Advance Technical Information GenX3TM 300V IGBT VCES IC110 VCE(sat) tfi typ IXGH60N30C3 High Speed IGBTs for 50-150kHz switching Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (Limited by leads) 75 A IC110 TC = 110°C (chip capability) 60 A ICM TC = 25°C, 1ms 420 A IA TC = 25°C 60 A EAS TC = 25°C 400 mJ SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped inductive load @ ≤ 300V ICM = 170 A PC TC = 25°C G W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 g Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10s Md Mounting torque (TO-247) z z z z z z z Symbol Test Conditions BVCES VGE(th) IC IC ICES VCE = VCES VGE = 0V Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. = 250µA, VGE = 0V = 250µA, VCE = VGE IGES VCE = 0V, VGE = ± 20V VCE(sat) IC 300 2.5 TJ = 125°C = 60A, VGE = 15V TJ = 125°C © 2007 IXYS CORPORATION, All rights reserved 1.55 1.60 5.0 V V 30 750 µA µA ±100 nA 1.8 V V (TAB) C = Collector TAB = Collector High Frequency IGBT Square RBSOA High avalanche capability Drive simplicity with MOS Gate Turn-On High current handling capability Applications z Weight E Features z 300 C G = Gate E = Emitter z TL TSOLD 300V 60A 1.8V 70ns TO-247 AD (IXGH) Symbol TJ = = ≤ = z z PFC Circuits PDP Systems Switched-mode and resonant-mode converters and inverters SMPS AC motor speed control DC servo and robot drives DC choppers DS99914A (01/08) IXGH60N30C3 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) = 0.5 • IC110, VCE = 10V Characteristic Values Typ. Max. 46 S 3800 pF 240 pF 63 pF 101 nC 21 nC Qgc 37 nC td(on) 23 ns 28 ns gfs IC Min. 28 TO-247 AD Outline Pulse test, t ≤ 300µs; duty cycle, d ≤ 2%. Cies Coes VCE = 25V, VGE = 0V, f = 1MHz Cres Qg Qge IC = IC110, VGE = 15V, VCE = 0.5 • VCES Inductive Load, TJ = 25°°C tri Eon IC = 0.5 • IC110, VGE = 15V 0.15 td(off) VCE = 200V, RG = 5Ω 108 tfi mJ 160 ns 68 Eoff 0.30 Eon td(off) tfi 0.55 mJ 22 td(on) tri ns Inductive Load, TJ = 125°°C IC = 0.5 • IC110, VGE = 15V VCE = 200V, RG = 5Ω Eoff ns 28 ns 0.26 mJ 120 ns 101 ns 0.40 mJ ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 0.42 °C/W RthJC RthCK 0.21 °C/W ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2