Diodes DMG4800LSD Dual n-channel enhancement mode mosfet Datasheet

DMG4800LSD
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
NEW PRODUCT
Please click here to visit our online spice models database.
Features
Mechanical Data
•
•
•
•
•
•
•
•
•
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
•
•
•
•
•
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram Below
Marking Information: See Page 5
Ordering Information: See Page 5
Weight: 0.072 grams (approximate)
D1
TOP VIEW
Maximum Ratings
S1
D1
G1
D1
S2
D2
G2
D2
TOP VIEW
Internal Schematic
D2
G1
G2
S1
S2
N-Channel MOSFET
N-Channel MOSFET
@TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Steady
State
TA = 25°C
TA = 70°C
Pulsed Drain Current (Note 4)
Unit
V
V
IDM
Value
30
±25
8.54
6.83
42
Symbol
PD
RθJA
TJ, TSTG
Value
1.17
107
-55 to +150
Unit
W
°C/W
°C
ID
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @TA = 25°C
Operating and Storage Temperature Range
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
DMG4800LSD
Document number: DS31858 Rev. 3 - 2
1 of 6
www.diodes.com
October 2009
© Diodes Incorporated
DMG4800LSD
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
30
-
-
1.0
±100
V
μA
nA
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
0.8
-
1.6
V
RDS (ON)
-
12
16
16
22
mΩ
|Yfs|
VSD
-
8
0.72
0.94
S
V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 9A
VGS = 4.5V, ID = 7A
VDS = 10V, ID = 9A
VGS = 0V, IS = 1A
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
-
798
128
122
1.37
8.56
1.8
2.5
5.03
4.50
26.33
8.55
-
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
tD(on)
tr
tD(off)
tf
Test Condition
VDS = 10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = 5V, VDS = 15V,
ID = 9A
VDD = 15V, VGEN = 10V,
RL = 15Ω, RG = 6Ω, ID = 1A
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.
30
30
VGS = 10V
25
25
20
ID, DRAIN CURRENT (A)
VGS = 4.5V
ID, DRAIN CURRENT (A)
NEW PRODUCT
Electrical Characteristics
VGS = 3.0V
15
10
VGS = 2.5V
VDS = 5V
20
15
10
TA = 150°C
5
5
TA = 125°C
TA = 85°C
T A = 25°C
VGS = 2.0V
0
0
0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
DMG4800LSD
Document number: DS31858 Rev. 3 - 2
TA = -55°C
0
2
2 of 6
www.diodes.com
0
0.5
1
1.5
2
2.5
3
3.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
4
October 2009
© Diodes Incorporated
0.1
VGS = 2.5V
VGS = 4.5V
0.01
5
10
15
20
25
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
0.03
TA = 150°C
TA = 125°C
0.02
T A = 85°C
T A = 25°C
0.01
T A = -55°C
0
0
RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω)
RDSON , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.2
VGS = 4.5V
ID = 10A
VGS = 10V
ID = 11.6A
0.6
-50
0.04
5
10
15
20
ID, DRAIN CURRENT (A)
25
30
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
1.4
0.8
VGS = 4.5V
0.05
30
1.6
1.0
0.06
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
1
0
0.05
0.04
0.03
VGS = 4.5V
ID = 10A
0.02
0.01
VGS = 10V
ID = 11.6A
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
2.0
20
TA = 25°C
1.6
1.2
0.8
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
NEW PRODUCT
DMG4800LSD
ID = 1mA
ID = 250µA
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
Document number: DS31858 Rev. 3 - 2
12
8
4
0.4
DMG4800LSD
16
3 of 6
www.diodes.com
0
0
0.2
0.4
0.6
0.8
1
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
October 2009
© Diodes Incorporated
DMG4800LSD
VGS, GATE-SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
10
1,000
Ciss
Coss
100
Crss
10
0
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
8
4
2
0
30
ID = 9A
6
0
2
4
6
8
10
12
14
16
18
QG, TOTAL GATE CHARGE (nC)
Fig. 10 Total Gate Charge
100,000
IDSS, LEAKAGE CURRENT (nA)
10,000
TA = 150°C
1,000
TA = 125°C
100
TA = 85°C
10
TA = -55°C
T A = 25°C
1
0
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
30
Fig. 11 Typical Leakage Current vs. Drain-Source Voltage
1
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
10,000
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RθJA(t) = r(t) * RθJA
R θJA = 106°C/W
D = 0.02
0.01
P(pk)
D = 0.01
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t 1/t2
D = 0.005
D = Single Pulse
0.001
0.00001
0.0001
DMG4800LSD
Document number: DS31858 Rev. 3 - 2
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 12 Transient Thermal Response
4 of 6
www.diodes.com
10
100
1,000
October 2009
© Diodes Incorporated
DMG4800LSD
Ordering Information
(Note 7)
Part Number
DMG4800LSD-13
Packaging
2500 / Tape & Reel
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
( Top View )
8
5
Logo
G4800LD
Part no.
YY WW
1
Xth week: 01~52
Year : "08" =2008
"09" =2009
4
Package Outline Dimensions
0.254
NEW PRODUCT
Notes:
Case
SO-8
E1 E
A1
L
Gauge Plane
Seating Plane
Detail ‘A’
7°~9°
h
45°
Detail ‘A’
A2 A A3
b
e
D
SO-8
Dim
Min
Max
A
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
0.35
L
0.62
0.82
0°
8°
θ
All Dimensions in mm
Suggested Pad Layout
X
C1
C2
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
Y
DMG4800LSD
Document number: DS31858 Rev. 3 - 2
5 of 6
www.diodes.com
October 2009
© Diodes Incorporated
DMG4800LSD
NEW PRODUCT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
DMG4800LSD
Document number: DS31858 Rev. 3 - 2
6 of 6
www.diodes.com
October 2009
© Diodes Incorporated
Similar pages