate out system errors. In many applications, the NCV1009Z can be used as a pin−to−pin replacement of the LT1009CZ and the LM136Z−2.5 with the external trim network eliminated. Features • 0.2% Initial Tolerance Max. • Guaranteed Temperature Stability • Maximum 0.6 W Dynamic Impedance • Wide Operating Current Range • Directly Interchangeable with LT1009 and LM136 for Improved Performance • No Adjustments Needed for Minimum Temperature Coefficient • Meets Mil Std 883C ESD Requirements • Extended Operating Temperature Range for Use in Automotive Applications • NCV Prefix, for Automotive and Other Applications Requiring Site and Change Control • Pb−Free Packages are Available http://onsemi.com MARKING DIAGRAMS 8 SOIC−8 D SUFFIX CASE 751 8 1 1009D ALYW G 1 TO−92 Z SUFFIX CASE 29 A L Y WW, W G 1009Z ALYWWG G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTIONS NC 1 8 NC NC NC NC VREF GND ADJ. PIN 5.0 V−35 V Pin 1. ADJ. PIN 2. VREF 3. GND 3.6 kW 1 2 3 VREF ORDERING INFORMATION ADJ 10 kW∗ TRIM Device GND If the external trim resistor is not used, the “ADJ. PIN” should be left floating. The 10k trim potentiometer does not effect the temperature coefficient of the device. Figure 1. Application Diagram February, 2006 − Rev. 9 Shipping NCV1009D SOIC−8 95 Units/Rail NCV1009DR2 SOIC−8 2500 Tape & Reel SOIC−8 (Pb−Free) 2500 Tape & Reel TO−92 2000 Units/Rail TO−92 (Pb−Free) 2000 Tape & Reel NCV1009DR2G *±5.0% Trim Range © Semiconductor Components Industries, LLC, 2006 Package NCV1009Z NCV1009ZG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 Publication Order Number: NCV1009/D NCV1009 VREF P3 10 pF 15 pF N14 TRIM P2 P1 N16 14 kW 20 kW 20 pF 20 kW 10.15 kW 63 kW N7 N2 N8 N12 N13 30 kW N1 N4 N3 ADJ N10 N9 N5 N6 1.14 kW SUBSTRATE GND Figure 2. Block Diagram http://onsemi.com 2 N11 1.14 kW 6.785 kW D1 N15 NCV1009 MAXIMUM RATINGS* Rating Value Unit Reverse Current 20 mA Forward 10 mA 45 165 °C/W °C/W − 170 °C/W °C/W Operating Temperature Range −40 to +125 °C Storage Temperature Range −65 to +150 °C 260 peak 240 peak °C °C Package Thermal Resistance, SOIC−8: Junction−to−Case, RqJC Junction−to−Ambient, RqJA Package Thermal Resistance, TO−92: Junction−to−Case, RqJC Junction−to−Ambient, RqJA Lead Temperature Soldering: Wave Solder (through hole styles only) (Note 1) Reflow: (SMD styles only) (Notes 2, 3) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *The maximum package power dissipation must be observed. 1. 10 second maximum 2. 60 second maximum above 183°C. 3. −5°C / +0°C allowable conditions. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified.) Characteristic Test Conditions Min Typ Max Unit Reverse Breakdown Voltage IR = 1.0 mA 2.492 2.500 2.508 V Reverse Breakdown Voltage −40°C ≤ TA ≤ 125°C 2.480 2.500 2.508 V Reverse Breakdown Voltage Change with Current 400 mA ≤ IR ≤ 10 mA (Note 4) − − 2.6 3.0 5.0 6.0 mV mV Reverse Dynamic Impedance IR = 1.0 mA (Note 4) − − 0.2 0.4 1.0 1.4 W W Temperature Stability Average Temperature Coefficient 0°C ≤ TA ≤ 70°C, (Note 5) 0°C ≤ TA ≤ 70°C, (Note 5) − − 1.8 15 − − mV ppm/°C Long Term Stabilty TA = 25°C ±0.1 C, IR = 1.0 mA − 20 − ppm/kHr 4. Denotes the specifications which apply over full operating temperature range. 5. Average temperature coefficient is defined as the total voltage change divided by the specified temperature range. http://onsemi.com 3 NCV1009 TYPICAL PERFORMANCE CHARACTERISTICS 5 REVERSE VOLTAGE CHANGE (mV) REVERSE CURRENT (A) 10−1 10−2 10−3 10−4 TJ = 25°C 10−5 0.5 1.0 1.4 1.8 REVERSE VOLTAGE (V) 4 3 2 1 0 2.6 2.2 0 4 Figure 3. Reverse Current vs. Reverse Voltage 20 Figure 4. Change in Reverse Voltage vs. Reverse Current 1.2 100 TJ = 25°C DYNAMIC IMPEDANCE (W) FORWARD VOLTAGE (V) 8 12 16 REVERSE CURRENT (mA) 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1.0 10 1.0 0.1 10 10 100 FORWARD CURRENT (mA) Figure 5. Forward Voltage vs. Forward Current 1.0 k 10 k FREQUENCY (Hz) 100 k Figure 6. Dynamic Impedance vs. Frequency IR = ImA TJ = 25°C 0 VOLTAGE SWING (V) NOISE (nV/√HZ) FORWARD VOLTAGE (V) 250 200 150 2.5 2.0 1.5 5.0 k 1.0 0.5 0 INPUT OUTPUT 100 10.0 4.0 0 50 10 100 1.0 k FREQUENCY (Hz) 10 k 100 k Figure 7. Zener Noise Voltage vs. Frequency 0 1 TIME (ms) Figure 8. Response Time http://onsemi.com 4 20 NCV1009 PACKAGE DIMENSIONS SOIC−8 CASE 751−07 ISSUE AG NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. −X− A 8 5 0.25 (0.010) S B 1 M Y M 4 K −Y− G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− 0.10 (0.004) H D 0.25 (0.010) M Z Y S X M J S SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 NCV1009 PACKAGE DIMENSIONS TO−92 CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K D X X G J H V C SECTION X−X 1 N DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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