ETL GMBT195 P n p s i l i co n p l a n a r m e d i um powe r t r a n s i s t o r Datasheet

CORPORATION
G M BT 1 9 5
Description
ISSUED DATE :2006/06/08
REVISED DATE :
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
The GMBT195 is designed for medium power amplifier applications.
Features
-60 Volt VCEO
-1 Amp continuous current
Complementary to GMBT194
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
0.85
1.15
0°
10°
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Ratings
Unit
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Total Power Dissipation(Note1)
Tj
Tstg
VCBO
VCEO
VEBO
IC
IC
PD
+150
-55~+150
-80
-60
-5
-1
-2
500
V
V
V
A
A
mW
Note 1.Device mounted on FR-4=1.6*1.6*0.06in
Electrical Characteristics (Ta = 25
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
ICES
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
*hFE4
fT
Cob
Min.
-80
-60
-5
100
100
80
15
150
-
Typ.
-
, unless otherwise stated)
Max.
Unit
Test Conditions
V
IC=-100uA , IE=0
V
IC=-10mA, IB=0
V
IE=-100uA ,IC=0
-100
nA
VCB=-60V, IE=0
-100
nA
VCES=-60V
-100
nA
VEB=-4V, IC=0
-0.3
V
IC=-500mA, IB=-50mA
-0.6
V
IC=-1A, IB=-100mA
-1.2
V
IC=-1A, IB=-100mA
-1.0
V
VCE=-5V, IC=-1A
VCE=-5V, IC=-1mA
300
VCE=-5V, IC=-500mA
VCE=-5V, IC=-1A
VCE=-5V, IC=-2A
MHz
VCE=-10V, IC=-50mA, f=100MHz
10
pF
VCB=-10V, IE=0, f=1MHz
*Measured under pulse condition. Pulse width=300 s, Duty Cycle 2%
GMBT195
Page: 1/2
CORPORATION
ISSUED DATE :2006/06/08
REVISED DATE :
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GMBT195
Page: 2/2
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