Diodes GBJ1008 10a glass passivated bridge rectifier Datasheet

GBJ10005 - GBJ1010
10A GLASS PASSIVATED BRIDGE RECTIFIER
Features
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Glass Passivated Die Construction
High Case Dielectric Strength of 1500VRMS
Low Reverse Leakage Current
Surge Overload Rating to 170A Peak
Ideal for Printed Circuit Board Applications
Plastic Material - UL Flammability
Classification 94V-0
UL Listed Under Recognized Component
Index, File Number E94661
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GBJ
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Mechanical Data
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J
Case: Molded Plastic
Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
Polarity: Molded on Body
Mounting: Through Hole for #6 Screw
Mounting Torque: 5.0 in-lbs Maximum
Weight: 6.6 grams (approx.)
Marking: Type Number
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A
K
B
30.30
B
19.70
20.30
L
C
17.00
18.00
M
D
3.80
4.20
P
E
7.30
7.70
G
9.80
10.20
H
2.00
2.40
I
0.90
1.10
J
2.30
2.70
3.0 X 45°
K
R
I
E
Max
29.70
N
C
G
Min
A
S
D
H
Dim
E
L
4.40
4.80
M
3.40
3.80
N
3.10
3.40
P
2.50
2.90
R
0.60
0.80
S
10.80
11.20
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Rectified Output Current
@ TC= 110°C
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
(JEDEC method)
Forward Voltage per element
Peak Reverse Current
at Rated DC Blocking Voltage
I 2t
@ IF = 5.0A
@TC = 25°C
@ TC = 125°C
Rating for Fusing (t < 8.3ms) (Note 1)
Typical Junction Capacitance per Element (Note 2)
Typical Thermal Resistance, Junction to Case (Note 3)
Operating and Storage Temperature Range
Notes:
Symbol
GBJ
10005
GBJ
1001
GBJ
1002
GBJ
1004
GBJ
1006
GBJ
1008
GBJ
1010
Unit
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
VR(RMS)
35
70
140
280
420
560
700
V
IO
10
A
IFSM
170
A
VFM
1.05
V
IR
10
500
mA
I 2t
120
A 2s
Cj
55
pF
RqJC
1.4
°C/W
Tj, TSTG
-65 to +150
°C
1. Non-repetitive, for t > 1.0ms and < 8.3ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 150 x 150 x 1.6mm copper plate heat sink.
DS21218 Rev. D-2
1 of 2
GBJ10005-GBJ1010
10
IF, INSTANTANEOUS FORWARD CURRENT (A)
IO, AVERAGE RECTIFIED CURRENT (A)
12
with heatsink
8
6
4
without heatsink
2
Resistive or
Inductive load
0
25
50
75
100
125
150
10
0.1
Pulse width = 300µs
0.01
0
Cj, JUNCTION CAPACITANCE (pF)
IFSM, PEAK FWD SURGE CURRENT (A)
TJ = 150°C
120
80
40
0
1
1.6
1.8
Tj = 25°C
f = 1MHz
1
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
IR, INSTANTANEOUS REVERSE CURRENT (µA)
1.2
10
100
10
0.8
100
Single half-sine-wave
(JEDEC method)
160
0.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics (per element)
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
180
TJ = 25°C
1.0
1000
TJ = 150°C
TJ = 125°C
100
TJ = 100°C
10
1.0
TJ = 25°C
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
DS21218 Rev. D-2
2 of 2
GBJ10005-GBJ1010
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