DMG4800LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • • • Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Below Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.072 grams (approximate) D1 TOP VIEW Maximum Ratings S1 D1 G1 D1 S2 D2 G2 D2 TOP VIEW Internal Schematic D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) Steady State TA = 25°C TA = 70°C Pulsed Drain Current (Note 4) Unit V V IDM Value 30 ±25 8.54 6.83 42 Symbol PD RθJA TJ, TSTG Value 1.17 107 -55 to +150 Unit W °C/W °C ID A A Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25°C Operating and Storage Temperature Range Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, with minimum recommended pad layout. 4. Repetitive rating, pulse width limited by junction temperature. DMG4800LSD Document number: DS31858 Rev. 3 - 2 1 of 6 www.diodes.com October 2009 © Diodes Incorporated DMG4800LSD @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 1.0 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 0.8 - 1.6 V RDS (ON) - 12 16 16 22 mΩ |Yfs| VSD - 8 0.72 0.94 S V VDS = VGS, ID = 250μA VGS = 10V, ID = 9A VGS = 4.5V, ID = 7A VDS = 10V, ID = 9A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qgs Qgd - 798 128 122 1.37 8.56 1.8 2.5 5.03 4.50 26.33 8.55 - pF pF pF Ω nC nC nC ns ns ns ns Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: tD(on) tr tD(off) tf Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 5V, VDS = 15V, ID = 9A VDD = 15V, VGEN = 10V, RL = 15Ω, RG = 6Ω, ID = 1A 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing. 30 30 VGS = 10V 25 25 20 ID, DRAIN CURRENT (A) VGS = 4.5V ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics VGS = 3.0V 15 10 VGS = 2.5V VDS = 5V 20 15 10 TA = 150°C 5 5 TA = 125°C TA = 85°C T A = 25°C VGS = 2.0V 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMG4800LSD Document number: DS31858 Rev. 3 - 2 TA = -55°C 0 2 2 of 6 www.diodes.com 0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 4 October 2009 © Diodes Incorporated 0.1 VGS = 2.5V VGS = 4.5V 0.01 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.03 TA = 150°C TA = 125°C 0.02 T A = 85°C T A = 25°C 0.01 T A = -55°C 0 0 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.2 VGS = 4.5V ID = 10A VGS = 10V ID = 11.6A 0.6 -50 0.04 5 10 15 20 ID, DRAIN CURRENT (A) 25 30 Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.4 0.8 VGS = 4.5V 0.05 30 1.6 1.0 0.06 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1 0 0.05 0.04 0.03 VGS = 4.5V ID = 10A 0.02 0.01 VGS = 10V ID = 11.6A 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 2.0 20 TA = 25°C 1.6 1.2 0.8 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMG4800LSD ID = 1mA ID = 250µA 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature Document number: DS31858 Rev. 3 - 2 12 8 4 0.4 DMG4800LSD 16 3 of 6 www.diodes.com 0 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 October 2009 © Diodes Incorporated DMG4800LSD VGS, GATE-SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 10 1,000 Ciss Coss 100 Crss 10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 8 4 2 0 30 ID = 9A 6 0 2 4 6 8 10 12 14 16 18 QG, TOTAL GATE CHARGE (nC) Fig. 10 Total Gate Charge 100,000 IDSS, LEAKAGE CURRENT (nA) 10,000 TA = 150°C 1,000 TA = 125°C 100 TA = 85°C 10 TA = -55°C T A = 25°C 1 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) 30 Fig. 11 Typical Leakage Current vs. Drain-Source Voltage 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 10,000 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA R θJA = 106°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 DMG4800LSD Document number: DS31858 Rev. 3 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 4 of 6 www.diodes.com 10 100 1,000 October 2009 © Diodes Incorporated DMG4800LSD Ordering Information (Note 7) Part Number DMG4800LSD-13 Packaging 2500 / Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information ( Top View ) 8 5 Logo G4800LD Part no. YY WW 1 Xth week: 01~52 Year : "08" =2008 "09" =2009 4 Package Outline Dimensions 0.254 NEW PRODUCT Notes: Case SO-8 E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm Suggested Pad Layout X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMG4800LSD Document number: DS31858 Rev. 3 - 2 5 of 6 www.diodes.com October 2009 © Diodes Incorporated DMG4800LSD NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated www.diodes.com DMG4800LSD Document number: DS31858 Rev. 3 - 2 6 of 6 www.diodes.com October 2009 © Diodes Incorporated