Preliminary Datasheet CR8LM-12B R07DS0211EJ0100 Rev.1.00 Dec 03, 2010 Thyristor Medium Power Use Features Insulated Type Planar Passivation Type UL Recognized : Yellow Card No. E223904 IT (AV) : 8 A VDRM : 600 V IGT : 15 mA Viso : 1800 V Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) 2 1. Cathode 2. Anode 3. Gate 3 1 1 2 3 Applications Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control applications Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage R07DS0211EJ0100 Rev.1.00 Dec 03, 2010 Symbol VRRM VRSM VR(DC) VDRM VD(DC) Voltage class 12 600 720 480 600 480 Unit V V V V V Page 1 of 7 CR8LM-12B Preliminary Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Isolation voltage Symbol IT (RMS) IT (AV) Ratings 12.6 8 Unit A A ITSM 120 A I2t 60 A2s PGM PG (AV) VFGM VRGM IFGM Tj Tstg — Viso 5 0.5 6 10 2 – 40 to +150 – 40 to +150 1.5 1800 W W V V A °C °C g V Conditions Commercial frequency, sine half wave 180° conduction, Tc = 106°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, each terminal to case Electrical Characteristics Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Symbol IRRM IDRM VTM VGT VGD IGT IH Rth (j-c) Rated value Min. Typ. Max. — — 2.0/5.0 — — 2.0/5.0 — — 1.4 — 0.2/0.1 — — — — — — 15 — 1.0 — 15 — 3.7 Unit Test conditions mA mA V Tj = 125°C/150°C, VRRM applied Tj = 125°C/150°C, VDRM applied V V mA mA °C/W Tc = 25°C, ITM = 25 A, instantaneous value Tj = 25°C, VD = 6 V, IT = 1 A Tj = 125°C/150°C, VD = 1/2 VDRM Tj = 25°C, VD = 6 V, IT = 1 A Tj = 25°C, VD = 12 V Junction to caseNote1 Notes: 1. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. R07DS0211EJ0100 Rev.1.00 Dec 03, 2010 Page 2 of 7 CR8LM-12B Preliminary Performance Curves Rated Surge On-State Current Maximum On-State Characteristics 103 200 Surge On-State Current (A) 102 101 1 2 3 4 × 100 (%) Gate Trigger Current (Tj = t°C) Gate Voltage (V) × 100 (%) Gate Trigger Voltage (Tj = t°C) Gate Trigger Voltage (Tj = 25°C) PGM = 5W PG(AV) = 0.5W IGT = 15mA VGD = 0.2V 101 IFGM = 2A 102 103 103 Typical Example 102 101 100 –40 0 40 80 160 120 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) Typical Example 102 –40 102 101 Gate Trigger Current vs. Junction Temperature 103 101 40 Gate Characteristics VGT = 1V 10-1 80 Conduction Time (Cycles at 50Hz) VFGM = 6V 100 120 On-State Voltage (V) 102 101 160 0 100 5 Gate Trigger Current (Tj = 25°C) 100 0 0 40 80 120 Junction Temperature (°C) R07DS0211EJ0100 Rev.1.00 Dec 03, 2010 160 Transient Thermal Impedance (°C/W) On-State Current (A) Tc = 125°C 102 101 100 10–1 –3 10 10–2 10–1 100 101 Time (s) Page 3 of 7 CR8LM-12B Preliminary Allowable Case Temperature vs. Average On-State Current (Single-Phase Half Wave) Maximum Average Power Dissipation (Single-Phase Half Wave) 160 16 Case Temperature (°C) Average Power Dissipation (W) 20 180° 12 120° 90° θ = 30° 60° 8 θ 4 0 360° 2 4 6 8 10 12 14 Resistive, inductive loads 100 80 180° 60 120° 90° 40 60° θ = 30° 2 4 6 8 10 14 12 16 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Single-Phase Full Wave) Allowable Case Temperature vs. Average On-State Current (Single-Phase Full Wave) 160 16 180° θ = 30° 12 120° 90° 60° 8 θ 4 θ 360° Case Temperature (°C) Average Power Dissipation (W) 360° 0 0 16 20 Resistive loads 140 0 2 4 6 8 10 12 80 180° 60 120° 90° 40 0 0 16 θ 100 60° 20 14 θ 360° 120 θ = 30° Resistive loads 0 2 4 6 8 10 12 14 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Rectangular Wave) Allowable Case Temperature vs. Average On-State Current (Rectangular Wave) 20 16 90° 120° 12 DC 270° θ = 30° 8 θ 4 360° 2 4 6 8 10 12 14 Average On-State Current (A) R07DS0211EJ0100 Rev.1.00 Dec 03, 2010 16 θ 360° 120 100 80 60 40 20 Resistive, inductive loads 0 Resistive, inductive loads 140 60° 0 16 160 180° Case Temperature (°C) Average Power Dissipation (W) θ 120 20 Resistive, inductive loads 0 140 0 0 180° 270° 60° DC θ = 30° 90° 120° 2 4 6 8 10 12 14 16 Average On-State Current (A) Page 4 of 7 Breakover Voltage vs. Junction Temperature 160 Typical Example 140 120 100 80 60 40 20 0 –40 0 40 80 120 160 Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 Tj = 125°C Typical Example 140 120 100 80 60 40 20 0 101 102 103 104 Repetitive Peak Reverse Voltage vs. Junction Temperature 160 Typical Example 140 120 100 80 60 40 20 0 –40 0 40 80 120 160 Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 Tj = 150°C Typical Example 140 120 100 80 60 40 20 0 1 10 102 103 104 Rate of Rise of Off-State Voltage (V/μs) Rate of Rise of Off-State Voltage (V/μs) Holding Current vs. Junction Temperature Turn-Off Time vs. Junction Temperature 103 100 Typical Example Turn-Off Time (μs) Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Breakover Voltage (dv/dt = vV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) Junction Temperature (°C) Repetitive Peak Reverse Voltage (Tj = t°C) × 100 (%) Repetitive Peak Reverse Voltage (Tj = 25°C) Preliminary Breakover Voltage (dv/dt = vV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) CR8LM-12B 102 IT = 8A, –di/dt = 5A/µs, VD = 300V, dv/dt = 20V/µs VR = 50V 80 60 40 Typical Example 20 Distribution 101 –40 0 40 80 120 Junction Temperature (°C) R07DS0211EJ0100 Rev.1.00 Dec 03, 2010 160 0 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Page 5 of 7 CR8LM-12B Preliminary Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Gate Trigger Current vs. Gate Current Pulse Width 103 Typical Example 102 101 -1 10 100 101 102 Gate Current Pulse Width (μs) R07DS0211EJ0100 Rev.1.00 Dec 03, 2010 Page 6 of 7 CR8LM-12B Preliminary Package Dimensions Package Name TO-220FL JEITA Package Code ⎯ Previous Code TO-220FL RENESAS Code PRSS0003AF-A Unit: mm 6.5 ± 0.3 3.0 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 12.5 ± 0.5 15.0 ± 0.3 10.0 ± 0.3 MASS[Typ.] 1.5g 1.15 ± 0.2 1.15 ± 0.2 0.75 ± 0.15 0.40 ± 0.15 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 2.54 ± 0.25 Ordering Information Orderable Part Number CR8LM-12B#B00 CR8LM-12B-A8#B00 Packing Tube Tube Quantity 50 pcs. 50 pcs. 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