ON MMBF0201NLT1 Power mosfet 300 mamps, 20 volt Datasheet

MMBF0201NLT1
Preferred Device
Power MOSFET
300 mAmps, 20 Volts
N–Channel SOT–23
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in small power management circuitry. Typical applications are
dc–dc converters, power management in portable and
battery–powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature SOT–23 Surface Mount Package Saves Board Space
http://onsemi.com
300 mAMPS
20 VOLTS
RDS(on) = 1 N–Channel
3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current
– Continuous @ TA = 25°C
– Continuous @ TA = 70°C
– Pulsed Drain Current (tp ≤ 10 µs)
Total Power Dissipation @ TA = 25°C(1)
Operating and Storage Temperature
Range
Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10
seconds
Symbol
Value
Unit
VDSS
20
Vdc
VGS
± 20
Vdc
1
mAdc
ID
ID
IDM
300
240
750
PD
225
mW
TJ, Tstg
– 55 to
150
°C
RθJA
556
°C/W
TL
260
°C
2
MARKING
DIAGRAM
3
SOT–23
CASE 318
STYLE 21
1
N1
W
2
W
= Work Week
PIN ASSIGNMENT
Drain
3
1
2
Source
Gate
ORDERING INFORMATION
Device
Package
MMBF0201NLT1
SOT–23
Shipping
3000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 2
1
Publication Order Number:
MMBF0201NLT1/D
MMBF0201NLT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
20
–
–
Vdc
–
–
–
–
1.0
10
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µA)
µAdc
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
–
–
±100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
VGS(th)
1.0
1.7
2.4
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 300 mAdc)
(VGS = 4.5 Vdc, ID = 100 mAdc)
rDS(on)
–
–
0.75
1.0
1.0
1.4
gFS
–
450
–
mMhos
pF
ON CHARACTERISTICS (Note 1.)
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)
Ohms
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 V)
Ciss
–
45
–
Output Capacitance
(VDS = 5.0 V)
Coss
–
25
–
Transfer Capacitance
(VDG = 5.0 V)
Crss
–
5.0
–
td(on)
–
2.5
–
tr
–
2.5
–
td(off)
–
15
–
tf
–
0.8
–
QT
–
1400
–
pC
IS
–
–
0.3
A
Pulsed Current
ISM
–
–
0.75
Forward Voltage (Note 2.)
VSD
–
0.85
–
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
(VDD = 15 Vdc, ID = 300 mAdc,
RL = 50 Ω)
Fall Time
Gate Charge (See Figure 5)
ns
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
http://onsemi.com
2
V
MMBF0201NLT1
TYPICAL ELECTRICAL CHARACTERISTICS
1.0
I D , DRAIN CURRENT (AMPS)
0.8
0.6
0.4
125°C
0.2
0
-55°C
25°C
0
1
2
3
4
5
ON-RESISTANCE (OHMS)
VGS = 4 V
0.6
VGS = 10, 9, 8, 7, 6 V
0.4
0.2
VGS = 3 V
0
0.3
1.2
Figure 2. On–Region Characteristics
VGS = 4.5 V
0.6
VGS = 10 V
0.3
0.2
0.4
0.6
ID, DRAIN CURRENT (AMPS)
1
0.8
2.0
1.5
1.0
0.5
0
0
5
10
15
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1.10
14
1.05
ID = 250 µA
VGS(th) , NORMALIZED
1.00
VDS = 16 V
ID = 300 mA
10
20
Figure 4. On–Resistance versus
Gate–to–Source Voltage
16
12
1.4
2.4
Figure 3. On–Resistance versus Drain Current
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
0.9
Figure 1. Transfer Characteristics
0.9
8
6
4
0.95
0.90
0.85
0.80
0.75
0.70
2
0
0
0.6
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
1.2
0
0.8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1.5
0
VGS = 5 V
0
6
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
I D , DRAIN CURRENT (AMPS)
1.0
0.65
160
450
2000
0.60
-25
3400
0
25
50
75
100
125
Qg, TOTAL GATE CHARGE (pC)
TEMPERATURE (°C)
Figure 5. Gate Charge
Figure 6. Threshold Voltage Variance
Over Temperature
http://onsemi.com
3
150
MMBF0201NLT1
TYPICAL ELECTRICAL CHARACTERISTICS
100
1.6
VGS = 10 V @ 300 mA
C, CAPACITANCE (pF)
80
1.4
1.2
VGS = 4.5 V @ 100 mA
1.0
0.6
-50
60
Ciss
40
Coss
20
0.8
-25
0
25
50
75
100
125
0
150
Crss
0
5
10
15
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. On–Resistance versus
Junction Temperature
Figure 8. Capacitance
10
SOURCE CURRENT (AMPS)
RDS(on) , NORMALIZED (OHMS)
1.8
1.0
0.1
125°C
0.01
0.001
0
25°C
-55°C
0.3
0.6
0.9
1.2
SOURCE-TO-DRAIN FORWARD VOLTAGE (VOLTS)
Figure 9. Source–to–Drain Forward Voltage
versus Continuous Current (IS)
http://onsemi.com
4
1.4
20
MMBF0201NLT1
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23 POWER DISSIPATION
one can calculate the power dissipation of the device which
in this case is 225 milliwatts.
The power dissipation of the SOT–23 is a function of the
drain pad size. This can vary from the minimum pad size
for soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RθJA, the thermal resistance from
the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data
sheet for the SOT–23 package, PD can be calculated as
follows:
PD =
PD =
150°C – 25°C
556°C/W
= 225 milliwatts
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 225
milliwatts. There are other alternatives to achieving higher
power dissipation from the SOT–23 package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
SOLDERING PRECAUTIONS
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10°C.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
http://onsemi.com
5
MMBF0201NLT1
PACKAGE DIMENSIONS
SOT–23 (TO–236)
CASE 318–08
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
A
L
3
1
V
B S
2
G
C
D
H
J
K
DIM
A
B
C
D
G
H
J
K
L
S
V
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
http://onsemi.com
6
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
MMBF0201NLT1
Notes
http://onsemi.com
7
MMBF0201NLT1
Thermal Clad is a registered trademark of the Bergquist Company.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
NORTH AMERICA Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: [email protected]
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
EUROPE: LDC for ON Semiconductor – European Support
German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)
Email: ONlit–[email protected]
French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)
Email: ONlit–[email protected]
English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)
Email: [email protected]
CENTRAL/SOUTH AMERICA:
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)
Email: ONlit–[email protected]
Toll–Free from Mexico: Dial 01–800–288–2872 for Access –
then Dial 866–297–9322
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support
Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
Toll Free from Hong Kong & Singapore:
001–800–4422–3781
Email: ONlit–[email protected]
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: [email protected]
ON Semiconductor Website: http://onsemi.com
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781
*Available from Germany, France, Italy, UK, Ireland
For additional information, please contact your local
Sales Representative.
http://onsemi.com
8
MMBF0201NLT1/D
Similar pages