WILLAS DTA124ECA Pnp digital transistor Datasheet

WILLAS
FM120-M+
DTA124ECA THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Features
• Low profile surface mounted application in order to
•
•
•
optimize
boardis
space.
Pb-Free
package
available
• Low power loss, high efficiency.
RoHS product for packing code suffix ”G”
• High current capability, low forward voltage drop.
Halogen
free
product
for packing code suffix “H”
surge
capability.
• High
0.146(3.7)
0.130(3.3)
SOT-23
Guardring
protection.
Epoxy• meets
UL for
94overvoltage
V-0 flammability
rating
high-speed
switching.
• Ultra
Moisure
Sensitivity
Level
1
Silicon
epitaxialenable
planar chip,
metal silicon junction.
Built-in• bias
resistors
the configuration
of an inverter circuit
parts
meet environmental
standards of
without• Lead-free
connecting
external
input resistors
/228of thin-film resistors with complete
• The biasMIL-STD-19500
resistors consist
product for packing code suffix "G"
• RoHS
isolation
to allow
negative biasing of the input. They also have the
Halogen
free product
for packing
code suffixparasitic
"H"
advantage
of almost
completely
eliminating
effects.
Mechanical
data
• Only the on/off conditions need to be set for operation, making
device•design
Epoxy : easy
UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
Absolute•maximum
ratings
@ 25к
Terminals :Plated
terminals,
solderable per MIL-STD-750
0.012(0.3) Typ.
.122(3.10)
.106(2.70)
.063(1.60)
.047(1.20)
•
SOD-123H
DTA124ECA
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
.080(2.04)
.070(1.78)
0.031(0.8) Typ.
.006(0.15)MIN.
0.031(0.8) Typ.
.110(2.80)
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Symbol
Parameter
Min
Typ
Marking Code
-0.5
--VI(off)
Input voltage (VCC=-5V, IO=-100­A)
Recurrent Peak
---VRRM --VMaximum
(VOReverse
=-0.2V, Voltage
IO=-5mA)
I(on)
VMaximum
Output
voltage
=
(IO/II -10mA/-0.5mA
---VRMS --RMS Voltage
O(on)
II
=
Input
current Voltage
(VI -5V)
----Maximum
DC Blocking
VDC
IO(off)
Output current (VCC=
=-50V, VI 0)
----Maximum
Average
Forward
GI
DC
current
gain (VRectified
=
IOCurrent
-5mA)
56 IO --O=-5V,
R1
Input resistance
15.4
22
Peak Forward Surge Current 8.3 ms single half sine-wave
R2/R1
Resistance ratio
0.8IFSM 1.0
superimposed
on ratedfrequency
load (JEDEC method)
Transition
fT
--250
(VO =-10V,
IO=5mA,
f=100MHz)
Typical Thermal
Resistance
(Note
2)
RΘJA
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
.008(0.20)
FM1100-MH FM1150-MH FM1200-M
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
.003(0.08)
Max
12
--20 -3.0
Unit
13
V
30 V
14 -0.3 21 V
20-0.36 30mA
­A
-0.5
--28.6
K¡
1.2
---
MHz
-55 to +125
14
40
28
40
15
50
16
60
18
80
35
42
.004(0.10)MAX.
50
60
120
200
56
70
105
140
80
100
150
200
.020(0.50)
30 .012(0.30)
40
Dimensions in inches and (millimeters)
120
-55 to +150
- 65 to +175
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
0.50
0.70
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
115
150
1.0
TSTG
CHARACTERISTICS
10
100
.055(1.40)
.035(0.89)
Electrical Characteristics
@ 25к
RATINGS
.083(2.10)
Symbol
Parameter
Min
Typ
Max
Unit
Method
2026
VCC
Supply voltage
---50
--V
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
VIN
Input voltage
-40
--10
V
Mounting Position : Any
• Output
-30
IO
current
----mA
IC(MAX)
-100
•
Weight : Approximated 0.011 gram
Pd
Power dissipation
--200
--mW
Tj
Junction temperature
--150
--ć
ELECTRICAL
Tstg
StorageMAXIMUM
temperature RATINGS AND -55
--150CHARACTERISTICS
ć
Ratings at 25℃ ambient temperature unless otherwise specified.
*Marking: 15IR
Suggested Solder
0.85
Pad Layout
0.5
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.92
.031
10
.800
@T A=125℃
NOTES:
0.9
.035
.900
.079
2.000
2- Thermal Resistance From Junction to Ambient
inches
mm
.037
.950
.037
.950
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTA124ECATHRU
PNP Digital Transistor
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
IO
1.0
IFSM
30
RΘJA
40
120
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
CHARACTERISTICS
-55 to +150
- 65 to +175
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
-55 to +125
TSTG
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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